標題: Titlebook: Giant Magneto-Resistance Devices; Eiichi Hirota,Hirosi Sakakima,Koichiro Inomata Book 2002 Springer-Verlag Berlin Heidelberg 2002 Giant ma [打印本頁] 作者: Impacted 時間: 2025-3-21 17:51
書目名稱Giant Magneto-Resistance Devices影響因子(影響力)
書目名稱Giant Magneto-Resistance Devices影響因子(影響力)學科排名
書目名稱Giant Magneto-Resistance Devices網絡公開度
書目名稱Giant Magneto-Resistance Devices網絡公開度學科排名
書目名稱Giant Magneto-Resistance Devices被引頻次
書目名稱Giant Magneto-Resistance Devices被引頻次學科排名
書目名稱Giant Magneto-Resistance Devices年度引用
書目名稱Giant Magneto-Resistance Devices年度引用學科排名
書目名稱Giant Magneto-Resistance Devices讀者反饋
書目名稱Giant Magneto-Resistance Devices讀者反饋學科排名
作者: Overdose 時間: 2025-3-21 21:26
J?rgen Kristiansen,Pavel ?kaloudficial materials, such as, metal multilayers. The latter is the possibility of achieving high-density memory in hard disk drives (HDD) of computer peripherals. At present the introduction of GMR read heads in the HDD opens the door to the “Gb/in. memory era” and allows aerial recording densities (ARD) of up to 100 Gb/in..作者: extinguish 時間: 2025-3-22 01:53 作者: 山羊 時間: 2025-3-22 05:45
Physical Health and Fatherhood,ayers were investigated and have come into commerce recently. In this section, the physics of the exchange coupling, the mechanism of the GMR effect, the dependence of the MR properties on the multilayered structure, and the thermal stability of the MR ratios are discussed.作者: 隼鷹 時間: 2025-3-22 11:54 作者: gerontocracy 時間: 2025-3-22 14:15
Introduction to Modern Product Development,ic current results from a net drift of electrons, when each electron nudges the one next to it. But only a small fraction, about 1 in 1000 (.., τ/.. ~0.001), of these scattering events alters the spin state of the electron.作者: gerontocracy 時間: 2025-3-22 19:44
Other GMR Devices,ic current results from a net drift of electrons, when each electron nudges the one next to it. But only a small fraction, about 1 in 1000 (.., τ/.. ~0.001), of these scattering events alters the spin state of the electron.作者: AWL 時間: 2025-3-22 22:02 作者: 偶像 時間: 2025-3-23 03:19
Tunnel-Type GMR (TMR) Devices, quantum mechanics. The basic principle of TMR is the dependence of the tunneling probability on the relative orientation of magnetization in the two ferromagnetic electrodes. The tunneling conductance is spin dependent due to the spin dependent density of states (DOS) at the Fermi level for ferromagnets.作者: 責難 時間: 2025-3-23 07:21
Introduction,ficial materials, such as, metal multilayers. The latter is the possibility of achieving high-density memory in hard disk drives (HDD) of computer peripherals. At present the introduction of GMR read heads in the HDD opens the door to the “Gb/in. memory era” and allows aerial recording densities (ARD) of up to 100 Gb/in..作者: 減至最低 時間: 2025-3-23 13:46 作者: Forehead-Lift 時間: 2025-3-23 17:33
GMR Devices of Metallic Multilayers, the phenomenon, which has been attributed to the interlayer antiferromagnetic coupling between the magnetic layers across the nonmagnetic layers [3]. The GMR effect is attractive not only from the point view of basic physics, but also from the applicational point of view, as these metallic mulilaye作者: Insensate 時間: 2025-3-23 19:42
Spin-Valve Devices,on of the spin-valves to magnetic read heads. MR properties of two types of spin-valves, exchange-biased spin valves having an antiferromagnetic pinning layer and pseudo-spin-valves having a hard magnetic layer, are discussed in this section.作者: 用樹皮 時間: 2025-3-24 00:52 作者: 馬賽克 時間: 2025-3-24 05:49 作者: HAVOC 時間: 2025-3-24 08:17 作者: incredulity 時間: 2025-3-24 11:30 作者: 急性 時間: 2025-3-24 15:29 作者: BLAZE 時間: 2025-3-24 20:13 作者: 裝入膠囊 時間: 2025-3-25 02:20 作者: 弄皺 時間: 2025-3-25 03:38
