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標題: Titlebook: High-Frequency Bipolar Transistors; Michael Reisch Book 2003 Springer-Verlag Berlin Heidelberg 2003 CMOS.Modulation.bipolar junction trans [打印本頁]

作者: 到來    時間: 2025-3-21 19:06
書目名稱High-Frequency Bipolar Transistors影響因子(影響力)




書目名稱High-Frequency Bipolar Transistors影響因子(影響力)學科排名




書目名稱High-Frequency Bipolar Transistors網(wǎng)絡公開度




書目名稱High-Frequency Bipolar Transistors網(wǎng)絡公開度學科排名




書目名稱High-Frequency Bipolar Transistors被引頻次




書目名稱High-Frequency Bipolar Transistors被引頻次學科排名




書目名稱High-Frequency Bipolar Transistors年度引用




書目名稱High-Frequency Bipolar Transistors年度引用學科排名




書目名稱High-Frequency Bipolar Transistors讀者反饋




書目名稱High-Frequency Bipolar Transistors讀者反饋學科排名





作者: Arbitrary    時間: 2025-3-21 20:25

作者: Ptosis    時間: 2025-3-22 03:46
Physics and Modeling of Heterojunction Bipolar Transistorshe emitter region, without losing too much current gain. This is of great importance for the realization of high-frequency bipolar transistors, since the extremely thin base widths of these devices require large doping concentrations in order to obtain reasonable values of base resistance and punchthrough voltage.
作者: 虛假    時間: 2025-3-22 06:14
Physics and Modeling of Bipolar Junction Transistorspact models. On the basis of these results, the most prominent compact models for large-signal and small-signal operation will be considered, together with a presentation of parameter extraction procedures.
作者: ARC    時間: 2025-3-22 09:00

作者: 有說服力    時間: 2025-3-22 16:09
Book 2003s of capital letters are written here as one capital letter with the rest in the form of a subscript (e.g. XCJC is used here instead of the XCJC used in the SPICE input). Concerning the use of lower-case and capital letters, the following rules are applied: ? Time-dependent large-signal quantities a
作者: dagger    時間: 2025-3-22 20:00

作者: 感激小女    時間: 2025-3-22 23:11
them. The proposed techniques apply to both combinational and sequential circuits and to circuits that contain a mix of control and datapath logic. In many applications, the degree of resilience often varies depending on the application context or the dataset being processed. In such cases, it is de
作者: 散步    時間: 2025-3-23 02:15

作者: Palpate    時間: 2025-3-23 07:31

作者: 有抱負者    時間: 2025-3-23 12:24

作者: AVOID    時間: 2025-3-23 15:05

作者: Osteons    時間: 2025-3-23 19:16

作者: 使聲音降低    時間: 2025-3-24 01:54
Michael Reischabilities in approximate computing. Specifically, the security threats in approximate circuits and approximate testing techniques are deeply investigated and analyzed. A countermeasure, a self-detection technique, to tampering attack is also proposed and an experiment is carried out to evaluate the
作者: 切割    時間: 2025-3-24 04:07
Michael Reischabilities in approximate computing. Specifically, the security threats in approximate circuits and approximate testing techniques are deeply investigated and analyzed. A countermeasure, a self-detection technique, to tampering attack is also proposed and an experiment is carried out to evaluate the
作者: 名詞    時間: 2025-3-24 08:02
abilities in approximate computing. Specifically, the security threats in approximate circuits and approximate testing techniques are deeply investigated and analyzed. A countermeasure, a self-detection technique, to tampering attack is also proposed and an experiment is carried out to evaluate the
作者: 疲勞    時間: 2025-3-24 13:11
Michael Reischabilities in approximate computing. Specifically, the security threats in approximate circuits and approximate testing techniques are deeply investigated and analyzed. A countermeasure, a self-detection technique, to tampering attack is also proposed and an experiment is carried out to evaluate the
作者: Outmoded    時間: 2025-3-24 18:41

作者: 哎呦    時間: 2025-3-24 20:07
ts (adders and multipliers) have demonstrated the potential for efficiency improvements using approximate circuits. However, their broader adoption requires systematic methodologies that can create approximate implementations for any arbitrary circuit. An approximate circuit can be viewed as realizi
作者: 太空    時間: 2025-3-25 02:48

