標(biāo)題: Titlebook: Intersubband Transitions in Quantum Wells: Physics and Devices; Sheng S. Li,Yan-Kuin Su Book 1998 Springer Science+Business Media New York [打印本頁(yè)] 作者: Coolidge 時(shí)間: 2025-3-21 19:59
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書(shū)目名稱(chēng)Intersubband Transitions in Quantum Wells: Physics and Devices影響因子(影響力)學(xué)科排名
書(shū)目名稱(chēng)Intersubband Transitions in Quantum Wells: Physics and Devices網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱(chēng)Intersubband Transitions in Quantum Wells: Physics and Devices網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
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書(shū)目名稱(chēng)Intersubband Transitions in Quantum Wells: Physics and Devices讀者反饋
書(shū)目名稱(chēng)Intersubband Transitions in Quantum Wells: Physics and Devices讀者反饋學(xué)科排名
作者: Corroborate 時(shí)間: 2025-3-21 23:27
Quantum Cascade Electroluminescence in the GaAs/AIGaAs Material Systemstem. We report the detailed characterization of the emitter structure including current-voltage, mid-infrared photocurrent and luminescence measurements. The optical output power of the LED for typical drive-current densities of 1 kA/cm. is in the ten nanowatt range.作者: 黑豹 時(shí)間: 2025-3-22 01:45 作者: GUILT 時(shí)間: 2025-3-22 08:00
https://doi.org/10.1007/978-1-4615-5759-3detection; detector; emission; infrared; laser; Modulation; physics; quantum dot; quantum wells; structures; t作者: anatomical 時(shí)間: 2025-3-22 09:49
http://image.papertrans.cn/i/image/472906.jpg作者: 兩種語(yǔ)言 時(shí)間: 2025-3-22 13:40
Jér?me Faist,Federico Capasso,Deborah L. Sivco,Albert L. Hutchinson,Sung-Nee G. Chu,Alfred Y. Cho,C.作者: Hiatal-Hernia 時(shí)間: 2025-3-22 18:44 作者: Senescent 時(shí)間: 2025-3-22 21:50
Peter Kruck,Manfred Helm,Gottfried Strasser,Lubos Hvozdara,Erich Gornik作者: 合并 時(shí)間: 2025-3-23 04:59 作者: Atrium 時(shí)間: 2025-3-23 09:22
Yoav Lavon,Amir Sa’ar,Francois H. Julien,Jean-Pierre Leburton,Richard Planel作者: 陪審團(tuán) 時(shí)間: 2025-3-23 12:39 作者: micronutrients 時(shí)間: 2025-3-23 17:42
Sumith Bandara,Sarath Gunapala,John Liu,Jason Mumolo,Edward Luong,Winn Hong,Deepak Sengupta作者: 菊花 時(shí)間: 2025-3-23 18:23 作者: 動(dòng)物 時(shí)間: 2025-3-24 00:09
Meimei Z. Tidrow,Stephen W. Kennerly,Xudong Jiang,Jung-Chi Chiang,Sheng S. Li,Victor Ryzhii作者: acclimate 時(shí)間: 2025-3-24 02:39 作者: 辭職 時(shí)間: 2025-3-24 10:19 作者: 隱藏 時(shí)間: 2025-3-24 14:45 作者: Parameter 時(shí)間: 2025-3-24 16:36 作者: hermitage 時(shí)間: 2025-3-24 21:38 作者: 萬(wàn)花筒 時(shí)間: 2025-3-25 03:01
Intersubband Transitions of Normal Incidence N-Type Direct Band Gap Quantum Well Structures(invited)er from the sample processing and testing conditions in which the normal incidence light has been directed to the in-plane direction, or due to intrinsic normal incidence absorption. Three QWIP samples with different device structures, processing procedures, and experimental conditions are examined 作者: left-ventricle 時(shí)間: 2025-3-25 03:44 作者: Granular 時(shí)間: 2025-3-25 09:15 作者: 災(zāi)禍 時(shí)間: 2025-3-25 14:54
Intersubband Transitions in Quantum Wells: Physics and Devices作者: Postulate 時(shí)間: 2025-3-25 17:20
Intersubband Transitions in Quantum Wells: Physics and Devices978-1-4615-5759-3作者: ostracize 時(shí)間: 2025-3-25 22:06
Book 1998aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulat作者: RADE 時(shí)間: 2025-3-26 02:58
