標題: Titlebook: Gallium Nitride Processing for Electronics, Sensors and Spintronics; Stephen J. Pearton,Cammy R. Abernathy,Fan Ren Book 2006 Springer-Verl [打印本頁] 作者: papyrus 時間: 2025-3-21 19:14
書目名稱Gallium Nitride Processing for Electronics, Sensors and Spintronics影響因子(影響力)
書目名稱Gallium Nitride Processing for Electronics, Sensors and Spintronics影響因子(影響力)學科排名
書目名稱Gallium Nitride Processing for Electronics, Sensors and Spintronics網(wǎng)絡公開度
書目名稱Gallium Nitride Processing for Electronics, Sensors and Spintronics網(wǎng)絡公開度學科排名
書目名稱Gallium Nitride Processing for Electronics, Sensors and Spintronics被引頻次
書目名稱Gallium Nitride Processing for Electronics, Sensors and Spintronics被引頻次學科排名
書目名稱Gallium Nitride Processing for Electronics, Sensors and Spintronics年度引用
書目名稱Gallium Nitride Processing for Electronics, Sensors and Spintronics年度引用學科排名
書目名稱Gallium Nitride Processing for Electronics, Sensors and Spintronics讀者反饋
書目名稱Gallium Nitride Processing for Electronics, Sensors and Spintronics讀者反饋學科排名
作者: 伸展 時間: 2025-3-21 22:03 作者: BLUSH 時間: 2025-3-22 00:57 作者: 向外 時間: 2025-3-22 05:25 作者: NIB 時間: 2025-3-22 11:44 作者: 終點 時間: 2025-3-22 15:26
Advanced Processing of Gallium Nitride for Electronic Devices,e high resistivity GaN. Damage-related isolation with sheet resistances of 10. Ω/□ in n-GaN and 10. Ω/□ in p-GaN have been achieved by implanting O and transition metal elements. Effects of surface cleanliness on characteristics of GaN Schottky contacts have been investigated, and the reduction in b作者: 終點 時間: 2025-3-22 19:30
Chemical, Gas, Biological, and Pressure Sensing,lock co-polymer solutions. Pt-gated GaN Schottky diodes and Sc.O.-AlGaN-GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H.-containing ambients. Of particular interest are methods for detecting ethylene (C.H.), which offers problems because of its stro作者: Misnomer 時間: 2025-3-22 23:00
Novel Insulators for Gallium Nitride Metal-Oxide Semiconductor Field Effect Transistors and AlGaN-Grrent collapse in GaN-AlGaN HEMTs. Clear evidence of inversion has been demonstrated in gatecontrolled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high-temperature implant activation anneal show a total surface state density of ～3 × 10. cm.. On HEMT作者: 幼兒 時間: 2025-3-23 02:55
1619-0181 ing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors..978-1-84996-965-9978-1-84628-359-8Series ISSN 1619-0181 Series E-ISSN 2365-0761 作者: 啜泣 時間: 2025-3-23 06:10
https://doi.org/10.1007/1-84628-359-0GaN; Gallium nitride; Materials Processing; Sensors; electronics; power electronics; spintronics作者: 貨物 時間: 2025-3-23 11:52
Stephen J. Pearton,Cammy R. Abernathy,Fan RenOnly book to cover current research into IV-nitrides, their processing and use in novel applications in sensors and spintronics.Includes supplementary material: 作者: 古代 時間: 2025-3-23 17:57
978-1-84996-965-9Springer-Verlag London 2006作者: travail 時間: 2025-3-23 19:19
Gallium Nitride Processing for Electronics, Sensors and Spintronics978-1-84628-359-8Series ISSN 1619-0181 Series E-ISSN 2365-0761 作者: Fantasy 時間: 2025-3-23 23:59
The Basics of Human Performance Improvement, it is necessary to preserve the surface during the required high temperature anneal. A novel rapid thermal processing up to 1500°C, in conjunction with AlN encapsulation, is capable of activating high dose implants, although for most applications an anneal temperature of 1100–1150°C is sufficient t作者: Adrenaline 時間: 2025-3-24 02:30 作者: PAC 時間: 2025-3-24 07:06 作者: Affiliation 時間: 2025-3-24 11:34
Validating the Product Hypothesissensors. There is strong potential for new classes of ultra-low power, high-speed memory, logic and photonic devices based on spintronics. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures, and most theories predict that the Curie temp作者: DEI 時間: 2025-3-24 16:12
