標(biāo)題: Titlebook: Kinetics of Ordering and Growth at Surfaces; Max G. Lagally Book 1990 Plenum Press, New York 1990 Surface science.crystal.kinetics [打印本頁(yè)] 作者: 時(shí)間 時(shí)間: 2025-3-21 16:44
書(shū)目名稱(chēng)Kinetics of Ordering and Growth at Surfaces影響因子(影響力)
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書(shū)目名稱(chēng)Kinetics of Ordering and Growth at Surfaces網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱(chēng)Kinetics of Ordering and Growth at Surfaces網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱(chēng)Kinetics of Ordering and Growth at Surfaces被引頻次
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書(shū)目名稱(chēng)Kinetics of Ordering and Growth at Surfaces年度引用學(xué)科排名
書(shū)目名稱(chēng)Kinetics of Ordering and Growth at Surfaces讀者反饋
書(shū)目名稱(chēng)Kinetics of Ordering and Growth at Surfaces讀者反饋學(xué)科排名
作者: Antioxidant 時(shí)間: 2025-3-21 21:17 作者: wreathe 時(shí)間: 2025-3-22 04:07
Structure and Ordering of Metal Overlayers on Si(111) and Ge(111) Surfaces.Au on Si (111) is known to have a 5×1 structure saturating at about 0.4 ML, a √3 structure at 1 ML and a 6×6 at 1.5 ML. We have performed x-ray diffraction studies of all three structures and will discuss the structural analysis and the complications arising from disorder.作者: CRUC 時(shí)間: 2025-3-22 08:14
Si Molecular Beam Epitaxy: A Comparison of Scanning Tunneling Microscopy Observations with Computer h biatomic steps. For higher coverages island formation is observed..These observations have been compared with Monte Carlo computer simulations, and the characteristic activation energies involved have been deduced.作者: Postmenopause 時(shí)間: 2025-3-22 11:56 作者: florid 時(shí)間: 2025-3-22 16:39
Direct Epitaxial Growth of Quantum Structures with two and Three-Dimensional Carrier Confinementth template; their growth requires additionally a self organization of the epitaxy. The CSL could be used for the direct growth of quantum box superlattices. The TSL have been used to produce quantum wire superlattices. Their unique optical properties are a direct consequence of two dimensional carrier confinement.作者: GRACE 時(shí)間: 2025-3-22 17:52
Growth and Ordering of Ag Submonoiayers on Ge(111)the faceting due to heating of a misoriented Ge(111) with submonolayers of Ag is studied in the same way. It is shown that quantitative analysis of growth and ordering is now possible for inhomogeneous surfaces as done so far with homogeneous surfaces.作者: 柏樹(shù) 時(shí)間: 2025-3-22 22:15
Microscopic Aspects of the Initial Stages of Epitaxial Growth: A Scanning Tunneling Microscopy Studymicroscopy measurements of the ordering and growth of Si on Si(001) are used to illustrate these mechanisms. Diffusion coefficients, growth anisotropy and lateral accommodation coefficients, equilibrium island shapes and free energies, edge desorption energies, and diffusional anisotropy are discussed.作者: recede 時(shí)間: 2025-3-23 02:25 作者: Genetics 時(shí)間: 2025-3-23 08:20 作者: NOVA 時(shí)間: 2025-3-23 11:50
Scanning Tunneling Microscopy Study of Ge Molecular Beam Epitaxy on Si(111) 7×7c. Triangular shaped islands and large reconstructed areas of (5×5) or (7×7) are observed. For coverages of about 5 ML the misfit of germanium to silicon leads to strain, which results in a quite disordered layer. For coverages of more than 10 ML the layer relaxes and assimilates the germanium bulk behavior. Here dislocations have been observed.作者: landfill 時(shí)間: 2025-3-23 16:40 作者: 小臼 時(shí)間: 2025-3-23 21:51
Ole G. Mouritsenneed?.Game Development Tool Essentials... .Covers readily available tools and tools developers can build themselves.. .Presents 96 code samples, 81 illustrations, and e978-1-4302-6700-3978-1-4302-6701-0作者: Cerumen 時(shí)間: 2025-3-24 01:59 作者: intolerance 時(shí)間: 2025-3-24 02:24 作者: Spangle 時(shí)間: 2025-3-24 08:50 作者: LATE 時(shí)間: 2025-3-24 12:59 作者: Protein 時(shí)間: 2025-3-24 17:05 作者: extemporaneous 時(shí)間: 2025-3-24 20:25
