標題: Titlebook: Handbook of Advanced Plasma Processing Techniques; Randy J. Shul,Stephen J. Pearton Book 2000 Springer-Verlag Berlin Heidelberg 2000 Plasm [打印本頁] 作者: 手套 時間: 2025-3-21 17:10
書目名稱Handbook of Advanced Plasma Processing Techniques影響因子(影響力)
書目名稱Handbook of Advanced Plasma Processing Techniques影響因子(影響力)學科排名
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書目名稱Handbook of Advanced Plasma Processing Techniques網(wǎng)絡公開度學科排名
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書目名稱Handbook of Advanced Plasma Processing Techniques被引頻次學科排名
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書目名稱Handbook of Advanced Plasma Processing Techniques年度引用學科排名
書目名稱Handbook of Advanced Plasma Processing Techniques讀者反饋
書目名稱Handbook of Advanced Plasma Processing Techniques讀者反饋學科排名
作者: 不開心 時間: 2025-3-21 21:32
,The Fat and Far … the Lean and Near,plasma characteristics include electron densities between 10. and 10. cm., electron temperatures from 0.1 to 10 eV, pressures of a few Torr to millitorr or below and excitation frequencies from dc to microwave. These parameters span a relatively wide range of conditions and make the selection of the best diagnostic tools challenging.作者: 陶醉 時間: 2025-3-22 03:24 作者: packet 時間: 2025-3-22 06:04
Book 2000fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen- sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interact作者: Unsaturated-Fat 時間: 2025-3-22 12:25
Ensuring Financial Sustainability,rgy, flux, directionality, and chemistry of ions impinging upon the semiconductor surface. Dry-etching processes utilize a combination of physical and chemicaletch components to achieve high etch anisotropy and excellent dimensional control.作者: 抑制 時間: 2025-3-22 14:30
https://doi.org/10.1007/978-3-540-78504-0ing, a high etch rate and selectivity, and a nearly vertical profile are desired. For MMIC applications, via etch depths can be 50 to 100 μm. Due to the large etch depth, etch rates of several μm min. are desired for high throughput.作者: Ischemia 時間: 2025-3-22 17:19 作者: Sedative 時間: 2025-3-22 22:27
Plasma Processing of III-V Materials,rgy, flux, directionality, and chemistry of ions impinging upon the semiconductor surface. Dry-etching processes utilize a combination of physical and chemicaletch components to achieve high etch anisotropy and excellent dimensional control.作者: 精美食品 時間: 2025-3-23 01:22 作者: 多山 時間: 2025-3-23 07:48
Device Damage During Low Temperature High-Density Plasma Chemical Vapor Deposition,tractive for improving conformbility of step coverage over high aspect-ratio features [.]. Moreover, a convenient process tool incorporates two chambers, one for etch and the other for deposition, joined by a central load-lock. This allows for sequential etch and deposition steps without the need to break vacuum.作者: barium-study 時間: 2025-3-23 12:56 作者: 考古學 時間: 2025-3-23 14:55 作者: nettle 時間: 2025-3-23 19:07 作者: Demulcent 時間: 2025-3-23 22:53 作者: 光亮 時間: 2025-3-24 04:38 作者: majestic 時間: 2025-3-24 09:57 作者: CLOUT 時間: 2025-3-24 12:23 作者: Lipoma 時間: 2025-3-24 15:30 作者: Magnificent 時間: 2025-3-24 23:04
https://doi.org/10.1007/978-3-031-39667-0ese structures there is a need to pattern the magnetic layers [.], generally thin films of materials such as NiFe, NiFeCo, which are often incorporated into multilayers comprising magnetic and nonmagnetic materials.作者: ingrate 時間: 2025-3-25 00:58 作者: 大炮 時間: 2025-3-25 03:34
Plasma Reactor Modeling,rs” is desirable and indeed essential to reduce design cycle and costs. This goal has three elements: reactor scale model, feature level model, and database of physical/chemical properties. With these elements coupled, the complete simulation package should function as a design aid in a TCAD environment.作者: 捐助 時間: 2025-3-25 07:50 作者: botany 時間: 2025-3-25 12:44 作者: Hallowed 時間: 2025-3-25 19:29 作者: freight 時間: 2025-3-25 21:13 作者: Acquired 時間: 2025-3-26 01:30
https://doi.org/10.1007/978-3-642-56989-0Plasma; Sensor; Technologie; chemistry; collision; database; development; microelectromechanical system (ME作者: 輪流 時間: 2025-3-26 04:23 作者: 聚集 時間: 2025-3-26 09:36 作者: 搖曳 時間: 2025-3-26 15:02 作者: 親愛 時間: 2025-3-26 19:42
https://doi.org/10.1007/978-3-642-76011-2ted via etch rate measurements and etched feature profile measurements. Despite the time consumption involved in such efforts, much has been learned about the interactions of the multiple control variables of modern etching reactors and the general understanding of plasma etch processing has been ad作者: 平淡而無味 時間: 2025-3-26 23:22
J. Barry Jones,Michael J. Keatingsts today to enable . design of damage-free etch reactors and processes. Semiconductor manufacturers continue to rely heavily upon the empirical approach to meet the technological challenges of new generations of devices despite the increasing cost and time requirements to solve new problems [.].作者: paragon 時間: 2025-3-27 02:44
,The AUMF Takes on “A Life of Its Own”,-type processing to the development of entirely new markets and applications. In addition to its use as a process module in MEMS processing, deep Si trench etching also has notable applications to packaging and systems integration. The development of integrated microsystems and advanced packaging ca作者: Dri727 時間: 2025-3-27 08:29
