標(biāo)題: Titlebook: Emerging VLSI Devices, Circuits and Architectures; Proceedings of the 2 Anu Gupta,Jai Gopal Pandey,Devesh Dwivedi Conference proceedings 20 [打印本頁] 作者: encroach 時(shí)間: 2025-3-21 18:14
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書目名稱Emerging VLSI Devices, Circuits and Architectures讀者反饋學(xué)科排名
作者: 表臉 時(shí)間: 2025-3-21 22:25 作者: DUCE 時(shí)間: 2025-3-22 01:47 作者: DEI 時(shí)間: 2025-3-22 08:35
Demonstration of Doped-HfO2 Ferroelectric Based Double Layer Stacked NC FinFET,tc. Further, the double-layered FE device with different materials (FE1+FE2) can serve as a prototype in advancing the NC-based devices to commercially viable technology through its scaling attributes along with better device performance.作者: 哀悼 時(shí)間: 2025-3-22 10:27 作者: Sedative 時(shí)間: 2025-3-22 15:16
,Design and?Analysis of?Low-Power Protection Circuits for?LDO Regulators, transitioning in 1?.s as the load fluctuates between 1mA and 80mA, within a supply voltage range of 1.7–2.2?V. The integrated system, comprising the regulator, bandgap reference (BGR) circuit, UVLO, TSD, and CFC, has a 41?.A of maximum quiescent current (.). The system achieves overall efficiencies作者: Sedative 時(shí)間: 2025-3-22 18:24 作者: 聽覺 時(shí)間: 2025-3-23 01:12
Molecular Imaging in Multiple Myelomaon ITO-coated glass substrate for absorbance and transmittance measurement. The Tauc extrapolation method used ellipsometry and absorption data to calculate the optical bandgap. The bandgap obtained via these measurements matches with earlier reported data. A self-powered photovoltaic organic photod作者: Arboreal 時(shí)間: 2025-3-23 04:58 作者: 廢墟 時(shí)間: 2025-3-23 06:36 作者: Rodent 時(shí)間: 2025-3-23 23:09
https://doi.org/10.1007/978-981-99-1858-4s. This also enables designers to analyze different result reports and fix issues accordingly. This algorithm ensures that standard cells are clean by construction for pin accessibility during the library development phase itself.作者: Prostaglandins 時(shí)間: 2025-3-24 05:28
1876-1100 Processor Design; CAD for VLSI; Emerging Integrated Circuits and Systems; VLSI Testing and Security; and System-Level Design..978-981-97-8383-0978-981-97-5269-0Series ISSN 1876-1100 Series E-ISSN 1876-1119 作者: 圓錐體 時(shí)間: 2025-3-24 08:22 作者: 增減字母法 時(shí)間: 2025-3-24 12:57 作者: 異教徒 時(shí)間: 2025-3-24 17:47
https://doi.org/10.1007/978-1-61779-989-1-Digital converter (TDC) under test. This circuit technique avoids the use of costly sophisticated instruments which are required for the measurement of high-speed clocks. The time resolution, i.e. 5 ps is verified using input clocks at 25 MHz.作者: PACT 時(shí)間: 2025-3-24 21:24
https://doi.org/10.1007/978-1-4899-3668-4?.C to 125?.C. The design also includes the current trimming feature through an external resistor to cater to the requirements of different types of thermistors. The circuit has been designed using a 0.18?.m CMOS process.作者: 事與愿違 時(shí)間: 2025-3-25 01:23 作者: 高射炮 時(shí)間: 2025-3-25 04:27 作者: Resistance 時(shí)間: 2025-3-25 07:47
A Low Jitter and High-Speed Flash TDC with PVT Calibration and Its Testing Methodology,-Digital converter (TDC) under test. This circuit technique avoids the use of costly sophisticated instruments which are required for the measurement of high-speed clocks. The time resolution, i.e. 5 ps is verified using input clocks at 25 MHz.作者: alcohol-abuse 時(shí)間: 2025-3-25 14:51
,High-Precision Programmable Thermistor Linearization ASIC for?Electro-Optical Payload Applications,?.C to 125?.C. The design also includes the current trimming feature through an external resistor to cater to the requirements of different types of thermistors. The circuit has been designed using a 0.18?.m CMOS process.作者: 軍械庫 時(shí)間: 2025-3-25 17:10 作者: SLAY 時(shí)間: 2025-3-25 21:49
https://doi.org/10.1007/978-3-540-31292-5 leakage between adjacent stages of clock booster is prevented with the help of a circuit that blocks the reverse flowing charges. The simulation results show that the proposed circuit gives an output more than 1 V while for similar conditions a conventional clock booster provides less than 500 mV.作者: BRINK 時(shí)間: 2025-3-26 01:40 作者: monopoly 時(shí)間: 2025-3-26 08:17 作者: 粉筆 時(shí)間: 2025-3-26 11:13
