標題: Titlebook: Evaluation of Advanced Semiconductor Materials by Electron Microscopy; David Cherns Conference proceedings 1989 Plenum Press, New York 198 [打印本頁] 作者: 夸大 時間: 2025-3-21 16:59
書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy影響因子(影響力)
書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy影響因子(影響力)學科排名
書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy網絡公開度
書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy網絡公開度學科排名
書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy被引頻次
書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy被引頻次學科排名
書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy年度引用
書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy年度引用學科排名
書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy讀者反饋
書目名稱Evaluation of Advanced Semiconductor Materials by Electron Microscopy讀者反饋學科排名
作者: Esophagus 時間: 2025-3-21 22:06 作者: MAZE 時間: 2025-3-22 03:29
Transmission Electron Microscopy and Transmission Electron Diffraction Studies of Atomic Ordering intes such as InP or GaAs. A variety of growth techniques are used to produce these epitaxial layers such as liquid phase epitaxy (LPE), vapour phase epitaxy (VPE), molecular beam epitaxy (MBE) and organometallic vapour phase epitaxy (OMVPE).作者: 大看臺 時間: 2025-3-22 05:14
https://doi.org/10.1007/978-3-322-87537-2ntermixes with Gallium and gives rise to a thicker film, InGaAs, the Indium proportion being at least 50 %. The interface InAs/GaAs is atomically flat, whereas the interface GaAs/InAs is extremely rough. This may be a way of decreasing the elastic energy.作者: syncope 時間: 2025-3-22 08:55 作者: Harridan 時間: 2025-3-22 15:34
,Teilsystem zur Therapiedurchführung,ues can produce rather accurate results.. An urgent need exists, however, for a method which can be applied to non-centrosymmetric semiconductors and other materials which are crystalline only on a sub-micron scale.作者: Harridan 時間: 2025-3-22 17:39
High Resolution Electron Microscopy Study of Indium Distribution in InAs/GaAs Multilayersntermixes with Gallium and gives rise to a thicker film, InGaAs, the Indium proportion being at least 50 %. The interface InAs/GaAs is atomically flat, whereas the interface GaAs/InAs is extremely rough. This may be a way of decreasing the elastic energy.作者: Pericarditis 時間: 2025-3-23 00:12
Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconthod of examining superlattice reflections from both periodic and irregular multilayer structures and studies of single quantum well samples of AlGaAs/GaAs and InP/InGaAs, which give well thicknesses to near monolayer precision, are also described.作者: 喊叫 時間: 2025-3-23 03:12
Measurement of Structure-Factor Phases by Electron Diffraction for the Study of Bonding in Non-Centrues can produce rather accurate results.. An urgent need exists, however, for a method which can be applied to non-centrosymmetric semiconductors and other materials which are crystalline only on a sub-micron scale.作者: 香料 時間: 2025-3-23 07:35
0258-1221 terostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as thei作者: 落葉劑 時間: 2025-3-23 18:09
Entwicklung der Fahrdynamikregelung,tes such as InP or GaAs. A variety of growth techniques are used to produce these epitaxial layers such as liquid phase epitaxy (LPE), vapour phase epitaxy (VPE), molecular beam epitaxy (MBE) and organometallic vapour phase epitaxy (OMVPE).作者: 虛情假意 時間: 2025-3-24 01:48
Conference proceedings 1989ures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influenc作者: 相信 時間: 2025-3-24 03:45 作者: 追逐 時間: 2025-3-24 10:29 作者: Armada 時間: 2025-3-24 12:48
https://doi.org/10.1007/978-3-322-96330-7o (S/N) at high resolution is often improved by spatial averaging or Fourier filtering techniques. An image with a large number of identical contrast units is then needed, preferentially arranged on a periodic lattice.作者: 上流社會 時間: 2025-3-24 18:07 作者: Carcinogen 時間: 2025-3-24 22:19
Ein hochsensibles Jahr mit Gustavthat the method has a future in compositional analysis at a spatial resolution at, or approaching, the atomic level. Arguably the method is far from new though, as yet, we seem to be alone in making a systematic study of its breadth of application in the analysis of compositional changes at grain and phase boundaries and in man-made layer systems.作者: ASSAY 時間: 2025-3-25 02:10 作者: MOTTO 時間: 2025-3-25 03:52
