標(biāo)題: Titlebook: Heterostructures on Silicon: One Step Further with Silicon; Yves I. Nissim,Emmanuel Rosencher Book 1989 Kluwer Academic Publishers 1989 Ep [打印本頁] 作者: 輕舟 時間: 2025-3-21 18:37
書目名稱Heterostructures on Silicon: One Step Further with Silicon影響因子(影響力)
書目名稱Heterostructures on Silicon: One Step Further with Silicon影響因子(影響力)學(xué)科排名
書目名稱Heterostructures on Silicon: One Step Further with Silicon網(wǎng)絡(luò)公開度
書目名稱Heterostructures on Silicon: One Step Further with Silicon網(wǎng)絡(luò)公開度學(xué)科排名
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書目名稱Heterostructures on Silicon: One Step Further with Silicon被引頻次學(xué)科排名
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書目名稱Heterostructures on Silicon: One Step Further with Silicon年度引用學(xué)科排名
書目名稱Heterostructures on Silicon: One Step Further with Silicon讀者反饋
書目名稱Heterostructures on Silicon: One Step Further with Silicon讀者反饋學(xué)科排名
作者: Custodian 時間: 2025-3-22 00:13 作者: Nomogram 時間: 2025-3-22 03:32
0168-132X for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties 978-94-010-6900-7978-94-009-0913-7Series ISSN 0168-132X 作者: giggle 時間: 2025-3-22 07:29
Heterostructures on Silicon: One Step Further with Silicon作者: PHAG 時間: 2025-3-22 09:00
MBE Growth of GaAs and III–V Quantum Wells on Sirlattices and annealing on material quality. In-situ reflection high energy electron diffraction (RHEED) data has been correlated with ex-situ TEM and XRD structural data. A systematic study of photoluminescence properties of MQW’s on Si has also been carried out.作者: 聲明 時間: 2025-3-22 15:43 作者: Indelible 時間: 2025-3-22 20:19 作者: photopsia 時間: 2025-3-22 22:14 作者: 歌曲 時間: 2025-3-23 02:24 作者: Discrete 時間: 2025-3-23 06:42 作者: 生命 時間: 2025-3-23 09:52
Book 1989here are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties 作者: Expressly 時間: 2025-3-23 15:13 作者: 石墨 時間: 2025-3-23 21:41
S. Andrieu,F. Arnaud d’Avitaya,J. C. Pfistererheblich erweitert und hat auch oxidische und nichtoxidische Materialien einbezogen. Sie umfa?t heute eine Breite, die über die bis vor wenigen Jahrzehnten allein dominierende Silicat- (oder Ton-) Keramik weit hinausgeht.作者: 異常 時間: 2025-3-24 00:17
M. N. Charasse,B. Bartenlian,J. P. Hirtz,A. Peugnet,J. Chazelas,H. Blankce, which is about 1–3 cm in depth. The two pouches may be connected to each other by a fibrous strand that may be hugged by the puborectalis sling. Unlike other ARM, the anal canal and lower rectum are well surrounded by the sphincter complexes and hence the outcome after surgery is good.作者: 即席 時間: 2025-3-24 04:36 作者: 向下五度才偏 時間: 2025-3-24 10:17
Growth of GaAs and GaAlAs Double Heterostructures on Silicon by MOCVDown on silicon (surface morphology, crystalline quality, photoluminescence properties), we have studied the influence of some growth conditions on the optical properties of GaAs layers sandwiched between two GaAlAs layers.作者: 諄諄教誨 時間: 2025-3-24 12:59 作者: vascular 時間: 2025-3-24 17:26 作者: Salivary-Gland 時間: 2025-3-24 21:35
E. Kasperrsache-Wirkungs-Folgen zirkul?r vernetzte Bedingungsgefüge erkennen (., ., .; ., ., ., ., ., ., ., . 1978, S.52ff). “… Das Tun des einen erweist sich als das Tun des anderen …” (. 1987; ders. 1982a). Wenn im folgenden der Begriff . verwendet wird und nichts Einschr?nkendes angefügt ist, ist von . die Rede.作者: 譏笑 時間: 2025-3-25 02:07
T. P. Pearsall, h?uslicher Transfererprobungen. Hierzu wird zun?chst ein überblick zu Hintergrund und empirischer Datenlage der Intervalltherapie im Allgemeinen als auch im Speziellen hinsichtlich der Anorexia nervosa gegeben.作者: Gnrh670 時間: 2025-3-25 05:50 作者: 山羊 時間: 2025-3-25 07:44 作者: 抵消 時間: 2025-3-25 14:22 作者: 友好關(guān)系 時間: 2025-3-25 15:54
Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlatticesadditional threading dislocations can glide into the epilayer during cooling process and that misfit dislocations at the interface can be forced to dissociate on a (111) plane inclined to the interface leaving one partial dislocation at the interface and forming extended stacking faults.作者: 我就不公正 時間: 2025-3-25 23:28
