標題: Titlebook: Hot-Carrier Reliability of MOS VLSI Circuits; Yusuf Leblebici,Sung-Mo (Steve) Kang Book 1993 Springer Science+Business Media New York 1993 [打印本頁] 作者: Maudlin 時間: 2025-3-21 17:41
書目名稱Hot-Carrier Reliability of MOS VLSI Circuits影響因子(影響力)
書目名稱Hot-Carrier Reliability of MOS VLSI Circuits影響因子(影響力)學科排名
書目名稱Hot-Carrier Reliability of MOS VLSI Circuits網絡公開度
書目名稱Hot-Carrier Reliability of MOS VLSI Circuits網絡公開度學科排名
書目名稱Hot-Carrier Reliability of MOS VLSI Circuits被引頻次
書目名稱Hot-Carrier Reliability of MOS VLSI Circuits被引頻次學科排名
書目名稱Hot-Carrier Reliability of MOS VLSI Circuits年度引用
書目名稱Hot-Carrier Reliability of MOS VLSI Circuits年度引用學科排名
書目名稱Hot-Carrier Reliability of MOS VLSI Circuits讀者反饋
書目名稱Hot-Carrier Reliability of MOS VLSI Circuits讀者反饋學科排名
作者: perjury 時間: 2025-3-21 20:35
Oxide Degradation Mechanisms in MOS Transistors,he drain. The “damage” is in the form of localized oxide charge trapping and/or interface trap generation, which gradually builds up and permanently changes the oxide-interface charge distribution [1],[2]. In this chapter, the hot-carrier injection mechanisms leading to oxide damage in MOSFET device作者: Lice692 時間: 2025-3-22 01:54
Modeling of Degradation Mechanisms,ion models developed for estimating the hot-carrier induced oxide degradation will be presented. The physical degradation models include all of the significant mechanisms, i.e., electron and hole trapping, interface trap generation by electron injection and interface trap generation by hole injectio作者: amputation 時間: 2025-3-22 06:00 作者: 無孔 時間: 2025-3-22 09:29 作者: incite 時間: 2025-3-22 13:10
Fast Timing Simulation for Circuit Reliability,VLSI chips increases with shrinking design rules. The development and use of . reliability simulation tools are therefore crucial for early assessment and improvement of circuit lifetime. Various approaches for modeling and estimating the hot-carrier related degradation of MOS transistors, based on 作者: 腐蝕 時間: 2025-3-22 20:08 作者: 阻撓 時間: 2025-3-23 00:09
Circuit Design for Reliability,s chapters. The development and use of accurate reliability simulation tools were recognized as crucial measures for early assessment and improvement of circuit reliability. Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined 作者: Customary 時間: 2025-3-23 04:11
When blockchain technology and AI are coupled, fraud, identity theft, and data breaches are reduced, while financial transactions are seen as more trustworthy and legal. This abstract examines the potential synergies between blockchain technology and AI, as well as the uses, benefits, and combined 作者: 隱藏 時間: 2025-3-23 05:44 作者: 和藹 時間: 2025-3-23 13:21
Yusuf Leblebici,Sung-Mo (Steve) Kangsted various caregiving-related negative experiences might be related to older spousal caregivers’ mental health status, the components of psychological well-being (PSW) among older spousal caregivers have not been fully explored. This study examined the association between spousal caregiver status 作者: 性行為放縱者 時間: 2025-3-23 17:13 作者: Assemble 時間: 2025-3-23 21:33 作者: 刪除 時間: 2025-3-24 01:56 作者: HERE 時間: 2025-3-24 05:02 作者: Nuance 時間: 2025-3-24 07:02
Yusuf Leblebici,Sung-Mo (Steve) Kangf elder abuse, which creates new challenges in the form of the indirect and direct victimization of children in the home. However, research on the relationship between children’s witnessing of elder abuse and their victimization experiences is limited. This study examines the physical and mental hea作者: 支柱 時間: 2025-3-24 13:39
Yusuf Leblebici,Sung-Mo (Steve) Kangf elder abuse, which creates new challenges in the form of the indirect and direct victimization of children in the home. However, research on the relationship between children’s witnessing of elder abuse and their victimization experiences is limited. This study examines the physical and mental hea作者: Respond 時間: 2025-3-24 18:11