ered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulat978-1-4613-7639-2978-1-4615-5759-3作者: Obsessed 時(shí)間: 2025-3-26 06:26
M. Ershovechnung unterworfen werden k?nnen. Nichts desto weniger hat das Wort ?Zufall“ seine wohl berechtigte Bedeutung. Ist n?mlich das Wirken der Ursachen eines Ereignisses unbekannt, so ist der Eintritt desselben zwar noch ein durch seine Ursachen v?llig bestimmter, aber für uns doch ein g?nzlich ungewiss作者: DECRY 時(shí)間: 2025-3-26 11:03
Peter Kruck,Manfred Helm,Günther Bauer,Joachim F. Nützel,Gerhard Abstreiterisse (z. B. Lebensdauer oder T?tigkeit von Menschen oder Maschinen, Verhalten von Molekülen) herangezogen wird, insbesondere dann, wenn andere Beschreibungsversuche gescheitert sind (etwa dadurch, da? ihre Verwendung zur Vorhersage zu kompliziert oder teuer wird).作者: Altitude 時(shí)間: 2025-3-26 15:22
A. G. U. Perera,W. Z. Shen,S. G. Matsik,H. C. Liu,M. Buchanan,W. J. Schaffisse (z. B. Lebensdauer oder T?tigkeit von Menschen oder Maschinen, Verhalten von Molekülen) herangezogen wird, insbesondere dann, wenn andere Beschreibungsversuche gescheitert sind (etwa dadurch, da? ihre Verwendung zur Vorhersage zu kompliziert oder teuer wird).作者: Wordlist 時(shí)間: 2025-3-26 20:32
Intersubband Electroluminescence from GaAs/AIGaAs Triple Barrier and Quantum Cascade Structuresade structures, a 100? Al.Ga.As/Al.Ga.As quantum well is employed to bridge the individual active regions to enhance the overall quantum efficiency, thus greatly simplifying the design and growth of quantum cascade structures.作者: objection 時(shí)間: 2025-3-27 00:06
QWIP Performance and Polarization Selection Ruler conduction band intersubband transitions. We employ a device structure and a light coupling geometry where the parasitic light scattering is negligible. The experiments imply that the selection rule is followed to an accuracy of 0.2% for a 8.1 μm QWIP with GaAs wells; while this degrades to 3% for a 4.6 μm QWIP with In.Ga.As wells.作者: 壓艙物 時(shí)間: 2025-3-27 02:02 作者: interior 時(shí)間: 2025-3-27 08:52
Short (λ～3.4μM) and Long (λ～11.5μM) Wavelength Room Temperature Quantum Cascade Lasers. We show in this paper that high temperature operation (T=320K) of quantum cascade lasers can be extended to wavelengths down to 11.5μm with high performances. Peak pulsed optical power of 60mW is obtained at 300K with a high T.=172K, in good agreement with our theoretical model.作者: 方便 時(shí)間: 2025-3-27 11:44 作者: SPALL 時(shí)間: 2025-3-27 15:05 作者: CHART 時(shí)間: 2025-3-27 17:50 作者: 溫和女人 時(shí)間: 2025-3-27 22:11 作者: 檔案 時(shí)間: 2025-3-28 05:50 作者: 漫步 時(shí)間: 2025-3-28 09:48 作者: hypnogram 時(shí)間: 2025-3-28 11:56
Corrugated Quantum Well Infrared Photodetectors and Transistorshe readout noise is excluded. Furthermore, we have shown that . . can be further increased by fabrication of the C-QWIP into the corrugated hot-electron transistor structure. The enhanced performance of the corrugated structure, combined with its simple processing steps, greatly improves the QWIP technology.作者: AROMA 時(shí)間: 2025-3-28 16:38
Electric Field Distribution and Low Power Nonlinear Photo-Response of Quantum Well Infrared Photodetfield. It is shown that the above field distribution is responsible to the low power nonlinear photo-response of the QWIP. A comparison of our model with intensity dependent responsivity measurements showed a very good agreement as long as the QWIP is far from saturation.作者: 新娘 時(shí)間: 2025-3-28 22:03
Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaA the model results, optimized photodetector structures are grown via molecular-beam epitaxy (MBE) and their photoresponse measured. Good experimentaltheoretical agreement is obtained regarding the long-wavelength threshold and absorption shape.作者: 葡萄糖 時(shí)間: 2025-3-28 23:47 作者: 過(guò)份艷麗 時(shí)間: 2025-3-29 05:37 作者: 設(shè)想 時(shí)間: 2025-3-29 08:13
Peter Kruck,Manfred Helm,Günther Bauer,Joachim F. Nützel,Gerhard Abstreiterndelt sich dabei um Beschreibung von Versuchen mit Würfeln und Rouletten, die man oft zu wiederholen pflegt ; Ergebnisse von vielen solchen Einzelexperimenten, wie z. B. die Anzahl der Würfelwürfe bis zum Erreichen einer gro?en Augensumme oder die relative H?ufigkeit von 6–6-Folgen lassen sich nach 作者: Lymphocyte 時(shí)間: 2025-3-29 11:42
A. G. U. Perera,W. Z. Shen,S. G. Matsik,H. C. Liu,M. Buchanan,W. J. Schaffndelt sich dabei um Beschreibung von Versuchen mit Würfeln und Rouletten, die man oft zu wiederholen pflegt ; Ergebnisse von vielen solchen Einzelexperimenten, wie z. B. die Anzahl der Würfelwürfe bis zum Erreichen einer gro?en Augensumme oder die relative H?ufigkeit von 6–6-Folgen lassen sich nach 作者: 不溶解 時(shí)間: 2025-3-29 15:51
Short (λ～3.4μM) and Long (λ～11.5μM) Wavelength Room Temperature Quantum Cascade Lasersperation of these lasers up to T=280K is reported with a high T.. Continuous wave powers as high as 120mW are reported at cryogenic temperatures (15K). We show in this paper that high temperature operation (T=320K) of quantum cascade lasers can be extended to wavelengths down to 11.5μm with high per作者: 現(xiàn)實(shí) 時(shí)間: 2025-3-29 21:26
Quantum Fountain Intersubband Laser at 15.5 μm Wavelength in GaAs/AlGaAs Quantum Wells. is based on optical pumping of a three-bound-state coupled quantum well structure in the GaAs/AlGaAs material system. The lasing transition occurs between the two excited states. Population inversion is achieved by benefiting from a LO-phonon resonance between the two lower subbands. The optical pu作者: 使乳化 時(shí)間: 2025-3-30 01:26
Quantum Cascade Electroluminescence in the GaAs/AIGaAs Material Systemstem. We report the detailed characterization of the emitter structure including current-voltage, mid-infrared photocurrent and luminescence measurements. The optical output power of the LED for typical drive-current densities of 1 kA/cm. is in the ten nanowatt range.作者: abnegate 時(shí)間: 2025-3-30 04:32 作者: 實(shí)現(xiàn) 時(shí)間: 2025-3-30 11:18 作者: Affirm 時(shí)間: 2025-3-30 16:20
Intersubband Electroluminescence from GaAs/AIGaAs Triple Barrier and Quantum Cascade Structuresfrom GaAs/AlGaAs-based quantum cascade structures. Intersubband emission (λ≈8.5μm) with a full width at half maximum of 7meV, was observed from a GaAs/AlGaAs triple barrier structure with quantum well widths of 66? and 33?. The emission was coupled out of the sample by a metallic grating with a peri作者: limber 時(shí)間: 2025-3-30 19:07
Quantum Well Infrared Photodetectors: Device Physics and Light Couplingtron across the bandgap (Eg) from the valence band to the conduction. These photo-electrons can be collected efficiently, thereby producing a photocurrent in the external circuit. Since the incoming photon has to promote an electron from the valence band to the conduction band, the energy of the pho作者: intimate 時(shí)間: 2025-3-31 00:22
