作者: 付出 時(shí)間: 2025-3-21 21:31
Political Obligation Reconsidered,luence of impurities on the morphological stability of an echelon of elementary steps since few microscopic studies of surface relief have been performed . and the sensitivity of the method is often insufficient.作者: 無意 時(shí)間: 2025-3-22 02:14 作者: 山頂可休息 時(shí)間: 2025-3-22 07:47
Influence of Impurities on Growth Kinetics and Morphology of Prismatic Faces of ADP and KDP Crystalsluence of impurities on the morphological stability of an echelon of elementary steps since few microscopic studies of surface relief have been performed . and the sensitivity of the method is often insufficient.作者: 類似思想 時(shí)間: 2025-3-22 09:02 作者: 偏狂癥 時(shí)間: 2025-3-22 13:51
Political Legitimacy beyond Weberses occurring in adsorption layers require knowledge of the adsorption energy, the surface potential relief relative to adparticles, and changes in the geometric and energetic characteristics of molecules on adsorption [.–.].作者: 偏狂癥 時(shí)間: 2025-3-22 20:29
Discussion, Conclusion & Outlook,es of MBE were used as a basis for construction of new instruments and for improvement of the characteristics of those already existing. Progress in this area suggests that MBE will enable in the future a new fundamental basis for microelectronics to be found. In particular, three-dimensional integrated circuits will become feasible.作者: Nostalgia 時(shí)間: 2025-3-22 23:44 作者: 填滿 時(shí)間: 2025-3-23 02:35 作者: 嬰兒 時(shí)間: 2025-3-23 06:25 作者: conformity 時(shí)間: 2025-3-23 11:23
Quantum-Chemical Investigation of Adsorption and Surface Migration of Atoms and Molecules on Si(111)ses occurring in adsorption layers require knowledge of the adsorption energy, the surface potential relief relative to adparticles, and changes in the geometric and energetic characteristics of molecules on adsorption [.–.].作者: 輕而薄 時(shí)間: 2025-3-23 17:22
Molecular-Beam Epitaxy of Silicones of MBE were used as a basis for construction of new instruments and for improvement of the characteristics of those already existing. Progress in this area suggests that MBE will enable in the future a new fundamental basis for microelectronics to be found. In particular, three-dimensional integrated circuits will become feasible.作者: cogent 時(shí)間: 2025-3-23 18:40
Aggregation of Point Defects in Silicon Crystals Growing from the Meltimpurity, oxygen, has a concentration 10.-10. cm. for Si grown without a crucible and 10. cm. for that grown by the Czochralski method [.]. The carbon concentration [.] varies over a wide range and can reach 5.10. cm.. Rapidly diffusing metallic impurities (iron and others) can have concentrations 10. cm. and greater [.].作者: 初次登臺(tái) 時(shí)間: 2025-3-24 01:59 作者: 反復(fù)無常 時(shí)間: 2025-3-24 05:31
Mischa Hansel,Henrike Viehrig,Danae Ankeled semiconducting structures (MSS). A particular case of these are superlattices (SL) consisting of thick layers of one or several mono-layers. Superlattices are actually a new class of materials with a regular band structure. This holds great promise for developments in microelectronics.作者: 微枝末節(jié) 時(shí)間: 2025-3-24 09:53 作者: 虛情假意 時(shí)間: 2025-3-24 13:44
Molecular Epitaxy of A3B5 Compoundsed semiconducting structures (MSS). A particular case of these are superlattices (SL) consisting of thick layers of one or several mono-layers. Superlattices are actually a new class of materials with a regular band structure. This holds great promise for developments in microelectronics.作者: LAITY 時(shí)間: 2025-3-24 14:57 作者: 洞察力 時(shí)間: 2025-3-24 22:45
beam epitaxy (MBE), which requires an atomically pure surface with the required structure and micromorphology. This is necessary to control the flux density for adatoms and to determine the formation mechanisms of submonolayer coatings and structural reconstructions during preparation of epitaxial films [.–.].作者: Indigence 時(shí)間: 2025-3-25 01:22
