標(biāo)題: Titlebook: Hot Carrier Degradation in Semiconductor Devices; Tibor Grasser Book 2015 Springer International Publishing Switzerland 2015 Degradation o [打印本頁] 作者: opioid 時(shí)間: 2025-3-21 19:37
書目名稱Hot Carrier Degradation in Semiconductor Devices影響因子(影響力)
書目名稱Hot Carrier Degradation in Semiconductor Devices影響因子(影響力)學(xué)科排名
書目名稱Hot Carrier Degradation in Semiconductor Devices網(wǎng)絡(luò)公開度
書目名稱Hot Carrier Degradation in Semiconductor Devices網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Hot Carrier Degradation in Semiconductor Devices被引頻次
書目名稱Hot Carrier Degradation in Semiconductor Devices被引頻次學(xué)科排名
書目名稱Hot Carrier Degradation in Semiconductor Devices年度引用
書目名稱Hot Carrier Degradation in Semiconductor Devices年度引用學(xué)科排名
書目名稱Hot Carrier Degradation in Semiconductor Devices讀者反饋
書目名稱Hot Carrier Degradation in Semiconductor Devices讀者反饋學(xué)科排名
作者: recede 時(shí)間: 2025-3-21 22:54
From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradationus possible isotope effects provide context for a discussion of some qualitative aspects of the physics. Typical industry DC hot carrier stress models and their application to AC circuit models are described and motivated in that context.作者: 圣人 時(shí)間: 2025-3-22 03:00 作者: 會議 時(shí)間: 2025-3-22 06:46
http://image.papertrans.cn/h/image/428429.jpg作者: BIDE 時(shí)間: 2025-3-22 09:33
https://doi.org/10.1007/978-3-319-08994-2Degradation of Semiconductor Device Performance; Hot Carrier Degradation; Reliability Physics and Engi作者: GREEN 時(shí)間: 2025-3-22 16:28 作者: 構(gòu)成 時(shí)間: 2025-3-22 20:11
Jacopo Franco,Ben Kaczercal examples and guidelines, it will be of great interest to students and academics of supply chain management and procurement, as well as service supply chain managers looking for advanced strategies..978-3-031-68246-9978-3-031-68244-5作者: noxious 時(shí)間: 2025-3-23 00:01
Hot-Carrier Degradation in Decananometer CMOS Nodes: From an Energy-Driven to a Unified Current Degrs now cold-carrier (CC) damage results in a multiple-particle (MP) degradation process thermally activated under multivibration excitation of the passivated dangling bonds at the interface. Next, we finally develop a complete modeling for NMOS and PMOS devices that is transferred from DC acceleratin作者: gregarious 時(shí)間: 2025-3-23 02:25
Physics-Based Modeling of Hot-Carrier Degradationkage and the strong localization of hot-carrier damage. Our model is linked and compared with other approaches to HCD simulations. Special attention is paid to the importance of the particular model ingredients, such as competing mechanisms of the Si–H bond dissociation, electron–electron scattering作者: 鬧劇 時(shí)間: 2025-3-23 06:30 作者: 我說不重要 時(shí)間: 2025-3-23 13:43
Characterization of MOSFET Interface States Using the Charge Pumping Techniqueerivative. It is shown how one can determine the precise location of the HC induced damage through the application of the so-called constant field CP technique. In the constant field technique the stressed transistor junction is pulsed in phase with the gate terminal using a second pulse generator.作者: 珊瑚 時(shí)間: 2025-3-23 15:33 作者: OTTER 時(shí)間: 2025-3-23 19:29 作者: seruting 時(shí)間: 2025-3-23 23:55 作者: neologism 時(shí)間: 2025-3-24 06:24
Hot-Carrier Injection Degradation in Advanced CMOS Nodes: A Bottom-Up Approach to Circuit and Systemhenomena [such as electron–electron scattering (EES) or multiple vibrational excitation (MVE)]. Their nontrivial understanding [2–4] requires analyzing the degradation at a microscopic scale in order to come up with predictive modeling at a transistor level and even higher hierarchical modeling leve作者: ETHER 時(shí)間: 2025-3-24 08:25
Reliability Simulation Models for Hot Carrier Degradationmodel parameters, and (3) the need to keep the simulation overhead of these models to the bare minimum. These issues will be addressed in this chapter, and illustrated using the examples of (1) reverse-.. degradation in HBTs, (2) hot-carrier degradation in MOSFETs, and (3) hot-carrier degradation in作者: 易改變 時(shí)間: 2025-3-24 10:50
