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標題: Titlebook: Energy Level Alignment and Electron Transport Through Metal/Organic Contacts; From Interfaces to M Enrique Abad Book 2013 Springer-Verlag B [打印本頁]

作者: 能干    時間: 2025-3-21 19:41
書目名稱Energy Level Alignment and Electron Transport Through Metal/Organic Contacts影響因子(影響力)




書目名稱Energy Level Alignment and Electron Transport Through Metal/Organic Contacts影響因子(影響力)學科排名




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書目名稱Energy Level Alignment and Electron Transport Through Metal/Organic Contacts網(wǎng)絡(luò)公開度學科排名




書目名稱Energy Level Alignment and Electron Transport Through Metal/Organic Contacts被引頻次




書目名稱Energy Level Alignment and Electron Transport Through Metal/Organic Contacts被引頻次學科排名




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書目名稱Energy Level Alignment and Electron Transport Through Metal/Organic Contacts年度引用學科排名




書目名稱Energy Level Alignment and Electron Transport Through Metal/Organic Contacts讀者反饋




書目名稱Energy Level Alignment and Electron Transport Through Metal/Organic Contacts讀者反饋學科排名





作者: figurine    時間: 2025-3-21 21:08
978-3-642-42868-5Springer-Verlag Berlin Heidelberg 2013
作者: extract    時間: 2025-3-22 01:24

作者: Peak-Bone-Mass    時間: 2025-3-22 07:39

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作者: deface    時間: 2025-3-22 14:36
Waves in Strained/Polarized Media, the speed and power of electronic devices has increased exponentially, while its size has decreased in the same proportion. The initially slightly idealistic Moore’s law, which states that the number of transistors that can be placed inexpensively on an integrated circuit is doubled approximately e
作者: deface    時間: 2025-3-22 20:24

作者: aggravate    時間: 2025-3-23 00:28
Low-molecular weight organogelators,m: metal/semiconductor interfaces. Its technological importance led to an extensive research and nowadays, the properties of interfaces between metal and inorganic semiconductors are well understood (band bending, interface states, Bardeen model, IDIS model...). A small review of inorganic interface
作者: acheon    時間: 2025-3-23 04:31

作者: 改進    時間: 2025-3-23 08:10

作者: Herbivorous    時間: 2025-3-23 10:42

作者: extrovert    時間: 2025-3-23 16:32
Low-molecular weight organogelators,m: metal/semiconductor interfaces. Its technological importance led to an extensive research and nowadays, the properties of interfaces between metal and inorganic semiconductors are well understood (band bending, interface states, Bardeen model, IDIS model...). A small review of inorganic interfaces will be given in Sect. 3.2
作者: climax    時間: 2025-3-23 18:28

作者: laxative    時間: 2025-3-24 01:53

作者: 慢慢流出    時間: 2025-3-24 04:15
General Introduction,ealistic Moore’s law, which states that the number of transistors that can be placed inexpensively on an integrated circuit is doubled approximately every two years, remains true 45?years later (see Fig.?1.1).
作者: 舔食    時間: 2025-3-24 07:24
The IDIS Model at the Molecular Limit,ce, but are not an infinite metal-organic interface. This is the case of molecular electronics devices (where an organic molecule is attached to two metallic electrodes) , or individual molecules deposited over surfaces at extremely low coverage . It should be desirable to extend our model to those kind of systems.
作者: kidney    時間: 2025-3-24 14:35

作者: 輕信    時間: 2025-3-24 18:43

作者: Bravado    時間: 2025-3-24 20:23
2190-5053 Nominated as an outstanding contribution by the Autonomous U.In recent years, ever more electronic devices have started to exploit the advantages of organic semiconductors. The work reported in this thesis focuses on analyzing theoretically the energy level alignment of different metal/organic inter
作者: prosthesis    時間: 2025-3-25 00:07
Waves in Strained/Polarized Media,ealistic Moore’s law, which states that the number of transistors that can be placed inexpensively on an integrated circuit is doubled approximately every two years, remains true 45?years later (see Fig.?1.1).
作者: Feedback    時間: 2025-3-25 07:01

作者: ellagic-acid    時間: 2025-3-25 09:37

作者: harmony    時間: 2025-3-25 13:48

作者: 沖突    時間: 2025-3-25 17:01

作者: Malaise    時間: 2025-3-25 21:33

作者: 星球的光亮度    時間: 2025-3-26 01:16
Theoretical Foundation,imations have been done in order to get the best accuracy/resources ratio. This chapter will guide through the state-of-the-art ab initio techniques necessary (some of them developed during this work) to successfully simulate the systems that have been studied during this thesis.
作者: 支柱    時間: 2025-3-26 08:21
2190-5053 faces are analyzed, both for single molecules and for a monolayer. The results validate the induced density of interface states model..978-3-642-42868-5978-3-642-30907-6Series ISSN 2190-5053 Series E-ISSN 2190-5061
作者: Hiatal-Hernia    時間: 2025-3-26 09:05

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作者: Indurate    時間: 2025-3-26 20:29

作者: 編輯才信任    時間: 2025-3-26 22:30
Further Developments in IDIS Model,m: metal/semiconductor interfaces. Its technological importance led to an extensive research and nowadays, the properties of interfaces between metal and inorganic semiconductors are well understood (band bending, interface states, Bardeen model, IDIS model...). A small review of inorganic interface
作者: 物質(zhì)    時間: 2025-3-27 02:21

作者: NATTY    時間: 2025-3-27 08:19
Results for Various Interfaces: C (_{60}) , Benzene, TTF, TCNQ and Pentacene over Au(111),S model we can correct the underestimation of the LDA gap and get a realistic value for an organic molecule over a metal surface, where both the SIC and the image potential contribute to the size of the gap. We have also employed all these ideas for two systems of technological and scientific intere
作者: 指派    時間: 2025-3-27 11:45
General Conclusions and Future Work,anic electronic devices); and molecules between metal electrodes (like the ones present molecular electronic devices) have been analyzed using DFT (and introducing the appropriate corrections). For these systems it is very important to have correctly characterized the electron and hole injection bar
作者: 討厭    時間: 2025-3-27 16:29
Gianluca Lo Coco,Salvatore Gullo,Claudia Prestano,Gary M. Burlingamero-ofs are referred to in the literature. Thus, the manuscriptshould prove useful not only to mathematicians and theoreti-cal scientists with expertise in parti978-3-540-54339-8978-3-540-47564-4Series ISSN 0170-8643 Series E-ISSN 1610-7411
作者: 祖先    時間: 2025-3-27 20:48

作者: laxative    時間: 2025-3-27 23:43

作者: Legend    時間: 2025-3-28 05:21
Mustafa M. AralProvides a comprehensive source for advancements/contributions made in environmental transformation, transport modeling and the associated health risk assessment topics Includes free downloadable appl




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