標題: Titlebook: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion; Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanon Book 2018 [打印本頁] 作者: Affordable 時間: 2025-3-21 19:21
書目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion影響因子(影響力)
書目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion影響因子(影響力)學(xué)科排名
書目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion網(wǎng)絡(luò)公開度
書目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion被引頻次
書目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion被引頻次學(xué)科排名
書目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion年度引用
書目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion年度引用學(xué)科排名
書目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion讀者反饋
書目名稱Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion讀者反饋學(xué)科排名
作者: CRP743 時間: 2025-3-21 21:41
Vertical GaN Transistors for Power Electronics, technology, detailing out the three-terminal devices developed over the last decade. Power converters rely on solid state devices featuring diodes and transistors as their basic building blocks. GaN technology is an ever-expanding topic for R&D, proving its potential to solve several challenges in 作者: Neonatal 時間: 2025-3-22 02:13 作者: SOB 時間: 2025-3-22 07:21 作者: 聯(lián)想 時間: 2025-3-22 10:21
Impact of Parasitics on GaN-Based Power Conversion,cs whenever they were found to be limiting the system operation or performance in some manner. The current approach has always been to mitigate the effects of these unwanted parasitics through design improvements, be it on a device, package, or system level. As these parasitics are, for the most par作者: synchronous 時間: 2025-3-22 13:13 作者: synchronous 時間: 2025-3-22 18:57
GaN in Switched-Mode Power Amplifiers, power converters, and wireless power transfer (WPT) among myriad other applications. Advances in power semiconductor devices, magnetics, and circuit design are opening the door to much more efficient generation and delivery of power at radio frequencies. This chapter presents an overview of switche作者: unstable-angina 時間: 2025-3-22 23:43 作者: 音樂等 時間: 2025-3-23 03:10
Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics,One of the major factors in determining the quality of GaN technology is the epitaxial step. This chapter reviews two different approaches: the use of bulk GaN substrates and GaN-on-Si epitaxy.作者: 洞穴 時間: 2025-3-23 08:21 作者: Muffle 時間: 2025-3-23 11:38
Considerations on Planning and Architecture,G in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally off operation are presented.作者: 移動 時間: 2025-3-23 14:19 作者: Indict 時間: 2025-3-23 20:42
https://doi.org/10.1007/978-3-319-77994-2Gallium Nitride; GaN device physics; GaN for Power Conversion; GaN transistors; GaN Reliability作者: Cabinet 時間: 2025-3-23 22:42 作者: Collected 時間: 2025-3-24 03:02 作者: Evacuate 時間: 2025-3-24 10:08 作者: 煤渣 時間: 2025-3-24 11:40
https://doi.org/10.1007/978-3-031-05469-3able to guarantee their reliability. In this chapter, we discuss how to evaluate the robustness of GaN power transistors. In the switching of GaN power transistors, they can be subject to the so-called current collapse that is a specific phenomenon for GaN in which the ON state resistance is increas作者: 起皺紋 時間: 2025-3-24 17:41 作者: 施魔法 時間: 2025-3-24 19:30 作者: Critical 時間: 2025-3-25 03:13
https://doi.org/10.1007/978-1-4842-2102-0 power converters, and wireless power transfer (WPT) among myriad other applications. Advances in power semiconductor devices, magnetics, and circuit design are opening the door to much more efficient generation and delivery of power at radio frequencies. This chapter presents an overview of switche作者: landmark 時間: 2025-3-25 04:45 作者: 開始從未 時間: 2025-3-25 10:42
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion978-3-319-77994-2Series ISSN 1558-9412 Series E-ISSN 1558-9420 作者: malapropism 時間: 2025-3-25 14:50 作者: 小步舞 時間: 2025-3-25 16:42
Book 2018level, both for power conversions architectures and switched mode power amplifiers;.Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;.Enables design of smaller, cheaper and more efficient power supplies..作者: 手術(shù)刀 時間: 2025-3-25 20:34
Torgeir Dings?yr,Tore Dyb?,Nils Brede Moegher) from a single chip for a rated voltage (1KV and higher) is a standard requirement. Particularly when the market is favorable toward electrification of cars and other means of transportations, GaN must expand its scope to provide high power solutions with higher power density compared to Si and作者: Missile 時間: 2025-3-26 01:12
https://doi.org/10.1007/978-3-031-05469-3is crucially dependent on the drain current – voltage locus curve during the switching event, the switching reliability of GaN transistor depends on the switching locus. Accordingly a concept of Switching Safe Operating Area (SSOA) is proposed to define the switching conditions wherein the device ca作者: 軍械庫 時間: 2025-3-26 08:11
https://doi.org/10.1007/978-1-4842-2102-0t construction, including the design and application of passive components at radio frequencies. Magnetics for power applications at HF and VHF pose a special challenge when compactness and high efficiency are desired. We explore the design of air-core and magnetic-core magnetics for this frequency 作者: 改良 時間: 2025-3-26 09:16 作者: ethereal 時間: 2025-3-26 14:00
Validating GaN Robustness,is crucially dependent on the drain current – voltage locus curve during the switching event, the switching reliability of GaN transistor depends on the switching locus. Accordingly a concept of Switching Safe Operating Area (SSOA) is proposed to define the switching conditions wherein the device ca作者: 新鮮 時間: 2025-3-26 17:57
GaN in Switched-Mode Power Amplifiers,t construction, including the design and application of passive components at radio frequencies. Magnetics for power applications at HF and VHF pose a special challenge when compactness and high efficiency are desired. We explore the design of air-core and magnetic-core magnetics for this frequency 作者: 雜役 時間: 2025-3-26 21:03 作者: 舔食 時間: 2025-3-27 05:08 作者: Reservation 時間: 2025-3-27 09:17 作者: 口音在加重 時間: 2025-3-27 13:28 作者: IOTA 時間: 2025-3-27 15:32
Reliability of GaN-Based Power Devices, serious issue that must be taken into consideration. The first part of the chapter deals with the above mentioned aspects and mainly focuses on the permanent degradation induced in GaN-based devices by off-state time-dependent mechanisms.作者: 真實的人 時間: 2025-3-27 20:46 作者: Cosmopolitan 時間: 2025-3-27 23:12 作者: 作嘔 時間: 2025-3-28 03:12 作者: menopause 時間: 2025-3-28 06:34
Impact of Parasitics on GaN-Based Power Conversion,hese parasitics, as GaN technology continues to improve over the coming years, including some thoughts on relevant areas of research for future system improvements..To start, the relevant GaN power conversion parasitics can, roughly, be broken up into three distinct categories, namely:作者: 話 時間: 2025-3-28 11:18
Hans-Werner Gassnertabase applications thattrusted recovery should be done on-the-fly without blocking theexecution of new user transactions. ..Trusted Recovery And Defensive Info978-1-4419-4926-4978-1-4757-6880-0Series ISSN 1568-2633 Series E-ISSN 2512-2193 作者: Obedient 時間: 2025-3-28 15:49 作者: 禁止,切斷 時間: 2025-3-28 20:07 作者: 起皺紋 時間: 2025-3-29 02:18
