標(biāo)題: Titlebook: Generation, Detection and Processing of Terahertz Signals; Aritra Acharyya,Arindam Biswas,Palash Das Book 2022 The Editor(s) (if applicabl [打印本頁] 作者: endocarditis 時(shí)間: 2025-3-21 19:19
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書目名稱Generation, Detection and Processing of Terahertz Signals被引頻次
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書目名稱Generation, Detection and Processing of Terahertz Signals讀者反饋學(xué)科排名
作者: negotiable 時(shí)間: 2025-3-21 23:01
,Investigating Absorption Cross Section and Oscillator Strength for Double Quantum Well with P?schl-e intraband transition from ground to first excited state. Peak values of absorption cross section are noted which reflects active area for optical transitions has dimensions in sub-micron range. Structural parameters are varied to compute the possible variation of that cross section, taking into ac作者: chastise 時(shí)間: 2025-3-22 02:57 作者: interlude 時(shí)間: 2025-3-22 05:00
Investigation on Antennas for Terahertz Applications, Terahertz Interest Group in 2008. By its unique characteristics, THz technology indeed has the potential to provide very high-data rate for wireless communication system. However, the atmospheric absorption presents in THz communication system cause high path losses. Using high gain antennas can co作者: 好色 時(shí)間: 2025-3-22 12:01 作者: angiography 時(shí)間: 2025-3-22 16:27 作者: angiography 時(shí)間: 2025-3-22 20:19 作者: 油氈 時(shí)間: 2025-3-22 23:44 作者: diathermy 時(shí)間: 2025-3-23 02:14
THz Image Processing and Its Applications,regime between infrared and microwaves, bridging the gap amid optics and electronics is renowned as the THz. THz image processing deals with the interaction of matters in the sub-millimetre wavelength band (. 300?GHz to 3 THz) of a distinct electromagnetic spectrum indistinguishable from the other s作者: FORGO 時(shí)間: 2025-3-23 06:54 作者: CAND 時(shí)間: 2025-3-23 15:52
An Approximate Model for Analyzing Four-Terminal Lateral Single-Drift IMPATT-Based THz Radiators,l single-drift (SD) IMPATT sources. This model is suitable for both sub-terahertz frequency and terahertz (THz) frequency of operation of the device. The details of the model are presented in this chapter; however, the simulation results are omitted from here due to the limitations in availability o作者: 吹牛需要藝術(shù) 時(shí)間: 2025-3-23 21:48
On Some Modern Simulation Techniques for Studying THz ATT Sources,capability at the design spectrum before actual fabrication. Design and simulation of complex devices like THz avalanche transit time (ATT) diodes require comprehensive and accurate simulation model for small-signal, large-signal and noise simulation before the actual fabrication. This chapter is de作者: Postulate 時(shí)間: 2025-3-23 22:45 作者: 過份好問 時(shí)間: 2025-3-24 03:26
Search of a Suitable Heterojunction Material System for Terahertz Wave Generation,THz) power. Avalanche transit time (ATT) sources based on GaAs~Al.Ga.As, Si~3C-SiC and GaN~Al.Ga.N heterojunctions are simulated, and their performances are compared at a wide range of frequency spectrum. Out of those potential heterostructures, GaN~Al.Ga.N is found to be most suitable one for reali作者: 暗指 時(shí)間: 2025-3-24 09:28
Applications of Si~3C-SiC Heterostructures in High-Frequency Electronics up to the Terahertz Spectrahertz (THz) frequency spectrum are described in this chapter. Current mechanism of Si~3C-SiC heterojunctions has been discussed concisely. Applications of this heterostructure in different areas of electronics and optoelectronics like microelectromechanical systems (MEMS), energy conversion, photod作者: BILK 時(shí)間: 2025-3-24 10:52
Novel InAs/Si Heterojunction Dual-Gate Triple Metal P-i-N Tunneling Graphene Nanoribbon Field Effechene nanoribbon field effect transistor (DG-TM-TGNFET) has been reported in this chapter. The novel heterojunction-based TFET structure with ultra-thin graphene nanoribbon placed over silicon channel has produced better digital and analog/RF performance, by means of which the proposed device can be 作者: Optic-Disk 時(shí)間: 2025-3-24 17:37 作者: 供過于求 時(shí)間: 2025-3-24 21:10 作者: LURE 時(shí)間: 2025-3-24 23:26
