標(biāo)題: Titlebook: HEMT Technology and Applications; Trupti Ranjan Lenka,Hieu Pham Trung Nguyen Book 2023 The Editor(s) (if applicable) and The Author(s), un [打印本頁] 作者: Philanthropist 時(shí)間: 2025-3-21 17:06
書目名稱HEMT Technology and Applications影響因子(影響力)
書目名稱HEMT Technology and Applications影響因子(影響力)學(xué)科排名
書目名稱HEMT Technology and Applications網(wǎng)絡(luò)公開度
書目名稱HEMT Technology and Applications網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱HEMT Technology and Applications被引頻次
書目名稱HEMT Technology and Applications被引頻次學(xué)科排名
書目名稱HEMT Technology and Applications年度引用
書目名稱HEMT Technology and Applications年度引用學(xué)科排名
書目名稱HEMT Technology and Applications讀者反饋
書目名稱HEMT Technology and Applications讀者反饋學(xué)科排名
作者: 后來 時(shí)間: 2025-3-21 23:13 作者: Irremediable 時(shí)間: 2025-3-22 03:22 作者: Counteract 時(shí)間: 2025-3-22 07:02
Anadijiban Das,Andrew DeBenedictisible substitute to the GaN channel for the next generation power as well as RF devices and circuits. This chapter describes the polarization details of Al.Ga.N/Al.Ga.N heterostructure, and various device structure of AlGaN channel HEMTs and their static and dynamic characteristics.作者: CESS 時(shí)間: 2025-3-22 11:46 作者: Coterminous 時(shí)間: 2025-3-22 14:03
The Genesis of Simulation in DynamicsS) into the existing HEMT models and considering thin subcritical barrier thickness can satisfy the modeling challenges of the DC characteristics of this device. Moreover, oxide barrier interface charges also affect the shift in threshold voltage toward the positive .-axis of transfer characteristics up to a larger extent.作者: sparse 時(shí)間: 2025-3-22 19:14 作者: 鬧劇 時(shí)間: 2025-3-22 21:45 作者: 追蹤 時(shí)間: 2025-3-23 01:56
Enhancement-Mode MOSHEMT,S) into the existing HEMT models and considering thin subcritical barrier thickness can satisfy the modeling challenges of the DC characteristics of this device. Moreover, oxide barrier interface charges also affect the shift in threshold voltage toward the positive .-axis of transfer characteristics up to a larger extent.作者: accrete 時(shí)間: 2025-3-23 06:00
https://doi.org/10.1057/9780230612129derlapped structure. The chapter also delves into the advantages of multigate structures and the use of quaternary indium aluminum gallium nitride (InAlGaN) compound to deliver higher breakdown voltage.作者: TAP 時(shí)間: 2025-3-23 12:59
Multigate MOS-HEMT,derlapped structure. The chapter also delves into the advantages of multigate structures and the use of quaternary indium aluminum gallium nitride (InAlGaN) compound to deliver higher breakdown voltage.作者: Constrain 時(shí)間: 2025-3-23 15:57
The generation of high magnetic fieldslevels of AlGaN/GaN and MgZnO/ZnO HEMT are studied with respect to different temperatures. Further, we have also comparatively reviewed the important transport properties including 2DEG density, internal electric field, and optical gain of AlGaN/GaN and MgZnO/ZnO quantum well structures having identical dimensions.作者: 放牧 時(shí)間: 2025-3-23 19:29 作者: 乞討 時(shí)間: 2025-3-24 00:22 作者: 整頓 時(shí)間: 2025-3-24 05:40 作者: 格子架 時(shí)間: 2025-3-24 08:59 作者: tenuous 時(shí)間: 2025-3-24 12:04
Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistolevels of AlGaN/GaN and MgZnO/ZnO HEMT are studied with respect to different temperatures. Further, we have also comparatively reviewed the important transport properties including 2DEG density, internal electric field, and optical gain of AlGaN/GaN and MgZnO/ZnO quantum well structures having identical dimensions.作者: BLA 時(shí)間: 2025-3-24 16:54
