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標(biāo)題: Titlebook: GaP Heteroepitaxy on Si(100); Benchmarking Surface Henning D?scher Book 2013 Springer International Publishing Switzerland 2013 Anti-phase [打印本頁]

作者: 變更    時間: 2025-3-21 18:04
書目名稱GaP Heteroepitaxy on Si(100)影響因子(影響力)




書目名稱GaP Heteroepitaxy on Si(100)影響因子(影響力)學(xué)科排名




書目名稱GaP Heteroepitaxy on Si(100)網(wǎng)絡(luò)公開度




書目名稱GaP Heteroepitaxy on Si(100)網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱GaP Heteroepitaxy on Si(100)被引頻次




書目名稱GaP Heteroepitaxy on Si(100)被引頻次學(xué)科排名




書目名稱GaP Heteroepitaxy on Si(100)年度引用




書目名稱GaP Heteroepitaxy on Si(100)年度引用學(xué)科排名




書目名稱GaP Heteroepitaxy on Si(100)讀者反饋




書目名稱GaP Heteroepitaxy on Si(100)讀者反饋學(xué)科排名





作者: Flounder    時間: 2025-3-21 21:32

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作者: 安撫    時間: 2025-3-22 04:46
https://doi.org/10.1007/978-1-349-11821-2s such as industrial scalability, reliable process control and established preparation of phosphorus containing III–V compounds, MOVPE has become the dominant process for the manufacture of laser diodes, multi-junction solar cells, and LEDs.
作者: 藝術(shù)    時間: 2025-3-22 10:11
Experimental,s such as industrial scalability, reliable process control and established preparation of phosphorus containing III–V compounds, MOVPE has become the dominant process for the manufacture of laser diodes, multi-junction solar cells, and LEDs.
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作者: ETCH    時間: 2025-3-22 17:26
The First Five Psychotherapy Sessionsinterface necessitating a suitable substrate preparation prior to heteroepitaxy. New defect mechanisms—typically not observed in III–V homoepitaxy—arise from the interface with the Si(100) substrate and need to be controlled to achieve defect concentrations suitable for applications in advanced optoelectronic devices.
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Book 2013photovoltaics, and beyond. The performance of optoelectronic devices is still?severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis?reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/
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https://doi.org/10.1007/978-1-349-11821-2nd semiconductors, by chemical vapor deposition (CVD) processes. The required chemical elements for the formation of epitaxial layers are provided at the substrate surface by thermal decomposition (pyrolysis) of metal-organics or metal hydrides. In contrast to molecular beam epitaxy (MBE), the growt
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https://doi.org/10.1007/978-3-319-66047-9 the crucial III–V/Si(100) interface. A variety of surface-sensitive methods was applied to establish suitable Si(100) substrate preparation and subsequent GaP growth free of anti-phase domains (APDs), by analyzing the substrate surface, the interface and the epitaxial film resulting from the hetero
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https://doi.org/10.1007/978-3-319-02880-4Anti-phase Disorder; III-V Semiconductor Heteroepitaxy on Silicon Substrates; In Situ Reflectance Anis
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GaP Heteroepitaxy on Si(100)978-3-319-02880-4Series ISSN 2190-5053 Series E-ISSN 2190-5061
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作者: 細(xì)胞學(xué)    時間: 2025-3-25 09:54

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作者: ear-canal    時間: 2025-3-26 03:18
2190-5053 ion of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.978-3-319-37955-5978-3-319-02880-4Series ISSN 2190-5053 Series E-ISSN 2190-5061
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0065-2598 ess.This volume focuses on computational biology and bioinfoThe 2nd World Congress on Geriatrics and Neurodegenerative Disease Research (GeNeDis 2016), focuses on recent advances in geriatrics and neurodegeneration, ranging from basic science to clinical and pharmaceutical developments and provides
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https://doi.org/10.1007/978-1-4615-2087-0uent mention of clothing and the level of sartorial description shown in the first series of the stories. Offering a close textual analysis of several . stories, Hunt considers the symbolism of dress and how this might have been interpreted by the contemporary middle-class readership.
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作者: 玩忽職守    時間: 2025-3-26 22:16
Albert Heindlfor the artistic transformation of the social world. The strategy involved an iconoclastic attack on Croce’s ‘a(chǎn)ristocratic club’, art as an autonomous realm, and an affirmation of art as the conscious fashioning of all of social life. As Mayakovsky declared at the end of 1918: ‘we do not need a dead
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A Methodology to Measure Flow Fields at Bridge Piers in the Presence of Large Wood Debris Accumulatper proposed a new methodology to measure the flow fields in the presence of debris accumulation using an acoustic Doppler velocimeter (ADV). The methodology consists in applying a matrix of rotation on the instantaneous velocity measured in the three dimensions to access locations underneath the de
作者: 原來    時間: 2025-3-27 06:16
Frieder Middelhauvemistry more closely resembles Si than Al chemistry. Boron may be entrapped in the clay lattice by substituting for Al. and/or Si. ions. There are numerous borosilicate minerals in soils, but only tourmaline and axinite may be of significance. Boric acid has a trigonal structure while borate anion has a tetrahedral structure.
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Book 2020Latest editionous patterns in asynchronous programming. Thebook concludes with a discussion of the criticisms of design patterns and chapters on anti-patterns..Each chapter includes a Q&A session that clears up any doubts and covers the pros and cons of each pattern. FAQs will help you consolidate your knowledge.
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Einleitung,fe (Marmot 2007, S. 1161). Diese Schlussfolgerung zieht Michael Marmot, der englische Epidemiologe und Vorsitzende der WHO Commission on Social Determinants of Health, angesichts der von der Kommission zusammengetragenen Forschungsbelege zu den sozialen Einflussfaktoren auf Gesundheit. Der Abschluss




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