標(biāo)題: Titlebook: Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip; Pascal Meinerzhagen,Adam Teman,Alexander Fish Book 2018 Springer Internationa [打印本頁] 作者: CILIA 時間: 2025-3-21 16:10
書目名稱Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip影響因子(影響力)
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書目名稱Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip被引頻次
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作者: murmur 時間: 2025-3-21 23:45
Gain-Cell eDRAMs (GC-eDRAMs): Review of Basics and Prior Art, then provides a detailed review of the state-of-the-art of GC-eDRAM design prior to the publication of this book, identifying bitcell and peripheral circuit techniques, as well as main target applications. The review of the state-of-the-art GC-eDRAMs unveils the predominant high-performance process作者: irritation 時間: 2025-3-22 02:43
Retention Time Modeling: The Key to Low-Power GC-eDRAMs,d 1-transistor-1-capacitor (1T-1C) eDRAM for reasons, such as high storage density, low bitcell leakage, logic compatibility, and suitability for two-port memories. The major drawbacks of GC-eDRAMs are their limited data retention times (RTs) and the large spread of RT across an array (Chun et al., 作者: archaeology 時間: 2025-3-22 05:50
Conventional GC-eDRAMs Scaled to Near-Threshold Voltage (NTV),cuits. This chapter argues that embedded memories should follow the trend of voltage scaling to the near-.. domain in order to facilitate SoC integration. In this context, the impact of supply voltage scaling on the retention time of a conventional 2T GC-eDRAM array is analyzed, and it is further sh作者: 萬神殿 時間: 2025-3-22 10:40 作者: 誘惑 時間: 2025-3-22 13:21 作者: 誘惑 時間: 2025-3-22 18:38 作者: 案發(fā)地點(diǎn) 時間: 2025-3-23 00:24
Conclusions,VLSI SoCs. The presented GC-eDRAM circuits were targeted at a broad range of low-power VLSI SoCs, from ultra-low power systems operated at subthreshold (sub-..) voltages to power-aware high-performance systems operated at near-threshold (near-..) or nominal supply voltages. It was shown that the key作者: 疲憊的老馬 時間: 2025-3-23 01:56 作者: 撤退 時間: 2025-3-23 08:08
Advances in Cardiac Signal Processing then provides a detailed review of the state-of-the-art of GC-eDRAM design prior to the publication of this book, identifying bitcell and peripheral circuit techniques, as well as main target applications. The review of the state-of-the-art GC-eDRAMs unveils the predominant high-performance process作者: CBC471 時間: 2025-3-23 12:57
U. Kühl,M. Pauschinger,H.-P. Schultheissd 1-transistor-1-capacitor (1T-1C) eDRAM for reasons, such as high storage density, low bitcell leakage, logic compatibility, and suitability for two-port memories. The major drawbacks of GC-eDRAMs are their limited data retention times (RTs) and the large spread of RT across an array (Chun et al., 作者: periodontitis 時間: 2025-3-23 13:57 作者: 厭惡 時間: 2025-3-23 21:31
Sequential Steps of Emergency Airway Controlnhance the data retention time for operation at near-threshold voltage (NTV). First, a 3-transistor (3T) gain-cell (GC) using a full transmission gate (TG) write port is presented. This full TG 3T GC bitcell allows fast write operations as well as memory operation at a single supply voltage, whereas作者: 能夠支付 時間: 2025-3-23 22:56 作者: ADAGE 時間: 2025-3-24 02:31 作者: sigmoid-colon 時間: 2025-3-24 08:42 作者: 打折 時間: 2025-3-24 11:38
978-3-319-86855-4Springer International Publishing AG 2018作者: ALIEN 時間: 2025-3-24 16:04
https://doi.org/10.1007/978-3-319-60402-2Memory Systems; Memory for VLSI; embedded DRAM memory; embedded memory design; memory optimization; error作者: maladorit 時間: 2025-3-24 22:46
Pascal Meinerzhagen,Adam Teman,Alexander FishProvides novel gain-cell embedded DRAM (GC-eDRAM) designs for various low-power VLSI SoC applications;.Models the statistical retention time distribution of GC-eDRAM and validates the model by silicon作者: stressors 時間: 2025-3-25 01:28
Targeted Therapies in Cancer Treatment,tems, are presented next. Finally, a short review of the state-of-the-art embedded memory technologies, including static random-access memory (SRAM) and embedded dynamic random-access memory (eDRAM), is provided, before closing the chapter with a book outline.作者: 巨頭 時間: 2025-3-25 06:44
Flow Models Studies of Heart Valves,Simulations show successful sub-.. operation for a 2T GC-eDRAM array in 0.18?μm CMOS. Furthermore, a 2T GC-eDRAM array implemented in a scaled 40?nm CMOS can be operated successfully down to the near-.. domain, while simultaneous aggressive technology and voltage scaling to the sub-.. domain are not recommended.作者: 盤旋 時間: 2025-3-25 10:29