G. Le Lay,M. Abraham,K. Hricovini,J. E. Bonnetneed?.Game Development Tool Essentials... .Covers readily available tools and tools developers can build themselves.. .Presents 96 code samples, 81 illustrations, and e978-1-4302-6700-3978-1-4302-6701-0作者: Contend 時(shí)間: 2025-3-25 02:59 作者: 假裝是你 時(shí)間: 2025-3-25 05:00 作者: lobster 時(shí)間: 2025-3-25 08:49
M. Henzler,H. Busch,G. Friese exporting and workflow; asset management and compiler architecture; and moving tools to the cloud. If you’re a game developer, you need?.Game Development Tool Essentials... .Covers readily available tools and tools developers can build themselves.. .Presents 96 code samples, 81 illustrations, and e作者: 狼群 時(shí)間: 2025-3-25 13:47 作者: 秘傳 時(shí)間: 2025-3-25 18:49
Boyan Mutaftschiev exporting and workflow; asset management and compiler architecture; and moving tools to the cloud. If you’re a game developer, you need?.Game Development Tool Essentials... .Covers readily available tools and tools developers can build themselves.. .Presents 96 code samples, 81 illustrations, and e作者: CHIP 時(shí)間: 2025-3-25 23:51
R. Feidenhans’l,F. Grey,M. Nielsen,R. L. Johnson exporting and workflow; asset management and compiler architecture; and moving tools to the cloud. If you’re a game developer, you need?.Game Development Tool Essentials... .Covers readily available tools and tools developers can build themselves.. .Presents 96 code samples, 81 illustrations, and e作者: Flu表流動(dòng) 時(shí)間: 2025-3-26 00:20 作者: 額外的事 時(shí)間: 2025-3-26 07:03 作者: Demonstrate 時(shí)間: 2025-3-26 10:40
T. Sakamoto,K. Sakamoto,K. Miki,H. Okumura,S. Yoshida,H. Tokumoto exporting and workflow; asset management and compiler architecture; and moving tools to the cloud. If you’re a game developer, you need?.Game Development Tool Essentials... .Covers readily available tools and tools developers can build themselves.. .Presents 96 code samples, 81 illustrations, and e作者: Mettle 時(shí)間: 2025-3-26 12:57 作者: 財(cái)主 時(shí)間: 2025-3-26 20:19 作者: 食道 時(shí)間: 2025-3-26 23:00 作者: 向外 時(shí)間: 2025-3-27 04:43 作者: ALE 時(shí)間: 2025-3-27 05:21
The Effects of Mobile Vacancies and Impurities on the Kinetics of Ordering at Surfaceslevant for the interpretation of experiments on ordering in impure overlayers on solid surfaces. The finding of a crossover from an algebraic growth law for the pure system to a much slower growth mode in the dilute system is in accordance with recent high-resolution LEED experiments on the oxygen o作者: 使長(zhǎng)胖 時(shí)間: 2025-3-27 10:01
Atomic Beam Scattering Studies of Ordering at Surfacese constant of the first monolayer deviate markedly from the equilibrium structure and lattice constant of the bulk material..The influence of the substrate on the structure and dynamics of the first adlayer proceeds via the strength and lateral corrugation of the holding potential and — in real life作者: 揮舞 時(shí)間: 2025-3-27 17:35
Helium ATOM Scattering Studies of Single Uncorrelated and Correlated Defects on Surfaces and (111) planes, yields information on the concentration, orientation and structure of single steps (Pt(lll), Al(111), Cu(111) and Ni(001)). In accord with the unique sensitivity of HAS to step edges the diffraction patterns from periodically stepped surfaces show a rich structure. A careful kinem作者: 不愛(ài)防注射 時(shí)間: 2025-3-27 20:56
Kinetics of Strain-Induced Domain Formation at Surfacesto produce or remove the unequal domain populations depend on the temperature, the steady state depends only on the strain and the vicinality but not on the temperature. The kinetics closely follow a simple relaxation .. 1/r is thermally activated with an activation energy of 2.2 ± 0.2 eV. One strik作者: Chameleon 時(shí)間: 2025-3-27 23:29
Surface Kinetics and Growth Morphology: Theoretical Models and Physical Realizationsfferent roughness of the Pt-surface during growth in the temperature range of 130–400 K, as due to the competition between propagation of growth fronts and two-dimensional nucleation on the flat regions between them..The third part of the paper deals with the changes in the electronic structure of P作者: grotto 時(shí)間: 2025-3-28 02:54 作者: 成份 時(shí)間: 2025-3-28 06:32 作者: MOCK 時(shí)間: 2025-3-28 10:55
