標(biāo)題: Titlebook: Gallium Arsenide Digital Circuits; Omar Wing Book 1990 Kluwer Academic Publishers 1990 Multiplexer.Signal.communication.electronics.field- [打印本頁] 作者: miserly 時(shí)間: 2025-3-21 16:31
書目名稱Gallium Arsenide Digital Circuits影響因子(影響力)
書目名稱Gallium Arsenide Digital Circuits影響因子(影響力)學(xué)科排名
書目名稱Gallium Arsenide Digital Circuits網(wǎng)絡(luò)公開度
書目名稱Gallium Arsenide Digital Circuits網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Gallium Arsenide Digital Circuits被引頻次
書目名稱Gallium Arsenide Digital Circuits被引頻次學(xué)科排名
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書目名稱Gallium Arsenide Digital Circuits年度引用學(xué)科排名
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書目名稱Gallium Arsenide Digital Circuits讀者反饋學(xué)科排名
作者: 人類 時(shí)間: 2025-3-21 22:58 作者: 鋪?zhàn)?nbsp; 時(shí)間: 2025-3-22 03:30 作者: euphoria 時(shí)間: 2025-3-22 05:34
Transmission-Gate Logic,lack of DC isolation between the gate and the source or drain in a GaAs MESFET makes the use of the transmission gate problematic. Fig. 4.1 shows a transmission gate which is either a depletion or enhancement transistor. The circuit is symmetrical with respect to the gate, and current can flow from 作者: Archipelago 時(shí)間: 2025-3-22 10:36 作者: DIS 時(shí)間: 2025-3-22 13:54
Source-Coupled Logic Circuits,latter being proportional to the square of the thickness of the active layer, so that the threshold voltage is very sensitive to geometric variations. At the present time, the processing technology is such that it is difficult to limit the variation of the threshold voltage to within ±20 . while its作者: DIS 時(shí)間: 2025-3-22 17:27 作者: evaculate 時(shí)間: 2025-3-22 21:56
978-1-4612-8826-8Kluwer Academic Publishers 1990作者: 木質(zhì) 時(shí)間: 2025-3-23 04:10
Gallium Arsenide Digital Circuits978-1-4613-1541-4Series ISSN 0893-3405 作者: 指派 時(shí)間: 2025-3-23 08:18
https://doi.org/10.1007/978-1-4613-1541-4Multiplexer; Signal; communication; electronics; field-effect transistor; gate array; heterojunction bipol作者: 散步 時(shí)間: 2025-3-23 12:36
Evolution of Project Management at the same speed, the power in a GaAs circuit is usually lower. The speed advantage comes from the fact that the peak average electron velocity in intrinsic or doped GaAs is several times higher than in Si and it is reached at a much lower value of electric field, and hence with a lower supply vol作者: linear 時(shí)間: 2025-3-23 14:01 作者: 效果 時(shí)間: 2025-3-23 20:39 作者: CLASH 時(shí)間: 2025-3-23 23:07
Wendelin Sprenger,Frank Schley,Jens Hoffmannlack of DC isolation between the gate and the source or drain in a GaAs MESFET makes the use of the transmission gate problematic. Fig. 4.1 shows a transmission gate which is either a depletion or enhancement transistor. The circuit is symmetrical with respect to the gate, and current can flow from 作者: Mere僅僅 時(shí)間: 2025-3-24 04:11 作者: Unsaturated-Fat 時(shí)間: 2025-3-24 09:36
J?rn Harde,Maria Kirsche-Richterlatter being proportional to the square of the thickness of the active layer, so that the threshold voltage is very sensitive to geometric variations. At the present time, the processing technology is such that it is difficult to limit the variation of the threshold voltage to within ±20 . while its作者: abysmal 時(shí)間: 2025-3-24 11:52
Risikomanagement in der Softwareentwicklung,ansmission-gate logic, buffered ED logic, and source-coupled logic. In this concluding chapter, we shall present examples of systems design based on the GaAs technology. From the previous studies, four characteristics of GaAs circuits can be identified that are important in system design.作者: nettle 時(shí)間: 2025-3-24 17:31 作者: 可以任性 時(shí)間: 2025-3-24 21:05
