標(biāo)題: Titlebook: Electronic Structure of Semiconductor Interfaces; Winfried M?nch Book 2024 The Editor(s) (if applicable) and The Author(s), under exclusiv [打印本頁] 作者: Precise 時間: 2025-3-21 16:16
書目名稱Electronic Structure of Semiconductor Interfaces影響因子(影響力)
書目名稱Electronic Structure of Semiconductor Interfaces影響因子(影響力)學(xué)科排名
書目名稱Electronic Structure of Semiconductor Interfaces網(wǎng)絡(luò)公開度
書目名稱Electronic Structure of Semiconductor Interfaces網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Electronic Structure of Semiconductor Interfaces被引頻次
書目名稱Electronic Structure of Semiconductor Interfaces被引頻次學(xué)科排名
書目名稱Electronic Structure of Semiconductor Interfaces年度引用
書目名稱Electronic Structure of Semiconductor Interfaces年度引用學(xué)科排名
書目名稱Electronic Structure of Semiconductor Interfaces讀者反饋
書目名稱Electronic Structure of Semiconductor Interfaces讀者反饋學(xué)科排名
作者: 百科全書 時間: 2025-3-21 23:29
Synthesis Lectures on Engineering, Science, and Technologyhttp://image.papertrans.cn/f/image/320529.jpg作者: 整頓 時間: 2025-3-22 03:54 作者: 心胸狹窄 時間: 2025-3-22 08:01
Eric Petitclerc,Peter C. Brooks because special techniques have been developed to fabricate clean metal-silicon interfaces. The barrier heights of these diodes decrease with increasing ideality factors. The analysis of these data reveals three different mechanisms, namely patches with lower barrier heights and lateral dimensions 作者: cardiovascular 時間: 2025-3-22 12:30 作者: Observe 時間: 2025-3-22 13:51 作者: Observe 時間: 2025-3-22 18:34 作者: 衰老 時間: 2025-3-23 01:15
https://doi.org/10.1007/978-3-319-23621-6e saturation position with increasing irradiation time, irrespective of whether the semiconductors are initially doped .- or .-type. The gap states of the irradiation-induced native defects result from the complex band structure in the same way as the interface-induced gap states. Therefore, it is n作者: 鋼筆尖 時間: 2025-3-23 04:17
Cervicothoracic Metastatic Spine Disease,e gap states are linked to the complex band structure of the semiconductors. They are described by two bulk parameters. One is the branch point at which the charge character of the gap states changes from acceptor- to donor-like. The second describes the interface dipole.Physically, it is given by t作者: 引起痛苦 時間: 2025-3-23 05:45 作者: Lamina 時間: 2025-3-23 09:52
Electronic Structure of Semiconductor Interfaces978-3-031-59064-1Series ISSN 2690-0300 Series E-ISSN 2690-0327 作者: 翅膀拍動 時間: 2025-3-23 15:28
https://doi.org/10.1007/978-3-031-59064-1metal semi-conductor; band gap; interface-induced gap states; band structure; semiconductor interfaces作者: RENAL 時間: 2025-3-23 18:47 作者: 彈藥 時間: 2025-3-24 01:32 作者: Capitulate 時間: 2025-3-24 03:32 作者: 沒花的是打擾 時間: 2025-3-24 08:03 作者: OREX 時間: 2025-3-24 12:35 作者: Generalize 時間: 2025-3-24 17:02
Comparison of Theoretical and Experimental Data,lectronegativities of the two solids in contact. The branch-point energies and slope parameters obtained from the experimental data are briefly compared with the results of the theoretical calculations presented in the previous chapter.作者: Leisureliness 時間: 2025-3-24 20:16 作者: meretricious 時間: 2025-3-25 01:09
Book 2024or .Schottky. contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induce作者: mercenary 時間: 2025-3-25 05:04 作者: 咯咯笑 時間: 2025-3-25 11:23
The Metastatic Process: An Overview,tivities of the metal and the semiconductor. The respective slope parameters and the branch-point energies thus determine the . barrier heights. In this chapter, the calculated values of these quantities are discussed.作者: dilute 時間: 2025-3-25 14:17
https://doi.org/10.1007/978-3-319-23621-6structures at semiconductor interfaces is caused by defects cannot simply be drawn from this correlation. It ultimately proved to be false, as no experimental evidence for the existence of interface-induced defects was found.作者: PHIL 時間: 2025-3-25 19:36 作者: MELD 時間: 2025-3-25 20:20
From the , Rule to Interface-Induced Gap States,ticular, the observation of the adatom-induced shifts in core levels of the semiconductors shows that the interface dipole can be described by the difference in the electronegativities of metal and semiconductor.作者: 事先無準(zhǔn)備 時間: 2025-3-26 03:47 作者: Adenoma 時間: 2025-3-26 07:53
Irradiation- or Native-Defect-Induced Gap States,structures at semiconductor interfaces is caused by defects cannot simply be drawn from this correlation. It ultimately proved to be false, as no experimental evidence for the existence of interface-induced defects was found.作者: 改正 時間: 2025-3-26 11:30 作者: Geyser 時間: 2025-3-26 12:55 作者: diabetes 時間: 2025-3-26 20:17 作者: ACTIN 時間: 2025-3-26 23:51 作者: Archipelago 時間: 2025-3-27 04:42 作者: 發(fā)展 時間: 2025-3-27 06:09 作者: photopsia 時間: 2025-3-27 09:57 作者: 該得 時間: 2025-3-27 14:17 作者: 外來 時間: 2025-3-27 21:40
2690-0300 ly and quantitatively explains the experimentally observed barrier heights of .Schottky. contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.978-3-031-59066-5978-3-031-59064-1Series ISSN 2690-0300 Series E-ISSN 2690-0327 作者: sundowning 時間: 2025-3-27 22:46
Book 2024 the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of .Schottky. contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.作者: 牲畜欄 時間: 2025-3-28 03:08
Bettina Bühler,Wenbo V. Li,Werner Linde aus Stein, Schlamm, ?l u. dgl., ferner durch Korrosionen. Diese werden durch den Gehalt des Wassers an Salzen, Laugen, Gasen und organischen Stoffen bedingt; schlie?lich geh?ren hierher die Sch?den durch Ermüdungskorrosionen, die auf den Gehalt des Wassers an Natronlauge zurückzuführen sind.作者: 錢財 時間: 2025-3-28 08:54
Lisa Campo-Engelstein,Paul BurcherA timely exploration of ethical issues in reproductive medicine from leading scholars in the field.Fresh coverage of hot new topics, including gene editing (CRISPR), as well as continuing debates.High作者: conscribe 時間: 2025-3-28 11:32
