標(biāo)題: Titlebook: Halbleiterprobleme 1; W. Schottky Book 1954 Springer-Verlag Berlin Heidelberg 1954 Halbleiter [打印本頁(yè)] 作者: minuscule 時(shí)間: 2025-3-21 16:31
書目名稱Halbleiterprobleme 1影響因子(影響力)
書目名稱Halbleiterprobleme 1影響因子(影響力)學(xué)科排名
書目名稱Halbleiterprobleme 1網(wǎng)絡(luò)公開度
書目名稱Halbleiterprobleme 1網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Halbleiterprobleme 1被引頻次
書目名稱Halbleiterprobleme 1被引頻次學(xué)科排名
書目名稱Halbleiterprobleme 1年度引用
書目名稱Halbleiterprobleme 1年度引用學(xué)科排名
書目名稱Halbleiterprobleme 1讀者反饋
書目名稱Halbleiterprobleme 1讀者反饋學(xué)科排名
作者: Occipital-Lobe 時(shí)間: 2025-3-21 22:26
Diskussionsbeitrag Schottky zum Referat Poganski,It is suggested that for the theoretical treatment of . contacts the emission current originating at the boundary by thermal pair generation is especially suitable for the discussion of current characteristics and for comparison with pair generation in the bulk of either semiconductor.作者: BULLY 時(shí)間: 2025-3-22 01:06 作者: cocoon 時(shí)間: 2025-3-22 06:28 作者: construct 時(shí)間: 2025-3-22 09:01
Halbleiterprobleme 1978-3-540-75296-7Series ISSN 1438-4329 Series E-ISSN 1617-5034 作者: Infelicity 時(shí)間: 2025-3-22 16:28 作者: Throttle 時(shí)間: 2025-3-22 19:59 作者: curriculum 時(shí)間: 2025-3-22 23:06 作者: 考得 時(shí)間: 2025-3-23 02:02 作者: set598 時(shí)間: 2025-3-23 06:40
https://doi.org/10.1007/978-1-4419-5686-6ansformations..The connection between the (exactly determined) stationary states of the whole system consisting of electrons and lattice-oscillations and a description using the conception of scattering is treated in some detail.作者: engrossed 時(shí)間: 2025-3-23 09:52 作者: 嬰兒 時(shí)間: 2025-3-23 16:58
https://doi.org/10.1007/978-94-011-7391-9hen Formulierung des Sachverhaltes und der daraus entspringenden Fragestellung versuchen wir einen allgemeineren Beitrag zu der Frage nach den Ladungen und den Termlagen von St?rstellen in Halbleitern und Phosphoren zu liefern.作者: 狂熱語(yǔ)言 時(shí)間: 2025-3-23 19:51
https://doi.org/10.1007/978-1-59259-108-4 the combination of determinants also (but not exclusively) individual determinants which correspond to an identical occupation of all elementary lattice cells or, in .‘s presentation, to a complete occupation of wave bands.作者: 成份 時(shí)間: 2025-3-23 22:22
https://doi.org/10.1007/978-3-030-68308-5neral by some partial mean free times, which can be gained by solving certain integral equations. The procedure grants treating higher order approximation in a manner quite easy to survey. As an example the polar crystals are treated.作者: Eeg332 時(shí)間: 2025-3-24 02:45 作者: 驕傲 時(shí)間: 2025-3-24 08:55 作者: 桉樹 時(shí)間: 2025-3-24 13:47 作者: Outshine 時(shí)間: 2025-3-24 17:26
,über die elektrolytische Gleichrichtung,mmetry is removed rectification is lost. The rectifying and most of the other properties of the system are not changed when the electrolyte is replaced by a semiconductor. An attempt is made to give a qualitative explanation of the rectifying properties of the system.作者: conference 時(shí)間: 2025-3-24 20:46
Richard Godwin-Austen,John Bendallunderstood in this way as well as the limitations in the applicability of the approximations used. Some applications of the results to the theory of ferromagnetism and of ionic crystals are discussed. For further progress it seems necessary to develop a theory which takes into account the . correlation of the electrons in a more satisfactory way.作者: 分開如此和諧 時(shí)間: 2025-3-25 00:20
The Neuropathology of HIV InfectionFor .- or .-electrons (second lattice type) each eigen-function is oriented towards two or even more directions of space. This leads to resonance phenomena and has the consequence that the breadth of the energy gap decreases. These relations are discussed for the above-named examples as well as for MgTl, Mg.Pb, NiO and PtS..作者: echnic 時(shí)間: 2025-3-25 03:47 作者: Classify 時(shí)間: 2025-3-25 07:38
