標(biāo)題: Titlebook: Low Dielectric Constant Materials for IC Applications; Paul S. Ho,Jihperng Jim Leu,Wei William Lee Book 2003 Springer-Verlag Berlin Heidel [打印本頁] 作者: Fillmore 時(shí)間: 2025-3-21 19:45
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書目名稱Low Dielectric Constant Materials for IC Applications影響因子(影響力)學(xué)科排名
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書目名稱Low Dielectric Constant Materials for IC Applications被引頻次學(xué)科排名
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書目名稱Low Dielectric Constant Materials for IC Applications年度引用學(xué)科排名
書目名稱Low Dielectric Constant Materials for IC Applications讀者反饋
書目名稱Low Dielectric Constant Materials for IC Applications讀者反饋學(xué)科排名
作者: expire 時(shí)間: 2025-3-21 22:54 作者: 損壞 時(shí)間: 2025-3-22 03:49
Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-, Materials,as the resistance of the wiring metals. For this reason, a great deal of effort has been spent in developing low dielectric constant (low-κ) materials that can reduce the parasitic capacitance of interconnects in ULSI circuits [.].作者: 草率女 時(shí)間: 2025-3-22 05:29
Integration of SiLK Semiconductor Dielectric,ning, and clean and metallization) required to produce an interconnect structure are discussed in detail. Special attention is given to the lithographic bene- fits that can be obtained when using SiLK semiconductor dielectric in the different schemes. Finally, a brief cost-of-ownership discussion is provided.作者: commute 時(shí)間: 2025-3-22 10:05
Book 2003tant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about m作者: Badger 時(shí)間: 2025-3-22 16:02
1437-0387 terial: Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging 作者: GNAT 時(shí)間: 2025-3-22 18:15 作者: 特別容易碎 時(shí)間: 2025-3-22 22:56
Overview on Low Dielectric Constant Materials for IC Applications,actors for ultra-large-scale integration of integrated circuits. Materials with low dielectric constant are being developed to replace silicon dioxide as interlevel dielectrics. This chapter provides an overview on the basic issues of low-k dielectrics for interconnect applications and serves as a f作者: BYRE 時(shí)間: 2025-3-23 03:37 作者: 省略 時(shí)間: 2025-3-23 09:16
Structure and Property Characterization of Low-, Dielectric Porous Thin Films Determined by X-Ray Rn scattering has been developed. The average pore size, pore connectivity, film thickness, wall or matrix density, coefficient of thermal expansion, and moisture uptake of nanoporous thin films with nonhomogeneous solid matrices can be measured. The measurements can be performed directly on films up作者: 共棲 時(shí)間: 2025-3-23 13:05 作者: 樹膠 時(shí)間: 2025-3-23 17:13
Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-, Materials,king design rule of ULSI circuits has recently increased the interconnection delay caused by parasitic capacitance so much that this delay has become more of a problem than the gate delay [.]. To reduce this delay, we must reduce the parasitic capacitance of the intermetal dielectrics (IMD) as well 作者: 擴(kuò)大 時(shí)間: 2025-3-23 22:03 作者: 討好女人 時(shí)間: 2025-3-24 00:11
Metal/Polymer Interfacial Interactions,acial thermal stability, and (in the case of metallization via MOCVD) organometallic reactivity with the surface. An understanding of these issues in turn rests on a characterization of the chemical bonding interactions at the metal/ polymer interface. This chapter discusses the results of surface-s作者: choleretic 時(shí)間: 2025-3-24 02:29 作者: Omnipotent 時(shí)間: 2025-3-24 08:09
Plasma Etching of Low Dielectric Constant Materials,ents a rich spectrum of challenges. This is due to the multitude of low dielectric constant materials that are being considered for these applications, and their widely varying properties. We review generic patterning issues for inorganic, organic, and mixed organic/inorganic low dielectric constant作者: 壓倒 時(shí)間: 2025-3-24 13:24 作者: Chagrin 時(shí)間: 2025-3-24 17:02 作者: 軍械庫 時(shí)間: 2025-3-24 19:24 作者: 增長 時(shí)間: 2025-3-25 00:20
E. K. Lin,H. Lee,B. J. Bauer,H. Wang,J. T. Wetzel,W. WuLand Law debate.Includes a special chapter on the current la.This thesis provides a new approach to the Ethiopian Land Law debate. The basic argument made in this thesis is that even if the Ethiopian Constitution provides and guarantees common ownership of land (together with the state) to the peopl作者: MORT 時(shí)間: 2025-3-25 04:28 作者: Mast-Cell 時(shí)間: 2025-3-25 08:28 作者: 鋼筆記下懲罰 時(shí)間: 2025-3-25 13:44