Plasma Fundamentals for Materials Processing,s that gives these plasmas their unique attributes for materials processing. The scope of this chapter excludes many advanced plasma topics such as confinement, stability, waves, and kinetic theory, which are typically of less importance in processing applications. A number of excellent texts cover 作者: Tdd526 時間: 2025-3-27 12:48 作者: fatty-acids 時間: 2025-3-27 16:49 作者: MURAL 時間: 2025-3-27 21:19
Bulk Si Micromachining for Integrated Microsystems and MEMS Processing,-type processing to the development of entirely new markets and applications. In addition to its use as a process module in MEMS processing, deep Si trench etching also has notable applications to packaging and systems integration. The development of integrated microsystems and advanced packaging ca作者: 退潮 時間: 2025-3-27 23:32
Book 2000nteraction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperativ作者: Granular 時間: 2025-3-28 03:51
rong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperativ978-3-642-63096-5978-3-642-56989-0作者: blackout 時間: 2025-3-28 08:02 作者: Forsake 時間: 2025-3-28 12:31
Plasma Fundamentals for Materials Processing,in a plasma interacts simultaneously with many others due to the long-range nature of the electric force. For this reason plasmas are said to exhibit collective behavior. Partially ionized, low temperature plasmas are used extensively for thin film materials processing applications such as etching a作者: Adj異類的 時間: 2025-3-28 15:29
Plasma Modeling,cs simulations, for example, routinely aid in the design of reactor geometry, pump ports, and inlet manifolds. Numerical heat transfer simulations provide guidance in the design of rapid-thermal process chambers and batch furnaces. For thermal chemical vapor deposition systems, chemistry modeling is作者: CEDE 時間: 2025-3-28 22:14
Plasma Reactor Modeling,s. The convergence of these two trends places unprecedented stringent demands on processes and equipments. The challenges faced by equipment manufacturers are enormous. Their dual role in the IC business involves design and development of new generation equipment and development and demonstration of作者: hypertension 時間: 2025-3-29 00:14
Overview of Plasma Diagnostic Techniques,n about the characteristics of a plasma. Plasmas used in microelectronics processing fall into the broad category of low temperature plasmas. Typical plasma characteristics include electron densities between 10. and 10. cm., electron temperatures from 0.1 to 10 eV, pressures of a few Torr to millito作者: arthrodesis 時間: 2025-3-29 05:42 作者: 過份 時間: 2025-3-29 09:40 作者: 痛苦一生 時間: 2025-3-29 11:59 作者: Contort 時間: 2025-3-29 16:33
Photomask Etching,ng become interesting to mask manufacturers. The reason for the late introduction of this technology becomes obvious when the methodologies used to image silicon wafers are examined. Contact printing, which uses a mercury arc lamp as a light source, satisfied the early needs of the industry when cri作者: Pandemic 時間: 2025-3-29 23:29 作者: 我怕被刺穿 時間: 2025-3-30 01:14
Plasma Processing of III-V Materials,ication. A significant limitation of wet etching methods is that they lead to etch profiles with either isotropic or crystallographic characteristics. Many optoelectronic components such as ridge waveguides, semiconductor laser facets, distributed Bragg reflector gratings, and deeply etched via hole作者: NOT 時間: 2025-3-30 06:50
Ion Beam Etching of Compound Semiconductors, requirements. Etched-facet diode lasers require extremely smooth vertical or precisely tilted facets. Blazed optical gratings use tenth-micrometer ridges etched at an angle. Ridge optical waveguide devices, such as modulators and switches, must be etched to a precise width and depth with a minimum 作者: Atheroma 時間: 2025-3-30 10:27
Dry Etching of InP Vias, the backside of the wafer [.–.]. MMICs are commonly fabricated on GaAs or InP substrates as these materials have advantages for high speed operation. Figure 13.1 shows a typical via hole structure for backside wafer contacts. These vias provide a common ground and a low inductance path from the sou作者: GENRE 時間: 2025-3-30 15:34
Device Damage During Low Temperature High-Density Plasma Chemical Vapor Deposition,he move to high-density plasma reactors [.–.]. Conversely there has been little work on the effects of ion damage or hydrogen passivation occurring during high-density plasma deposition [.–.]. There are numerous steps during III-V device fabrication where either SiO. or SiN. is deposited as a mask o作者: 品牌 時間: 2025-3-30 18:55
Dry Etching of Magnetic Materials,ape drives [.–.]. Information is written and stored as magnetization patterns on a recording media, and can be transferred back and forth using a magnetic sense head. In addition, magnetic random access memories (MRAM) are used for storage and processing of very high bit densities. These devices off
