標(biāo)題: Titlebook: Laser Surface Treatment of Metals; Clifton W. Draper,Paolo Mazzoldi Book 1986 Martinus Nijhoff Publishers, Dordrecht 1986 metals.treatment [打印本頁] 作者: 營養(yǎng)品 時間: 2025-3-21 18:06
書目名稱Laser Surface Treatment of Metals影響因子(影響力)
書目名稱Laser Surface Treatment of Metals影響因子(影響力)學(xué)科排名
書目名稱Laser Surface Treatment of Metals網(wǎng)絡(luò)公開度
書目名稱Laser Surface Treatment of Metals網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Laser Surface Treatment of Metals被引頻次
書目名稱Laser Surface Treatment of Metals被引頻次學(xué)科排名
書目名稱Laser Surface Treatment of Metals年度引用
書目名稱Laser Surface Treatment of Metals年度引用學(xué)科排名
書目名稱Laser Surface Treatment of Metals讀者反饋
書目名稱Laser Surface Treatment of Metals讀者反饋學(xué)科排名
作者: analogous 時間: 2025-3-21 20:46
The Kinetics of Rapid Crystallization in Pure Metals transient change in conductance (7). Both of these experiments were facilitated by the dissimilarity of the crystal and its melt; the reflectance differs by a factor of two and the dc conductivity by several orders of magnitude. In metals the reflectance changes by only about 5% on melting and the 作者: Pigeon 時間: 2025-3-22 00:57 作者: 鞭子 時間: 2025-3-22 05:37
Laser Treatment of La-Implanted Ni Single Crystaling oxidation and trapping of solute at the surface. The experimental solute profiles are then reproduced with a liquid phase diffusion analysis including such a mechanism..TEM analysis shows the formation of an amorphous phase in La-implanted Ni, which transforms into a polycrystalline layer after 作者: 抱怨 時間: 2025-3-22 10:57 作者: 統(tǒng)治人類 時間: 2025-3-22 12:54 作者: Radiation 時間: 2025-3-22 17:37 作者: 實(shí)現(xiàn) 時間: 2025-3-22 23:27 作者: 侵害 時間: 2025-3-23 03:47
S. Williamson,G. Mourount. Special attention is given to advantages and limitations of linear time invariant (LTI) phase noise modeling, leading to the concept of optimum coupling in 978-1-4419-5387-2978-0-306-48716-3Series ISSN 0893-3405 作者: multiply 時間: 2025-3-23 07:08 作者: MOAN 時間: 2025-3-23 12:04 作者: 雪崩 時間: 2025-3-23 16:37
L. G. Dona dalle Rosent. Special attention is given to advantages and limitations of linear time invariant (LTI) phase noise modeling, leading to the concept of optimum coupling in 978-1-4419-5387-2978-0-306-48716-3Series ISSN 0893-3405 作者: GRE 時間: 2025-3-23 21:16
first time by implementing polarization-engineered barriers in the emitter-base and base-collector junctions. Hot electron spectrometry and ballistic electron reflection in THETA were observed with the evidence of electron energy distribution and room temperature negative differential resistance (ND作者: 前面 時間: 2025-3-24 01:47 作者: 壕溝 時間: 2025-3-24 06:01
T. J. Rockstroh,J. Mazumderillator properties at circuit level follows taking parasitic elements and other practical aspects of integrated oscillator design into account. Special attention is given to advantages and limitations of linear time invariant (LTI) phase noise modeling, leading to the concept of optimum coupling in 作者: 熱心 時間: 2025-3-24 10:26 作者: 膽汁 時間: 2025-3-24 13:13 作者: 欺騙手段 時間: 2025-3-24 15:50 作者: Substitution 時間: 2025-3-24 20:19
P. S. Peercyillator properties at circuit level follows taking parasitic elements and other practical aspects of integrated oscillator design into account. Special attention is given to advantages and limitations of linear time invariant (LTI) phase noise modeling, leading to the concept of optimum coupling in 作者: 發(fā)電機(jī) 時間: 2025-3-24 23:22 作者: COMA 時間: 2025-3-25 07:12
C. A. MacDonald,F. Spaepenillator properties at circuit level follows taking parasitic elements and other practical aspects of integrated oscillator design into account. Special attention is given to advantages and limitations of linear time invariant (LTI) phase noise modeling, leading to the concept of optimum coupling in 作者: 修改 時間: 2025-3-25 11:01
