標(biāo)題: Titlebook: ; [打印本頁(yè)] 作者: postpartum 時(shí)間: 2025-3-21 18:43
書(shū)目名稱Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors影響因子(影響力)
書(shū)目名稱Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors影響因子(影響力)學(xué)科排名
書(shū)目名稱Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors被引頻次
書(shū)目名稱Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors被引頻次學(xué)科排名
書(shū)目名稱Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors年度引用
書(shū)目名稱Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors年度引用學(xué)科排名
書(shū)目名稱Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors讀者反饋
書(shū)目名稱Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors讀者反饋學(xué)科排名
作者: EXALT 時(shí)間: 2025-3-21 23:30 作者: Nmda-Receptor 時(shí)間: 2025-3-22 02:42 作者: 辯論 時(shí)間: 2025-3-22 08:00
Excitonic Complexes in Wide-Gap II-VI Semiconductorsh allows for the development of comprehensive term schemes for neutral-impurity-exciton complexes in II–VI’s. Mainly three types of excited states exist for bound-exciton complexes: (i) states which are described through electronic excitation of one electron or hole, while the other particles involv作者: 有機(jī)體 時(shí)間: 2025-3-22 11:27 作者: Oscillate 時(shí)間: 2025-3-22 13:15 作者: Oscillate 時(shí)間: 2025-3-22 20:31
Beverley Radcliffe,Jane Shackmanublished during the last years in this field [Schulz 82 and 87, Zunger 86] dealing especially with transition metals in II–VI-compounds. The reader is refered to these publications. It is therefore not the aim of this paper to cover the field of impurities in II–VIs entirely, but to discuss some gen作者: anagen 時(shí)間: 2025-3-23 00:48
https://doi.org/10.1007/978-1-4615-1559-3 laser diodes for high density memory and printing systems, one must rely on the wider-bandgap materials. Wide gap II–VI compounds, such as ZnSe, ZnS and ZnSSe, have long been expected as candidates for the purposes.作者: Oscillate 時(shí)間: 2025-3-23 03:07 作者: vibrant 時(shí)間: 2025-3-23 09:19
Inclusive Education in Trinidad and Tobago,h allows for the development of comprehensive term schemes for neutral-impurity-exciton complexes in II–VI’s. Mainly three types of excited states exist for bound-exciton complexes: (i) states which are described through electronic excitation of one electron or hole, while the other particles involv作者: 有限 時(shí)間: 2025-3-23 13:28 作者: 出汗 時(shí)間: 2025-3-23 15:39
Elaborating the Horizon Framework,uctures grown by MBE and MOCVD are discussed. The combination of the low temperature growth and the choice of purer source materials has resulted in decreased background impurity concentration to the extent that meaningful optical and electrical experiments can be performed. These improvements in th作者: 依法逮捕 時(shí)間: 2025-3-23 21:57
Ildefonso Hernández-Aguado,Lucy Anne Parkerunds. The thin film electroluminescent structure, schematically shown in fig. 1, is almost ideal for a flat panel display. Light is generated in a less than 2 μm thick thin film stack, which is deposited on a glass substrate. The light emitting film is deposited between two insulating films, and the作者: 抗原 時(shí)間: 2025-3-24 02:06
Richard R. Reilly,Michael A. Wareche current applications of laser diodes to the recording and reproduction of data. In this paper, we discuss the prospects for realising a “blue shift” in technology, away from III–V and towards II–VI materials. Recent rapid advances. in the chemical and structural control of II–VI compounds, superla作者: ETHER 時(shí)間: 2025-3-24 04:14 作者: Ballerina 時(shí)間: 2025-3-24 09:51 作者: 緯度 時(shí)間: 2025-3-24 11:58 作者: 掃興 時(shí)間: 2025-3-24 16:11 作者: installment 時(shí)間: 2025-3-24 19:54
https://doi.org/10.1007/978-3-030-66018-5 elements (O, S, Se, Te) has been recognised for a long time.. These materials are known to have band gaps which are compatible with emission in the visible region of the electromagnetic spectrum and to exhibit non-linear optical effects.. These properties are currently being investigated in applica作者: 恭維 時(shí)間: 2025-3-25 02:41
