標(biāo)題: Titlebook: Ferroelectric-Gate Field Effect Transistor Memories; Device Physics and A Byung-Eun Park,Hiroshi Ishiwara,Sung-Min Yoon Book 2020Latest edi [打印本頁(yè)] 作者: GLOAT 時(shí)間: 2025-3-21 16:43
書(shū)目名稱Ferroelectric-Gate Field Effect Transistor Memories影響因子(影響力)
書(shū)目名稱Ferroelectric-Gate Field Effect Transistor Memories影響因子(影響力)學(xué)科排名
書(shū)目名稱Ferroelectric-Gate Field Effect Transistor Memories網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Ferroelectric-Gate Field Effect Transistor Memories網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Ferroelectric-Gate Field Effect Transistor Memories被引頻次
書(shū)目名稱Ferroelectric-Gate Field Effect Transistor Memories被引頻次學(xué)科排名
書(shū)目名稱Ferroelectric-Gate Field Effect Transistor Memories年度引用
書(shū)目名稱Ferroelectric-Gate Field Effect Transistor Memories年度引用學(xué)科排名
書(shū)目名稱Ferroelectric-Gate Field Effect Transistor Memories讀者反饋
書(shū)目名稱Ferroelectric-Gate Field Effect Transistor Memories讀者反饋學(xué)科排名