作者: Throttle    時間: 2025-3-25 06:17
Michael Reisch. At the same time, DNNs require millions of expensive floating-point operations to process each input, which limit their applicability to resource-constrained systems that are limited in hardware design area or power consumption. Our goal is to devise lightweight, approximate accelerators for DNN a
作者: 晚來的提名    時間: 2025-3-25 08:36

作者: thrombus    時間: 2025-3-25 12:42

作者: 懶惰民族    時間: 2025-3-25 19:30
Michael Reischs. It provides significant benefits for energy-efficient systems and is being considered for high speed and low power nanoscale integrated circuit (IC) designs. It is crucial for ICs to achieve high speed and low power, where some intrinsic errors are acceptable, such as (deep-) machine learning, im
作者: 錯    時間: 2025-3-25 23:13

作者: Fresco    時間: 2025-3-26 02:39
Michael Reischs. It provides significant benefits for energy-efficient systems and is being considered for high speed and low power nanoscale integrated circuit (IC) designs. It is crucial for ICs to achieve high speed and low power, where some intrinsic errors are acceptable, such as (deep-) machine learning, im
作者: airborne    時間: 2025-3-26 04:23
s. It provides significant benefits for energy-efficient systems and is being considered for high speed and low power nanoscale integrated circuit (IC) designs. It is crucial for ICs to achieve high speed and low power, where some intrinsic errors are acceptable, such as (deep-) machine learning, im
作者: 亞麻制品    時間: 2025-3-26 12:00

作者: FIN    時間: 2025-3-26 13:00
Michael Reischs. It provides significant benefits for energy-efficient systems and is being considered for high speed and low power nanoscale integrated circuit (IC) designs. It is crucial for ICs to achieve high speed and low power, where some intrinsic errors are acceptable, such as (deep-) machine learning, im
作者: Affectation    時間: 2025-3-26 19:38

作者: 平庸的人或物    時間: 2025-3-26 21:15
Semiconductor Physics Required for Bipolar-Transistor Modelinglacement (or electric flux density) ., the magnetic field . and the magnetic induction (or magnetic flux density) .; the vector . describes the electric current density due to moving charges, and ρ describes the charge density.
作者: Mortar    時間: 2025-3-27 02:57

作者: Femish    時間: 2025-3-27 07:43
Physics and Modeling of Heterojunction Bipolar Transistorsthe emitter region exceeds the bandgap in the base region (.. > ..) fewer carriers will be injected into the emitter at a given transfer current density in comparison with a conventional transistor [.,.]: the current gain increases according to . as long as recombination in the base layer is negligi
作者: 不足的東西    時間: 2025-3-27 13:01
Noise Modelingelectronic devices. Generally we may distinguish between shot noise, due to fluctuations of the current associated with directed carrier motion, for example, caused by an applied electric field, and thermal noise (also termed diffusion noise or velocity fluctuation noise), due to the thermal motion
作者: 競選運動    時間: 2025-3-27 15:07

作者: osteocytes    時間: 2025-3-27 18:37

作者: 乞討    時間: 2025-3-27 22:07
978-3-642-63205-1Springer-Verlag Berlin Heidelberg 2003
作者: 損壞    時間: 2025-3-28 03:15

作者: 無瑕疵    時間: 2025-3-28 08:56
ApplicationsIn this chapter, four important applications of high-frequency bipolar transistors — ECL digital circuits, high-speed optical data transmission systems, RF circuits and BiCMOS circuits — are briefly considered.
作者: FER    時間: 2025-3-28 12:47
https://doi.org/10.1007/978-3-642-55900-6CMOS; Modulation; bipolar junction transistor; drift transistor; heterojunction bipolar transistor; integ
作者: 畢業(yè)典禮    時間: 2025-3-28 16:33
Michael ReischHot topic in modern microelectronics.Fast single and integrated transistors as well as integrated bipolar circuits are treated.Includes supplementary material:
作者: 禁令    時間: 2025-3-28 20:00
Springer Series in Advanced Microelectronicshttp://image.papertrans.cn/h/image/426602.jpg




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