標(biāo)題: Titlebook: High Voltage Devices and Circuits in Standard CMOS Technologies; Hussein Ballan,Michel Declercq Book 1999 Springer Science+Business Media [打印本頁] 作者: 稀少 時(shí)間: 2025-3-21 17:05
書目名稱High Voltage Devices and Circuits in Standard CMOS Technologies影響因子(影響力)
書目名稱High Voltage Devices and Circuits in Standard CMOS Technologies影響因子(影響力)學(xué)科排名
書目名稱High Voltage Devices and Circuits in Standard CMOS Technologies網(wǎng)絡(luò)公開度
書目名稱High Voltage Devices and Circuits in Standard CMOS Technologies網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱High Voltage Devices and Circuits in Standard CMOS Technologies被引頻次
書目名稱High Voltage Devices and Circuits in Standard CMOS Technologies被引頻次學(xué)科排名
書目名稱High Voltage Devices and Circuits in Standard CMOS Technologies年度引用
書目名稱High Voltage Devices and Circuits in Standard CMOS Technologies年度引用學(xué)科排名
書目名稱High Voltage Devices and Circuits in Standard CMOS Technologies讀者反饋
書目名稱High Voltage Devices and Circuits in Standard CMOS Technologies讀者反饋學(xué)科排名
作者: ABOUT 時(shí)間: 2025-3-21 20:55 作者: indicate 時(shí)間: 2025-3-22 02:15 作者: 動(dòng)物 時(shí)間: 2025-3-22 07:58
978-1-4419-5052-9Springer Science+Business Media Dordrecht 1999作者: 導(dǎo)師 時(shí)間: 2025-3-22 12:21 作者: LAPSE 時(shí)間: 2025-3-22 13:14 作者: 友好 時(shí)間: 2025-3-22 19:55 作者: VERT 時(shí)間: 2025-3-22 21:32
Hussein Ballan,Michel Declercqe management of the resources at hand in the best possible way so that facility expansion is delayed as much as possible with the corresponding capital savings. This chapter presents a methodology that combines evolutionary algorithms and simulation for performing the allocation of the check-in desk作者: 感情脆弱 時(shí)間: 2025-3-23 04:24 作者: 鉆孔 時(shí)間: 2025-3-23 08:01 作者: doxazosin 時(shí)間: 2025-3-23 11:29 作者: 五行打油詩 時(shí)間: 2025-3-23 17:57 作者: mettlesome 時(shí)間: 2025-3-23 19:45
Hussein Ballan,Michel Declercq purpose of improving the quality of life of people by making medicines derived from human plasma..Its mission, for five decades, has been based on the implementation of actions framed within the perspectives of Quality of Life marketing (QoL marketing). Its commercial policies distinguish it from o作者: notification 時(shí)間: 2025-3-24 01:17 作者: 鈍劍 時(shí)間: 2025-3-24 03:34
the world wide webSVMs have emerged as very successful pattern recognition methods in recent years [16]. SVMs have yielded superior performance in various applications such as; text categorization [15], and face detection [12], content-based image retrieval [6], and learning image similarity [4]. T作者: VEN 時(shí)間: 2025-3-24 10:31 作者: Patrimony 時(shí)間: 2025-3-24 11:53
MOSFET High-Voltage Technologies,hed first at a device level where the isolated vertical and lateral DMOSFET structures are presented. Then, the corresponding high-voltage technologies are discussed according to the isolation technique used between devices. A rough presentation of the high-voltage technologies based on the p-n junc作者: BRAVE 時(shí)間: 2025-3-24 15:34
Design of High-Voltage Devices Using the SVX Technique,this chapter. It is the technological basis of this book, and will be called Smart Voltage eXtension (SVX). In order to carry out the design of the complementary high-voltage devices, the possibilities of implementing such devices by the use of existing technological layers are examined, and the mai作者: grieve 時(shí)間: 2025-3-24 21:45 作者: 浮夸 時(shí)間: 2025-3-25 02:56 作者: adipose-tissue 時(shí)間: 2025-3-25 03:43
12V Delta-Sigma Class-D Audio Amplifier,mit beyond which the SVX technique loses its advantages with respect to dedicated technologies. The class-D audio amplifier presented in this chapter is a typical medium power application suited for this purpose. In addition to the power limit considerations, this chapter points Out the flexibility 作者: 不透明性 時(shí)間: 2025-3-25 08:49 作者: Enteropathic 時(shí)間: 2025-3-25 14:52 作者: 一夫一妻制 時(shí)間: 2025-3-25 17:54
Hussein Ballan,Michel Declercqlternatives in the presence of operational and cost constraints. The greedy search procedure quickly determines an acceptable solution in a web-based online application environment. The simulated annealing technique is more time consuming and is performed offline. The results of the application of t作者: kidney 時(shí)間: 2025-3-25 22:32 作者: Confidential 時(shí)間: 2025-3-26 01:54 作者: 窒息 時(shí)間: 2025-3-26 06:55
