標題: Titlebook: Hydrogen in Crystalline Semiconductors; Stephen J. Pearton,James W. Corbett,Michael Stavol Book 1992 Springer-Verlag Berlin Heidelberg 199 [打印本頁] 作者: 快樂 時間: 2025-3-21 17:13
書目名稱Hydrogen in Crystalline Semiconductors影響因子(影響力)
書目名稱Hydrogen in Crystalline Semiconductors影響因子(影響力)學科排名
書目名稱Hydrogen in Crystalline Semiconductors網絡公開度
書目名稱Hydrogen in Crystalline Semiconductors網絡公開度學科排名
書目名稱Hydrogen in Crystalline Semiconductors被引頻次
書目名稱Hydrogen in Crystalline Semiconductors被引頻次學科排名
書目名稱Hydrogen in Crystalline Semiconductors年度引用
書目名稱Hydrogen in Crystalline Semiconductors年度引用學科排名
書目名稱Hydrogen in Crystalline Semiconductors讀者反饋
書目名稱Hydrogen in Crystalline Semiconductors讀者反饋學科排名
作者: 休息 時間: 2025-3-22 00:04 作者: 憤憤不平 時間: 2025-3-22 00:47 作者: convert 時間: 2025-3-22 07:08
The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors,ved from infrared-absorption data. At present, there is only one theoretical study of impurity-H complexes [6.4]. In this chapter, recent work on the IR absorption, configurations, and H motions for hydrogen-impurity complexes will be surveyed.作者: Excise 時間: 2025-3-22 10:00
Diffusion of Hydrogen in Semiconductors,e, and the method of hydrogen insertion. For example, hydrogen appears to diffuse more rapidly under conditions of low hydrogen concentration such as acid etching or boiling in water, than it does under conditions of high hydrogen concentration. The most obvious example of the latter is during exposure to a hydrogen plasma.作者: 小歌劇 時間: 2025-3-22 16:07
Introduction,od of the middle and late nineteen eighties saw a tremendous amount of work performed on the properties of hydrogen in crystalline semiconductors such as Si, GaAs and related materials. It was soon established that atomic hydrogen passivates the electrical activity of both shallow acceptor and donor作者: Germinate 時間: 2025-3-22 20:02 作者: scrape 時間: 2025-3-22 21:12 作者: ear-canal 時間: 2025-3-23 04:26
Shallow Impurity Passivation by Atomic Hydrogen,oth acceptors [4.1,2] and donors in Si, GaAs, GaP and AlGaAs, and has been observed for acceptors in Ge, CdTe, ZnTe and InP. It is likely therefore that this is a general effect, but it may be difficult to observe experimentally in some materials because of the unstable nature of the hydrogen-impuri作者: 冬眠 時間: 2025-3-23 09:29
Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy, impurities are, in most cases, not electrically active or paramagnetic. InfraRed (IR) absorption and Raman spectroscopy, however, have been especially effective for characterizing hydrogen related defects [5.1,2]. The vibration of the light H in complexes occurs at frequencies well above intrinsic 作者: ethereal 時間: 2025-3-23 10:14
The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors, simply more possible sites for impurities and more configurations that are possible for complex defects. Vibrational spectroscopy is well suited to the determination of the microscopic characteristics of H impurity complexes in the m-V semiconductors [6.1-3] just as it is in Si. Uniaxial stress tec作者: 切碎 時間: 2025-3-23 17:28 作者: nutrients 時間: 2025-3-23 21:31
Diffusion of Hydrogen in Semiconductors,in p-type material and H. or H. in n-type material) and also that hydrogen can apparently be present in a number of different forms, namely atomic, molecular or bound to a defect or impurity. Since the probability of formation of these different forms is dependent on the defect or impurity concentra作者: REP 時間: 2025-3-24 00:52 作者: aspect 時間: 2025-3-24 04:08 作者: filial 時間: 2025-3-24 07:59
Hydrogen and the Mechanical Properties of Semiconductors,f this work has involved the study of hydrogen embrittlement of metals [12.1,2], similar phenomena can occur in crystalline semiconductors. In this chapter we discuss some of these embrittlement effect and the defects which may be the cause of such problems.作者: 冷漠 時間: 2025-3-24 11:14
