標題: Titlebook: Light Scattering in Semiconductor Structures and Superlattices; David J. Lockwood,Jeff F. Young Book 1991 Springer Science+Business Media [打印本頁] 作者: Jejunum 時間: 2025-3-21 18:17
書目名稱Light Scattering in Semiconductor Structures and Superlattices影響因子(影響力)
書目名稱Light Scattering in Semiconductor Structures and Superlattices影響因子(影響力)學(xué)科排名
書目名稱Light Scattering in Semiconductor Structures and Superlattices網(wǎng)絡(luò)公開度
書目名稱Light Scattering in Semiconductor Structures and Superlattices網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Light Scattering in Semiconductor Structures and Superlattices被引頻次
書目名稱Light Scattering in Semiconductor Structures and Superlattices被引頻次學(xué)科排名
書目名稱Light Scattering in Semiconductor Structures and Superlattices年度引用
書目名稱Light Scattering in Semiconductor Structures and Superlattices年度引用學(xué)科排名
書目名稱Light Scattering in Semiconductor Structures and Superlattices讀者反饋
書目名稱Light Scattering in Semiconductor Structures and Superlattices讀者反饋學(xué)科排名
作者: Arable 時間: 2025-3-21 23:47
Light Scattering in Semiconductor Structures and Superlattices978-1-4899-3695-0Series ISSN 0258-1221 作者: FLIRT 時間: 2025-3-22 02:46
NATO Science Series B:http://image.papertrans.cn/l/image/586041.jpg作者: KEGEL 時間: 2025-3-22 04:33 作者: 空中 時間: 2025-3-22 10:21
https://doi.org/10.1007/978-1-4899-3695-0crystal; electron; material; scattering; semiconductor; semiconductor physics; semiconductors; spectroscopy作者: 乞丐 時間: 2025-3-22 16:45 作者: 沙文主義 時間: 2025-3-22 20:31
Acoustic, Optic and Interface Phonons: Low Symmetry Superlatticesuperlattice divides, through loss of translational symmetry, the volume of the BZ by an integer (mini-Brillouin zone, MBZ), and the number of . ? 0 modes is enhanced by the same factor. Thus the information that can be gained through optical spectroscopies may be greatly increased with respect to th作者: bioavailability 時間: 2025-3-22 23:48
Raman Scattering in α-Sn1_xGex Alloysbeen intensively studied during the past thirty years. In particular, light scattering techniques have been used to investigate the compositional dependence of phonon modes. Most of this work has concentrated on the three main Raman active optical vibrations, assigned to “Si-Si”, “Si-Ge”, and “Ge-Ge作者: 危機 時間: 2025-3-23 03:30 作者: 吹牛者 時間: 2025-3-23 07:01
Resonant Raman Scattering in GaAs-AlAs Multiquantum Wells Under Magnetic Fields to obtain information on different aspects of their electronic structure, as well as on their phonon properties. Thus, RRS has been used, among other methods, to investigate the two-dimensional character of excitons in SL’s and MQW s., the degree of localization of electron and hole wave functions.作者: 蒸發(fā) 時間: 2025-3-23 13:00
Optical Phonons and Raman Spectra in InAs/GaSb Superlatticeheir electronic properties .. To the best of our knowledge, their interesting dynamical properties are stiL.L. under investigation. A linear-chain model. has been applied to long period SL of this kind, giving the basic features of the normal modes of vibration for wavevectors along the SL-axis. Fur作者: AVOID 時間: 2025-3-23 14:58
Raman Scattering Studies of Optical Phonons in GaAs/AlAs and GaAs/AlxGa1-xAs Superlattices do not. As a consequence, in GaAs/AlAs superlattices the acoustic phonon modes are the folded modes which can propagate through the whole superlattice, and the optical modes are the confined modes which are confined in GaAs and AlAs layers, respectively. (GaAs)./(AlAs). superlattices on (001)-orien作者: ADORN 時間: 2025-3-23 18:27
Analysis of Raman Spectra of GeSi Ultrathin Superlattices and Epilayers one may construct a structure by depositing a few atomic layers of Ge on a silicon substrate, or build a superlattice (GemSin)p where m atomic layers of Ge are followed by n atomic layers of Si to form a super-cell, which is repeated p times along the growth direction. A versatile method for invest作者: 空氣 時間: 2025-3-23 22:38 作者: 歡呼 時間: 2025-3-24 03:47 作者: 伸展 時間: 2025-3-24 09:10 作者: 斗志 時間: 2025-3-24 12:05 作者: 漂浮 時間: 2025-3-24 18:54
