作者: 催眠藥 時(shí)間: 2025-3-22 00:19
https://doi.org/10.1007/978-3-662-40377-8 type. While at high temperatures thermionic emission over barriers and phonon assisted tunneling may be dominant, at low temperatures carriers must tunnel through the barriers. The tunneling transport rates vary greatly with the carrier effective mass and thus very different mobilities are observed作者: Peak-Bone-Mass 時(shí)間: 2025-3-22 02:43 作者: milligram 時(shí)間: 2025-3-22 04:44
,Thoraxuntersuchung in Rückenlage (E/III),for lateral dimensions of less than 0.1 μm. This is still about a factor of four larger than the dimension needed to reach the regime of two-dimensional quantization. An added consideration is the condition of the surface, which has a large effect on the electrical and optical properties of small st作者: SCORE 時(shí)間: 2025-3-22 09:12 作者: BACLE 時(shí)間: 2025-3-22 16:53 作者: BACLE 時(shí)間: 2025-3-22 19:54
Optoelectronic Devices,today: zero dispersion at λ = 1.3 μm and minimum loss at λ = 1.55 μm [10.4,5]. Finally, even the very early lasers fabricated from GaInAs/InP turned out to be very reliable [10.6–8]. By 1979 their reliability matched that of the much older and then more established GaAs/AlGaAs lasers [10.9]. Today, 作者: 濃縮 時(shí)間: 2025-3-22 22:40 作者: CHOKE 時(shí)間: 2025-3-23 04:59 作者: alabaster 時(shí)間: 2025-3-23 07:24
Optical Properties of Quantum Wells,e discussion of the optical properties of Ga.In.As.P. quantum wells we shall rely primarily on the results obtained on the structures grown by HSMBE with which we are most familiar. However, notable examples of the work carried out on structures grown by MOMBE and MOCVD [7.2–4] will also be discussed.作者: 占卜者 時(shí)間: 2025-3-23 10:02 作者: beta-cells 時(shí)間: 2025-3-23 16:19 作者: Interferons 時(shí)間: 2025-3-23 21:48 作者: coltish 時(shí)間: 2025-3-23 23:18 作者: flex336 時(shí)間: 2025-3-24 04:55 作者: Concerto 時(shí)間: 2025-3-24 07:03
Peter Br?dner,Erich Latniak,Walter Weiβe base-collector junction is reverse biased, and collects the carriers injected from the emitter. The transistor operates through the transport of minority carriers, but both electrons and holes contribute to the current.作者: 極力證明 時(shí)間: 2025-3-24 11:45
Chemistry,we will present various thermodynamic relationships as needed without derivation. Excellent discussions of the fundamentals of chemical thermodynamics are available in texts by . et al. [2.1], . [2.2], and . and . [2.3], among others.作者: 妨礙 時(shí)間: 2025-3-24 18:16
Bipolar Transistors,e base-collector junction is reverse biased, and collects the carriers injected from the emitter. The transistor operates through the transport of minority carriers, but both electrons and holes contribute to the current.作者: habile 時(shí)間: 2025-3-24 22:51 作者: hysterectomy 時(shí)間: 2025-3-24 23:55
Chemistry, by the thermodynamic driving force for the processes to occur, and the kinetic relationships that define the rates at which they occur. These forces and relationships are not known in detail for the various molecular beam epitaxy methods, but sufficient information is available to provide considera作者: BANAL 時(shí)間: 2025-3-25 06:51 作者: 接觸 時(shí)間: 2025-3-25 07:36
Molecular Beam Epitaxy Systems and Procedures,n which epitaxial layers are grown under high vacuum conditions by causing a thermal flux of atoms or molecules, that constitute the elemental components of the epitaxial layer, to impinge and react upon the heated surface of a single crystal substrate. The substrate surface is the template for epit作者: FLIRT 時(shí)間: 2025-3-25 13:51 作者: sultry 時(shí)間: 2025-3-25 18:51 作者: 脫水 時(shí)間: 2025-3-25 23:10 作者: 喚醒 時(shí)間: 2025-3-26 00:40 作者: 柏樹(shù) 時(shí)間: 2025-3-26 06:53 作者: 羞辱 時(shí)間: 2025-3-26 10:58
Optoelectronic Devices,with surprisingly low threshold current density were prepared by Liquid-Phase Epitaxy (LPE) by . and coworkers in 1975 [10.1], and by . in 1976 [10.2]. These first lasers operated at room temperature with the wavelengths of 1.02 and 1.1 μm. Lasers operating in the entire lattice matched range of qua作者: JUST 時(shí)間: 2025-3-26 13:19