,Performance Analysis of HfO2 and Si3N4 Dielectrics in β-Ga2O3 HEMT, the material. The passivation layer controls the gate leakage current and improves the pinch-off characteristics of the device. The transfer characteristic, transconductance, and output conductance demonstrate the device tunability for application in power radio frequency and microwave.作者: 系列 時(shí)間: 2025-3-24 19:01
Operation Principle of AlGaN/GaN HEMT,p devices like AlGaAs/GaAs. Because of the outstanding characteristics of the GaN HEMTs and their composited materials, they are becoming promising devices for the upcoming generation of more power and highest frequency-based implements. This chapter will provide a complete overview of the “Operation Principle of AlGaN/GaN HEMT.”作者: 舊石器時(shí)代 時(shí)間: 2025-3-25 02:29 作者: 沒收 時(shí)間: 2025-3-25 05:52
Linearity Analysis of AlN/,-Ga,O, HEMT for RFIC Design,r input intercept point (IIP.), third-order intermodulation distortion (IMD.), and gain-transconductance frequency product (GTFP) are computed to predict the linearity performance and minimize intermodulation distortion. The present analysis is beneficial for optimizing the device bias point required for RFIC design.作者: CERE 時(shí)間: 2025-3-25 07:45
2731-4200 in GaN HEMT and Ga2O3 HEMT.Presents basic operation princip.This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book pres作者: Lipoprotein(A) 時(shí)間: 2025-3-25 14:44 作者: 安慰 時(shí)間: 2025-3-25 16:59 作者: interrupt 時(shí)間: 2025-3-25 23:19 作者: galley 時(shí)間: 2025-3-26 03:54 作者: Fraudulent 時(shí)間: 2025-3-26 07:26 作者: 言行自由 時(shí)間: 2025-3-26 11:43
HEMT Technology and Applications978-981-19-2165-0Series ISSN 2731-4200 Series E-ISSN 2731-4219 作者: Prognosis 時(shí)間: 2025-3-26 14:48 作者: 全等 時(shí)間: 2025-3-26 20:40 作者: CREST 時(shí)間: 2025-3-27 00:56
The Genesis and Ethos of the Marketmobility starts decreasing due to rising lattice temperature in the constant low-field mobility model, whereas higher electric field-led carrier velocity saturation is attributed to lower mobility in the field-dependent mobility model.作者: dapper 時(shí)間: 2025-3-27 02:53 作者: Anthology 時(shí)間: 2025-3-27 08:25 作者: SCORE 時(shí)間: 2025-3-27 13:25
https://doi.org/10.1007/978-1-4419-1406-4le pre-treatment process steps, this technology suffer from noise signals which restrict their detection limit. Upon the introduction of a few external change around surface conditions, i.e., linking of biomolecules in the underlap area of gate region results in significant variation in the piezoele作者: 貿(mào)易 時(shí)間: 2025-3-27 14:08
Book 2023 the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research..作者: CHANT 時(shí)間: 2025-3-27 18:10 作者: mercenary 時(shí)間: 2025-3-28 01:45
Influence of Al2O3 Oxide Layer Thickness Variation on PZT Ferroelectric Al0.3Ga0.7N/AlN/GaN E-Mode aN/Si–substrate interfaces by producing better surface morphology. Furthermore, silicon-based substrates are used to achieve excellent thermal characteristics. Due to the polarization effect, a two-dimensional electron gas (2-DEG) is created at the Al.Ga.N/GaN interface. The analog performance param作者: Lipoprotein(A) 時(shí)間: 2025-3-28 02:20
,3D Simulation Study of Laterally Gated AlN/β-Ga2O3 HEMT Technology for RF and High-Power Nanoelectrmobility starts decreasing due to rising lattice temperature in the constant low-field mobility model, whereas higher electric field-led carrier velocity saturation is attributed to lower mobility in the field-dependent mobility model.作者: 運(yùn)動(dòng)性 時(shí)間: 2025-3-28 07:13
High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis,ics-based device simulator for design and performance prediction of the semiconductor device are very important. This book chapter describes an overview of the HEMT device and its physics-based simulation for performance analysis.作者: 怕失去錢 時(shí)間: 2025-3-28 11:23