Ge, GaAs and InSb Heteroepitaxy on (100) Silogy is extremely attractive. Furthermore large diameter Si wafers provide low cost robust and virtually defect free substrates. However, many materials problems arise due to the large lattice parameter and thermal expansion coefficient differences and difficulties in the nucleation of polar semiconductors on non-polar surfaces (2).作者: 濃縮 時間: 2025-3-26 00:52 作者: crutch 時間: 2025-3-26 05:59
Realization of Short Period SI/GE Strained-Layer Superlatticesstudied by LEED, interface sharpness by Auger Electron Spectroscopy and Raman measurements. Raman spectroscopy also gives information on Brillonin zone-folding effects and confined optical modes in thin layers.作者: Preserve 時間: 2025-3-26 08:28
Dopant Segregation and Incorporation in Molecular Beam Epitaxypt profiles. However, a smearing of the profile as well as a dopant surface enrichment is observed for many dopants both in Si (Sb.,Ga., In., As.) and GaAs (Sn., Mg., Mn.). Moreover, incomplete incorporation of the incident dopant flux is reported for dopants where desorption is significant (Mg in GaAs. and In., Sb., Ga., in Si).作者: Irrigate 時間: 2025-3-26 13:04
Don W. Shawtion, its development, the appearance of secondary associated complaints, and its precise characteristics should all be ascertained in detail. The interview may involve relatives; some questions are extremely personal and should be discussed on a one-to-one basis, in a place where there is privacy, available counseling, and a relaxed environment.作者: Introvert 時間: 2025-3-26 17:32 作者: 談判 時間: 2025-3-26 21:59
Epitaxy of GaAs on Patterned Si Substrates by MBEher temperature than the GaAs-ones, they have to be made first. Afterwards the Si devices are covered with a pattern made of Sio. or Si.N. before growing the GaAs layers in the unmasked areas. Then after a lift off, GaAs and Si devices are found close together and can be interconnected.作者: Pelvic-Floor 時間: 2025-3-27 02:01
NATO Science Series E:http://image.papertrans.cn/h/image/426044.jpg作者: ELUDE 時間: 2025-3-27 06:53 作者: UTTER 時間: 2025-3-27 12:34 作者: 側(cè)面左右 時間: 2025-3-27 17:12
Zuzanna Liliental-Weber,E. R. Weber,J. Washburn,T. Y. Liu,H. KroemerPolyps are macroscopically visible circumscribed protrusions from a mucosal surface ranging in size from a few millimeters to several centimeters. Polyps of the colon and rectum can be broad-based, narrow-based, or stalked. They may have a smooth or papillomatous surface.作者: FOR 時間: 2025-3-27 21:30
Luisa Gonzàlez,Ana Ruiz,Yolanda Gonzàlez,Angel Mazuelas,Fernando BrionesEndometriosis is defined as the presence of uterine tissue containing glandular and stromal elements at sites other the uterus. The tissue is hormone-responsive. . include adenomyosis externa and fibroadenomatosis uteri.作者: 商議 時間: 2025-3-27 22:15 作者: 山頂可休息 時間: 2025-3-28 03:50
C. J. Gibbings,C. G. Tuppen,M. A. G. Halliwell,M. Hockly,S. T. Davey,M. H. LyonsEinem der Pioniere entsprechender Konzeptualisierungen und Behandlungstechniken folgend (Haley 1963), kann Familientherapie als eine neue Methode der Betrachtung und Beeinflussung menschlich-seelischer Probleme verstanden werden.作者: invert 時間: 2025-3-28 07:01 作者: 啜泣 時間: 2025-3-28 13:57 作者: 賠償 時間: 2025-3-28 16:44 作者: 用手捏 時間: 2025-3-28 22:42 作者: 原始 時間: 2025-3-29 00:32 作者: Acquired 時間: 2025-3-29 03:52
R. Azoulay,E. V. K. Rao,B. Sermage,G. Leroux,L. Dugrand,N. Draidiat do not open into the bowel lumen. The disorder is more common in men. The preferred term is “pneumatosis cystoides intestinales” when other parts of the intestine besides the colon are involved. Other . include pneumatosis intestini, gas cysts of the bowel, lymphopneumatosis and bowel-wall emphysema [.] (Fig.5.1).作者: Maximize 時間: 2025-3-29 10:50
D. C. Houghton,J.-M. Baribeau,T. E. Jackman,J. McCaffrey,T. Sudersena Rao,J. B. Webb,D. Perovic,G. Cthis disorder, doctors are confused about rationalities of treatment. As with the uncertainty surrounding the use of polypragmasy, treatment multiplicity reflects the confusion, frustration, and lack of security surrounding this issue. The treatments suggested are intended both for hospital and for ambulatory or office settings.作者: fatuity 時間: 2025-3-29 11:49 作者: Harass 時間: 2025-3-29 16:56