e their prior educational experiences and to identify their particular motivations and challenges. The book extends this self-inquiry to support the development of reflective practice which is key to enhancing students‘ learning and to enabling the ongoing professional development and practice of th作者: 縮短 時(shí)間: 2025-3-24 16:00 作者: breadth 時(shí)間: 2025-3-24 20:29
William McMahon,Yoann Mamy-Randriamihaja,Balaji Vaidyanathan,Tanya Nigam,Ninad Pimparkarpresented an in-depth investigation of how identities are caused to obstruct accessibility which violates human rights. Additionally, in this chapter, the contribution of this book to the existing body of knowledge and theoretical praxis has been illustrated very specifically. Last of all, the chapt作者: 暫時(shí)中止 時(shí)間: 2025-3-25 03:07
Stewart E. Rauch,Fernando Guarinational and national obligation for providing social security and current reform initiatives in Bangladesh. Moreover, this chapter has made discussion on some core concepts for getting clear understanding of the study. It has highlighted on research process have been applied to conduct the study. Ag作者: landmark 時(shí)間: 2025-3-25 06:54 作者: MODE 時(shí)間: 2025-3-25 07:57 作者: Intuitive 時(shí)間: 2025-3-25 14:00 作者: 祖?zhèn)髫?cái)產(chǎn) 時(shí)間: 2025-3-25 19:45 作者: 財(cái)主 時(shí)間: 2025-3-25 22:37
Filippo Alagining models to predict suitable subject combinations for students. Decision trees was trained on preprocessed data. Additionally, the work successfully created an AI recommendation system for personalized academic improvement. The experimental findings show the performance and structure of the decis作者: 墊子 時(shí)間: 2025-3-26 03:34 作者: fleeting 時(shí)間: 2025-3-26 04:26 作者: Parabola 時(shí)間: 2025-3-26 08:46 作者: Lipohypertrophy 時(shí)間: 2025-3-26 15:20
Christian Schlünderr delves into Amartya Sen’s capacity approach, which emphasises the freedoms and capacities of individuals as foundational to their well-being. It investigates the inclusion and exclusion criteria that define efforts to alleviate poverty. This chapter presents land titling as a powerful tool for pro作者: AWE 時(shí)間: 2025-3-26 18:42 作者: palpitate 時(shí)間: 2025-3-26 23:31
Alain Bravaix,Vincent Huard,Florian Cacho,Xavier Federspiel,David Royextbook for students of marine architecture. With its focus on classification aspects including design, construction, and maintainability, this guide is essential for anyone responsible for overseeing the desig978-3-031-74772-4978-3-031-74773-1Series ISSN 2692-4420 Series E-ISSN 2692-4471 作者: Intrepid 時(shí)間: 2025-3-27 03:59 作者: FOLLY 時(shí)間: 2025-3-27 08:33
Gregor Pobegenever,? educating neurology care providers about these issues and training them to provide equitable care for these patients can potentially improve neurology care access, delivery, and outcomes. ..?.In this boo978-3-031-62729-3978-3-031-62727-9作者: Fracture 時(shí)間: 2025-3-27 11:07
Alban Zaka,Pierpaolo Palestri,Quentin Rafhay,Raphael Clerc,Denis Rideau,Luca Selmi作者: 并置 時(shí)間: 2025-3-27 16:21
From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradationus possible isotope effects provide context for a discussion of some qualitative aspects of the physics. Typical industry DC hot carrier stress models and their application to AC circuit models are described and motivated in that context.作者: Connotation 時(shí)間: 2025-3-27 18:12
The Energy Driven Hot Carrier Modelon Model (LEM) in the short channel regime (especially at or below the 130?nm node) [1]. As MOSFET size and voltage are scaled down, the carrier energy distribution becomes increasingly dependent only on the applied bias, because of quasi-ballistic transport over the high field region. The energy dr作者: groggy 時(shí)間: 2025-3-28 00:07 作者: 粗糙濫制 時(shí)間: 2025-3-28 05:14
Physics-Based Modeling of Hot-Carrier Degradationuation. Such a solution can be achieved using either a stochastic solver based on the Monte Carlo approach or a deterministic counterpart that is based on representation of the carrier energy distribution function as a series of spherical harmonics. We discuss and check two implementations of our mo作者: Obvious 時(shí)間: 2025-3-28 09:51 作者: Glaci冰 時(shí)間: 2025-3-28 10:38