Franz Wever,Otto Krisement,Hanna Sch?dlerfeatures in RHEED patterns from semiconductor surfaces and, in particular, describe some of the most significant features of rocking curves. Finally, I will examine the phenomenon of variations and oscillations of the intensity of RHEED patterns during epitaxial growth.作者: Dissonance 時間: 2025-3-25 10:41 作者: 逃避系列單詞 時間: 2025-3-25 14:00 作者: 投票 時間: 2025-3-25 17:36 作者: 跳脫衣舞的人 時間: 2025-3-25 19:58
Strains and Misfit Dislocations at Interfaceslectron Diffraction (CBED) for the measurement of local strain, and we will describe the use of a new technique, Convergent Beam Imaging (CBIM), for detecting, mapping and measuring small crystalline distortions.作者: ventilate 時間: 2025-3-26 02:40 作者: epicondylitis 時間: 2025-3-26 05:32 作者: Jogging 時間: 2025-3-26 09:25
Image Processing Applied to HRTEM Images of Interfacestunities to extract the relevant part of the information, thus simplifying the interpretation of the image. Several textbooks have appeared. which give an introduction into the subject of image processing in electron microscopy, with main applications in biology and organic materials. For these samp作者: BLANC 時間: 2025-3-26 15:26 作者: JADED 時間: 2025-3-26 20:27
High Resolution Electron Microscopy Study of Indium Distribution in InAs/GaAs Multilayers(HRTEM) in order to determine the Indium location. X-Ray diffraction has provided the thickness and periodicity of the multilayers. The ones chosen were respectively A : 0.9 monolayer (mL) and B : 1.7 mL thick according to XR measurements. From comparison of their structure we conclude that Indium i作者: GROUP 時間: 2025-3-26 22:02
Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconiconductor multilayers. It is shown that epitaxial strains in bicrystals and multilayers can be measured down to ~ 0.1% and that varying strain fields near dislocations and interfaces can be investigated with high sensitivity. It is also shown that convergent beam diffraction gives a powerful new me作者: aerial 時間: 2025-3-27 02:29 作者: 本土 時間: 2025-3-27 07:52 作者: 使腐爛 時間: 2025-3-27 09:50
Measurement of Structure-Factor Phases by Electron Diffraction for the Study of Bonding in Non-Centrmeasure with sufficient accuracy to reveal bonding effects in crystals, since the bond charge typically represents less than 0.01% of the total charge-density. For semiconductors containing a center of symmetry for which large single crystals can be grown (such as silicon), X-ray diffraction techniq作者: 護身符 時間: 2025-3-27 15:42
EDX and EELS Studies of Segregation in STEMassumed to have reached a steady-state equilibrium at a particular temperature such that the rate of capture at a sink exactly balances the rate of evaporation from the sink by thermal excitation. Subsequent rapid cooling to room temperature does not significantly alter the segregation profile. A si作者: fodlder 時間: 2025-3-27 20:39
EBIC Studies of Individual Defects in Lightly Doped Semiconductors: CdTe as an Examplea local scale, on bulk inhomogeneities and on electrically active extended defects in semiconductors.. The EBIC current arises from the collection of minority carriers created by the incident electron beam which are drifted by the electric field of a Schottky diode or of a p-n junction; they have be作者: avulsion 時間: 2025-3-28 00:46
Electronic Structure and Fermi Level Pinning Obtained with Spatially Resolved Electron Energy Loss Srs. In principle, electronic structure may also be obtained directly from the same areas by observing the electron energy loss scattering. Currently at IBM, the high resolution electron spectrometer on the HB501 scanning transmission electron microscope (STEM) is producing core loss spectra which sh作者: glacial 時間: 2025-3-28 04:25 作者: terazosin 時間: 2025-3-28 10:13 作者: DALLY 時間: 2025-3-28 11:36 作者: 充足 時間: 2025-3-28 14:50
TEM and STEM Observations of Composition Variations in III-V Semiconductors, BC and BD; their lattice parameter a and their band gap energy vary continuously with the compositions x and y. These materials are thus attractive for the fabrication of optoelectronic devices, because a suitable choice of these in principle independent compositions usually allows both the epitax作者: cognizant 時間: 2025-3-28 19:03
Transmission Electron Microscopy and Transmission Electron Diffraction Studies of Atomic Ordering inctronic and microwave devices. For these devices the alloys are usually required in the form of thin epitaxial layers grown on binary compound substrates such as InP or GaAs. A variety of growth techniques are used to produce these epitaxial layers such as liquid phase epitaxy (LPE), vapour phase ep作者: OTTER 時間: 2025-3-29 02:51
