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標(biāo)題: Titlebook: Inside NAND Flash Memories; Rino Micheloni,Luca Crippa,Alessia Marelli Book 2010 Springer Science+Business Media B.V. 2010 Electronic Devi [打印本頁]

作者: 嬉戲    時間: 2025-3-21 17:16
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作者: Scintigraphy    時間: 2025-3-21 20:39

作者: 含糊    時間: 2025-3-22 03:27

作者: BIPED    時間: 2025-3-22 07:29
Christoph Friederiched Oslo B?rs i sentrum,” created by Karl H?gberg in 1950, captures a vibrant scene depicting trade and commerce in Oslo. At the heart of the painting, amidst the bustling activities, is a young boy carrying a parrot, serving as a singular representation of an exilic body within the city hall. The pa
作者: SUE    時間: 2025-3-22 09:59
C. Zambelli,A. Chimenton,P. Olivo unsatisfied stakeholders, neglected citizen groups, or completely ignored voices. What does it mean to?find, listen, and respond to those concerned by the alteration of built environments? Here, in this paper, citizen participation, its ideological and political intentions, as well as its formal in
作者: HARD    時間: 2025-3-22 14:02
Alessandro Grossiescape their predicament, the women, in search of safety and security, escape to facilities designed to shelter and protect them. Unfortunately, there are an increasing number of women’s shelters worldwide that are crowded, involve communal living, offer little or no privacy, and include restriction
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作者: Canvas    時間: 2025-3-23 09:26
Program and erase of NAND memory arrays,rt memory cell for this purpose in NAND Flash is the 1T floating gate memory cell, which is based on a MOSFET. In contrast to the 1T1C DRAM cell, which consists of an access transistor and a separate capacitance as charge storage node, the 1T floating gate cell is a MOSFET whose gate dielectric is s
作者: Congruous    時間: 2025-3-23 12:44
Charge trap NAND technologies,oating gate (FG) NAND. In fact even if FG NAND is the dominant technology and there is no advice of reduction in scaling pace, several physical roadblocks seem to limit future scalability (e.g. electrostatic interference among adjacent cells). Charge trap (CT) memories may overcome some of these lim
作者: 無法解釋    時間: 2025-3-23 15:05
NAND DDR interface,ties, makes up the choice in favor of NAND Flash on board of applications traditionally linked to other types of memories (such as EEPROM and NOR) or technologies (such as Hard Disk Drives). Mobile devices, PDA, PC, camcorders, set top boxes, servers, routers, enterprise storage and many more new ap
作者: Frequency-Range    時間: 2025-3-23 18:30

作者: 前面    時間: 2025-3-24 00:52
MLC storage, as much; on the other hand, the area of the periphery circuits, both analog and digital, increases. This is mainly due to the fact that the multilevel approach requires higher voltages for program (and therefore bigger charge pumps), higher precision and better performance in the generation of both
作者: 精美食品    時間: 2025-3-24 02:21

