標題: Titlebook: Gate Dielectrics and MOS ULSIs; Principles, Technolo Takashi Hori Book 1997 Springer-Verlag Berlin Heidelberg 1997 LSI.MIS.MOS.dielectrics. [打印本頁] 作者: implicate 時間: 2025-3-21 17:58
書目名稱Gate Dielectrics and MOS ULSIs影響因子(影響力)
書目名稱Gate Dielectrics and MOS ULSIs影響因子(影響力)學科排名
書目名稱Gate Dielectrics and MOS ULSIs網(wǎng)絡公開度
書目名稱Gate Dielectrics and MOS ULSIs網(wǎng)絡公開度學科排名
書目名稱Gate Dielectrics and MOS ULSIs被引頻次
書目名稱Gate Dielectrics and MOS ULSIs被引頻次學科排名
書目名稱Gate Dielectrics and MOS ULSIs年度引用
書目名稱Gate Dielectrics and MOS ULSIs年度引用學科排名
書目名稱Gate Dielectrics and MOS ULSIs讀者反饋
書目名稱Gate Dielectrics and MOS ULSIs讀者反饋學科排名
作者: 我還要背著他 時間: 2025-3-21 22:59 作者: circumvent 時間: 2025-3-22 00:49 作者: 濃縮 時間: 2025-3-22 06:17
MOS Fielid-Effect Transistor,In this chapter, we shall present the MOSFET theory and issues that relate to scaling and integration.作者: negotiable 時間: 2025-3-22 12:47 作者: 搏斗 時間: 2025-3-22 12:55 作者: 搏斗 時間: 2025-3-22 21:08
https://doi.org/10.1007/978-3-322-92285-4n (.: ≥ 107 transistors on a chip) circuits such as microprocessors and semiconductor memories. As the name implies, the MIS transistor consists of a semiconductor substrate and a top gate electrode, between which an insulating .. of thickness d is formed (Fig. 1.1). Source and drain junctions are f作者: abolish 時間: 2025-3-22 21:42
https://doi.org/10.1007/978-3-531-92693-3IS transistor (Fig. 1.1), the MIS capacitor has only two terminals, and is the simplest and most useful device in the study of semiconductor surfaces and gate dielectrics [2.1-3]. In this chapter, we shall consider MIS theory and its applications. In most cases, a p-type semiconductor will be taken 作者: 巨碩 時間: 2025-3-23 01:22 作者: 橫條 時間: 2025-3-23 09:11
Takashi HoriThe reader will obtain updated information for not only deep-submicron ULSIs having nanometer-range ultrathin gate- dielectrics but also nitrided oxides from this first book presenting them in detail 作者: 花束 時間: 2025-3-23 12:26 作者: Overthrow 時間: 2025-3-23 16:23 作者: 散布 時間: 2025-3-23 19:00 作者: aggressor 時間: 2025-3-24 01:30
0172-5734 rided oxides from this first book presenting them in detail .Gate Dielectrics and MOS ULSIs .provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior qu作者: 騙子 時間: 2025-3-24 03:43 作者: 合乎習俗 時間: 2025-3-24 10:22 作者: auxiliary 時間: 2025-3-24 13:00
Thermally Nitrided Oxides: ,,4+ 16 Mbit samples to mass production. Some of them, especially in Japan, rushed to replace thermal gate-SiO{2in}, with nitrided oxides [5.1]. This may mean the first event since the birth of MOS devices [5.2] in 1960, from the standpoint that MIS products actually use a silicon-dielectric interface other than the conventional Si-SiO. interface.作者: 壕溝 時間: 2025-3-24 16:13
Book 1997e dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g.,作者: FLAG 時間: 2025-3-24 20:18
MIS Structure,and gate dielectrics [2.1-3]. In this chapter, we shall consider MIS theory and its applications. In most cases, a p-type semiconductor will be taken as an example, since it is employed in n-channel MOSFETs.作者: Osteoporosis 時間: 2025-3-25 02:53 作者: 鐵砧 時間: 2025-3-25 04:57 作者: 委派 時間: 2025-3-25 09:26
0172-5734 ether with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.978-3-642-60856-8Series ISSN 0172-5734 作者: BUCK 時間: 2025-3-25 15:14
Introduction,r ULSls. Unfortunately, semiconductors such as GaAs other than silicon cannot realize acceptable MISFETs due to the lack of a stable semiconductor-insulator interface in spite of innumerable attempts, the difficulty of which, in fact, was also encountered in the early development of the silicon semi作者: 名義上 時間: 2025-3-25 16:58
Introduction,n (.: ≥ 107 transistors on a chip) circuits such as microprocessors and semiconductor memories. As the name implies, the MIS transistor consists of a semiconductor substrate and a top gate electrode, between which an insulating .. of thickness d is formed (Fig. 1.1). Source and drain junctions are f作者: 強制令 時間: 2025-3-25 23:06
MIS Structure,IS transistor (Fig. 1.1), the MIS capacitor has only two terminals, and is the simplest and most useful device in the study of semiconductor surfaces and gate dielectrics [2.1-3]. In this chapter, we shall consider MIS theory and its applications. In most cases, a p-type semiconductor will be taken 作者: Ingrained 時間: 2025-3-26 03:15
Thermally Nitrided Oxides: ,,irements on the quality, especially the reliability, become more and more severe. Most of all, flash memories demand a dielectric more reliable than the conventional Si02 with its poor interface stability. This is because dielectric reliability issues are vital for them, as described in Chap. 1 and 作者: febrile 時間: 2025-3-26 05:08 作者: Firefly 時間: 2025-3-26 11:05 作者: nugatory 時間: 2025-3-26 16:40 作者: ordain 時間: 2025-3-26 18:03 作者: landmark 時間: 2025-3-26 21:45 作者: 服從 時間: 2025-3-27 03:25 作者: CRACK 時間: 2025-3-27 06:06 作者: fluoroscopy 時間: 2025-3-27 09:58 作者: 包裹 時間: 2025-3-27 14:13
Age, Work and Social Security: The Policy Contexts central to current concerns was only just beginning and was on a very modest scale. Effective means of birth control, other than illegal abortion and infanticide, were unknown and the subject was certainly unmentionable.作者: Chemotherapy 時間: 2025-3-27 20:40
Christian H?rtwig,Ernst-H. Hofftudents and provides a pedagogical introduction to the exciting topic of field space covariance and the complete geometrization of quantum field theory..978-3-030-85271-9978-3-030-85269-6Series ISSN 2190-5053 Series E-ISSN 2190-5061 作者: rectocele 時間: 2025-3-28 00:28
Important Non-Ideal MHD Processesvery few post-release adjustments and saved time and financial resources. Patient safety is improved due to this rap back process because unfit workers are immediately identified and removed from long-term care facilities.作者: 使乳化 時間: 2025-3-28 04:53 作者: 嚴峻考驗 時間: 2025-3-28 09:17
Walter Blauth,Frank R. Schneider-Sickertgovernment expressed any special concern for the education of its girls. Except for providing ten grants to prepare girls for teaching by attending an excellent secondary girls’ boarding school; however, nothing actually changed.