Elastic Relaxation and TEM Image Contrasts in Thin Composition-Modulated Semiconductor Crystalsmplitudes as small as 10. can produce detectable contrasts under optimum imaging conditions [1], much more than would be predicted on the basis of the perturbed projected potential alone. Strong dynamical scattering effects, stimulated by the bending of diffracting lattice planes, are primarily resp作者: monochromatic 時間: 2025-3-29 04:13 作者: 否認 時間: 2025-3-29 11:17 作者: 正式通知 時間: 2025-3-29 13:23 作者: Hangar 時間: 2025-3-29 17:44 作者: Intercept 時間: 2025-3-29 20:14
,Der Staubschutz der W?hlereinrichtungen,Luminescence spectroscopy is a singularly powerful technique for characterising semiconductor materials. For high quality materials great sensitivity exists to trace impurities and in the case of quantum wells luminescence spectra give a very clear indication of the quality of the structures which have been grown.作者: Obstacle 時間: 2025-3-30 03:58 作者: compel 時間: 2025-3-30 07:40
https://doi.org/10.1007/978-3-663-09851-5in both high misfit systems such as (001)ZnTe, (001) CdTe and (111)CdTe on (001)GaAs substrates, and low misfit ones such as (001)CdTe on (001) Cd.Zn.Te. Quantum wells and superlattices such as CdTe/ZnTe and HgTe/CdTe will also be investigated.作者: amphibian 時間: 2025-3-30 09:22 作者: CHURL 時間: 2025-3-30 13:18 作者: offense 時間: 2025-3-30 18:18
https://doi.org/10.1007/978-3-322-96330-7tunities to extract the relevant part of the information, thus simplifying the interpretation of the image. Several textbooks have appeared. which give an introduction into the subject of image processing in electron microscopy, with main applications in biology and organic materials. For these samp作者: 鋼筆記下懲罰 時間: 2025-3-30 23:24 作者: molest 時間: 2025-3-31 01:38 作者: Insul島 時間: 2025-3-31 06:48 作者: Psa617 時間: 2025-3-31 10:23
Das definitorische Gerüst des Gesamtsystems. The fine structure of these superlattice reflections is characteristically different from the corresponding structure of fundamental reflections originating from the average lattice. These diffraction effects, induced by composition modulation, are discussed and compared with strain modulation eff作者: Organonitrile 時間: 2025-3-31 15:34
,Abkürzungen und Formelzeichen,f the gap, (?.-?.)., at the dispersion surface. Most accurate may be those based upon measurement of the condition for zero gap, revaled by zero contrast of a Kikuchi or Kossel line. By measurement in non-systematic cases, measured either as a critical voltage or as a diffraction condition, the scop作者: 一致性 時間: 2025-3-31 20:57 作者: lavish 時間: 2025-4-1 01:41
Anwendung von Modell VI als Dezisionsmodellassumed to have reached a steady-state equilibrium at a particular temperature such that the rate of capture at a sink exactly balances the rate of evaporation from the sink by thermal excitation. Subsequent rapid cooling to room temperature does not significantly alter the segregation profile. A si作者: 拾落穗 時間: 2025-4-1 03:22
https://doi.org/10.1007/978-3-642-47975-5a local scale, on bulk inhomogeneities and on electrically active extended defects in semiconductors.. The EBIC current arises from the collection of minority carriers created by the incident electron beam which are drifted by the electric field of a Schottky diode or of a p-n junction; they have be作者: 連鎖 時間: 2025-4-1 09:09 作者: Ingratiate 時間: 2025-4-1 10:30
https://doi.org/10.1007/978-3-662-61434-1e the only single crystal metal-semiconductor interfaces that are available. They are ideal material systems for the study of Schottky barrier height (SBH). Technologically, epitaxial metal-semiconductor structures may be an important part of the next generation vertical integration of microelectron作者: AVERT 時間: 2025-4-1 16:37 作者: chisel 時間: 2025-4-1 19:17 作者: 分發(fā) 時間: 2025-4-2 01:55 作者: 確定 時間: 2025-4-2 06:19 作者: IRK 時間: 2025-4-2 08:28
,übersicht über bekannte Me?verfahren,mplitudes as small as 10. can produce detectable contrasts under optimum imaging conditions [1], much more than would be predicted on the basis of the perturbed projected potential alone. Strong dynamical scattering effects, stimulated by the bending of diffracting lattice planes, are primarily resp