https://doi.org/10.1057/9780230116689w thinner and thinner (quantum-well) films, nonequilibrium processes occurring at the liquid-solid interface become an important part of the whole process of epitaxial growth. They determine the initial stages of formation and the structural and electrophysical properties of such a heterostructure.作者: 協(xié)奏曲 時(shí)間: 2025-3-25 04:49 作者: 雄偉 時(shí)間: 2025-3-25 09:47
Mechanism of Relaxation of the Nonequilibrium Liquid—Solid Interface before Liquid-Phase Heteroepitaw thinner and thinner (quantum-well) films, nonequilibrium processes occurring at the liquid-solid interface become an important part of the whole process of epitaxial growth. They determine the initial stages of formation and the structural and electrophysical properties of such a heterostructure.作者: 衍生 時(shí)間: 2025-3-25 13:14 作者: NADIR 時(shí)間: 2025-3-25 17:19 作者: FRAX-tool 時(shí)間: 2025-3-25 21:55
Step Kinetics on Crystal Surfaces in the Presence of Anisotropy and Impuritiesions. An experimental technique has recently appeared that enables the dislocation structure [.] or surface relief to be observed at the level of monatomic steps [.]. Thus, extremely fine details can be studied.作者: FECT 時(shí)間: 2025-3-26 03:21
High-Resolution Transmission Electron Microscopic Study of Epitaxial Layersates by various methods can be studied. The layers can be investigated at different stages of growth. The atomic structure of the interface can be characterized. The method of compensating the structural misfit of the layer with the substrate is revealed. The effect of several technical factors can be found.作者: 庇護(hù) 時(shí)間: 2025-3-26 05:18
https://doi.org/10.1007/978-3-319-70755-6A new class of semiconducting structures with .-doped layers and a high concentration of layered quasi-two-dimensional charge carriers is currently of great interest. On one hand these layers have interesting physical properties, on the other they are promising for practical applications [.].作者: arsenal 時(shí)間: 2025-3-26 11:07 作者: Hla461 時(shí)間: 2025-3-26 15:41
-Structures in Gallium ArsenideA new class of semiconducting structures with .-doped layers and a high concentration of layered quasi-two-dimensional charge carriers is currently of great interest. On one hand these layers have interesting physical properties, on the other they are promising for practical applications [.].作者: disrupt 時(shí)間: 2025-3-26 18:59 作者: 雪上輕舟飛過 時(shí)間: 2025-3-26 22:45
France: Presidential Leadership,ace state during growth of single crystals from fluxes or the vapor phase onto a substrate. However, the average does not always coincide with the local concentration not only in the bulk but also at the surface. Moreover, the interfacial concentration is known [. –.] to depend nonlinearly on the st作者: 含沙射影 時(shí)間: 2025-3-27 02:01 作者: N防腐劑 時(shí)間: 2025-3-27 06:18 作者: CHIDE 時(shí)間: 2025-3-27 12:53
State Legitimacy and Social Orderates by various methods can be studied. The layers can be investigated at different stages of growth. The atomic structure of the interface can be characterized. The method of compensating the structural misfit of the layer with the substrate is revealed. The effect of several technical factors can 作者: obtuse 時(shí)間: 2025-3-27 16:24 作者: sultry 時(shí)間: 2025-3-27 21:28 作者: Cerumen 時(shí)間: 2025-3-28 00:54
Mischa Hansel,Henrike Viehrig,Danae Ankelyered films with unique characteristics can now be obtained. The most important achievement of MBE is the possibility of fabricating so-called modulated semiconducting structures (MSS). A particular case of these are superlattices (SL) consisting of thick layers of one or several mono-layers. Superl作者: Mortal 時(shí)間: 2025-3-28 03:46 作者: braggadocio 時(shí)間: 2025-3-28 08:21
Political Obligation Reconsidered,oncepts of the mechanism of action of impurities are defined by essentially three phenomena. The impurity decreases the number of sites for adding building blocks by entering kinks It stops the step from turning by adsorbing to the surface. This increases the curvature of the step and reduces its ve作者: 向宇宙 時(shí)間: 2025-3-28 11:08