https://doi.org/10.1007/978-3-030-96953-0ct fundamental transition. Many different ternary and quaternary solid solutions based upon ZnTe are prepared by alloying with another II–VI compound like CdTe, CdSe, HgTe... or with a VI–VII material like MnSe or MnTe. In the present paper, we shall focus particularly on the ternary alloys Hg. Zn. 作者: 美色花錢(qián) 時(shí)間: 2025-3-25 04:14
n either the cubic zincblende (sphalerite) or the hexagonal wurtzite structures, in which the metal ion is surrounded tetrahedrally by four chalcogen ions. Many of the important properties derive from the tetrahedral bonding and the valency. Band structure calculations, have established that the zin作者: Servile 時(shí)間: 2025-3-25 09:16
Beverley Radcliffe,Jane Shackman of matter, of vibrational states and of energy transport in crystals. Moreover the incorporation of impurities and their special behaviour is decisive for most of the technical devices based on II–VI-compounds. Besides of the luminescence many new experimental techniques have emerged during the las作者: 牽索 時(shí)間: 2025-3-25 14:16 作者: Limpid 時(shí)間: 2025-3-25 17:31 作者: Pruritus 時(shí)間: 2025-3-25 22:45 作者: heckle 時(shí)間: 2025-3-26 03:45 作者: 策略 時(shí)間: 2025-3-26 05:52 作者: CAMP 時(shí)間: 2025-3-26 11:35 作者: reject 時(shí)間: 2025-3-26 15:44 作者: 主動(dòng)脈 時(shí)間: 2025-3-26 17:42
Policy-Forschung und Politische Psychologiecturing process the crystallites can be between 2 and 10 nm in size and up to 0.1% of the total volume. They appear to be randomly orientated in the glass and of a fairly uniform size distribution. Due to the optical absorption characteristics of the semiconductor crystallites these glasseshave a sh作者: 來(lái)就得意 時(shí)間: 2025-3-26 22:17 作者: Forage飼料 時(shí)間: 2025-3-27 04:20
Recent Development Trends in Thin Film Electroluminescent Displaysunds. The thin film electroluminescent structure, schematically shown in fig. 1, is almost ideal for a flat panel display. Light is generated in a less than 2 μm thick thin film stack, which is deposited on a glass substrate. The light emitting film is deposited between two insulating films, and the作者: CAND 時(shí)間: 2025-3-27 09:12 作者: 拋媚眼 時(shí)間: 2025-3-27 09:41
Blue Electroluminescent Devices Based on Low Resistive p-Type ZnSeort agents. The ZnSe layers exhibited a p-type conductivity up to 50 (Ωcm). and a net carrier concentration of 4×10. cm. together with a Hall mobility of 100 cm. /Vs at room temperature. These values are the highest ones reported so far.作者: averse 時(shí)間: 2025-3-27 14:43
Prospects for II-VI Heterojunction Light Emitting Diodesy, which is the subject of this paper, is to join a p-type II–VI to an n-type II–VI to form a heterojunction (HJ). The HJ approach has been tried for over 20 years and has been quite successful in making pn junctions in these materials.作者: 輕浮女 時(shí)間: 2025-3-27 18:25 作者: Homocystinuria 時(shí)間: 2025-3-27 22:43 作者: 彎曲的人 時(shí)間: 2025-3-28 05:24
The Growth of Thin Layers by MOCVD of Wide Band Gap II-VI Compounds elements (O, S, Se, Te) has been recognised for a long time.. These materials are known to have band gaps which are compatible with emission in the visible region of the electromagnetic spectrum and to exhibit non-linear optical effects.. These properties are currently being investigated in applica作者: Magnificent 時(shí)間: 2025-3-28 07:10
Optical Studies of ZnXTe(X=Mn,Hg) Alloysct fundamental transition. Many different ternary and quaternary solid solutions based upon ZnTe are prepared by alloying with another II–VI compound like CdTe, CdSe, HgTe... or with a VI–VII material like MnSe or MnTe. In the present paper, we shall focus particularly on the ternary alloys Hg. Zn. 作者: neologism 時(shí)間: 2025-3-28 14:02 作者: 不要不誠(chéng)實(shí) 時(shí)間: 2025-3-28 17:33
Some Aspects of Impurities in Wide Band Gap II-VI Compounds of matter, of vibrational states and of energy transport in crystals. Moreover the incorporation of impurities and their special behaviour is decisive for most of the technical devices based on II–VI-compounds. Besides of the luminescence many new experimental techniques have emerged during the las作者: mitral-valve 時(shí)間: 2025-3-28 20:34 作者: aesthetic 時(shí)間: 2025-3-29 02:10