QWIP Performance and Polarization Selection Rulemine the performance of QWIP, and point to the direction for future work to improve the performance. Analytical expressions for detectivity and background limited operating temperature are given. This enables a easy identification of key parameters and their relations to the performance characterist作者: JOG 時(shí)間: 2025-3-31 02:19
Electric Field Distribution and Low Power Nonlinear Photo-Response of Quantum Well Infrared Photodet accumulation of space charges in the quantum wells is the origin of the inhomogeneous electric field distribution across the QWIP. Under steady state conditions the QWIP can be divided into a high field region of the first few quantum wells near the emitter and an asymptotic region with a constant 作者: 草率女 時(shí)間: 2025-3-31 08:21
Intersubband Transitions of Normal Incidence N-Type Direct Band Gap Quantum Well Structures(invited)t very useful in quantum well infrared photodetectors (QWIPs). On the other hand, normal incidence absorption is allowed in both p-type QWIPs and indirect bandgap n-QWIPs. However, the low electron effective mass and high electron mobility in the Г valley of the conduction band made n-type QWIPs mor作者: glisten 時(shí)間: 2025-3-31 11:33
Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaA and InAs/InGaSb superlattice (SL) infrared (IR) detector structures. The electronic structure and the optical absorption of these structures are calculated as a function of their structural and material parameters using a newly developed 8x8 envelope-function approximation (EFA) formalism. Based on作者: 結(jié)構(gòu) 時(shí)間: 2025-3-31 13:46
Optical Response Induced by Intersubband Transitions in Quantum Wells: The Role of Multiple Reflectiction (.) [7]. Therefore, the total internal reflection geometry is very often used to enhance the coupling of the infrared radiation with intersubband excitations in the single quantum well (SQW) [2] and multiple quantum well (MQW) [7] structures. Practically, in all papers using this coupling tech作者: 易受騙 時(shí)間: 2025-3-31 18:00 作者: acrobat 時(shí)間: 2025-4-1 01:18
Lateral Physical Effects in Quantum Well Infrared Photodetectorser detector area are considered. These effects are due to the in-plane transport of the photoinduced charge in the QW and resulting broad injection from the emitter. Characteristic length of the lateral photocurrent spreading can be as large as 10.–10. μm. Analytical expressions for SQWIP responsivi作者: Presbyopia 時(shí)間: 2025-4-1 03:50 作者: 漂泊 時(shí)間: 2025-4-1 09:06
Normal Incident Two Color Voltage Tunable InGaAs Quantum Well Infrared Photodetectorsn demonstrated. Two different structures were used for different voltage tuning characteristics. The In.Ga.As/Al.Ga.As quantum wells with 3.5.0. cm. Si doping were used to fabricated MWIR QWIP with bound to bound transition and bound to continuum transition. In.Ga.As/GaAs quantum wells with 1.0. cm.作者: 人造 時(shí)間: 2025-4-1 11:36 作者: PTCA635 時(shí)間: 2025-4-1 16:44 作者: 寬容 時(shí)間: 2025-4-1 21:11
Far-Infrared (λ,=28.6 μm) GaAs/AlGaAs Quantum Well Photodetectors transitions. The responsivity is comparable to that of mid-infrared GaAs/AlGaAs and In GaAs/GaAs QWIPs. A responsivity of 0.265 A/W and detectivity of 2.5 x 10. cm. at the peak wavelength of 26.9 μm at 4.2K have been achieved. Based on the temperature dependent dark current and response results, it