https://doi.org/10.1007/978-3-662-07506-7of prospective applications of THz signals as well as some state-of-the-art electronic and photonic devices have also been included in this chapter. A chapter-wise overview of the entire book has been incorporated at the end of this introductory chapter.作者: Adrenal-Glands 時(shí)間: 2025-3-25 05:39
https://doi.org/10.1007/978-981-19-2711-9e intraband transition from ground to first excited state. Peak values of absorption cross section are noted which reflects active area for optical transitions has dimensions in sub-micron range. Structural parameters are varied to compute the possible variation of that cross section, taking into ac作者: agnostic 時(shí)間: 2025-3-25 11:13
Theo van de Klundert,Fieke van der Lecqmand for wireless systems in terms of data rate, it is necessary to look for new technology to support this need. Nowadays, The interest of Terahertz (THz) technology is growing increasingly. Indeed, THz technology indeed has the potential to provide ultra-fast data rate of Terabit-per-second (Tbps)作者: 極端的正確性 時(shí)間: 2025-3-25 13:13 作者: 會(huì)犯錯(cuò)誤 時(shí)間: 2025-3-25 18:59 作者: 刺穿 時(shí)間: 2025-3-25 22:15 作者: isotope 時(shí)間: 2025-3-26 01:27
Power in Pre-Agricultural Societies,ct matter of this chapter. The operating speed of the proposed gate is 1?Tb/s. QDSOA is a versatile gain medium and has advantages in terms of gain recovery, patterning effect, amplified spontaneous emission (ASE) noise, etc. The XOR gate is simulated using MATLAB and analyzed by calculating Extinct作者: FUSE 時(shí)間: 2025-3-26 05:29 作者: Hyperplasia 時(shí)間: 2025-3-26 10:18 作者: pus840 時(shí)間: 2025-3-26 13:18
Holistic Health for Well-Being,ue. The basic parameters of the device have been outlined by shifting the channel length, keeping gate oxide thickness constant to achieve high ON to OFF current ratio (./.) and low subthreshold swing (SS). The surface potential, device electric field and ON state or drain current are obtained from 作者: Detonate 時(shí)間: 2025-3-26 17:49
At the Sharp End of Medical Carehe transit time (IMPATT) sources for the generation of terahertz (THz) waves have been briefly described. The noise outputs of the sources at different electromagnetic spectrum have been discussed. The details of deferent device structures, potential materials, popular simulation techniques, etc. ar作者: lipids 時(shí)間: 2025-3-26 21:14
Psychobiological Aspects of Life Stress,l single-drift (SD) IMPATT sources. This model is suitable for both sub-terahertz frequency and terahertz (THz) frequency of operation of the device. The details of the model are presented in this chapter; however, the simulation results are omitted from here due to the limitations in availability o作者: configuration 時(shí)間: 2025-3-27 02:13 作者: incarcerate 時(shí)間: 2025-3-27 06:57 作者: 個(gè)阿姨勾引你 時(shí)間: 2025-3-27 13:02
Coping with COVID-19: The WeChat WayTHz) power. Avalanche transit time (ATT) sources based on GaAs~Al.Ga.As, Si~3C-SiC and GaN~Al.Ga.N heterojunctions are simulated, and their performances are compared at a wide range of frequency spectrum. Out of those potential heterostructures, GaN~Al.Ga.N is found to be most suitable one for reali作者: alcohol-abuse 時(shí)間: 2025-3-27 13:40
https://doi.org/10.1007/978-94-009-4243-1ahertz (THz) frequency spectrum are described in this chapter. Current mechanism of Si~3C-SiC heterojunctions has been discussed concisely. Applications of this heterostructure in different areas of electronics and optoelectronics like microelectromechanical systems (MEMS), energy conversion, photod作者: Insufficient 時(shí)間: 2025-3-27 21:18
Coping with Caveats in Coalition Warfarehene nanoribbon field effect transistor (DG-TM-TGNFET) has been reported in this chapter. The novel heterojunction-based TFET structure with ultra-thin graphene nanoribbon placed over silicon channel has produced better digital and analog/RF performance, by means of which the proposed device can be 作者: 安撫 時(shí)間: 2025-3-28 00:49 作者: 統(tǒng)治人類 時(shí)間: 2025-3-28 05:31 作者: Fissure 時(shí)間: 2025-3-28 10:04
978-981-16-4949-3The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapor作者: 退出可食用 時(shí)間: 2025-3-28 13:37 作者: CLOUT 時(shí)間: 2025-3-28 16:40