Hussein Ballan,Michel Declercqainability criteria. Secondly, we model and simulate the Mexico City’s public transportation network as a complex network. Thirdly, we characterize the complex network topology of the Mexico City’s public transportation network, and finally we present the main results.作者: 不能和解 時(shí)間: 2025-3-26 11:03
Hussein Ballan,Michel Declercqnts for workforce and equipment based on flight schedules and stored heuristic criteria. Workforce requirements are then optimized using time shifting of tasks and task reassignments, which smooth the peaks in workforce requirements, and finally the simulation model is used to verify the generated s作者: Insensate 時(shí)間: 2025-3-26 12:41
Hussein Ballan,Michel DeclercqVerde is a sustainable company that contributes to quality of life since it encourages the recycling of WEEE. In conclusion, this initiative brings with it a global dimension to Extremadura (Spain) in relation to improving the effects of WEEE recycling on a rural region’s quality of life.作者: BRIEF 時(shí)間: 2025-3-26 18:05 作者: 系列 時(shí)間: 2025-3-26 22:03
Hussein Ballan,Michel Declercqport to be a tool that can also be used to improve the health and quality of life of its fellow citizens. Indeed, the social marketing perspective is in the DNA of the FSC and QOL marketing philosophy is fully included in it: customer well-being is complemented preserving society’s well-being.作者: 擴(kuò)音器 時(shí)間: 2025-3-27 04:00
Book 1999inly make use of electrostatic forces involving voltagesin the typical range of 30 to 60V. Last but not least, with the adventof deep sub-micron and/or low-power technologies, the operatingvoltage tends towards levels ranging from 1V to 2.5V, while theinterface needs to be compatible with higher vol作者: Recess 時(shí)間: 2025-3-27 07:51
tuators mainly make use of electrostatic forces involving voltagesin the typical range of 30 to 60V. Last but not least, with the adventof deep sub-micron and/or low-power technologies, the operatingvoltage tends towards levels ranging from 1V to 2.5V, while theinterface needs to be compatible with higher vol978-1-4419-5052-9978-1-4757-5404-9作者: CLAP 時(shí)間: 2025-3-27 12:32
ns when autonomous capabilities fail, a human may be called in to distinguish the bag type. Here we focus on the autonomous operation of such a telerobotic system. In th978-3-540-31649-7978-3-540-31662-6Series ISSN 1867-5662 Series E-ISSN 1867-5670 作者: 雄偉 時(shí)間: 2025-3-27 15:22 作者: 煤渣 時(shí)間: 2025-3-27 18:44
High Voltage Devices and Circuits in Standard CMOS Technologies978-1-4757-5404-9作者: 瑣碎 時(shí)間: 2025-3-27 23:16
Measurement and Modelling of the High-Voltage Devices,ltage transistor to model the behaviour of the lightly doped drains. Finally, the handling of high-voltage power supplies in a standard low-voltage CMOS process, necessitates the use of special layout precautions against parasitic effects. These precautions are discussed in the last part of this chapter.作者: GILD 時(shí)間: 2025-3-28 04:37
12V Delta-Sigma Class-D Audio Amplifier,of this approach in combining low-voltage signal processing and high-voltage features. In fact, the low-voltage part of the amplifier consists of a delta-sigma (Δ-Σ) modulator and some protection features,.such as over-temperature and over-current detection cells.作者: 蟄伏 時(shí)間: 2025-3-28 10:13
Book 1999fore a relative notion. ..High Voltage Devices and Circuits in Standard CMOS Technologies.is mainly focused on standard CMOS technologies, where high voltage(HV) is defined as any voltage higher than the nominal (low) voltage,i.e. 5V, 3.3V, or even lower. In this standard CMOS environment, ICdesigne作者: Irascible 時(shí)間: 2025-3-28 10:32
MOSFET High-Voltage Technologies,d start with a bipolar basis. The latter require tricky mechanical processing of the starting material. Interest is focused on the high-voltage technologies using a CMOS basis, where the required supplementary masks and processing steps are added to implement the high-voltage devices.作者: ARC 時(shí)間: 2025-3-28 15:29
Conclusions, The technology selected to illustrate this methodology is a standard 2μm n-well CMOS process, because an in-depth reliability analysis exists for the high-voltage extension of this process, and because many high-voltage circuits have been designed and mass-produced on its basis.作者: Orthodontics 時(shí)間: 2025-3-28 21:11 作者: Emg827 時(shí)間: 2025-3-29 00:25