J. Fr?hlingsdorf,B. Stritzkerillator properties at circuit level follows taking parasitic elements and other practical aspects of integrated oscillator design into account. Special attention is given to advantages and limitations of linear time invariant (LTI) phase noise modeling, leading to the concept of optimum coupling in 作者: 擺動 時間: 2025-3-25 14:32
E. Petit,P. Warnant,P. A. Thiry,R. Caudanoillator properties at circuit level follows taking parasitic elements and other practical aspects of integrated oscillator design into account. Special attention is given to advantages and limitations of linear time invariant (LTI) phase noise modeling, leading to the concept of optimum coupling in 作者: 未完成 時間: 2025-3-25 16:58
Paul Peercy,Spaepen,Williamson,Mac Donald,Mazzoldi,Fr?hlingsdorf,Jacobson,Helms,Petit,Kaufmannillator properties at circuit level follows taking parasitic elements and other practical aspects of integrated oscillator design into account. Special attention is given to advantages and limitations of linear time invariant (LTI) phase noise modeling, leading to the concept of optimum coupling in 作者: Abrade 時間: 2025-3-25 20:01 作者: 白楊魚 時間: 2025-3-26 01:29 作者: Radiation 時間: 2025-3-26 05:04 作者: 掃興 時間: 2025-3-26 10:26 作者: Fortuitous 時間: 2025-3-26 15:51 作者: FUSC 時間: 2025-3-26 19:07
Genesis of Meltingtanding interest in this most basic of phase transitions has nevertheless resulted in a great number of theoretical interpretations. The key question still to be answered is, what happens on the atomic scale when a crystal melts?作者: progestogen 時間: 2025-3-26 23:42 作者: 鄙視 時間: 2025-3-27 01:17 作者: urethritis 時間: 2025-3-27 05:39 作者: 故意 時間: 2025-3-27 12:07 作者: TAG 時間: 2025-3-27 13:41 作者: 誘導(dǎo) 時間: 2025-3-27 21:38
W. W. Duleyrealize integrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulat作者: PLE 時間: 2025-3-27 22:46
Fritz Keilmannrealize integrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulat作者: 嗎啡 時間: 2025-3-28 03:26
T. J. Rockstroh,J. Mazumdertegrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulator). Start作者: 到婚嫁年齡 時間: 2025-3-28 07:12 作者: Finasteride 時間: 2025-3-28 13:55
R. Koppmann,S. M. Refaei,A. Pospieszczykrealize integrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulat作者: 指耕作 時間: 2025-3-28 16:08 作者: AUGUR 時間: 2025-3-28 19:32
F. Spaepen,P. S. Peercytegrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulator). Start作者: Vo2-Max 時間: 2025-3-29 01:06 作者: ANTIC 時間: 2025-3-29 04:19
Frans Spaepentegrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulator). Start作者: 有常識 時間: 2025-3-29 07:50
E. N. Kaufmann,R. J. Wallacerealize integrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulat作者: 枯萎將要 時間: 2025-3-29 12:35
C. A. MacDonald,F. Spaepentegrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulator). Start作者: Crayon 時間: 2025-3-29 16:17
S. Williamson,G. Mourourealize integrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulat作者: 歡呼 時間: 2025-3-29 21:23
J. Fr?hlingsdorf,B. Stritzkertegrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulator). Start作者: fiscal 時間: 2025-3-30 03:18 作者: Minutes 時間: 2025-3-30 07:54 作者: 聚集 時間: 2025-3-30 10:49
G. Battaglin,A. Carnera,G. Della Mea,V. Kulkarni,P. Mazzoldi,D. K. Sood,A. P. Pogarnyrealize integrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulat作者: 擁護(hù) 時間: 2025-3-30 14:54 作者: 眨眼 時間: 2025-3-30 19:02