Allgemeine Methoden und Ergebnisse der wellenmechanischen Vielelektronentheorie in Kristallgittern,understood in this way as well as the limitations in the applicability of the approximations used. Some applications of the results to the theory of ferromagnetism and of ionic crystals are discussed. For further progress it seems necessary to develop a theory which takes into account the . correlation of the electrons in a more satisfactory way.作者: lattice 時(shí)間: 2025-3-25 13:45
,Die chemische Bindung in halbleitenden Festk?rpern,For .- or .-electrons (second lattice type) each eigen-function is oriented towards two or even more directions of space. This leads to resonance phenomena and has the consequence that the breadth of the energy gap decreases. These relations are discussed for the above-named examples as well as for MgTl, Mg.Pb, NiO and PtS..作者: CHOP 時(shí)間: 2025-3-25 16:37 作者: 鞏固 時(shí)間: 2025-3-25 23:09 作者: 網(wǎng)絡(luò)添麻煩 時(shí)間: 2025-3-26 03:43 作者: 驕傲 時(shí)間: 2025-3-26 06:50 作者: adipose-tissue 時(shí)間: 2025-3-26 09:29 作者: 施加 時(shí)間: 2025-3-26 13:08
https://doi.org/10.1007/978-1-4419-5686-6o strong. An important example is that of an electron moving in a polar medium. If one tries to explain superconductivity with aid of the interaction between electrons and lattice oscillations, such a strong coupling is also to be taken into account..A survey of a number of recent papers is therefor作者: 先鋒派 時(shí)間: 2025-3-26 18:26
https://doi.org/10.1007/978-3-319-48824-0me interval between two consecutive collisions is not large compared with the duration of the collisions. It is shown, how in many cases of practical interest the results of perturbation theory can be justified.作者: gentle 時(shí)間: 2025-3-26 21:10 作者: BUCK 時(shí)間: 2025-3-27 04:21
The Neuropsychology of Languageg to the band theory it seems at first to be necessary to assume that the high excitation energy of the electron, which is owing to the energy of a large number of vibrational quanta, is transfered to the lattice in a simultaneous process (many quanta transition). All such attempts for an interpreta作者: Iniquitous 時(shí)間: 2025-3-27 06:41 作者: BLINK 時(shí)間: 2025-3-27 12:30
https://doi.org/10.1007/978-3-031-15680-9t—as mainly observed by .—also at the boundary between two semiconductors. These zones, the conductivity of which differs from the interior of the semiconductor, are generally situated on both sides of the boundary. Therefore, this layer is called “Doppelrandschicht” (double-barrier layer) in contra作者: contrast-medium 時(shí)間: 2025-3-27 17:34 作者: ASSAY 時(shí)間: 2025-3-27 21:45
Allgemeine Methoden und Ergebnisse der wellenmechanischen Vielelektronentheorie in Kristallgittern, may be built up either from Bloch functions or from atomic functions of the single electrons. The relations between these two representations are discussed for a number of cases and possible extensions are outlined. The principles of the energy term structure of electron ensembles in solids may be 作者: 磨碎 時(shí)間: 2025-3-28 01:31
Diskussion,ke into account the correlations between occupations as well as space correlations as a consequence of the Coulomb forces between the electrons are possible only, if the number of available individual functions is larger than the number of electrons, and if suitable combinations can be formed from t作者: 想象 時(shí)間: 2025-3-28 06:01
,Die chemische Bindung in halbleitenden Festk?rpern,cular octahedral arrangement (e. g. Pb S, As, Se) are discussed from the quantum-mechanical point of view. In the first-named lattice type the valence electrons are in a hybridized .. quantum state. Its characteristic is that the eigenfunctions are essentially oriented towards one side of the atom. 作者: 駕駛 時(shí)間: 2025-3-28 07:23 作者: 人充滿活力 時(shí)間: 2025-3-28 12:46 作者: negligence 時(shí)間: 2025-3-28 16:10
,Bemerkung über den Gültigkeitsbereich der St?rungsrechnung für die Berechnung der übergangswahrscheme interval between two consecutive collisions is not large compared with the duration of the collisions. It is shown, how in many cases of practical interest the results of perturbation theory can be justified.作者: 發(fā)微光 時(shí)間: 2025-3-28 22:42