作者: 水土    時間: 2025-3-24 07:14
High voltage overview,r . of electrons inside the floating gate, these operations involve high electric fields (i.e. high voltages) to exploit the Fowler-Nordheim phenomena (Chap. 3 and change .. Particular attention must be taken when dealing with high voltages, since a little variation could have dramatic consequences.
作者: 遵循的規(guī)范    時間: 2025-3-24 11:02
Error correction codes,deals with error correction codes applied to NAND Flash memories. In fact, when the memory is placed in its final application, different reasons for errors (see Chap. 4) can damage the written information so that it could happen that the read message is not equal to the original anymore [1].
作者: fibula    時間: 2025-3-24 18:27
Flash cards,mon characteristics. In this chapter, we will describe memory cards from a user standpoint, their internal architecture and the algorithms operating within, the difficulties with relevant counter-stratagems inherent in their design.
作者: 種子    時間: 2025-3-24 19:08
Radiation effects on NAND Flash memories,rays with the outer layers of the atmosphere. The neutron flux changes with altitude, reaching a peak very close to the cruise altitude of airplanes, posing an even more serious threat to avionics. In addition, inevitable radioactive contaminants in the chip materials emit alpha particles, which may
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作者: atopic-rhinitis    時間: 2025-3-25 06:29
Gregory Wong. In addition, our TSV relocation results in 9% maximum temperature reduction at no additional area cost. We also provide extensive experimental results including (i) the wirelength and delay distribution of various types of 3D interconnects, (ii) the impact of TSV RC parasitics on routing and TSV r
作者: Bone-Scan    時間: 2025-3-25 08:32
R. Micheloni,A. Marelli,S. Commodaro. To solve this problem effectively, we study two TSV assignment algorithms, compare them with other TSV assignment algorithms, and analyze the impact of the quality of TSV assignment algorithms on 3D ICs. Experimental results show that the wirelength of 3D ICs is shorter than that of 2D ICs by up t
作者: HEPA-filter    時間: 2025-3-25 13:23
Christoph Friederiching and implications of the boy’s presence within the larger narrative of Oslo’s history and its public consciousness. Furthermore, the paper challenges conventional categorizations and seeks to reframe the discourse around exilic bodies, emphasizing the need for recognition and acknowledgment in sh
作者: induct    時間: 2025-3-25 18:46

作者: 公社    時間: 2025-3-25 23:07
Alessandro Grossigenda, this research will explore novel strategies and innovations that can be applied in order to design a space that inspires feelings of security, inclusivity, and comfort, which these women are in desperate need of. This study seeks to understand how architecture can help these women heal and st
作者: 新字    時間: 2025-3-26 03:47
A. Marelli,R. Micheloni,R. Ravasioing and implications of the boy’s presence within the larger narrative of Oslo’s history and its public consciousness. Furthermore, the paper challenges conventional categorizations and seeks to reframe the discourse around exilic bodies, emphasizing the need for recognition and acknowledgment in sh
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作者: 一致性    時間: 2025-3-27 01:36
Redundancy,Redundancy is part of the NAND circuits which take care of its reliability. In addition to redundancy, modern NAND Flash use error correction codes to improve device reliability.
作者: pancreas    時間: 2025-3-27 09:19

作者: 含糊其辭    時間: 2025-3-27 12:15
XLC storage,The obvious advantage of designing NAND devices capable of storing .-bit/cell (where . is currently 2, 3, and 4) is the resulting reduction in area occupation of the matrix. However, the benefits of 3-bit/cell (or 8-Level-Cell, 8LC) and 4-bit/cell (or 16-Level-Cell, 16LC) technologies don’t come for free.
作者: inconceivable    時間: 2025-3-27 16:03
Low power 3D-integrated SSD,With highly scaled 40 or 30 nm technologies, the memory capacity increases to as much as 32 Gbit as shown in Fig. 18.1. By using gigabit-capacity NAND flash memories, SSD, Solid-State Drive that uses NAND as a mass storage of personal computers and enterprise servers is expected as a next killer application of NAND Flash memories.
作者: 老人病學(xué)    時間: 2025-3-27 19:38

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作者: 手銬    時間: 2025-3-28 11:44

作者: neurologist    時間: 2025-3-28 16:17

作者: 斜    時間: 2025-3-28 19:52
Error correction codes,deals with error correction codes applied to NAND Flash memories. In fact, when the memory is placed in its final application, different reasons for errors (see Chap. 4) can damage the written information so that it could happen that the read message is not equal to the original anymore [1].
作者: Assault    時間: 2025-3-29 02:34
Flash cards,mon characteristics. In this chapter, we will describe memory cards from a user standpoint, their internal architecture and the algorithms operating within, the difficulties with relevant counter-stratagems inherent in their design.
作者: Indurate    時間: 2025-3-29 07:01
https://doi.org/10.1007/978-90-481-9431-5Electronic Devices; Flash Memories; NAND Memories; Solid State Circuits; integrated circuit; single-elect
作者: excrete    時間: 2025-3-29 09:49
Book 2010rvade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera…), disks or even magnetic tapes would be used to record a video or to listen a song, and
作者: 在前面    時間: 2025-3-29 12:37
Charge trap NAND technologies,r as storage element, in CT case electrons are trapped inside a dielectric layer. The different storage material change drastically cell architecture impacting also on physical mechanisms for write operations (both program and erase) and reliability.
作者: 親愛    時間: 2025-3-29 18:00