E. Edmund Kim,Edward F. Jacksonogether to tune the inductance and hence the operating range of frequency. The proposed AI is designed using CMOS 180 nm technology and simulation shows that for 3–4 GHz frequency range ranging from 13-15nH. The Q-factor and inductance at 3.6 GHz operating frequency is 1750 and 14nH. At 1.8 V supply it dissipates 3.8 mW of power.作者: Compatriot 時(shí)間: 2025-3-26 16:42
https://doi.org/10.1007/978-3-031-35098-6r supply, with a power consumption of 754?μW. The proposed MREC works in the MHz range and the maximum working frequency is 25?MHz. To assess the flexibility of the proposed MREC during circuit employment, two memristors were connected in parallel and performance was compared with a single memristor.作者: asthma 時(shí)間: 2025-3-26 17:18
Results and Problems in Cell DifferentiationThe total power consumption of the circuit is found to be 57?nW and achieves FoM of 336 fJ/conversion for 7 bits of operation with a power supply of 0.5?V. The proposed design has the lowest power consumption and FoM among the reported current mode and neuromorphic ADCs.作者: agnostic 時(shí)間: 2025-3-26 23:09
https://doi.org/10.1007/BFb0018037uch as dielectric constant (K) has been considered. To assess the sensing potential of both devices, we also compared the sensitivity, and noise characteristics of the stacked thin layers of HfO./SiO. and Al.O./SiO.. From the comparison, the stacked HfO./SiO. thin layer shows the better sensitivity and noise characteristics.作者: HPA533 時(shí)間: 2025-3-27 05:02
,A 0.1–4.71 GHz Integer-N CP-PLL-Based Low-Power Frequency Synthesizer for High-Speed Applications,hip area of 0.013 .. The proposed synthesizer exhibits a phase noise of –142.54 dBc/Hz at an output frequency of 4 GHz. This synthesizer achieves a Figure of Merit (FoM) of –174.49 dB. The synthesizer has potential applications in devices such as radio receivers, televisions, mobile phones, satellite receivers, and GPS systems.作者: output 時(shí)間: 2025-3-27 07:08
,A Current-Mode-Logic-Based PFD–Charge Pump Circuit for Low-Reference Spur PLLs,equency divider. The reference frequency is 50?MHz. The circuits are designed in TSMC 65?nm process, and consume 0.81 mW from a 1.2-V power supply. In simulations, the PLL exhibits an in-band phase noise of ?112dBc/Hz at a 100-kHz offset, a reference spur of ?72.2 dBc, and a lock time of 2.6?μs.作者: LVAD360 時(shí)間: 2025-3-27 12:59
Design and Analysis of Differential Configuration Based Active Inductor for 5G Sub-6 GHz Applicatioogether to tune the inductance and hence the operating range of frequency. The proposed AI is designed using CMOS 180 nm technology and simulation shows that for 3–4 GHz frequency range ranging from 13-15nH. The Q-factor and inductance at 3.6 GHz operating frequency is 1750 and 14nH. At 1.8 V supply it dissipates 3.8 mW of power.作者: Loathe 時(shí)間: 2025-3-27 14:42
A Dual-Mode High-Frequency Grounded Memristor Emulator Circuit,r supply, with a power consumption of 754?μW. The proposed MREC works in the MHz range and the maximum working frequency is 25?MHz. To assess the flexibility of the proposed MREC during circuit employment, two memristors were connected in parallel and performance was compared with a single memristor.作者: 異教徒 時(shí)間: 2025-3-27 21:07 作者: gastritis 時(shí)間: 2025-3-27 21:58 作者: 獨(dú)行者 時(shí)間: 2025-3-28 06:09
Conference proceedings 2025rs presented in this book are carefully reviewed and selected from 220 submissions. They are organized in topical sections as follows: Low-Power Integrated Circuits and Devices; FPGA-Based Design and Embedded Systems; Memory, Computing, and Processor Design; CAD for VLSI; Emerging Integrated Circuit作者: 妨礙 時(shí)間: 2025-3-28 08:37 作者: prosperity 時(shí)間: 2025-3-28 11:34 作者: 熱心 時(shí)間: 2025-3-28 16:26 作者: wreathe 時(shí)間: 2025-3-28 21:22
Conference proceedings 2025rated Circuits and Devices; FPGA-Based Design and Embedded Systems; Memory, Computing, and Processor Design; CAD for VLSI; Emerging Integrated Circuits and Systems; VLSI Testing and Security; and System-Level Design..作者: SUGAR 時(shí)間: 2025-3-28 23:23 作者: 緯度 時(shí)間: 2025-3-29 07:03
Emerging VLSI Devices, Circuits and Architectures978-981-97-5269-0Series ISSN 1876-1100 Series E-ISSN 1876-1119 作者: COMA 時(shí)間: 2025-3-29 10:04
