作者: 自負(fù)的人 時間: 2025-3-21 21:37
Revised Phase Diagrams of LiF-RF3 (R = La-Lu, Y) Systems,mmercial laser crystals. Crystal production preceded investigations of phase equilibria in LiF -RF. systems (see below). Since the early 1970s LiRF4 crystals were included in searches for new REE compounds needed to solve problems in quantum electronics.作者: 現(xiàn)存 時間: 2025-3-22 02:44
https://doi.org/10.1007/978-3-030-56036-2 Its strength decreases with increasing porosity. However, the crystal structure of Si within the porous layer is nearly identical to that of Si without pores. It has been noted [9] that the x-ray rocking curves of porous and nonporous Si are very similar. Immediately after anodic etching the lattic作者: 評論者 時間: 2025-3-22 08:05 作者: Nibble 時間: 2025-3-22 10:38 作者: Concomitant 時間: 2025-3-22 13:01 作者: Concomitant 時間: 2025-3-22 19:43
adients, variation of the crystal and/or crucible rotation rate, and maintenance of a certain melt level [3, 4]. Methods of external control include various types of magnetohydrodynamic (MHD) influences on the melt [5]. However, this is applicable only to a limited range of materials that possess metallic conductivity in the molten state.作者: Flavouring 時間: 2025-3-22 21:36 作者: gentle 時間: 2025-3-23 04:31 作者: Pantry 時間: 2025-3-23 06:12
Vibrational Control of Czochralski Crystal Growth,adients, variation of the crystal and/or crucible rotation rate, and maintenance of a certain melt level [3, 4]. Methods of external control include various types of magnetohydrodynamic (MHD) influences on the melt [5]. However, this is applicable only to a limited range of materials that possess metallic conductivity in the molten state.作者: 預(yù)測 時間: 2025-3-23 10:35
Theories of Political Disobedience,ar, statistical correlations between elementary events occurring at step kinks may play an important role in the growth of semiconductor materials by MBE (molecular-beam epitaxy) and CVD (chemical vapor deposition).作者: 表狀態(tài) 時間: 2025-3-23 14:23 作者: candle 時間: 2025-3-23 18:02
The Functioning of Market and Competition,the structure of the layers is perfect enough, new practical properties may be utilized in conjunction with, for example, modification of the heterojunction band structure or the creation in InGaAs(111) layers of an intrinsic piezoelectric field [3].作者: Peristalsis 時間: 2025-3-23 23:51
1820: A Campaign for Free Trade, The crystal orientation can change quite significantly if the defect density is high. Until now, studies of the change of crystal orientation during pulling have been limited to an examination of twinning effects.作者: aesthetic 時間: 2025-3-24 04:52 作者: Congruous 時間: 2025-3-24 09:50 作者: URN 時間: 2025-3-24 13:56 作者: 拉開這車床 時間: 2025-3-24 17:07 作者: 啞劇 時間: 2025-3-24 19:14
https://doi.org/10.1007/978-3-030-63325-7 optoelectronics [1, 2]. In particular, it has been used to fabricate permeable-base UHF transistors [4] and low-loss optical waveguides [4] and to reduce the cost of epitaxial layers for solar energy applications [5].作者: cluster 時間: 2025-3-25 00:51 作者: Stress-Fracture 時間: 2025-3-25 06:02 作者: acheon 時間: 2025-3-25 09:29
Philip Arestis,Alfredo Saad-Filhoation distribution over crystallographically nonequivalent atomic positions and the shape (distortion) of the coordination polyhedra, plays a decisive role in determining the laser properties of the crystals and the conditions for their successful growth.作者: GRAVE 時間: 2025-3-25 15:17 作者: TAP 時間: 2025-3-25 19:53
Morphological Instability and Inclusion Formation During Crystal Growth from a Flowing Solution, the solution moves relative to the crystal. The diffusion conditions in the boundary layer have a strong influence on the perfection of the growing crystal since they can cause morphological instability to develop. This often leads to liquid inclusions.作者: Nibble 時間: 2025-3-25 23:54 作者: 濃縮 時間: 2025-3-26 01:50 作者: 致詞 時間: 2025-3-26 05:49
Political Ecology of AgricultureHeterostructures A.B. /A.B.are valuable materials for semiconductor electronics that are employed especially in the fabrication of various photoactive devices.作者: 險代理人 時間: 2025-3-26 10:57
German Macroeconomic Thought and Its EffectsEutectic thin films of various microstructure are widely employed in metallurgy, machinery, and microelectronics [1]. Liquid-phase growth methods are used for preparing them as commonly as vapor-phase methods. An example is the preparation of protective coatings by rapid cooling of a melt layer [1, 2].作者: Interim 時間: 2025-3-26 14:03 作者: 問到了燒瓶 時間: 2025-3-26 18:45
Heteroepitaxy of Heterovalent Compounds: Molecular Beam Deposition of ZnSe on GaAs,Heterostructures A.B. /A.B.are valuable materials for semiconductor electronics that are employed especially in the fabrication of various photoactive devices.作者: 傲慢人 時間: 2025-3-26 21:45 作者: Dri727 時間: 2025-3-27 04:27 作者: Ornament 時間: 2025-3-27 07:02 作者: COKE 時間: 2025-3-27 11:31
