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作者: Halcyon    時(shí)間: 2025-3-21 18:48
書(shū)目名稱(chēng)Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets影響因子(影響力)




書(shū)目名稱(chēng)Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets影響因子(影響力)學(xué)科排名




書(shū)目名稱(chēng)Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱(chēng)Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱(chēng)Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets被引頻次




書(shū)目名稱(chēng)Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets被引頻次學(xué)科排名




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書(shū)目名稱(chēng)Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets讀者反饋




書(shū)目名稱(chēng)Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets讀者反饋學(xué)科排名





作者: antecedence    時(shí)間: 2025-3-21 21:19

作者: BLUSH    時(shí)間: 2025-3-22 03:23

作者: LIMN    時(shí)間: 2025-3-22 07:36

作者: Infect    時(shí)間: 2025-3-22 11:40

作者: Override    時(shí)間: 2025-3-22 13:36
Politics and the History CurriculumIn this chapter, the scavenging concept is analyzed. As it was commented in the introduction, Kim et al. [1] explored this effect for the first time with the aim of reducing the SiO. layer that growth at the high κ/silicon interface.
作者: Override    時(shí)間: 2025-3-22 21:04

作者: IST    時(shí)間: 2025-3-22 21:49
Introduction,The integrated circuits (ICs) based on complementary metal-oxide-semiconductor (CMOS) devices are currently the dominant technology in the microelectronic industry. Its success is based on the low static power consumption and its high integration density.
作者: gain631    時(shí)間: 2025-3-23 02:26

作者: 變色龍    時(shí)間: 2025-3-23 08:18
Characterization Techniques,The study of the semiconductor/high κ interface and the properties of the dielectric film, grown using the fabrication techniques described in the former chapter, are one of the main objectives of this thesis.
作者: FLOAT    時(shí)間: 2025-3-23 13:08
Thermal Oxidation of Gd2O3,A straightforward method to deposit gadolinium oxide is reactive sputtering from a metallic Gd target using a mixed Ar/O. atmosphere. The drawback of this approach is that the highly reactive excited oxygen molecules presented in the plasma can oxidize the substrate during the first stages of dielectric growth.
作者: brother    時(shí)間: 2025-3-23 14:15
Gadolinium Scandate,Obtaining a high κ film of Gd.Sc.O. by means of HPS from metallic Gd and Sc targets was one of the main objectives of this thesis and it is analyzed in this chapter.
作者: 昏暗    時(shí)間: 2025-3-23 20:55
Interface Scavenging,In this chapter, the scavenging concept is analyzed. As it was commented in the introduction, Kim et al. [1] explored this effect for the first time with the aim of reducing the SiO. layer that growth at the high κ/silicon interface.
作者: Mediocre    時(shí)間: 2025-3-24 00:28

作者: emission    時(shí)間: 2025-3-24 03:40
https://doi.org/10.1007/978-1-4039-3842-8and the substrate. These reduced the effective permittivity, as it was pointed out in the former chapter. Thus, the study of other alternatives is mandatory in order to obtain, with HPS, a high κ dielectric with good performance from metallic targets.
作者: Respond    時(shí)間: 2025-3-24 07:17
Religion and Youth in the Soviet Union, InP substrates. The novelty of this work consists on the dielectric deposition process. A two-step procedure was developed: first, metallic thin films of Gd, Sc and a nanolaminate of them were deposited by means of high pressure sputtering, a non-conventional technique, in an Ar atmosphere from metallic targets.
作者: defendant    時(shí)間: 2025-3-24 11:29

作者: gangrene    時(shí)間: 2025-3-24 18:00
Conclusions and Future Work, InP substrates. The novelty of this work consists on the dielectric deposition process. A two-step procedure was developed: first, metallic thin films of Gd, Sc and a nanolaminate of them were deposited by means of high pressure sputtering, a non-conventional technique, in an Ar atmosphere from metallic targets.
作者: Binge-Drinking    時(shí)間: 2025-3-24 19:13
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets978-3-319-66607-5Series ISSN 2190-5053 Series E-ISSN 2190-5061
作者: jarring    時(shí)間: 2025-3-24 23:48
Plasma Oxidation of Gd2O3 and Sc2O3,and the substrate. These reduced the effective permittivity, as it was pointed out in the former chapter. Thus, the study of other alternatives is mandatory in order to obtain, with HPS, a high κ dielectric with good performance from metallic targets.
作者: 尖牙    時(shí)間: 2025-3-25 06:49

作者: 斜坡    時(shí)間: 2025-3-25 08:45
https://doi.org/10.1007/978-1-4039-3842-8and the substrate. These reduced the effective permittivity, as it was pointed out in the former chapter. Thus, the study of other alternatives is mandatory in order to obtain, with HPS, a high κ dielectric with good performance from metallic targets.
作者: 偽證    時(shí)間: 2025-3-25 13:27
Religion and Youth in the Soviet Union, InP substrates. The novelty of this work consists on the dielectric deposition process. A two-step procedure was developed: first, metallic thin films of Gd, Sc and a nanolaminate of them were deposited by means of high pressure sputtering, a non-conventional technique, in an Ar atmosphere from met
作者: 山間窄路    時(shí)間: 2025-3-25 16:10
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
作者: 燈泡    時(shí)間: 2025-3-25 22:54