ers in debugging issues related to program correctness. The motivation is twofold. First, researchers widely use computation graphs to analyze dynamic program behavior. Second, most past work focused on visualizing performance bottlenecks rather than correctness issues. This paper’s contributions ar作者: Pruritus 時間: 2025-3-24 21:53
Oxide Degradation Mechanisms in MOS Transistors,ation of the oxide damage, the dependence of the degradation mechanisms upon various operating conditions and temperature, and the effects of the oxide damage upon device characteristics, will also be examined. Most of the following discussion is focussed on nMOS transistors, for which the hot-carri作者: 軌道 時間: 2025-3-25 00:27 作者: nullify 時間: 2025-3-25 04:08 作者: 歪曲道理 時間: 2025-3-25 07:54 作者: CRP743 時間: 2025-3-25 15:18 作者: Vulnerable 時間: 2025-3-25 16:30 作者: 不透明 時間: 2025-3-25 22:09 作者: 接觸 時間: 2025-3-26 02:15
Yusuf Leblebici,Sung-Mo (Steve) Kangtional loneliness among caregivers. . Findings underscored nuanced differences between social loneliness and emotional loneliness. Social policies that advance productive aging should recognize unintended consequences and aim to protect older adults from social and emotional loneliness. Counselling 作者: 枕墊 時間: 2025-3-26 05:38 作者: 暴發(fā)戶 時間: 2025-3-26 09:45 作者: MONY 時間: 2025-3-26 15:25
Yusuf Leblebici,Sung-Mo (Steve) Kang witnessed only one type. Children’s witnessing of elder abuse was also significantly associated with child abuse and bullying victimization. These findings offer implications for policymaking and service delivery in family-based child protection and interventions: Future interventions aimed at addr作者: 一起平行 時間: 2025-3-26 17:46 作者: amyloid 時間: 2025-3-27 01:01 作者: SLING 時間: 2025-3-27 01:22 作者: Hla461 時間: 2025-3-27 08:51 作者: Cholesterol 時間: 2025-3-27 12:07
Transistor-Level Simulation for Circuit Reliability,der to account for the influence of hot-carrier effects upon circuit-level reliability, the next step will be to extend the analytical reliability estimation models developed in the previous chapters to circuit-level applications.作者: bonnet 時間: 2025-3-27 16:25
Circuit Design for Reliability,out to improve the resistance of the devices to degradation. A number of simulation approaches for estimating hot-carrier reliability, ranging from two-dimensional device simulation, to circuit simulation, and to large-scale timing simulation, were examined in detail in Chapters 4 through 6.作者: enmesh 時間: 2025-3-27 19:18
Book 1993becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada- tion of MOS transistor char作者: ironic 時間: 2025-3-28 01:45 作者: Metastasis 時間: 2025-3-28 02:58
Fast Timing Simulation for Circuit Reliability,conventional circuit simulation, have been examined in Chapter 5. However, the detailed circuit simulation needed for determining the stress conditions of individual devices restricts the computational efficiency of reliability simulation approaches for very large-scale integrated circuits.作者: Cougar 時間: 2025-3-28 06:40 作者: accordance 時間: 2025-3-28 11:31
Modeling of Damaged Mosfets,gradation of circuit performance over time. The extent of the hot-carrier damage each transistor experiences is determined by its terminal voltage waveforms, i.e., by the operating conditions of the circuit. Consequently, the mechanism of hot-carrier induced device degradation must be examined within the context of circuit simulation.作者: 氣候 時間: 2025-3-28 16:43
https://doi.org/10.1007/978-1-4615-3250-7Leistungsfeldeffekttransistor; MOSFET; VLSI; circuit; diagnosis; field-effect transistor; metal oxide semi作者: 搖曳的微光 時間: 2025-3-28 22:45