In-Situ Processing and Selective Area Epitaxy,ness, composition and interface abruptness can be controlled very precisely. These parameters can be readily adjusted in the growth direction on a scale considerably finer than 0.01 μm. It is thus relatively easy to reach the size for which quantum mechanical phenomena resulting from one-dimensional作者: 聯(lián)想 時(shí)間: 2025-3-26 19:33 作者: Myocarditis 時(shí)間: 2025-3-27 00:13 作者: 殘暴 時(shí)間: 2025-3-27 03:57 作者: 魅力 時(shí)間: 2025-3-27 08:02
https://doi.org/10.1007/978-3-642-81508-9n which epitaxial layers are grown under high vacuum conditions by causing a thermal flux of atoms or molecules, that constitute the elemental components of the epitaxial layer, to impinge and react upon the heated surface of a single crystal substrate. The substrate surface is the template for epit作者: Nomadic 時(shí)間: 2025-3-27 10:02
Triebfedern menschlicher Leistung,As because it is a significant background impurity under some conditions of MOMBE. In addition, although the emphasis of this monograph is on InP and GnInAs(P), the interesting and important case of heavy p-type doping of GaAs and AlGaAs with carbon during MOMBE is also discussed. Aside from carbon,作者: clarify 時(shí)間: 2025-3-27 15:14
https://doi.org/10.1007/978-3-322-98759-4ctive, probes large areas of the sample to a depth on the order of 10 μm, yet at the same time provides information on atomic scale. Its applications to the GaInAsP/InP material system range from the determination of the lattice constant of single epitaxial layers, important in this system which is 作者: 放牧 時(shí)間: 2025-3-27 21:18
https://doi.org/10.1007/978-3-662-29361-4itaxial methods ranging from ESMBE [7.1], through several GSMBE methods, to low and atmospheric pressure MOCVD. The GSMBE and MOCVD methods have achieved the reproducibility and precision of multilayer epitaxy of GaInAs(P), which have been previously reserved only for the GaAs/Al.Ga.As system. In th作者: calorie 時(shí)間: 2025-3-28 00:07
https://doi.org/10.1007/978-3-662-40377-8 large variety of such structures makes possible the detailed study of this alteration. In structures with quantum wells the anisotropic three-dimensional carrier motion breaks down into two distinct components. The most dramatic and well-studied effect arising in the plane of the quantum well is th作者: LURE 時(shí)間: 2025-3-28 02:50
Peter Br?dner,Erich Latniak,Walter Weiβkinds, bipolar and field-effect transistors, the bipolar has advantages for many applications requiring a high current capability and a high speed. The bipolar transistor [9.1—6] consists of two back-to-back p-n junctions, so that the semiconductor structure can have either n-p-n or p-n-p regions th作者: SPURN 時(shí)間: 2025-3-28 07:20
https://doi.org/10.1007/978-3-642-93462-9with surprisingly low threshold current density were prepared by Liquid-Phase Epitaxy (LPE) by . and coworkers in 1975 [10.1], and by . in 1976 [10.2]. These first lasers operated at room temperature with the wavelengths of 1.02 and 1.1 μm. Lasers operating in the entire lattice matched range of qua作者: 協(xié)議 時(shí)間: 2025-3-28 11:29 作者: 四海為家的人 時(shí)間: 2025-3-28 16:18 作者: Free-Radical 時(shí)間: 2025-3-28 20:01 作者: Grandstand 時(shí)間: 2025-3-29 01:40
https://doi.org/10.1007/978-3-322-88570-8 there are a variety of these sources that may occupy interchangeable positions in an MBE growth chamber, and since they may be considered to be the most critical and characteristic part of the MBE system, we have chosen to devote a separate chapter to a description of their properties.作者: meritorious 時(shí)間: 2025-3-29 03:30
Introduction,terials. This parallel development has resulted from the fact that precision epitaxial growth methods have provided new degrees of freedom for the basic researcher and the semiconductor device developer who, in return, have provided the motivation for support of the development of more sophisticated epitaxy methods.作者: 浮雕 時(shí)間: 2025-3-29 07:56
The Generation of Atomic and Molecular Beams for Elemental and Gas Source Molecular Beam Epitaxy, there are a variety of these sources that may occupy interchangeable positions in an MBE growth chamber, and since they may be considered to be the most critical and characteristic part of the MBE system, we have chosen to devote a separate chapter to a description of their properties.作者: 輕率看法 時(shí)間: 2025-3-29 15:03