GaAs on Si: Potential Applicationswo materials differ by about 4%, and the thermal expansion coefficients differ by more than a factor of two. Although such mismatched systems were considered infeasible only a few years ago, today they exemplify the revolution in epitaxial thin film capabilities that has spawned the promising new field called “Artificially Structured Materials”.作者: malapropism 時間: 2025-3-29 21:05 作者: macabre 時間: 2025-3-30 01:55 作者: BUDGE 時間: 2025-3-30 08:08
K. Woodbridgen anomaly in which all or part of the colon is replaced by a pouch-like dilatation, which communicates distally with the urogenital tract via a large fistula. In this condition, a supralevator anorectal malformation (ARM) is associated with a colonic pouch of variable size (5–15 cm in diameter). The作者: 有害 時間: 2025-3-30 10:54
M. N. Charasse,B. Bartenlian,J. P. Hirtz,A. Peugnet,J. Chazelas,H. Blankm the southern part of India at one stage. The anomaly is no longer as common, even in that region. The male:female ratio is 7:3. In fact, because of its rarity, many pediatric surgeons have not had the chance to see and manage such cases. Rectal atresia is characterized by the presence of the proxi作者: Cumulus 時間: 2025-3-30 15:37 作者: inculpate 時間: 2025-3-30 19:35 作者: arabesque 時間: 2025-3-30 22:05
K. Ploog,F. E. G. Guimaraes,W. Stolzroughout by appropriate case examples. Whilst it is recognised that most patients presenting to a gastroenterologist or coloproctologist will neither undergo nor require such an assessment, there are frequently occasions where such an assessment will help in the total management of the patient and h作者: 異端邪說下 時間: 2025-3-31 01:17 作者: Limited 時間: 2025-3-31 07:35
D. C. Houghton,J.-M. Baribeau,T. E. Jackman,J. McCaffrey,T. Sudersena Rao,J. B. Webb,D. Perovic,G. Cthis disorder, doctors are confused about rationalities of treatment. As with the uncertainty surrounding the use of polypragmasy, treatment multiplicity reflects the confusion, frustration, and lack of security surrounding this issue. The treatments suggested are intended both for hospital and for 作者: Innovative 時間: 2025-3-31 10:43
G. Radhakrishnan,A. Nouhi,J. KatzI feel in view of the individual‘s power to create self-therapeutic devices. This book is the saga of these young in- dividuals, who change and recreate the shape and dimensions of their bodies in a quest to achieve and finally demonstrate autonomy. Ironically, it seems that they can go on living th作者: 泛濫 時間: 2025-3-31 15:52 作者: 潛伏期 時間: 2025-3-31 18:22
E. Kasperhen Sichtweise von Welt stehen die modernen Systemwissenschaften, wie etwa die Kybernetik, die allgemeine Systemtheorie, Informationstheorie und Spieltheorie gegenüber. Von ihnen leitet sich auch der Begriff . her. Auf menschliche Systeme angewandt bedeutet . vor allem: statt eingleisiger linearer U作者: 要控制 時間: 2025-3-31 22:45 作者: 鴕鳥 時間: 2025-4-1 03:22 作者: infelicitous 時間: 2025-4-1 09:16
S. Andrieu,F. Arnaud d’Avitaya,J. C. PfisterPalette der keramischen Werkstoffe besonders in den letzten Jahrhunderten seit der Entdeckung des europ?ischen Porzellans und den letzten Jahrzehnten erheblich erweitert und hat auch oxidische und nichtoxidische Materialien einbezogen. Sie umfa?t heute eine Breite, die über die bis vor wenigen Jahrz作者: 正論 時間: 2025-4-1 10:52
MBE Growth of GaAs and III–V Quantum Wells on Sioperties in combination with the well established silicon device technology. The problems inherent in this heteroepitaxy have now been well documented in the literature and are related mainly to the large lattice mismatch between the materials and the polar-nonpolar nature of the interface. The resu作者: 四目在模仿 時間: 2025-4-1 15:29 作者: PACT 時間: 2025-4-1 21:42
Embedded Molecular Beam Epitaxy for a Coplanar Gallium-Arsenide on Silicon Technologyf GaAs with the well established high density silicon technology. Devices with performances comparable to those of their GaAs on GaAs counterparts are frequently reported (.). Although the high density of threading dislocations together with the remaining stress in the device layers are limiting fac作者: 整潔 時間: 2025-4-2 02:27
Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlatticestion by strained layer superlattices was found. The mechanisms of defect reduction were suggested based on Burgers vector analysis. It was shown that additional threading dislocations can glide into the epilayer during cooling process and that misfit dislocations at the interface can be forced to di