作者: 觀察    時(shí)間: 2025-3-26 02:02
Hemant Gupta,Arvind Yadav,Sanjay Kumar Mauryadecided to take evangelistic advantage of the annual Fourth of July parades. We printed what is typically referred to as “the plan of salvation” on hundreds of Frisbees, which volunteers then handed out with bottled water to the sweaty masses who passed by our doorstep. While many in our community l
作者: 集中營(yíng)    時(shí)間: 2025-3-26 04:33
Hannah Sackett neutron, but not the diffraction patterns characteristic of crystals. The intensity distributions from NC solids are usually transformed into radial distribution functions (RDF), but the interpretation of the RDF‘s is not unique. The lack of long-range order, and the non-uniqueness of the structura
作者: 問(wèn)到了燒瓶    時(shí)間: 2025-3-26 10:38

作者: Conspiracy    時(shí)間: 2025-3-26 15:12
Influence of Point Mass Over FGM Plate for Vibration Signature in Different Boundary Conditions Usiof 6th February I958, authorised the publication of a solution of 6th February I958, authorised the publication of a Yearbook Yearbook of of the the European European Convention Convention on on Human Human Rights. Rights. The The present present Volume Volume of of the the Yearbook Yearbook is is t
作者: 地名詞典    時(shí)間: 2025-3-26 19:27

作者: 不吉祥的女人    時(shí)間: 2025-3-27 00:44
Cerebral Palsys of the term. Despite these misgivings, CP does exist. There are common understandings of its definition, a generally accepted classification system, increasing knowledge about its etiology, a body of knowledge about its epidemiology, and increasing numbers of treatment options.
作者: falsehood    時(shí)間: 2025-3-27 01:17
Erectile Dysfunction,discussion on the current EAU guidelines on erectile dysfunction. Subsequently, an overview of the essential steps during sexual clinical examination is given and we underline the importance of erectile dysfunction as a predictor of future cardiovascular events. Clinical treatment of erectile dysfun
作者: nurture    時(shí)間: 2025-3-27 05:29

作者: 太空    時(shí)間: 2025-3-27 11:30

作者: Pander    時(shí)間: 2025-3-27 15:03
https://doi.org/10.1007/978-1-349-16831-6he malicious server (behave correctly and not be detected by clients vs returning a wrong register value to clients with the risk of being detected and then excluded by the computation). We prove such equilibrium exists and finally we design a protocol implementing the regular register that forces the rational malicious server to behave correctly.
作者: 群島    時(shí)間: 2025-3-27 20:56
MNCs and the Transformation of Bulgarian Employment Relationseeded in raising industrial relations norms to those of the ESM. In some countries these partnerships are more a ‘fa?ade’ with negligible influence on economic outcomes (Martin and Cristescu-Martin, 2004: 635).
作者: Homocystinuria    時(shí)間: 2025-3-28 00:10

作者: FAST    時(shí)間: 2025-3-28 05:30
Konrad Mengel,Ernest A. Kirkby,Harald Kosegarten,Thomas Appel. What’s more, section two briefly examines?the embryology and development ofthe organ systems, such as the development of major organs..This new edition is again an invaluable resource for students who wish to retain anatomical knowledge on the entire human body despite an eventual career in one pa
作者: 旋轉(zhuǎn)一周    時(shí)間: 2025-3-28 06:29

作者: 紋章    時(shí)間: 2025-3-28 12:20

作者: AWE    時(shí)間: 2025-3-28 18:30
ralgien.Mit Fragebogen und Checklisten, über 450 AbbildungenDas umfassende Standardwerk über Kopfschmerzen liegt nun in der aktualisierten Auflage vor! Aktuelle Forschungsergebnisse über Ursachen und Entstehung, M?glichkeiten der Diagnostik und Klassifikation sind in übersichtlicher Form dargestellt
作者: oncologist    時(shí)間: 2025-3-28 22:30
Slavery and the Development of Demographic Theory in the Age of the Industrial Revolution,vious to contemporaries, and played an important role in the development of anti-slavery ideology. The absolute decline in the slave population laid bare the anomalous character of the West Indian socio-economic system.
作者: Arboreal    時(shí)間: 2025-3-29 00:41
Die Entwicklung der Kommunikation zwischen Mensch und Maschine,n hat. Der Mensch, der die Maschine bedient, steuert und überwacht, wird mehr und mehr von ausführenden Arbeiten entlastet. Die Materialzufuhr, der Transport der Zwischenprodukte sowie die Lagerhaltung der Fertigprodukte werden in den Automationsproze? eingeschlossen, es entsteht die automatische Fabrik.




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