Embedded Memories: Introduction,tems, are presented next. Finally, a short review of the state-of-the-art embedded memory technologies, including static random-access memory (SRAM) and embedded dynamic random-access memory (eDRAM), is provided, before closing the chapter with a book outline.作者: sultry 時間: 2025-3-25 14:43
Aggressive Technology and Voltage Scaling (Down to the Subthreshold Domain),Simulations show successful sub-.. operation for a 2T GC-eDRAM array in 0.18?μm CMOS. Furthermore, a 2T GC-eDRAM array implemented in a scaled 40?nm CMOS can be operated successfully down to the near-.. domain, while simultaneous aggressive technology and voltage scaling to the sub-.. domain are not recommended.作者: 翻布尋找 時間: 2025-3-25 19:51 作者: 宇宙你 時間: 2025-3-25 20:57
Conventional GC-eDRAMs Scaled to Near-Threshold Voltage (NTV),modes, voltage scaling can improve the retention time. Briefly, this chapter shows that a conventional 2T GC bitcell and array organization can be operated at a near-.. voltage (NTV), and that a WBL control scheme during retention modes can improve the retention time under voltage scaling.作者: 波動 時間: 2025-3-26 02:50 作者: prostate-gland 時間: 2025-3-26 06:44 作者: 過時 時間: 2025-3-26 10:27
Conclusions,d (sub-..) voltages to power-aware high-performance systems operated at near-threshold (near-..) or nominal supply voltages. It was shown that the key to achieve energy efficiency in GC-eDRAM is a proper understanding and control of the factors that determine the data retention time and its statistical distribution.作者: 動物 時間: 2025-3-26 16:26 作者: 要塞 時間: 2025-3-26 17:45 作者: 有機(jī)體 時間: 2025-3-26 23:29
Spatial Data Mining and Knowledge Discovery, the weaker data level among “0” and “1” is presented. A simulation based proof of concept is provided for a 65?nm CMOS node. A redundant 4T GC bitcell for soft error tolerance is presented next. This 4T GC offers per-cell redundancy at a small area cost and enables GC-eDRAM array architectures with a parity column for error correction.作者: 背叛者 時間: 2025-3-27 02:18
Quality of Life in Celiac Disease,d (sub-..) voltages to power-aware high-performance systems operated at near-threshold (near-..) or nominal supply voltages. It was shown that the key to achieve energy efficiency in GC-eDRAM is a proper understanding and control of the factors that determine the data retention time and its statistical distribution.作者: –DOX 時間: 2025-3-27 06:50 作者: Blazon 時間: 2025-3-27 09:52 作者: coddle 時間: 2025-3-27 16:29 作者: ASSAY 時間: 2025-3-27 18:03
Sequential Steps of Emergency Airway Controlthe retention time. Finally, as an assist technique to reduce accumulated pessimism from assuming worst-case process, voltage, temperature (PVT) conditions and write disturb activities, a replica technique for optimum refresh timing is presented, and its effectiveness is demonstrated through silicon作者: 綠州 時間: 2025-3-28 01:34
Retention Time Modeling: The Key to Low-Power GC-eDRAMs,e nominal value, as well as the statistical distribution of the per-cell retention time of 2-transistor (2T)-bitcell GC-eDRAMs, which is found to follow a log-normal distribution. The accuracy of the proposed retention time model is verified by extensive Monte Carlo (MC) and worst-case distance circ作者: CHAR 時間: 2025-3-28 03:46
Novel Bitcells and Assist Techniques for NTV GC-eDRAMs,the retention time. Finally, as an assist technique to reduce accumulated pessimism from assuming worst-case process, voltage, temperature (PVT) conditions and write disturb activities, a replica technique for optimum refresh timing is presented, and its effectiveness is demonstrated through silicon作者: 財政 時間: 2025-3-28 07:35
GC bitcells are evaluated under aggressive technology and voltage scaling (down to the subthreshold domain), before novel bitcells for aggressively scaled CMOS nodes and soft-error tolerance as presented, including a 4-transistor GC with partial internal feedback and a 4-transistor GC with built-in redundancy..978-3-319-86855-4978-3-319-60402-2作者: 漂亮才會豪華 時間: 2025-3-28 14:28 作者: 剛開始 時間: 2025-3-28 15:35
Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip978-3-319-60402-2作者: ABASH 時間: 2025-3-28 19:17
https://doi.org/10.1007/978-3-030-33196-2Scarlett Johansson; Celebrity studies; Contemporary film star; Stardom; Gender and celebrity; Black widow作者: 膠狀 時間: 2025-3-29 01:28