L. G. Dona dalle Roserealize integrated transceivers for wireless and wired applications. This includes the design of oscillator types as single-phase LC oscillators, I/Q LC oscillators, multi-phase LC oscillators, and ring oscillators in various IC technologies such as bipolar, BiCMOS, CMOS, and SOI (silicon on insulat作者: CLASH 時間: 2025-3-30 21:22
Chapter Introductioning tools. However, the overall efficiency of this new technology is limited, in many instances, by the difficulty of obtaining effective coupling between incident laser radiation and the workpiece. High reflectivity, plasma shielding and gas absorption all conspire to reduce the overall coupling of作者: lipids 時間: 2025-3-31 03:41
Laser Material Interactions of Relevance To Metal Surface Treatmentis of available theoretical descriptions of the absorptivity A and its temperature dependence. Experimental coupling coefficients for cw CO. laser radiation on metals over the range 20–1000°C are reported. The effect of oxidation on these coefficients is discussed. Finally, several methods of increa作者: 不規(guī)則 時間: 2025-3-31 06:42
Stimulated Absorption of C02 Laser Light on Metalse of initial surface roughness, which by a stimulated process grows into a coherent periodic corrugation or “ripple” pattern, owing to a nonlinear interaction with surface plasmons. Once developed, this ripple pattern acts as an anti-reflective coating, enabling the full absorption of the incoming r作者: 沐浴 時間: 2025-3-31 10:45
Characterization of Laser-Induced Plasmas and Temperature Measurement During Laser Surface Treatmentting and vaporization as in laser surface alloying. Due to short dwell times, high temperatures and steep gradients, it is difficult to measure surface temperatures during laser/target interaction. Processes involving vaporization are more complicated to monitor due to the resulting plasma formation作者: GROSS 時間: 2025-3-31 15:18
Laser/Materials Interactions: CW DF Laser Ablation of Carbonhe intrinsic ablation performance of these materials and to measure their responses and properties under well-characterized laser irradiation conditions. Several hundred experiments were performed over a broad range of intensities in order to determine burnthrough times, reflectances at DF wavelengt作者: Malleable 時間: 2025-3-31 21:17 作者: affect 時間: 2025-4-1 00:24
Chapter Introductionn processes in metals and alloys under these unusual conditions is less developed than in the case of silicon. One reason for this, of course, was the perceived technological importance of laser processing of silicon, which led to a broad-based, concentrated study of this problem. Furthermore, many 作者: esculent 時間: 2025-4-1 01:54 作者: considerable 時間: 2025-4-1 08:41
Crystallization and Nucleation Phenomena in CW Surface Melted Alloysnts of the theory which applies to solidification interface velocities and crystallization phenomena. There are many similarities between the pulsed regime and the continuous wave or cw regime of surface melting. In one respect, however, there is an important difference. With pulsed heating, the iso作者: 發(fā)源 時間: 2025-4-1 10:52
The Kinetics of Rapid Crystallization in Pure Metalsmetals. The case of silicon has been extensively investigated. However, the solidification of silicon is also accompanied by a change in the character of the atomic bonding, from metallic in the liquid to covalent in the crystal. This work examines ultrarapid crystallization in metals in order to st作者: 巫婆 時間: 2025-4-1 15:05
Genesis of Meltingtanding interest in this most basic of phase transitions has nevertheless resulted in a great number of theoretical interpretations. The key question still to be answered is, what happens on the atomic scale when a crystal melts?