Introduction to Scrum and Agile Concepts,Further, circuit design can be simplified, since enhancement-mode MOSFETs can be used to form single supply voltage control circuits for power transistors. The use of MOSFETs also allows the use of complementary devices, thus producing less power consumption and simpler circuit design. A critical ne作者: 衣服 時間: 2025-3-24 19:35
Introduction to Agile Procurement Processes,In this chapter, the characteristics of dry etching of the AlGaInN materials system in different reactor types and plasma chemistries are reviewed, along with the depth and thermal stability of etch-induced damage. The application to device processing for both electronics and photonics is also discussed.作者: 巧辦法 時間: 2025-3-24 23:12
Dry Etching of Gallium Nitride and Related Materials,In this chapter, the characteristics of dry etching of the AlGaInN materials system in different reactor types and plasma chemistries are reviewed, along with the depth and thermal stability of etch-induced damage. The application to device processing for both electronics and photonics is also discussed.作者: 向外 時間: 2025-3-25 07:17 作者: 責怪 時間: 2025-3-25 07:40 作者: palpitate 時間: 2025-3-25 12:31 作者: 護航艦 時間: 2025-3-25 19:16
Design and Fabrication of Gallium High-Power Rectifiers,itching speed, which is important for improving the efficiency of inductive motor controllers and power supplies. Both GaN and SiC power Schottky diodes have demonstrated shorter turn-on delays than comparable Si devices. In this chapter we review the design and fabrication of GaN power rectifiers.作者: 革新 時間: 2025-3-25 21:43
Nitride-Based Spintronics,erature will be a strong function of bandgap. In this chapter we review the current state of the art in producing room-temperature ferromagnetism in GaN-based materials, the origins of the magnetism and its potential applications.作者: Console 時間: 2025-3-26 03:42
1619-0181 plementary material: .Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with?practical magne作者: 藕床生厭倦 時間: 2025-3-26 05:09 作者: Malleable 時間: 2025-3-26 09:29
Design and Fabrication of Gallium High-Power Rectifiers, times larger and on-state resistance R. approximately 400 times lower at a given voltage. These characteristics have made GaN devices attractive for hybrid electric vehicles and power conditioning in large industrial motors. In particular, Schottky rectifiers are attractive because of their fast sw作者: Tracheotomy 時間: 2025-3-26 15:49 作者: 漂泊 時間: 2025-3-26 18:35 作者: 審問,審訊 時間: 2025-3-26 22:16 作者: 綠州 時間: 2025-3-27 02:32 作者: 厭食癥 時間: 2025-3-27 05:32 作者: Middle-Ear 時間: 2025-3-27 09:54
Uwe Seebachern arterial reconstruction is undertaken. Technical considerations related to portal venous and hepatic arterial resection and reconstruction are reviewed in this chapter, as well as current controversies related to surgery for hilar cholangiocarcinoma.作者: 缺乏 時間: 2025-3-27 15:55
Experimental Investigations into Erosion of Zinc-Coated Brass Wire Electrode During WEDM of Ti-6Al-4in Field Emission Scanning Electron Microscope (FESEM) and Energy-Dispersive X-ray (EDX) spectroscopy system. Wire impairment in the form of craters, holes, microcracks, redeposition of solidified material, debris attachment on the surface was obtained. Parametric studies were carried out to investi作者: 離開就切除 時間: 2025-3-27 20:03 作者: Fortify 時間: 2025-3-28 00:22 作者: 貪婪地吃 時間: 2025-3-28 02:19
Book 2019 were imagined and articulated in literature, painting, film and science. As a whole, the book opensup a new understanding of the ways in which sculptures, as real or imagined objects, have fundamentally shaped approaches to and receptions of the past in relation to sex, gender and sexuality..Chapte作者: 全面 時間: 2025-3-28 08:54