W. Volksen,C. J. Hawker,J. L. Hedrick,V. Lee,T. Magbitang,M. Toney,R. D. Miller,E. Huang,J. Liu,K. Gnservation, sustainable development, and use of land, water, and other natural resources. Ecosystem-based, mul- tiple-use land stewardship is necessary when considering the present and future uses ofland, water, and other natural resources on an operationally efficient scale. We need holistically pl作者: engender 時(shí)間: 2025-3-25 19:17
D. M. Martini,J. A. Kelbermon in delta areas, where rivers empty into the oceans, along flood plains adjacent to rivers, and in coastal marsh lands.? Building cities in such areas aggravates the problem for several reasons:.1.? Construction of buildings and streets adds weight to the region causing additional soil deformatio作者: 一夫一妻制 時(shí)間: 2025-3-25 23:04 作者: Encapsulate 時(shí)間: 2025-3-26 03:49
G. S. Oehrlein,T. E. F. M. Standaert,P. J. Matsuonics. The problem has caused damage to infrastructures and resulted in huge economic loss in many regions of the world, posing a threat to sustainable development of cities. The problem has caused damage to infrastructures and resulted in huge economic loss in many regions of the world, posing a thr作者: 血統(tǒng) 時(shí)間: 2025-3-26 05:27
Joost J. Waeterlooscentrifuge model, the physical model, in-site monitoring, thThis book brings forward the concept of the geology-environmental capacity of ground buildings. It quantifies the geology-environmental capacity of ground buildings by analyzing the main factors of land subsidence and setting up the evaluat作者: Mhc-Molecule 時(shí)間: 2025-3-26 09:56
namics of the atmosphere. The oceans and continents store a portion of the incoming solar energy and eventually return it to the atmosphere. Over land, this delay is short because most of the net radiation returns to the atmosphere through turbulent exchanges that have rather small characteristic ti作者: subacute 時(shí)間: 2025-3-26 15:32
Paul S. Ho,Jihperng Jim Leu,Wei William LeeFirst one in the emerging field of low dielectric constant materials.There is worldwide a big need for such a book.Includes supplementary material: 作者: Melodrama 時(shí)間: 2025-3-26 18:25 作者: nurture 時(shí)間: 2025-3-27 00:56
978-3-642-63221-1Springer-Verlag Berlin Heidelberg 2003作者: watertight, 時(shí)間: 2025-3-27 04:33 作者: Acetaldehyde 時(shí)間: 2025-3-27 07:20
https://doi.org/10.1007/978-3-642-55908-2Dielectric Materials; Integrated circuit manufacture; Interconnects; Low dielectric constant; Permittivi作者: 松緊帶 時(shí)間: 2025-3-27 13:21
Overview on Low Dielectric Constant Materials for IC Applications,niques Finally, the development of porous low-k materials is briefly discussed and its challenge is highlighted by recent results obtained on the porosity effect on material properties of porous organosilicate films.作者: faucet 時(shí)間: 2025-3-27 14:36 作者: 充滿裝飾 時(shí)間: 2025-3-27 20:22 作者: attenuate 時(shí)間: 2025-3-27 23:12
Metal/Polymer Interfacial Interactions,med by metal evaporation and by MOCVD. The formation and diffusion of Al—F bonds across the metal/polymer interface is addressed. The effects of polymer surface composition on the reactivity of Al and Cu MOCVD precursors are reviewed. The third portion of the chapter discusses the advantages of form作者: 濕潤 時(shí)間: 2025-3-28 04:39
Diffusion Of Metals In Polymers And During Metal/Polymer Interface Formation,immobilized by aggregation. Diffusion into the polymer increases strongly at low deposition rates, where a large fraction of isolated metal atoms is able to diffuse into the polymer before being trapped by other atoms at or near the surface. The extent of diffusion appears to be determined by the ea作者: 催眠藥 時(shí)間: 2025-3-28 07:11 作者: Obstruction 時(shí)間: 2025-3-28 12:52 作者: senile-dementia 時(shí)間: 2025-3-28 15:24
Joost J. Waeterloosin Shanghai as case studies, this book will provide valuable insights to professors and graduate students in the field of Geotechnical Engineering, Civil Engineering, Engineering Geology and Environmental Geology..978-981-13-5693-3978-981-10-8040-1作者: 擔(dān)心 時(shí)間: 2025-3-28 22:08 作者: 關(guān)心 時(shí)間: 2025-3-28 22:55
W. N. Gill,S. Rogojevic,T. Luose power of the state in expropriating the land for unlimited activities puts the property owners under imminent risk of expropriation..978-3-319-36788-0978-3-319-14639-3Series ISSN 2190-5053 Series E-ISSN 2190-5061 作者: armistice 時(shí)間: 2025-3-29 03:28
Low Dielectric Constant Materials for IC Applications作者: 細(xì)查 時(shí)間: 2025-3-29 07:38