Richard M. Stephenson,Stanislaw Malanowskis or straps. Magnetic elements were arrayed so that only those which were to be written to received a combination of magnetic fields above a write threshold, while the other elements in the array did not change storage state. Most of today’s MRAM concepts still use this technique.作者: 制度 時間: 2025-3-25 10:47 作者: PANT 時間: 2025-3-25 12:38
Sandra L. Baldauf,Joan E. StrassmannGMR and TMR devices have a basic common structure, namely, two ferromagnetic metal films separated magnetically by a nonmagnetic film. The difference between the structures of these devices is in the nonmagnetic spacer film which consists of a metal film (GMR) or an insulator film (TMR).作者: Sputum 時間: 2025-3-25 19:17
Physics of GMR and TMR Devices,GMR and TMR devices have a basic common structure, namely, two ferromagnetic metal films separated magnetically by a nonmagnetic film. The difference between the structures of these devices is in the nonmagnetic spacer film which consists of a metal film (GMR) or an insulator film (TMR).作者: terazosin 時間: 2025-3-25 21:20
Michael Massengale,Elise Choe,Don E. Davison of the spin-valves to magnetic read heads. MR properties of two types of spin-valves, exchange-biased spin valves having an antiferromagnetic pinning layer and pseudo-spin-valves having a hard magnetic layer, are discussed in this section.作者: 招致 時間: 2025-3-26 03:13
Richard M. Stephenson,Stanislaw Malanowskis or straps. Magnetic elements were arrayed so that only those which were to be written to received a combination of magnetic fields above a write threshold, while the other elements in the array did not change storage state. Most of today’s MRAM concepts still use this technique.作者: 怎樣才咆哮 時間: 2025-3-26 06:17 作者: Cupidity 時間: 2025-3-26 12:27 作者: 系列 時間: 2025-3-26 13:05 作者: figure 時間: 2025-3-26 18:42
Giant Magneto-Resistance Devices978-3-662-04777-4Series ISSN 0931-5195 Series E-ISSN 2198-4743 作者: 熔巖 時間: 2025-3-26 21:08
https://doi.org/10.1007/978-3-662-04777-4Giant magnetoresistance (GMR); Magnetic random access memory (MRAM); Magnetic sensor and head; Metal mu作者: 鋼筆尖 時間: 2025-3-27 02:04 作者: landmark 時間: 2025-3-27 06:12
Book 2002d of the multilayer, and for a low applied magnetic field magnetizations in the adjacent magnetic layers are in antiparallel, the GMR effect in magnetic metallic multilay- ers occurs due to the resistance change in the electric current flowing in the layer plain, with a change in the magnetization f作者: BILK 時間: 2025-3-27 11:40 作者: 確保 時間: 2025-3-27 17:06 作者: Encapsulate 時間: 2025-3-27 19:51
Ist die Besonderheit des St?dtischen auch die Besonderheit der Stadtsoziologie?obleme, die Frage zu beantworten. Erstens muss bestimmt werden, was die Besonderheit des St?dtischen überhaupt sein kann. Zweitens ist zu entscheiden, ob die herausgearbeitete Besonderheit auch den Kern der Stadtsoziologie bilden kann und soll. Zu wissen, welches die Besonderheit ist, besagt ja noch作者: rectum 時間: 2025-3-28 01:11
Arming Cordelia: Character and Performance Our preparation stands / In expectation of them” (4.3.22–23), suggesting that the soldiers she has led on stage are an indication of her readiness to battle her sisters’ armies. Given this preparation for battle, this show of power, and Cordelia’s position at the head of her army, it seems not unlikely that Cordelia herself appears in armor.作者: dainty 時間: 2025-3-28 02:14