The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation expansions is given. The method is an attractive alternative to the Monte Carlo method, since it does not suffer from inherent stochastic limitations such as the difficulty of resolving small currents, excessive execution times, or the inability to deal with rare events such as tunneling or low-fre作者: Concerto 時(shí)間: 2025-3-28 16:56
Recovery from Hot Carrier Induced Degradation Through Temperature Treatmenther thick gate oxide and long channel which assures that mainly interface traps are created through the HC stress. We analyze the time and temperature dependence of the recovery of interface traps after HC stress using models from literature. The data is fairly consistent with the assumption of inte作者: critic 時(shí)間: 2025-3-28 20:27 作者: 熄滅 時(shí)間: 2025-3-29 02:50
Channel Hot Carriers in SiGe and Ge pMOSFETsode is of relevance for n-channel devices, while it is often neglected for p-channel devices whose reliability is typically limited by Negative Bias Temperature Instability (NBTI). However, for Ge-based p-channel, hot carrier effects are expected to worsen due to higher hole mobility and reduced cha作者: 豐滿中國 時(shí)間: 2025-3-29 04:44
Channel Hot Carrier Degradation and Self-Heating Effects in FinFETson is at low vertical electric field stress (V.?～?V./2) due to the interface degradation by hot carriers, while cold/hot carrier injection to the oxide bulk defect dominates at the high vertical field stress condition (V.?=?V.). In short channel devices, however, the most degraded condition is at hi作者: Paleontology 時(shí)間: 2025-3-29 08:35 作者: 農(nóng)學(xué) 時(shí)間: 2025-3-29 13:03
Compact Modelling of the Hot-Carrier Degradation of Integrated HV MOSFETsMOSFETs embedded in smart-power integrated circuits. After introducing the basic functions and structure of those devices, we touch upon the practical aspects of the evaluation of their resilience to hot-carrier degradation, with particular reference to the undesired self-heating effect. A short rev作者: 忙碌 時(shí)間: 2025-3-29 17:23
Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistorses has come to the forefront due to its suitability for multiple applications ranging from high-performance analog to millimeter-wave applications. Hot-carrier induced reliability degradation mechanism is one of the primary issues that strongly defines the safe-operating area of a SiGe HBT device an作者: acheon 時(shí)間: 2025-3-29 22:56 作者: 兩種語言 時(shí)間: 2025-3-30 01:12 作者: NAVEN 時(shí)間: 2025-3-30 05:25
Reliability Simulation Models for Hot Carrier Degradationracterization and reliability assessment in advanced CMOS technologies, Proceedings of the ESSDERC, 2010, pp. 64–72), circuit reliability simulation is becoming increasingly important. To enable reliability simulation, reliability simulation models are a prerequisite. These simulation models are oft作者: cutlery 時(shí)間: 2025-3-30 09:55
to demystify aspects of learning and writing practices and can be used by students as a practical resource to enhance their engagement with education and to support their success on their programmes. The book guides students in a range of areas to help their academic development including study tech作者: 佛刊 時(shí)間: 2025-3-30 15:59 作者: 不真 時(shí)間: 2025-3-30 20:37 作者: aspect 時(shí)間: 2025-3-30 21:20 作者: 秘方藥 時(shí)間: 2025-3-31 03:47 作者: 拋棄的貨物 時(shí)間: 2025-3-31 05:07 作者: BRIEF 時(shí)間: 2025-3-31 09:21
Markus Bina,Karl Ruppfour Blacks, one in six Hispanics, and three in ten American Indians have a disability, making this population the most prevalent yet unrecognized population. This chapter introduces a framework to mitigate the health disparities of people with disabilities in the context of rehabilitation medicine.作者: 裹住 時(shí)間: 2025-3-31 13:30 作者: 很是迷惑 時(shí)間: 2025-3-31 21:23