computer problems to enable learning by doing.Contains over.This self-contained textbook covers fundamental aspects of sequence analysis with special emphasis on evolutionary biology, including sequence alignment, exact matching, phylogeny reconstruction, and coalescent simulation. It addresses the作者: 沒有貧窮 時間: 2025-3-24 18:27 作者: ABIDE 時間: 2025-3-24 20:41 作者: 解凍 時間: 2025-3-25 03:11 作者: BILL 時間: 2025-3-25 07:10
Hydrogen-Related Defects in Semiconductors,In this chapter we will detail the various hydrogen-related defects observed in Si, Ge and m-V semiconductors grown in a H. ambient or implanted with protons. There are a wide variety of hydrogen-related centers in these materials, most of which appear to be complexes of hydrogen with other impurities or with native defects.作者: Bereavement 時間: 2025-3-25 09:51 作者: 樂器演奏者 時間: 2025-3-25 12:11 作者: 打擊 時間: 2025-3-25 18:43
978-3-540-55491-2Springer-Verlag Berlin Heidelberg 1992作者: Nibble 時間: 2025-3-25 22:35 作者: enhance 時間: 2025-3-26 00:36 作者: 堅毅 時間: 2025-3-26 05:15 作者: 痛恨 時間: 2025-3-26 10:06
Stephen J. Pearton Ph. D.,James W. Corbett Ph. D.,Michael Stavola Ph. D.作者: carbohydrate 時間: 2025-3-26 16:29 作者: Leaven 時間: 2025-3-26 19:06
Stephen J. Pearton Ph. D.,James W. Corbett Ph. D.,Michael Stavola Ph. D.作者: 安撫 時間: 2025-3-26 21:09
Stephen J. Pearton Ph. D.,James W. Corbett Ph. D.,Michael Stavola Ph. D.作者: ARBOR 時間: 2025-3-27 04:27
Stephen J. Pearton Ph. D.,James W. Corbett Ph. D.,Michael Stavola Ph. D.作者: 費解 時間: 2025-3-27 06:00 作者: Reverie 時間: 2025-3-27 11:31
Stephen J. Pearton Ph. D.,James W. Corbett Ph. D.,Michael Stavola Ph. D.作者: AFFIX 時間: 2025-3-27 17:01
Stephen J. Pearton Ph. D.,James W. Corbett Ph. D.,Michael Stavola Ph. D.作者: LEER 時間: 2025-3-27 20:33 作者: LAITY 時間: 2025-3-27 21:55 作者: 舊病復發(fā) 時間: 2025-3-28 04:15 作者: 河潭 時間: 2025-3-28 06:57 作者: JOG 時間: 2025-3-28 11:52
Hydrogen Incorporation in Crystalline Semiconductors,ll technology over the past two decades are due, in no small part, to the use of hydrogen passivation techniques [2.3]. The net effect of hydrogen incorporation in disordered semiconductors is to make them more like their ordered counterparts. That is, the luminescent efficiency of amorphous or poly作者: Hemiplegia 時間: 2025-3-28 16:18
Passivation of Deep Levels by Hydrogen,n in the material, r. is the effective lifetime of carriers in the depletion region, W is the depletion depth, and A is the area of the contact on the diode. The presence of deep levels can substantially reduce the minority carrier lifetime, leading to an increase in I.. A tremendous amount of effor作者: FADE 時間: 2025-3-28 19:54
ded, making the book ideal for self-study. Problems are grouped into sections headed by an introduction and a list of new terms. By using practical computingto explore sequence data in an evolutionary context, the book enables readers to tackle their own computational problems..978-3-031-20416-6978-3-031-20414-2作者: 有其法作用 時間: 2025-3-29 01:50
Stephen J. Pearton,James W. Corbett,Michael Stavol作者: 玉米 時間: 2025-3-29 05:53
Yujie Wang,Baoli Mang more accurate stresses at a node on the boundary of domain and applied this smoothing method to the optimization system for improving the accuracy of the stress distribution obtained by FEM..Further, the authors proposed the method of automatic mesh(Suhara and Fukuda,1972, Cavendish,1974) generat作者: RENIN 時間: 2025-3-29 07:44 作者: 知識分子 時間: 2025-3-29 13:01
Psychotomimetica,etisch wirkenden Pharmaka gibt es verschiedene Bezeichnungen. Das h?ngt damit zusammen, da? diese Pharmaka und Drogen (z.B. Pilzgifte, Kakteenextrakte, Extrakte von Blattpflanzen) in verschiedenen Kulturen seit langem bekannt sind und von jeher gro?es Interesse erregt haben.作者: 厚顏無恥 時間: 2025-3-29 19:17
https://doi.org/10.1007/978-3-662-09893-6ngen und Hürden für soziale Teilhabe durch partizipative Technikentwicklung mit informell Pflegenden. Dies flie?t in einen Vorschlag für ein Teilhabe-Partizipations-Modell zur Reflexion der übergeordneten Zusammenh?nge ein.作者: Pathogen 時間: 2025-3-29 22:06
Spirituality and Indian Psychology978-1-4419-8110-3Series ISSN 1571-5507 Series E-ISSN 2197-7984 作者: Rinne-Test 時間: 2025-3-30 01:02