作者: Synapse    時間: 2025-3-29 22:29

作者: BARK    時間: 2025-3-30 01:58
Radiation effects on NAND Flash memories,zed by a significant presence of ionizing radiation, in the form of protons, electrons, and heavy-ions coming from various sources. Ionizing radiation can cause either permanent or temporary damage to electronic chips, generating a plethora of effects, from flipping an SRAM memory bit from 1 to 0 or vice versa, to burning-out a power MOSFET.
作者: 著名    時間: 2025-3-30 05:52

作者: sorbitol    時間: 2025-3-30 10:26

作者: 同義聯(lián)想法    時間: 2025-3-30 16:01

作者: inquisitive    時間: 2025-3-30 19:38
MLC storage,l approach requires higher voltages for program (and therefore bigger charge pumps), higher precision and better performance in the generation of both the analog signals and the timings, and an increase in the complexity of the algorithms.
作者: GREEN    時間: 2025-3-31 00:00
Neomycin Reduces the Intestinal Production of Ammonia from Glutamine,n neomycin for 3 days and then fasted for 24 hours to eliminate feces. Neomycin decreased arteriovenous differences of ammonia across the intestine even when the intestines were empty. Neomycin treatment lowered the activity of glutaminase in the intestinal mucosa and the rate of ammonia production
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作者: 壓碎    時間: 2025-3-31 20:34
Divestitures plan does not necessarily mean the IP is worthless. Rather than ignore the underutilized IP, the company could monetize the asset through divestiture, removing the IP from the portfolio and converting the asset into cash.
作者: Mortar    時間: 2025-3-31 22:06
The Plenum Series in Crime and Justicets argue that changes in the distribution of power that are triggered by a rising power have significant implications for the overall stability of the international system. For most realists, rapidly growing states are inherently threatening. Their deep concern about rising powers should not be surp
作者: mighty    時間: 2025-4-1 01:57
Illya Chaikovsky,Mykhailo Bocharov,Vasyl Stasiuk,Tetyana Ryzhenko,Iurii Frolov,Sofia Parovska,Anton Sharypanov,Vladyslav Malanin,Vasyl Osyodlot, non-local quantum measurements, and, potentially, quantum computation. They are also on the verge of yielding new, high performance optical devices for large-scale industries such as telecommunications and display technology.978-3-662-14228-8978-3-540-48313-7Series ISSN 0075-8450 Series E-ISSN 1616-6361
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Energiemanagement: Das Bosch Engagement für eine nachhaltige Sicherung der Energieversorgungen in Wohngeb?uden erm?glicht eine Verbesserung der Netzdienlichkeit. Die Optimierung des Betriebs wird dabei durch eine aktive Steuerung der (teil-) flexiblen Lasten wie W?rmepumpen oder Elektrofahrzeugen und die Einbindung von elektrischen Kleinspeichern erreicht.
作者: fructose    時間: 2025-4-1 13:48
2363-5096 leable features, are presented in this book. Advanced functional materials for sensing have much wider applications and have an enormous impact on our environment.978-981-99-6016-3978-981-99-6014-9Series ISSN 2363-5096 Series E-ISSN 2363-510X
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K. Martin recognition and time series prediction, which are basically papers using nature-inspired techniques, like evolutionary algorithms, fuzzy logic and neural networks, for achieving efficient pattern recognition or time series prediction. The third part contains papers with the theme of bio-inspired a
作者: 占線    時間: 2025-4-1 23:29





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