,Vergleichende Betrachtungen über die Natur der St?rstellen in Halbleitern und Phosphoren,errn ., da? die Donatoren und Akzeptoren in Phosphoren anscheinend genau entgegengesetzte Funktionen ausüben wie in Halbleitern. Nach einer ausführlichen Formulierung des Sachverhaltes und der daraus entspringenden Fragestellung versuchen wir einen allgemeineren Beitrag zu der Frage nach den Ladunge作者: 大洪水 時(shí)間: 2025-3-29 02:31
,Strahlungslose Elektronenüberg?nge an Gitterst?rstellen,g to the band theory it seems at first to be necessary to assume that the high excitation energy of the electron, which is owing to the energy of a large number of vibrational quanta, is transfered to the lattice in a simultaneous process (many quanta transition). All such attempts for an interpreta作者: 完全 時(shí)間: 2025-3-29 03:41
,Randschichteffekte an der Grenzfl?che Halbleiter/Vakuum und Halbleiter/Gasraum,he phase boundaries..At the phase boundary between a semiconductor and a gas, the gas particles are bounded and an electronic equilibrium between adsorbed particles and the solid is produced (chemisorption). The production of a space charge barrier layer at the surface of the solid, which is a conse作者: 浪費(fèi)時(shí)間 時(shí)間: 2025-3-29 07:51
,Elektronik der Doppelrandschichten und dünnen Zwischenschichten,t—as mainly observed by .—also at the boundary between two semiconductors. These zones, the conductivity of which differs from the interior of the semiconductor, are generally situated on both sides of the boundary. Therefore, this layer is called “Doppelrandschicht” (double-barrier layer) in contra作者: 雜色 時(shí)間: 2025-3-29 15:08
,über die elektrolytische Gleichrichtung, relation during the formation of the oxide layer is in agreement with theoretical expectations. An analysis of the frequency dependence of the impendance of the system lcads to the conclusion that the oxide layer is not homogeneous throughout its thickness. The layers nearest the metal show a good 作者: PRO 時(shí)間: 2025-3-29 16:40
Fehlordnungsgleichgewichte in halbleitenden Kristallen vom Standpunkt des Massenwirkungsgesetzes,作者: LIMN 時(shí)間: 2025-3-29 22:56 作者: Capitulate 時(shí)間: 2025-3-30 00:55 作者: 宏偉 時(shí)間: 2025-3-30 04:46
,Elektronik der Doppelrandschichten und dünnen Zwischenschichten,tor and then recombine in the interior thereof. It is shown that in accordance with the last-mentioned transition mechanism the theory contains . theory of homogeneous . junctions as a special case. Double-barrier layers having one semiconductor adjoining another semiconductor of the same conductivi作者: 血友病 時(shí)間: 2025-3-30 11:47 作者: 男生如果明白 時(shí)間: 2025-3-30 14:30
https://doi.org/10.1007/978-3-031-15680-9tor and then recombine in the interior thereof. It is shown that in accordance with the last-mentioned transition mechanism the theory contains . theory of homogeneous . junctions as a special case. Double-barrier layers having one semiconductor adjoining another semiconductor of the same conductivi作者: 猜忌 時(shí)間: 2025-3-30 19:40 作者: characteristic 時(shí)間: 2025-3-30 20:54
A Generic Persistence Model for (C)LP Systems (and Two Useful Implementations), of using files and relational databases, a number of optimizations of the process (using information obtained from static global analysis and goal clustering), and performance results from an implementation of these ideas.作者: Maximize 時(shí)間: 2025-3-31 02:47
https://doi.org/10.1007/978-3-322-96805-0edrungen Redundanzen, die zur Erschlie?ung des Erkenntnisinteresses in Kauf genommen werden. Um dem Leser eine Orientierungshilfe an die Hand zu geben, wird zun?chst die allgemeine historische Entwicklung skizziert, in deren Rahmen sich die Ereignisse einfügen, die in den Analysen der Teildiskurse beschrieben werden.作者: 開始發(fā)作 時(shí)間: 2025-3-31 06:21 作者: Apraxia 時(shí)間: 2025-3-31 09:46
