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標題: Titlebook: Gallium Nitride Electronics; Rüdiger Quay Book 2008 Springer-Verlag Berlin Heidelberg 2008 Materials for electronics.Materials processing. [打印本頁]

作者: POL    時間: 2025-3-21 16:08
書目名稱Gallium Nitride Electronics影響因子(影響力)




書目名稱Gallium Nitride Electronics影響因子(影響力)學科排名




書目名稱Gallium Nitride Electronics網(wǎng)絡公開度




書目名稱Gallium Nitride Electronics網(wǎng)絡公開度學科排名




書目名稱Gallium Nitride Electronics被引頻次




書目名稱Gallium Nitride Electronics被引頻次學科排名




書目名稱Gallium Nitride Electronics年度引用




書目名稱Gallium Nitride Electronics年度引用學科排名




書目名稱Gallium Nitride Electronics讀者反饋




書目名稱Gallium Nitride Electronics讀者反饋學科排名





作者: Foreshadow    時間: 2025-3-21 21:25
0933-033X materials to packaging.Interdisciplinary approach.Includes s.Gallium Nitride Electronics. covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of device
作者: yohimbine    時間: 2025-3-22 00:43
https://doi.org/10.1007/978-3-642-28909-5n (MOCVD) is analyzed systematically. Nitride-specific material characterization, doping, and material quality issues are analyzed. Substrate properties are reviewed systematically with respect to electronic requirements.
作者: Locale    時間: 2025-3-22 07:48
Annette Bruce Dr.,Christoph Jerominchottky and ohmic contacts, and lithography of optically transparent materials are discussed. State-of-the art recess processes and passivation technologies are analyzed. Bipolar device technology issues are reviewed.
作者: concentrate    時間: 2025-3-22 10:27

作者: Somber    時間: 2025-3-22 15:39
Book 2008 graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics..
作者: Somber    時間: 2025-3-22 17:46

作者: 基因組    時間: 2025-3-22 22:00
Device Processing Technology,chottky and ohmic contacts, and lithography of optically transparent materials are discussed. State-of-the art recess processes and passivation technologies are analyzed. Bipolar device technology issues are reviewed.
作者: 肥料    時間: 2025-3-23 03:21
Device Characterization and Modeling, involving pulsed-characterization and other advanced techniques are discussed. Large-signal characterization and modeling are discussed for nitride devices, including the modeling of contacts, diodes, dispersion, and thermal aspects.
作者: 煩躁的女人    時間: 2025-3-23 05:40
A Practical Case for Using Agile Methods,t between 0.5 and 100 GHz. Low-noise amplifiers are presented and analyzed for high-dynamic range, robustness, and high linearity. The last section of the chapter treats other circuits functions such as mixers and oscillators. Again, nitride-specific advantages and challenges are investigated.
作者: PLIC    時間: 2025-3-23 12:41
Circuit Considerations and III-N Examples,t between 0.5 and 100 GHz. Low-noise amplifiers are presented and analyzed for high-dynamic range, robustness, and high linearity. The last section of the chapter treats other circuits functions such as mixers and oscillators. Again, nitride-specific advantages and challenges are investigated.
作者: Hyperplasia    時間: 2025-3-23 16:24

作者: 物種起源    時間: 2025-3-23 20:40

作者: miscreant    時間: 2025-3-23 22:17

作者: collagenase    時間: 2025-3-24 05:07

作者: 整頓    時間: 2025-3-24 07:39

作者: 喚醒    時間: 2025-3-24 13:13
Epilogue: The Extent of AgilityIn Chapter 7, nitride-specific device and circuit reliability issues and device failure mechanisms are analyzed and described systematically.
作者: omnibus    時間: 2025-3-24 17:32
Dominik Maximini,Juliane PilsterThe last Chapter 8 describes integration and packaging considerations, thermal-mounting and thermal-packaging considerations, for state-of-the-art amplifiers, and subsystems.
作者: nephritis    時間: 2025-3-24 21:11

作者: 云狀    時間: 2025-3-24 23:16

作者: 炸壞    時間: 2025-3-25 06:43

作者: 索賠    時間: 2025-3-25 09:27
Integration, Thermal Management, and Packaging,The last Chapter 8 describes integration and packaging considerations, thermal-mounting and thermal-packaging considerations, for state-of-the-art amplifiers, and subsystems.
作者: Ganglion    時間: 2025-3-25 12:03