Photoassisted Doping of II-VI Semiconductor Filmsled substitutional doping of II–VI compound semiconductors. Substitutional doping of these materials has been a long standing problem which has severely limited their applications potential. The PAMBE technique gives rise to dramatic changes in the electrical properties of as-grown epilayers. In par作者: 可憎 時(shí)間: 2025-3-29 06:32
Excitonic Complexes in Wide-Gap II-VI Semiconductors–VI semiconductors. Thus, tremendous efforts have been made to find out and describe excited states of free and, particularly, bound-exciton complexes, their excitation and decay mechanisms, and related scattering phenomena. This paper surveys recent results regarding bound-exciton complexes and the作者: Expiration 時(shí)間: 2025-3-29 11:04 作者: Gastric 時(shí)間: 2025-3-29 13:42 作者: 缺陷 時(shí)間: 2025-3-29 17:18 作者: COKE 時(shí)間: 2025-3-29 20:31 作者: 暴露他抗議 時(shí)間: 2025-3-30 01:58 作者: cortisol 時(shí)間: 2025-3-30 06:24 作者: 分開(kāi) 時(shí)間: 2025-3-30 09:21 作者: nuclear-tests 時(shí)間: 2025-3-30 14:04 作者: compassion 時(shí)間: 2025-3-30 19:16 作者: 得意人 時(shí)間: 2025-3-31 00:40 作者: 顯赫的人 時(shí)間: 2025-3-31 04:23
Migration Policies in the EU and Spain, ideas of the linear optical properties. The next one is devoted to the description of various optical nonlinearities and of the underlying concepts. In an outlook we finally summarize, how optical nonlinearities can be used to realize pure optical bistability, electro-optic hybrid devices, optical amplifiers or optical oscillators.作者: 要塞 時(shí)間: 2025-3-31 05:22
Blue Electroluminescent Devices Based on Low Resistive p-Type ZnSeort agents. The ZnSe layers exhibited a p-type conductivity up to 50 (Ωcm). and a net carrier concentration of 4×10. cm. together with a Hall mobility of 100 cm. /Vs at room temperature. These values are the highest ones reported so far.作者: vasospasm 時(shí)間: 2025-3-31 09:31
Prospects for II-VI Heterojunction Light Emitting Diodesy, which is the subject of this paper, is to join a p-type II–VI to an n-type II–VI to form a heterojunction (HJ). The HJ approach has been tried for over 20 years and has been quite successful in making pn junctions in these materials.作者: CLAM 時(shí)間: 2025-3-31 14:58
II-VI Heterostructures and Multi-Quantum Wellsnd to fabricate visible light emitters. Heteroep it axial structures are one of the promising approaches. The more interesting cases involve heavy strain and require particular values of the band offsets. We review recent work on CdTe/ZnTe and ZnSe/ZnTe multiquantum well structures.作者: Keratin 時(shí)間: 2025-3-31 17:43 作者: 智力高 時(shí)間: 2025-3-31 22:05 作者: painkillers 時(shí)間: 2025-4-1 04:36 作者: Abbreviate 時(shí)間: 2025-4-1 07:21
c and cadmium compounds are all direct semiconductors. Thus the need to conserve crystal momentum does not inhibit band-to-band radiative recombination and the II–VI semiconducting compounds are efficient emitters and detectors of light. It was as phosphors for CRT displays that these materials first found application.作者: conspicuous 時(shí)間: 2025-4-1 10:39 作者: Mortar 時(shí)間: 2025-4-1 14:57
A Review of the Growth of 3D II-VI Compoundsso had some interesting developments, showing significant increases in rate, due, apparently, to the use of hydrogen as a transport agent. Other techniques have not kept pace with developments in melt and vapor growth.作者: 擋泥板 時(shí)間: 2025-4-1 18:46 作者: CHIDE 時(shí)間: 2025-4-2 02:25
Frequency Dependence of Interband Two-Photon Absorption Mechanisms in ZnO and ZnSrst experimental evidence of a dominant mechanism of forbidden-forbidden type has been obtained. Furthermore, the spectral behaviour of the TPA coefficient (α.) has been well described by a parametric formula containing terms (with different energy dependences) related to the above-mentioned different transition mechanisms.