https://doi.org/10.1007/978-981-15-9456-4ith high signal-to-quantization noise ratio (SQNR). It also covers the operating principle, limitations, and improvements achieved using the noise shaping technique. The NS-SAR suffers from quantizer saturation at high input amplitudes, where filtered quantization noise gets added to the input signa作者: 易改變 時(shí)間: 2025-3-29 13:48 作者: 神秘 時(shí)間: 2025-3-29 18:16
https://doi.org/10.1007/978-3-642-34303-2essed through Cadence Virtuoso simulations within the CMOS 180nm technology by utilizing components such as a phase frequency detector, a differential ring oscillator, a charge pump, a loop filter, a level shifter, and a divider. The simulations revealed that the synthesizer had a power consumption 作者: NOT 時(shí)間: 2025-3-29 22:26
https://doi.org/10.1007/978-1-60761-901-7. The primary advantages are lower voltage swings and consequently faster current switching. This reduces clock feedthrough and charge injection which in turn achieves low PLL reference spurs. The overall PLL system has been demonstrated via simulations. The PLL uses the proposed tri-state CML phase作者: 充氣球 時(shí)間: 2025-3-30 01:11 作者: Microaneurysm 時(shí)間: 2025-3-30 06:51
https://doi.org/10.1007/978-3-540-77496-9ir improved short channel effect and higher effective width in the same area footprint. This research investigates the impact of self-heating and substrate effects on the small signal conductance and capacitance of FinFET and nanosheet devices using Synopsys TCAD. The presence of substrate introduce作者: 使乳化 時(shí)間: 2025-3-30 11:26 作者: excrete 時(shí)間: 2025-3-30 12:45
E. Edmund Kim,Edward F. Jacksonl configuration for a high Quality Factor (Q-factor). This work uses the concept of feedback connected transconductors, in which the differential configuration of the proposed AI improves the overall inductance and lowers series resistance due to its high transconductance. To stabilize the inductanc作者: Between 時(shí)間: 2025-3-30 20:23 作者: 秘方藥 時(shí)間: 2025-3-31 00:22 作者: 增減字母法 時(shí)間: 2025-3-31 03:42 作者: facetious 時(shí)間: 2025-3-31 07:55
https://doi.org/10.1007/978-3-642-30302-9its: Under Voltage Lock Out (UVLO), Current Foldback Circuit (CFC), and Thermal Shutdown (TSD) circuit based on SCL 180 nm CMOS process. The proposed capless LDO ensures a stable output voltage of 1.5 V for input voltages ranging from 1.7 to 2.2 V, supporting a maximum load current of 80 mA with a l作者: CORE 時(shí)間: 2025-3-31 09:34 作者: NOT 時(shí)間: 2025-3-31 14:24
https://doi.org/10.1007/978-1-4899-3668-4rature measurements. This paper proposes a methodology to linearize the output signal of the thermistor. It significantly improves the thermistor linearity and reduces measurement error for the temperature range of ?20?.C to 60?.C. The achieved correlation coefficient is .0.99997, and the measuremen作者: MURKY 時(shí)間: 2025-3-31 18:56 作者: admission 時(shí)間: 2025-3-31 22:50
Results and Problems in Cell Differentiationre of ADC both play very important roles, especially for low-power, low-current sensing scenarios. In this paper, a novel neuron architecture based on the Leaky & Integrate Fire (LIF) model is proposed to realize a low-power, low-current sensing ADC with power scalability. ADC works for input signal作者: intercede 時(shí)間: 2025-4-1 03:57
Molecular Interactions of Actinal Shutdown (TSD), and Current Foldback Circuit (CFC) for overload/short-circuit protection for a Low Dropout (LDO) regulator with a fully CMOS-based Bandgap Reference (BGR) circuit. The focus is on enhancing the lifespan and effectiveness of the regulator while safeguarding it from excessive loads 作者: OVER 時(shí)間: 2025-4-1 07:26 作者: debacle 時(shí)間: 2025-4-1 12:53 作者: sacrum 時(shí)間: 2025-4-1 18:00
https://doi.org/10.1007/978-981-97-5269-0communication channels (information theory); communication systems; computer hardware; computer network作者: 水獺 時(shí)間: 2025-4-1 21:04 作者: 加強(qiáng)防衛(wèi) 時(shí)間: 2025-4-1 23:18
Lecture Notes in Electrical Engineeringhttp://image.papertrans.cn/f/image/320572.jpg作者: 容易生皺紋 時(shí)間: 2025-4-2 03:27 作者: NOTCH 時(shí)間: 2025-4-2 07:09
An Improved Clock Booster Circuit Suitable for Boost Converters in Energy Harvesting Environments,ded. Our proposed circuit operates with a supply of 300 mV. The proposed circuit reduces leakage with the help of the adaptive body effect. The charge leakage between adjacent stages of clock booster is prevented with the help of a circuit that blocks the reverse flowing charges. The simulation resu作者: 制度 時(shí)間: 2025-4-2 11:35