Characterization of Strain and Epitaxial Quality in Si/Ge Heterostructuresh as double crystal diffractometry can be used to determine the strain partition, layer thickness, alloy composition and epitaxial quality in Si/Ge heterostruc-tures, and some of this information can also be obtained from Raman measurements of the acoustic and optic phonons. The relative merits of t作者: Campaign 時間: 2025-3-24 20:18 作者: homeostasis 時間: 2025-3-25 00:34 作者: 合群 時間: 2025-3-25 04:52 作者: jumble 時間: 2025-3-25 07:35
Towards Two Dimensional Micro-Raman Analysis of Semiconductor Materials and Devicesthicknesses in semiconductor superlattices and epitaxial layers. There is now the need to extend the technique to electronic and optoelectronic device structures, and indeed to be able to make such measurements on individual devices. This latter requirement demands the capability of analysing with a作者: ULCER 時間: 2025-3-25 13:05
Raman Spectroscopy for Characterization of Layered Semiconductor Materials and Devicesure device applications with reduced dimensionality. Considerable advances in the growth and processing of materials have allowed the production of high quality microstructures. Powerful techniques are necessary for the characterization of the large number of new materials and devices. Optical metho作者: 創(chuàng)新 時間: 2025-3-25 18:30 作者: 并排上下 時間: 2025-3-25 22:19 作者: 考得 時間: 2025-3-26 04:04
Manuel Cardona bringt einen exemplarisch vereinfachten Gedankengang und trifft dennoch das Wesentliche des heutigen Gerechtigkeitsproblems. Die bei weitem am h?ufigsten verletzten Menschenrechte in unserer Zeit sind soziale und ?konomische, wie etwa das Recht eines jeden “auf einen Lebensstandard, der seine und s作者: Working-Memory 時間: 2025-3-26 04:41
J. Menéndez,K. Sinha,H. H?chst,M. A. Engelhardties liegt nicht zuletzt daran, da? im Begriff der Staatsbürgerschaft zwei politikphilosophische Thematiken zusammenfallen: (1) gerechtfertigte normative Ansprüche von Bürgern gegenüber staatlichen Institutionen und gegeneinander, d.h. staatstheoretische überlegungen im weiteren Sinne; und (2) gerech作者: 稱贊 時間: 2025-3-26 12:31
E. Molinari,S. Baroni,P. Giannozzi,S. de GironcoliGrundstimmung der Diskussion um das internationale Wirtschaftssystem — mit gravierenden Konsequenzen für das Rollenverhalten und die Rollenerwartungen der davon betroffenen Akteure. Die gewaltsamen Proteste bei der Tagung der World Trade Organization Ende 1999 in Seattle, die Demonstrationen beim We作者: Anterior 時間: 2025-3-26 13:58
J. M. Calleja,F. Meseguer,F. Calle,C. López,L. Vi?a,C. Tejedor,K. Ploog,F. Brionesies liegt nicht zuletzt daran, da? im Begriff der Staatsbürgerschaft zwei politikphilosophische Thematiken zusammenfallen: (1) gerechtfertigte normative Ansprüche von Bürgern gegenüber staatlichen Institutionen und gegeneinander, d.h. staatstheoretische überlegungen im weiteren Sinne; und (2) gerech作者: FLOAT 時間: 2025-3-26 19:15
G. Kanellis,D. Berdekasie Werte der nationalen Selbstbestimmung und der weltweiten Gerechtigkeit. Um die Gr??e des Problems vor Augen zu führen, m?chte ich es erst einmal mit einfachen Begriffen umrei?en. . soll hier als distributive Gerechtigkeit im weltweiten Ma?stab verstanden werden (genauso, wie soziale Gerechtigkeit作者: LAVA 時間: 2025-3-27 00:43
Localised and Extended Acoustic Waves in Superlattices Light Scattering by Longitudinal Phononsstates associated with a perturbation of the perfect superlattice may exist inside these gaps. We have considered the case of defects which conserve the symmetry of translation parallel to the layers, namely a free surface, an interface with a substrate, and a planar defect.作者: Paleontology 時間: 2025-3-27 04:21
Phonon Spectra of Ultrathin GaAs/AlAs Superlatticesical predictions. This will allow us to draw conclusions on structural properties of such systems, and obtain indications on how LO modes can give useful information for characterization also in UT structures.作者: 跑過 時間: 2025-3-27 08:05 作者: guzzle 時間: 2025-3-27 12:52 作者: Engulf 時間: 2025-3-27 13:49 作者: 抵押貸款 時間: 2025-3-27 19:53