Political Opinion Polling in Germany,rrites, laser materials [.–.], and, starting in 1987, the rediscovered high-temperature superconductors [.] are prepared by crystallization from fluxes. Spontaneous crystallization is the most widely used method at present. This is due to its use as the first step in searching for new crystals of co作者: 率直 時(shí)間: 2025-3-28 15:20 作者: 修改 時(shí)間: 2025-3-28 21:41 作者: Bernstein-test 時(shí)間: 2025-3-29 00:06
Power and the Analysis of Political Parties,rystal, melt, and particle surface energies .., .., .., the particles can be steadily repulsed by the crystal [., .]. There exists a certain critical velocity .., below which repulsion is possible and above which the particle can be captured. The absolute value of .. depends substantially on the mel作者: Volatile-Oils 時(shí)間: 2025-3-29 06:01 作者: 生命 時(shí)間: 2025-3-29 10:29
Quantum-Chemical Investigation of Adsorption and Surface Migration of Atoms and Molecules on Si(111)crystals and epitaxial layers of semiconductors. Two phases come into contact through an adsorption layer in gas-transport systems and during molecular-beam growth. Processes occurring in the adsorption layers (adsorption, desorption, surface diffusion, possible chemical reactions) are known to cont作者: hypnogram 時(shí)間: 2025-3-29 13:35
Step Kinetics on Crystal Surfaces in the Presence of Anisotropy and Impuritiesions. An experimental technique has recently appeared that enables the dislocation structure [.] or surface relief to be observed at the level of monatomic steps [.]. Thus, extremely fine details can be studied.作者: Nonthreatening 時(shí)間: 2025-3-29 17:42 作者: Hiatus 時(shí)間: 2025-3-29 20:37
Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxyrs. The determination of the nature of superstructure reconstructions, the structure of surface defects, the kinetics of adatoms, and the mechanisms of interaction with troughs are some of these processes [.–.]. The solution of these problems is especially important for the development of molecular-作者: CLAM 時(shí)間: 2025-3-30 03:24
Molecular-Beam Epitaxy of Siliconurate control of their thickness, composition, and doping level. These capabilities enable thin multilayered structures with strictly controlled composition and very sharp doping profiles to be obtained with high reproducibility [.–.]. Moreover, the number of heterostructures available by this metho作者: indemnify 時(shí)間: 2025-3-30 04:18 作者: ABOUT 時(shí)間: 2025-3-30 10:34
Epitaxy of Solid Solutions and Multilayered Structures in the System Cd—Hg—Te as the most promising for fabricating photodetectors using “band engineering.” With respect to the structural and electrophysical parameters of the CMT films, all common epitaxial methods give the same excellent results. The carrier mobility in .-type Cd.Hg.Te reaches .. ≥ 2 ·10. cm. ?V/sec at a co作者: 點(diǎn)燃 時(shí)間: 2025-3-30 13:58 作者: GREEN 時(shí)間: 2025-3-30 20:26 作者: HALL 時(shí)間: 2025-3-30 21:11
Mechanism of Relaxation of the Nonequilibrium Liquid—Solid Interface before Liquid-Phase Heteroepitae contacting phases. The importance of understanding processes occurring at the nonequilibrium interface is obvious. Such contact is used both in preparation for epitaxial growth from the liquid and in production of the heterostructures themselves. In light of the tendency in all Technologies to gro作者: 挫敗 時(shí)間: 2025-3-31 00:59
Aggregation of Point Defects in Silicon Crystals Growing from the Meltgrowth microdefects are obviously due to intrinsic point defects (IPD) generated at the crystallization temperature .. that persist during cooling and are not annealed at dislocation pileups but form various aggregates (clusters). The IPD equilibrium concentration in Si is relatively low [.], of the作者: Boycott 時(shí)間: 2025-3-31 07:46 作者: A精確的 時(shí)間: 2025-3-31 09:45