Book 1990rating dialogue on the fundamental structural and kinetic processes that lead to the initial stages of film growth, from both the surface science and crystal growth perspectives. To achieve this, alternate days emphasized the view of surface science and thin-film growth, with considerable time for d作者: Ballerina 時(shí)間: 2025-3-28 17:04
978-1-4612-7911-2Plenum Press, New York 1990作者: 慢跑鞋 時(shí)間: 2025-3-28 21:00
Kinetics of Ordering and Growth at Surfaces978-1-4613-0653-5Series ISSN 0258-1221 作者: 財(cái)產(chǎn) 時(shí)間: 2025-3-28 23:01 作者: delegate 時(shí)間: 2025-3-29 05:12 作者: bisphosphonate 時(shí)間: 2025-3-29 09:34 作者: eucalyptus 時(shí)間: 2025-3-29 11:38 作者: 允許 時(shí)間: 2025-3-29 17:19
Kinetics of Ordering and Growth in 2-D Systemste-stage growth in atomic and molecular overlayers adsorbed on solid surfaces. The general phenomenology and the classical theories of late-stage non-equilibrium ordering processes in condensed matter are reviewed within a framework in which the ordering process is seen as a pattern formation proces作者: Synovial-Fluid 時(shí)間: 2025-3-29 19:56
Growth Kinetics of Wetting Layers at Surfacesubic lattice with nonconserved “Glauber dynamics” is used, applying a slab geometry (LxL cross section). It is shown that the growth proceeds in two stages: for short times t, the thickness of the wetting layer at an initially nonwet wall increases proportional to the logarithm of the time; for t ? 作者: Decrepit 時(shí)間: 2025-3-30 01:52
The Effects of Mobile Vacancies and Impurities on the Kinetics of Ordering at Surfacesis studied as a function of vacancy concentration by means of Monte Carlo temperature-quenching simulations. The models are Ising antiferromagnets with couplings leading to two-fold degenerate as well as four-fold degenerate (2 × 1)-ordering. The growth for the pure systems is found to be described 作者: Meditative 時(shí)間: 2025-3-30 06:26 作者: handle 時(shí)間: 2025-3-30 11:28
Helium ATOM Scattering Studies of Single Uncorrelated and Correlated Defects on Surfacesyer, entirely non-destructive and applicable to all types of surfaces: insulators, semiconductors, and metals. With the recent advent of improved energy resolution (1%) and sensitivity (dynamic range of 10.) HAS is becoming increasingly useful in the study of defects on surfaces as well as for study作者: Radiation 時(shí)間: 2025-3-30 13:02
Growth and Ordering of Ag Submonoiayers on Ge(111)ay the growth of incommensurate Ag islands on Ge(111) 2×8 is analyzed providing growth mode and scattering parameters including the phase shift. Also the faceting due to heating of a misoriented Ge(111) with submonolayers of Ag is studied in the same way. It is shown that quantitative analysis of gr作者: 別炫耀 時(shí)間: 2025-3-30 18:49 作者: instulate 時(shí)間: 2025-3-30 21:30 作者: companion 時(shí)間: 2025-3-31 03:18
Surface Kinetics and Growth Morphology: Theoretical Models and Physical Realizations to periodic square shaped pulses of a molecular beam. Two mathematical solutions are proposed: the periodic steady state solution which allows the determination of mean stay time and scaled interstep distance on the surface from measurements of phase shift and amplitude attenuation of the reemitted作者: 否認(rèn) 時(shí)間: 2025-3-31 07:38 作者: 無(wú)目標(biāo) 時(shí)間: 2025-3-31 10:53 作者: 遭遇 時(shí)間: 2025-3-31 13:54 作者: 彎腰 時(shí)間: 2025-3-31 17:40
Direct Epitaxial Growth of Quantum Structures with two and Three-Dimensional Carrier Confinemented superlattices” (TSL) are produced by using the periodic step array of a vicinal surface as a template. The role of phase stability, growth kinetics, step orientation and periodicity on the TSL perfection are discussed. The “columnar superlattice” (CSL) also uses a periodic step faceting as a grow作者: PON 時(shí)間: 2025-4-1 00:22 作者: kyphoplasty 時(shí)間: 2025-4-1 02:08
Silicon Molecular Beam Epitaxye considered, using RHEED and STM. Ge-on-Si heteroepitaxy is discussed, including growth mode and lattice relaxation. Strained-layer superlattices have been fabricated by phase-locked epitaxy; analysis suggests that Ge./Si. has a direct band gap.