,Evolution and Present State-of-Art Gallium Oxide HEMTs–,witching?>1?kW. Going by what Ga.O. promises, it can be considered as a viable candidate for these emerging as well as existing power electronics areas. Large bandgap-led high critical field of .-Ga.O. ensures superior performance in high voltage rectifiers and E-mode MOSFETs over GaN and SiC. Furth作者: Lethargic 時(shí)間: 2025-3-28 16:27
HEMT for Biosensing Applications,le pre-treatment process steps, this technology suffer from noise signals which restrict their detection limit. Upon the introduction of a few external change around surface conditions, i.e., linking of biomolecules in the underlap area of gate region results in significant variation in the piezoele作者: Morose 時(shí)間: 2025-3-28 22:41 作者: uncertain 時(shí)間: 2025-3-28 23:26 作者: 柏樹 時(shí)間: 2025-3-29 05:21 作者: 狂熱文化 時(shí)間: 2025-3-29 09:15 作者: 流浪 時(shí)間: 2025-3-29 11:35 作者: 提煉 時(shí)間: 2025-3-29 16:53 作者: Terrace 時(shí)間: 2025-3-29 20:56 作者: Ingratiate 時(shí)間: 2025-3-30 03:33 作者: 子女 時(shí)間: 2025-3-30 05:36 作者: 最小 時(shí)間: 2025-3-30 09:39
The Genesis of Simulation in Dynamicslay a major role in power electronic applications for fail-safe operation. However, due to the formation of two-dimensional electron gas (2DEG), these devices operate in depletion mode and the realization of normally off MOSHEMT has become a challenge among the researchers. In this chapter, first at作者: 小木槌 時(shí)間: 2025-3-30 16:01
https://doi.org/10.1007/978-1-4899-2067-6ng applications like high power, high frequency, high reliability in switching speeds, etc. This device became most promising due to its matchless properties over the conventional technologies which use Si-based materials, specifically with their impressive electrical management features demonstrati作者: BYRE 時(shí)間: 2025-3-30 17:50
https://doi.org/10.1007/b138242h-speed circuits and high power requirements. These devices are finding special interest to replace conventional field-effect transistors having outstanding performance in the domain of high-frequency applications. In HEMT, the high mobility of electrons and highly confined characteristics of the tw作者: Altitude 時(shí)間: 2025-3-30 22:24
The Genetic Mechanism and the Origin of Life RF and high power Applications. The strong bonding nature of such III–V binary and ternary compounds ensures robustness to ionizing radiations for Space Electronics. In this regard, GaN has established itself as the dominating material for fulfilling the needs of future RF and high power applicatio作者: Alienated 時(shí)間: 2025-3-31 00:59 作者: assail 時(shí)間: 2025-3-31 08:54
Kenro Kusumi,Sally L. Dunwoodieder derivatives of transconductance, output-conductance (.), intrinsic-gain (dB), gate-source capacitance (.), gate-drain capacitance (.), transconductance-generation factor (TGF), transconductance-frequency product (.), 1-dB compression-point, extrapolated input voltages (VIP. and VIP.), third-orde作者: interlude 時(shí)間: 2025-3-31 11:35
https://doi.org/10.1007/978-1-4419-1406-4ion, multifunction, and miniaturization. ISFET’s based sensor has been processed for the very same as they deliver faster response, higher sensitivity, higher resolution, and label-free detection. The major drawback of these types of sensors it lacks because of its material degradation of the gate i作者: Peak-Bone-Mass 時(shí)間: 2025-3-31 16:12 作者: confide 時(shí)間: 2025-3-31 19:54
Breakdown Mechanisms and Scaling Technologies of AlGaN/GaN HEMTs,ts a brief overview of various factors, which cause an early breakdown in AlGaN/GaN HEMT at high drain voltage. The chapter also covers technological advancements proposed so far by various research groups to enhance the breakdown voltage of the device. Further, scaling technologies are discussed to