作者: ANT    時間: 2025-3-25 18:33
Annette Bruce Dr.,Christoph Jeromingate lengths down to 30,nm and cut-off frequencies up to 190,GHz. Thus, for this class of devices, specific field-effect transistor problems such as Schottky and ohmic contacts, and lithography of optically transparent materials are discussed. State-of-the art recess processes and passivation techno
作者: 使迷惑    時間: 2025-3-26 00:03
Herausforderungen einer neuen Zeit,-specific questions. As frequency dispersion is a major source of performance and device degradation, the characterization and reduction of dispersion involving pulsed-characterization and other advanced techniques are discussed. Large-signal characterization and modeling are discussed for nitride d
作者: 辯論的終結    時間: 2025-3-26 01:36
A Practical Case for Using Agile Methods,t between 0.5 and 100 GHz. Low-noise amplifiers are presented and analyzed for high-dynamic range, robustness, and high linearity. The last section of the chapter treats other circuits functions such as mixers and oscillators. Again, nitride-specific advantages and challenges are investigated.
作者: Postmenopause    時間: 2025-3-26 07:10
Transformations for Code Generation,s of system introduction. Some great achievements have been made, and others are yet to come: we will see higher operation frequencies, greater wafer formats, still higher output powers, and great results in linearity, efficiency, and bandwidth. However, as the experience of the GaAs devices has pro
作者: Obverse    時間: 2025-3-26 08:31
https://doi.org/10.1007/978-3-540-71892-5Materials for electronics; Materials processing; Microelectronics; Semiconductors; electrical engineerin
作者: 存在主義    時間: 2025-3-26 16:08

作者: 逃避責任    時間: 2025-3-26 20:47
Device Processing Technology,gate lengths down to 30,nm and cut-off frequencies up to 190,GHz. Thus, for this class of devices, specific field-effect transistor problems such as Schottky and ohmic contacts, and lithography of optically transparent materials are discussed. State-of-the art recess processes and passivation techno
作者: 發(fā)酵劑    時間: 2025-3-26 21:46
Device Characterization and Modeling,-specific questions. As frequency dispersion is a major source of performance and device degradation, the characterization and reduction of dispersion involving pulsed-characterization and other advanced techniques are discussed. Large-signal characterization and modeling are discussed for nitride d
作者: 合唱隊    時間: 2025-3-27 03:31
Circuit Considerations and III-N Examples,t between 0.5 and 100 GHz. Low-noise amplifiers are presented and analyzed for high-dynamic range, robustness, and high linearity. The last section of the chapter treats other circuits functions such as mixers and oscillators. Again, nitride-specific advantages and challenges are investigated.
作者: 吊胃口    時間: 2025-3-27 08:30

作者: 套索    時間: 2025-3-27 12:58

作者: 啞劇    時間: 2025-3-27 15:27

作者: 捐助    時間: 2025-3-27 20:35

作者: Conscientious    時間: 2025-3-27 22:50
1431-0082 r Graphischen Datenverarbeitung und des Computer Aided Design (CAD). Der effektive Einsatz dieser Methoden in den verschiedenen Darstellungsbereichen der Graphischen Datenverarbeitung, wie CAD-, Animations- oder Visualisierungssystemen, erfordert eine intensive Abstimmung und Zusammenarbeit der Fach
作者: 身心疲憊    時間: 2025-3-28 03:29
When Mediatization Hits the Grounddministration at the University of Texas, Austin and formerly a faculty member at Purdue University, University of Virginia and Yale University), a pioneer in business modelling, who has inspired many multi-disciplinary approaches to problem solving in the business environment.
作者: Choreography    時間: 2025-3-28 09:11
Optimal Design of CSADT with Multiple Stresses,he .th quantile of product’s lifetime under use condition. Optimal test variables are given, including: levels of each stress, total sample size and testing time, and sample size and testing time at each stress combination. Finally, simulation examples are presented to illustrate the proposed method.
作者: Arrhythmia    時間: 2025-3-28 13:28

作者: BLA    時間: 2025-3-28 14:48
Uwe Seebacher technique have been explored to improve its results. We report herein the case of a 44-year-old female patient with an obstructive cancer of the sigmoid colon and synchronous bilateral colorectal liver metastases, treated with the so-called “mini-ALPPS” approach.
作者: NAV    時間: 2025-3-28 21:02
Enhancement of MRR of Inconel 718 During EDM by Numerical and Experimental Approachesal results and found that experimental results were closed?to predicted values. Simulation results showed that both crater radius and depth increased with increasing pulse on-time. Experimental results show that pulse on-time and peak were the significant parameter for MRR of INCONEL 718, but MRR de
作者: BACLE    時間: 2025-3-29 02:15
Martin-Georg Lehner allows the control of the data generated by the device by its owner. The platform places the user as an active participant in the data market, behaving as its own data intermediary for potential consumers by monitoring, controlling, and negotiating the usage of their data.
作者: Melodrama    時間: 2025-3-29 06:31

作者: 忘恩負義的人    時間: 2025-3-29 07:46
The Global in the Local: Scuba Diving in Greece,ecreational diving in Greece, a country with distinctive attributes such as a strong maritime identity and a sponge fishing tradition, and one that is also significantly influenced by global trends. To investigate the evolution of scuba diving in Greece, this study employs specific research methods,
作者: 禁止,切斷    時間: 2025-3-29 11:37





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