標題: Titlebook: Kinetics of Catalytic Reactions; M. Albert Vannice Textbook 2005 Springer-Verlag US 2005 Absorption.catalysis.chemical engineering.chemist [打印本頁] 作者: 富裕 時間: 2025-3-21 17:29
書目名稱Kinetics of Catalytic Reactions影響因子(影響力)
書目名稱Kinetics of Catalytic Reactions影響因子(影響力)學科排名
書目名稱Kinetics of Catalytic Reactions網(wǎng)絡公開度
書目名稱Kinetics of Catalytic Reactions網(wǎng)絡公開度學科排名
書目名稱Kinetics of Catalytic Reactions被引頻次
書目名稱Kinetics of Catalytic Reactions被引頻次學科排名
書目名稱Kinetics of Catalytic Reactions年度引用
書目名稱Kinetics of Catalytic Reactions年度引用學科排名
書目名稱Kinetics of Catalytic Reactions讀者反饋
書目名稱Kinetics of Catalytic Reactions讀者反饋學科排名
作者: 善于騙人 時間: 2025-3-21 23:16 作者: ungainly 時間: 2025-3-22 02:20
M. Albert Vannices of system introduction. Some great achievements have been made, and others are yet to come: we will see higher operation frequencies, greater wafer formats, still higher output powers, and great results in linearity, efficiency, and bandwidth. However, as the experience of the GaAs devices has pro作者: Campaign 時間: 2025-3-22 06:13 作者: climax 時間: 2025-3-22 11:25
M. Albert VanniceFurther, circuit design can be simplified, since enhancement-mode MOSFETs can be used to form single supply voltage control circuits for power transistors. The use of MOSFETs also allows the use of complementary devices, thus producing less power consumption and simpler circuit design. A critical ne作者: gain631 時間: 2025-3-22 13:38 作者: deficiency 時間: 2025-3-22 21:05 作者: 柏樹 時間: 2025-3-23 00:34 作者: Genistein 時間: 2025-3-23 04:07 作者: 小故事 時間: 2025-3-23 08:14 作者: evaculate 時間: 2025-3-23 10:34 作者: ESO 時間: 2025-3-23 17:34
cs chosen, the clarity of presentation, and the liberal use of specific examples illuminate the full slate of issues that must be mastered to produce reliable kinetic results. The unique combination of characte978-1-4419-3758-2978-0-387-25972-7作者: 指派 時間: 2025-3-23 18:27
Textbook 2005uide to success for reaction rate measurements and analysis in catalytic systems. The topics chosen, the clarity of presentation, and the liberal use of specific examples illuminate the full slate of issues that must be mastered to produce reliable kinetic results. The unique combination of characte作者: 阻撓 時間: 2025-3-24 01:01
its. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi- mate circuit performance 978-1-4612-8826-8978-1-4613-1541-4Series ISSN 0893-3405 作者: 極肥胖 時間: 2025-3-24 05:52
Kinetic Data Analysis and Evaluation of Model Parameters for Uniform (Ideal) Surfaces,作者: Stress-Fracture 時間: 2025-3-24 10:13
Modeling Reactions on Nonuniform (Nonideal) Surfaces,作者: tendinitis 時間: 2025-3-24 14:41
M. Albert Vannicessary to sort out the details. Disappointments will also occur for industrialization, as the emerging markets will not be able to support all business plans. Schumpeter’s law of the rise and fall of innovators and competitors will play a dominant role.作者: licence 時間: 2025-3-24 16:19 作者: STALE 時間: 2025-3-24 22:33 作者: chapel 時間: 2025-3-25 00:13 作者: Fulminate 時間: 2025-3-25 07:15 作者: Frisky 時間: 2025-3-25 10:28
M. Albert Vanniceis crucially dependent on the drain current – voltage locus curve during the switching event, the switching reliability of GaN transistor depends on the switching locus. Accordingly a concept of Switching Safe Operating Area (SSOA) is proposed to define the switching conditions wherein the device ca作者: 正常 時間: 2025-3-25 12:43
M. Albert Vannicelity of MOCVD to achieve the high throughput Ga.O. epitaxial layer growth needed for high voltage power device and deep ultraviolet solar-blind photodetector commercial applications. This chapter discusses the following topics: the selection of suitable metalorganic precursors and oxygen sources use作者: 粗語 時間: 2025-3-25 17:38
M. Albert Vannice/or low growth temperatures are necessary for a stoichiometric transfer of the target composition to the epilayer which is explained by the desorption of gallium suboxides occurring otherwise. Further, we resume solubility limits and the dependence of structural, optical and vibrational properties o作者: 1FAWN 時間: 2025-3-25 20:26
M. Albert Vannice/or low growth temperatures are necessary for a stoichiometric transfer of the target composition to the epilayer which is explained by the desorption of gallium suboxides occurring otherwise. Further, we resume solubility limits and the dependence of structural, optical and vibrational properties o作者: constellation 時間: 2025-3-26 03:09
lity of MOCVD to achieve the high throughput Ga.O. epitaxial layer growth needed for high voltage power device and deep ultraviolet solar-blind photodetector commercial applications. This chapter discusses the following topics: the selection of suitable metalorganic precursors and oxygen sources use作者: 新手 時間: 2025-3-26 05:24 作者: Pde5-Inhibitors 時間: 2025-3-26 09:51 作者: heart-murmur 時間: 2025-3-26 16:20
https://doi.org/10.1007/b136380Absorption; catalysis; chemical engineering; chemistry; crystal; heat transfer; materials science作者: 委屈 時間: 2025-3-26 17:46 作者: 專橫 時間: 2025-3-27 00:45
http://image.papertrans.cn/k/image/543067.jpg作者: Contort 時間: 2025-3-27 03:47 作者: 笨拙的我 時間: 2025-3-27 09:11
10樓作者: carotid-bruit 時間: 2025-3-27 11:04
10樓作者: Jocose 時間: 2025-3-27 14:18
10樓作者: 閑蕩 時間: 2025-3-27 18:35
10樓