Gas-Phase Growth Kinetics and Morphology of Lead and Germanium Telluride Crystals,ntrolled production of crystals with a given composition and the required properties. Crystal growth is investigated using both kinetic and morphologic principles. The former relates the growth rate to the experimental conditions (temperature, source material composition, vapor composition and press作者: 服從 時間: 2025-3-27 17:01 作者: Abbreviate 時間: 2025-3-27 18:10
Growth and Structure of Si Epilayers on Porous Si,pecially after converting the three-layer system into a Si-on-insulator structure via oxidation of the porous sublayer [1-8]. Anodic etching regimes enabling the surface layer of p+-type Si to be converted into a porous material with a significant pore volume are known. The physical properties of po作者: obeisance 時間: 2025-3-27 21:57
Effect of Crystallographic Orientation of the Interface on the Growth of Perfect Epitaxial Layers oe misfit parameters are relieved [1]. These stresses are related to the fact that the Burgers vectors of similar misfit dislocations (MDs) have screw components [2, 3]. The LSSs can influence the microstructure of the epitaxial layer and should be considered when choosing the growth conditions. The 作者: 增長 時間: 2025-3-28 05:20 作者: 定點 時間: 2025-3-28 06:18
Self-Sustained Nuclei-Assisted Explosive Crystallization,rol the process increase with increasing temperature. Thus, the amorphous phase converts to the crystalline one faster as the release rate of latent heat of crystallization increases (a system with a positive feedback). As a result, explosive crystallization can occur in which the conversion rate ju作者: Obituary 時間: 2025-3-28 10:52 作者: Constant 時間: 2025-3-28 17:29 作者: 影響深遠(yuǎn) 時間: 2025-3-28 21:54
Block Formation and Crystallographic Orientation Changes During Growth of Shaped Sapphire Single Crsts if the crystal grows ideally enough. However, crystals often contain structural defects such as dislocations and their pileups, slip bands, and intergrain boundaries. Each of these defects is connected with a certain distortion of the crystal lattice. As a result, the orientation of the grown cr作者: acetylcholine 時間: 2025-3-29 02:44
Revised Phase Diagrams of LiF-RF3 (R = La-Lu, Y) Systems,on of LiRF. single crystals and lithium yttrium fluoride (LYF) in quantum electronics [1, 2]. This family contains members that exhibit excellent processing characteristics in addition to a high capacity for isomorphous replacement by trivalent REE ions. These characteristics include, among others, 作者: remission 時間: 2025-3-29 03:23 作者: Brain-Waves 時間: 2025-3-29 07:38 作者: aristocracy 時間: 2025-3-29 13:19
Theories of Political Disobedience,ution in thin layers of binary semiconductors result from specific features of the incorporation of host and impurity atoms at kink sites. In particular, statistical correlations between elementary events occurring at step kinks may play an important role in the growth of semiconductor materials by 作者: laceration 時間: 2025-3-29 18:23 作者: 鋼盔 時間: 2025-3-29 22:37 作者: intuition 時間: 2025-3-30 00:40 作者: motor-unit 時間: 2025-3-30 05:01
https://doi.org/10.1007/978-3-319-64556-8e misfit parameters are relieved [1]. These stresses are related to the fact that the Burgers vectors of similar misfit dislocations (MDs) have screw components [2, 3]. The LSSs can influence the microstructure of the epitaxial layer and should be considered when choosing the growth conditions. The 作者: myriad 時間: 2025-3-30 12:16 作者: 橢圓 時間: 2025-3-30 15:41 作者: botany 時間: 2025-3-30 17:54
Working with Uncertainty in the IT Industry, the solution moves relative to the crystal. The diffusion conditions in the boundary layer have a strong influence on the perfection of the growing crystal since they can cause morphological instability to develop. This often leads to liquid inclusions.作者: Evolve 時間: 2025-3-31 00:03
The Reforms and Systemic Changere parallel to a growing face and have slightly differing lattice constants. Significant strains develop at the boundaries between these layers (zone boundaries). These strains can be large enough to produce dislocations. Striation is a defect that degrades the optical quality of crystals.作者: 嘴唇可修剪 時間: 2025-3-31 03:36
1820: A Campaign for Free Trade,sts if the crystal grows ideally enough. However, crystals often contain structural defects such as dislocations and their pileups, slip bands, and intergrain boundaries. Each of these defects is connected with a certain distortion of the crystal lattice. As a result, the orientation of the grown cr作者: 痛打 時間: 2025-3-31 08:56
Bhabani Shankar Nayak,Nigel Waltonon of LiRF. single crystals and lithium yttrium fluoride (LYF) in quantum electronics [1, 2]. This family contains members that exhibit excellent processing characteristics in addition to a high capacity for isomorphous replacement by trivalent REE ions. These characteristics include, among others,
