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標(biāo)題: Titlebook: III-Nitride LEDs; From UV to Green Shengjun Zhou,Sheng Liu Book 2022 Science Press 2022 III-Nitride semiconductors.Light extraction efficie [打印本頁]

作者: coerce    時間: 2025-3-21 16:43
書目名稱III-Nitride LEDs影響因子(影響力)




書目名稱III-Nitride LEDs影響因子(影響力)學(xué)科排名




書目名稱III-Nitride LEDs網(wǎng)絡(luò)公開度




書目名稱III-Nitride LEDs網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱III-Nitride LEDs被引頻次




書目名稱III-Nitride LEDs被引頻次學(xué)科排名




書目名稱III-Nitride LEDs年度引用




書目名稱III-Nitride LEDs年度引用學(xué)科排名




書目名稱III-Nitride LEDs讀者反饋




書目名稱III-Nitride LEDs讀者反饋學(xué)科排名





作者: Libido    時間: 2025-3-21 21:18

作者: 寬度    時間: 2025-3-22 02:48

作者: Infelicity    時間: 2025-3-22 06:12
Shengjun Zhou,Sheng Liu reduce oravoid them is stated. The book also aims to aid in the overall educational need for young doctors as well as established primary care physicians by highlighting the available tools and the importance 978-0-85729-230-8
作者: Phenothiazines    時間: 2025-3-22 09:12
Shengjun Zhou,Sheng Liu reduce oravoid them is stated. The book also aims to aid in the overall educational need for young doctors as well as established primary care physicians by highlighting the available tools and the importance 978-0-85729-230-8
作者: hardheaded    時間: 2025-3-22 15:05
Shengjun Zhou,Sheng Liu reduce oravoid them is stated. The book also aims to aid in the overall educational need for young doctors as well as established primary care physicians by highlighting the available tools and the importance 978-0-85729-230-8
作者: 杠桿    時間: 2025-3-22 20:12

作者: GOAD    時間: 2025-3-22 21:59

作者: Anticoagulants    時間: 2025-3-23 04:00

作者: 缺陷    時間: 2025-3-23 07:49

作者: 的’    時間: 2025-3-23 12:41

作者: 粗糙    時間: 2025-3-23 13:51

作者: Infuriate    時間: 2025-3-23 21:40
High-Efficiency Top-Emitting III-Nitride LEDs,er that, we introduce back reflector and low optical loss electrodes to decrease light loss and improve light extraction efficiency. At the last section, we introduce a type of Ni/Au wire grids transparent conductive layer.
作者: 健忘癥    時間: 2025-3-24 00:47
https://doi.org/10.1007/978-981-19-0436-3III-Nitride semiconductors; Light extraction efficiency; Internal quantum efficiency; External quantum
作者: perimenopause    時間: 2025-3-24 04:23

作者: 墊子    時間: 2025-3-24 07:21
Epitaxial Growth of III-Nitride LEDs,ed. Secondly, InGaN/GaN superlattice and stacked GaN/AlN last quantum barrier to improve the performance of green LED are introduced. Finally, several strategies to improve the performance of ultraviolet LED are discussed in detail.
作者: 心痛    時間: 2025-3-24 11:50

作者: 嘲笑    時間: 2025-3-24 16:33
Device Reliability and Measurement, the mechanism of forward leakage current and reverse leakage current is analyzed. Thirdly, the method to improve luster consistency is proposed. Finally, transient measurement methods of photometric parameters, colorimetric parameters, and electrical parameters of LEDs are discussed.
作者: 颶風(fēng)    時間: 2025-3-24 20:41

作者: 省略    時間: 2025-3-25 02:30
Shengjun Zhou,Sheng LiuPresents the state-of-the-art research on III-nitrides-based LEDs.Covers the physical background, the epitaxial growth and device fabrication of III-nitrides-based LEDs.A valuable source of reference
作者: acrobat    時間: 2025-3-25 06:52
Advances in Optics and Optoelectronicshttp://image.papertrans.cn/i/image/460282.jpg
作者: pessimism    時間: 2025-3-25 09:24
references in order to find relevant facts.Highlights the lCancer Pain provides a comprehensive, practical guide to the management of pain in cancer patients. Beginning with a discussion of current issues in the control of cancer pain, the initial chapters provide a clear, concise explanation of ca
作者: 壯觀的游行    時間: 2025-3-25 12:39

作者: 關(guān)節(jié)炎    時間: 2025-3-25 19:16

作者: Chandelier    時間: 2025-3-25 23:27

作者: 游行    時間: 2025-3-26 01:37

作者: cogent    時間: 2025-3-26 08:22
Shengjun Zhou,Sheng Liu references in order to find relevant facts.Highlights the lCancer Pain provides a comprehensive, practical guide to the management of pain in cancer patients. Beginning with a discussion of current issues in the control of cancer pain, the initial chapters provide a clear, concise explanation of ca
作者: airborne    時間: 2025-3-26 11:42

作者: obstinate    時間: 2025-3-26 15:22
Epitaxial Growth of III-Nitride LEDs,ed. Secondly, InGaN/GaN superlattice and stacked GaN/AlN last quantum barrier to improve the performance of green LED are introduced. Finally, several strategies to improve the performance of ultraviolet LED are discussed in detail.
作者: Cholagogue    時間: 2025-3-26 17:27

作者: Kaleidoscope    時間: 2025-3-26 23:07
Flip-Chip III-Nitride LEDs,low-resistance p-type ohmic contacts were utilized to improve current spreading and light extraction efficiency of flip-chip LEDs. Moreover, several strategies, such as prism-structured sidewall and micro-structures on PSS, were proposed to enhance the light extraction efficiency of flip-chip mini/m
作者: onlooker    時間: 2025-3-27 02:05
High Voltage and Vertical LEDs,d alternating current high voltage LED are introduced. Meanwhile,?the performance?comparison ofdirect current high voltage?LED andalternating current high voltage?LED is demonstrated. Secondly, the fabrication process of vertical LEDs on Si substrate is shown, which includes laser lift-off, wafer bo
作者: 瑣事    時間: 2025-3-27 08:04
Device Reliability and Measurement, the mechanism of forward leakage current and reverse leakage current is analyzed. Thirdly, the method to improve luster consistency is proposed. Finally, transient measurement methods of photometric parameters, colorimetric parameters, and electrical parameters of LEDs are discussed.
作者: canvass    時間: 2025-3-27 13:11

作者: 一美元    時間: 2025-3-27 16:38
Magdalena Musia?-Karg,óscar G. LuengoPresents studies related to various aspects of digitalization of democratic and communication processes.Based on up-to-date evidence from different countries.Examines challenges posted by the rapid de
作者: 赦免    時間: 2025-3-27 21:07

作者: charisma    時間: 2025-3-27 21:55
2197-9529 more technologically oriented applications treated?is the testing of the flight characteristics of aeroballistic models and the assessment of impacts in the aerospace industry..978-3-642-06167-7978-3-540-27168-0Series ISSN 2197-9529 Series E-ISSN 2197-9537




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