Subsystems Design,ansmission-gate logic, buffered ED logic, and source-coupled logic. In this concluding chapter, we shall present examples of systems design based on the GaAs technology. From the previous studies, four characteristics of GaAs circuits can be identified that are important in system design.作者: Entropion 時(shí)間: 2025-3-24 23:19
The Springer International Series in Engineering and Computer Science380402.jpg作者: 半導(dǎo)體 時(shí)間: 2025-3-25 06:18
Transmission-Gate Logic,ar at the output. In addition, if the gate-to-source or gate-to-drain capacitance is comparable to the load capacitance C, a significant fraction of the control signal will be at the output and a logical error may be produced at the output of the inverter. Nevertheless, if the amplitude of the contr作者: 讓你明白 時(shí)間: 2025-3-25 10:43 作者: Mere僅僅 時(shí)間: 2025-3-25 12:02
Book 1990circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non- linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi- mate circuit performance 作者: 憤慨一下 時(shí)間: 2025-3-25 19:13
Wendelin Sprenger,Frank Schley,Jens Hoffmannar at the output. In addition, if the gate-to-source or gate-to-drain capacitance is comparable to the load capacitance C, a significant fraction of the control signal will be at the output and a logical error may be produced at the output of the inverter. Nevertheless, if the amplitude of the contr作者: 禮節(jié) 時(shí)間: 2025-3-25 22:05
J?rn Harde,Maria Kirsche-Richter nominal value is 0.1 . for an enhancement transistor and approximately ?1.0 . for a depletion transistor. From Chapters 3 and 5, we saw how the transfer curve and noise margins are affected by variations of the threshold voltage. In all cases, the circuit threshold shifts by an amount approximately equal to the change in the threshold voltage.作者: Aesthete 時(shí)間: 2025-3-26 02:46
Source-Coupled Logic Circuits, nominal value is 0.1 . for an enhancement transistor and approximately ?1.0 . for a depletion transistor. From Chapters 3 and 5, we saw how the transfer curve and noise margins are affected by variations of the threshold voltage. In all cases, the circuit threshold shifts by an amount approximately equal to the change in the threshold voltage.作者: 草率男 時(shí)間: 2025-3-26 06:04
0893-3405 f one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat- ing speed will further incre作者: alliance 時(shí)間: 2025-3-26 09:36
Gregor Antochin,Wolf Steinbrecher .., is often greater than the threshold voltage of the enhancement transistor of the following stage. As a result, the noise margins are often comparable to the threshold voltage, so if the latter changes, the noise margins could become unacceptably small.作者: Incommensurate 時(shí)間: 2025-3-26 16:02 作者: flourish 時(shí)間: 2025-3-26 17:22
Evolution of Project Managementeffect transistor does not have any pn-junction around its drain and source terminals and therefore the interelectrode capacitance in a GaAs device is much smaller. Smaller capacitance and higher current density, combined with a smaller voltage swing in a GaAs transistor, contribute to the realization of low-power, high-speed circuits.作者: CUB 時(shí)間: 2025-3-26 23:14 作者: Root494 時(shí)間: 2025-3-27 03:17 作者: probate 時(shí)間: 2025-3-27 07:49 作者: 現(xiàn)存 時(shí)間: 2025-3-27 11:04 作者: Liberate 時(shí)間: 2025-3-27 14:32 作者: Critical 時(shí)間: 2025-3-27 21:42
Book 1990bits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat- ing speed will further increase and th作者: 割讓 時(shí)間: 2025-3-27 22:37
Holger J. Schmidt,Carsten Baumgarth..: On successful completion of this chapter, readers will be able to: (1) explore the need for urban-scale energy and environmental modeling; (2) discuss methods of urban-scale energy and environmental modeling; (3) understand the application of modeling through case studies; and (4) appreciate the作者: Inculcate 時(shí)間: 2025-3-28 05:42 作者: 轉(zhuǎn)折點(diǎn) 時(shí)間: 2025-3-28 08:54