0258-1221 Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar 作者: Manifest 時間: 2025-3-27 23:17
Book 1991ctrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings w作者: Communal 時間: 2025-3-28 02:38 作者: 表狀態(tài) 時間: 2025-3-28 06:50 作者: dithiolethione 時間: 2025-3-28 13:21 作者: HILAR 時間: 2025-3-28 15:05 作者: Aspiration 時間: 2025-3-28 20:00 作者: 遺棄 時間: 2025-3-28 22:56 作者: 偽造者 時間: 2025-3-29 06:54
E. Molinari,S. Baroni,P. Giannozzi,S. de Gironcoliern vor so etwas Prosaischem wie einem Internationalen Patentamt, das stellt zweifellos einen Professionalisierungschub und einen gewichtigen Gewinn an Problembewu?tsein in ihren Reihen dar. Kann es doch heute aus ethischer Sicht nicht mehr darum gehen, die Berechtigung von Finanzm?rkten und Eigentu作者: 擁護 時間: 2025-3-29 11:05 作者: 非秘密 時間: 2025-3-29 14:47
G. Kanellis,D. Berdekasm zur Verfügung gestellt werden, h?ngt vom Ausma? seiner Not ab. Dies bedeutet nun, da? geographische Faktoren, wie Ort und politische Mitgliedschaft, aus der Perspektive der globalen Gerechtigkeit als irrelevant angesehen werden müssen. Wenn jemand ein bestimmtes Medikament braucht, um sein Leiden 作者: Exuberance 時間: 2025-3-29 18:59
Inelastic Light Scattering from Semiconductorskey and other important developments in the subject to date, biased to some extent by the knowledge and preferences of the contributors. We apologize in advance for any inadvertent omission of other major relevant research work.作者: Motilin 時間: 2025-3-29 22:20 作者: Living-Will 時間: 2025-3-30 02:43 作者: 清楚說話 時間: 2025-3-30 04:27 作者: leniency 時間: 2025-3-30 09:33
Interaction of Light with Acoustic Waves in Superlattices and Related Devices be easily transposed to the problem of light diffraction by ultrasounds in these microstructures . The use of ultrasonic waves (as compared with acoustic phonons of the light-scattering experiments) allows a flexibility by far larger, and the interaction efficiencies are much higher, since one can 作者: Gratulate 時間: 2025-3-30 12:55
Optical Phonon Raman Scattering as a Local Probe of Si-Ge Strained Layersity, layer thickness control at the monolayer level, atomically abrupt interfaces between the layers and excellent crystalline quality are aL.L. required. These requirements and the general scientific interest in the physics and chemistry of the strained Si-Ge system have placed a significant premiu作者: 娘娘腔 時間: 2025-3-30 17:17 作者: 用樹皮 時間: 2025-3-31 00:30 作者: CREEK 時間: 2025-3-31 01:57
The Raman Line Shape of Semiconductor Nanocrystalse interpretation of the spectrum is given, with emphasis on stress/strain, electromagnetic resonances for isolated grains, absorption effects in mixed phase films, surface or interface vibrations, and crystallinity of the film.作者: AND 時間: 2025-3-31 05:41
Raman Scattering of III-V and II-VI Semiconductor Microstructures-V or Silicon substrates which have the inherent potential for large scale integration with present technology. Here we report some of our work on the characterization of fabrication processes by Raman scattering.作者: 諂媚于性 時間: 2025-3-31 11:58
Towards Two Dimensional Micro-Raman Analysis of Semiconductor Materials and Devicesoratories we have been working towards the development of a Micro-Raman scattering system that will be capable of producing such two dimensional information on a microscopic scale..The progress achieved to date will be reported, and some preliminary results reporting the use of the system to map out作者: 休戰(zhàn) 時間: 2025-3-31 14:01 作者: 攤位 時間: 2025-3-31 18:24 作者: 為寵愛 時間: 2025-4-1 00:07 作者: Frenetic 時間: 2025-4-1 04:03
M. Watt,A. P. Smart,M. A. Foad,C. D. W. Wilkinson,H. E. G. Arnot,C. M. Sotomayor Torres作者: 沒收 時間: 2025-4-1 06:51 作者: jocular 時間: 2025-4-1 10:28
10樓作者: GULLY 時間: 2025-4-1 18:18
10樓作者: 撫育 時間: 2025-4-1 19:19
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