標(biāo)題: Titlebook: Large Scale Integrated Circuits Technology: State of the Art and Prospects; Proceedings of the N Leo Esaki,Giovanni Soncini Conference proc [打印本頁] 作者: 漠不關(guān)心 時(shí)間: 2025-3-21 18:37
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作者: 強(qiáng)有力 時(shí)間: 2025-3-21 23:44
Conference proceedings 1982nnovations in semiconductor microelectronics. Such innova- tions, indeed, are dramatically reducing the cost of transmitting, storing, and processing information with improved performance, ushering in an era charac- terized by large scale integration -the subject of this book.作者: 糾纏 時(shí)間: 2025-3-22 00:46 作者: 儲(chǔ)備 時(shí)間: 2025-3-22 04:57 作者: Facilities 時(shí)間: 2025-3-22 09:37
argeted therapy for lymphoma. This chapter will focus on the molecular pathogenesis of lymphoma and discuss current clinical molecular diagnostic testing and its limitations and emphasize interpretation of molecular results in the context of clinical features, morphology, or other studies.作者: 圓錐 時(shí)間: 2025-3-22 15:19
argeted therapy for lymphoma. This chapter will focus on the molecular pathogenesis of lymphoma and discuss current clinical molecular diagnostic testing and its limitations and emphasize interpretation of molecular results in the context of clinical features, morphology, or other studies.作者: incarcerate 時(shí)間: 2025-3-22 18:10 作者: PLIC 時(shí)間: 2025-3-23 00:58
https://doi.org/10.1007/978-94-009-7645-0LSI; VLSI; computer; development; integrated circuit; physics; semiconductor; semiconductor devices; simulat作者: LAVE 時(shí)間: 2025-3-23 03:42 作者: 前奏曲 時(shí)間: 2025-3-23 05:37 作者: depreciate 時(shí)間: 2025-3-23 10:40
Lithography Systems for VLSIThis article describes the different lithographic approaches being used to fabricate microcircuits. All approaches are directed towards reducing dimensions and packing components closer together. The accuracy with which structures can be placed is as important as how small the structures can be.作者: 暫時(shí)別動(dòng) 時(shí)間: 2025-3-23 15:53
Advanced Bipolar Devices and Related ProblemsThere exists an increasing demand for new data processing systems which feature high performance, smaller system size, low cost and high reliability.作者: 拱形面包 時(shí)間: 2025-3-23 19:03 作者: 包裹 時(shí)間: 2025-3-24 01:00
Large Scale Integrated Circuits Technology: State of the Art and Prospects978-94-009-7645-0Series ISSN 0168-132X 作者: 原告 時(shí)間: 2025-3-24 05:18 作者: 公司 時(shí)間: 2025-3-24 10:13
Silicon Crystals for Large Scale Integrated Circuitsd for electronic-grade poly-crystalline silicon., which in 1980 has already exceeded 2000 tons/year (Fig. 1). The major driving force of the electronic industry is integrated circuits, which require high quality large diameter (75–125 mm) single crystalline wafers and ingots.作者: 金絲雀 時(shí)間: 2025-3-24 13:19
Computer Simulation of Complete IC Fabrication Processon which make it possible to numerically simulate multiple diffused species -- arsenic-boron and phosphorus-boron -- as well as redistribution effects associated with moving boundaries in oxidation and epitaxy will be discussed.作者: jungle 時(shí)間: 2025-3-24 16:09
Bipolar Linear Integrated Circuitsnufacturer has always been willing to respond to customer demands and realize any given function with specific characteristics. This has resulted in the large number of integrated circuits presently available.作者: 完全 時(shí)間: 2025-3-24 21:09
Bipolar Digital Circuitsal p-n-p transistors of rather poor performance. This range of components gives the bipolar process the flexibility to make a wide variety of digital and analogue circuits on the same process, or even the same chip.作者: Infraction 時(shí)間: 2025-3-24 23:33 作者: Atheroma 時(shí)間: 2025-3-25 03:34 作者: Acquired 時(shí)間: 2025-3-25 09:10
LSI: Prospects and Problemsional capability. Integration and miniaturization are the routes by which this is accomplished. Progress in integration and miniaturization involves solving a continual series of technological problems in lithography and chemical process technology.作者: 愛管閑事 時(shí)間: 2025-3-25 15:04
Silicon Crystals for Large Scale Integrated Circuitsd for electronic-grade poly-crystalline silicon., which in 1980 has already exceeded 2000 tons/year (Fig. 1). The major driving force of the electronic industry is integrated circuits, which require high quality large diameter (75–125 mm) single crystalline wafers and ingots.作者: 生氣的邊緣 時(shí)間: 2025-3-25 18:05
Structural Techniques for Bulk Defects Characterizationaphy, transmission and scanning electron microscopy. Examples of defects analysis are reported concerning the characterization of the defects introduced by the phosphorous predeposition in Si and the study of dark current sources in charge-coupled devices. A final section is dedicated to a more deta作者: farewell 時(shí)間: 2025-3-25 22:13 作者: Judicious 時(shí)間: 2025-3-26 00:39 作者: 護(hù)身符 時(shí)間: 2025-3-26 06:38
Silicon Epitaxyss for device technology are discussed in other sections of this lecture series. Here we will concentrate on epitaxy by chemical vapor deposition (CVD), which is to be contrasted with physical vapor deposition where atoms to be deposited are emitted by a heated source and are incident on the substra作者: 蔑視 時(shí)間: 2025-3-26 11:17
Computer Simulation of Complete IC Fabrication Processon which make it possible to numerically simulate multiple diffused species -- arsenic-boron and phosphorus-boron -- as well as redistribution effects associated with moving boundaries in oxidation and epitaxy will be discussed.作者: 損壞 時(shí)間: 2025-3-26 12:54
Beam Processing Techniques Applied to Crystal Silicon Substratestemperature fabrication steps are rate determined by a solid-state diffusion process (e.g. oxidation, dopant diffusion and redistribution, radiation damage annealing, gettering,...) whose diffusion constant is exponentially dependent on temperature with activation energies of the order of a few eV. 作者: BRIDE 時(shí)間: 2025-3-26 19:26 作者: 得體 時(shí)間: 2025-3-27 00:38 作者: 婚姻生活 時(shí)間: 2025-3-27 04:16 作者: osteocytes 時(shí)間: 2025-3-27 09:08
Conference proceedings 1982 Scientific Culture, Erice (Italy) on July 15-27, 1981, the first course of the International School of Solid-State Device Research. This volume contains the School Proceedings: fundamentals as well as up-to-date information on each subject presented by qualified authors. The material covered in thi作者: Nausea 時(shí)間: 2025-3-27 09:42 作者: 先兆 時(shí)間: 2025-3-27 13:48
Beam Processing Techniques Applied to Crystal Silicon Substratesand for processing times t > 10. sec, this lower limit being related to the time required for insertion and extraction of the furnace boat which carries the batch of silicon slices to be heat-treated.作者: 受人支配 時(shí)間: 2025-3-27 20:56 作者: 擴(kuò)音器 時(shí)間: 2025-3-27 22:06
Planar Processing: Silicon Oxidationogy. Some problems concerning the properties and the growth of field oxides will also be addressed. Finally, advanced oxidation techniques such as HCl-oxidation, and high pressure oxidation will be briefly discussed.作者: 不可磨滅 時(shí)間: 2025-3-28 05:24
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