Aritra Acharyya,Arindam Biswas,Palash DasProvides a special focus on the generation, detection, and processing techniques of terahertz signals.Covers detailed discussions of state-of-the-art THz signal and image processing techniques.Serves 作者: 親密 時(shí)間: 2025-3-28 20:41
https://doi.org/10.1007/978-3-662-07506-7of prospective applications of THz signals as well as some state-of-the-art electronic and photonic devices have also been included in this chapter. A chapter-wise overview of the entire book has been incorporated at the end of this introductory chapter.作者: Tinea-Capitis 時(shí)間: 2025-3-28 23:56 作者: seruting 時(shí)間: 2025-3-29 05:10 作者: Landlocked 時(shí)間: 2025-3-29 11:13 作者: slipped-disk 時(shí)間: 2025-3-29 12:13 作者: glans-penis 時(shí)間: 2025-3-29 18:13 作者: 饒舌的人 時(shí)間: 2025-3-29 20:38
Cutting-Edge Technologies for Terahertz Wave Generation: A Brief History from the Inception Till thhe transit time (IMPATT) sources for the generation of terahertz (THz) waves have been briefly described. The noise outputs of the sources at different electromagnetic spectrum have been discussed. The details of deferent device structures, potential materials, popular simulation techniques, etc. are also appended in this chapter.作者: 放大 時(shí)間: 2025-3-30 03:47
An Approximate Model for Analyzing Four-Terminal Lateral Single-Drift IMPATT-Based THz Radiators,l single-drift (SD) IMPATT sources. This model is suitable for both sub-terahertz frequency and terahertz (THz) frequency of operation of the device. The details of the model are presented in this chapter; however, the simulation results are omitted from here due to the limitations in availability of space.作者: FRONT 時(shí)間: 2025-3-30 05:42 作者: compose 時(shí)間: 2025-3-30 09:00 作者: Conflagration 時(shí)間: 2025-3-30 16:26
https://doi.org/10.1007/978-981-16-4947-9THz Materials; THz Sources; THz Detectors; THz Signal Processing; THz Image Processing; THz Antennas; Nano作者: Increment 時(shí)間: 2025-3-30 18:33 作者: 正面 時(shí)間: 2025-3-31 00:43 作者: Ejaculate 時(shí)間: 2025-3-31 03:09
Thomas Ellwart,Torsten Biemann,Oliver Rackf the theory of antennas as well that the general characteristics of the antenna systems realized with a certain number of radiators. We will analyze antenna’s systems by studying their characteristics. Steps for designing an antenna will be given. All this information may guide the user in choosing作者: 蒼白 時(shí)間: 2025-3-31 06:45
Climaphobia & Vacuum-Packed Citiesent with radio carrier frequencies less than 100?GHz are useful for 5G IoT use cases as formulated by 3GPP in release 15/16. Category 2 with radio carrier at 140?GHz in Sub-Terahertz band will be useful for 6G-IoT use cases. This chapter will focus on discussion for category 2 of system development 作者: clarify 時(shí)間: 2025-3-31 13:02 作者: white-matter 時(shí)間: 2025-3-31 15:09 作者: tooth-decay 時(shí)間: 2025-3-31 18:11
Channel Characterization and CE-OFDM Modulation for Terahertz System,ms of the Bit Error Rate (BER). Thus, In order to develop the THz system and effectively exploit the advantages of this technology, it is essential to know the properties of the radio channel in THz Band than to implement the THz channel in the transmission chain based on CE-OFDM. To do that, an acc作者: TAG 時(shí)間: 2025-4-1 01:17 作者: 不發(fā)音 時(shí)間: 2025-4-1 02:02 作者: 膝蓋 時(shí)間: 2025-4-1 08:53 作者: BACLE 時(shí)間: 2025-4-1 14:13 作者: 流逝 時(shí)間: 2025-4-1 16:43 作者: 的事物 時(shí)間: 2025-4-1 21:05 作者: 迎合 時(shí)間: 2025-4-2 01:50
Coordination Models: A Guided Tour-based optical switch for the designing of the encryption and decryption circuit. The main advantage of this is that it performs the operation in terahertz range also same circuit use as encryption and decryption operations.作者: Texture 時(shí)間: 2025-4-2 03:40
Power in Pre-Agricultural Societies,ion ratio (ER), Contrast ratio (CR), and quality factor (Q). The bit error rate (BER) is also calculated to show proper operation of the logic for optical communication applications. The XOR gate is characterized by pseudo eye diagram also. Relative eye opening of more than 90% is calculated shows clear transmission of the bits.
