標(biāo)題: Titlebook: Emerging Technologies and Circuits; Amara Amara,Thomas Ea,Marc Belleville Book 2010 Springer Science+Business Media B.V. 2010 CMOS.FinFET. [打印本頁] 作者: 鏟除 時(shí)間: 2025-3-21 18:22
書目名稱Emerging Technologies and Circuits影響因子(影響力)
書目名稱Emerging Technologies and Circuits影響因子(影響力)學(xué)科排名
書目名稱Emerging Technologies and Circuits網(wǎng)絡(luò)公開度
書目名稱Emerging Technologies and Circuits網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Emerging Technologies and Circuits被引頻次
書目名稱Emerging Technologies and Circuits被引頻次學(xué)科排名
書目名稱Emerging Technologies and Circuits年度引用
書目名稱Emerging Technologies and Circuits年度引用學(xué)科排名
書目名稱Emerging Technologies and Circuits讀者反饋
書目名稱Emerging Technologies and Circuits讀者反饋學(xué)科排名
作者: Infect 時(shí)間: 2025-3-21 21:49 作者: syring 時(shí)間: 2025-3-22 01:54 作者: HEDGE 時(shí)間: 2025-3-22 05:29 作者: 誰在削木頭 時(shí)間: 2025-3-22 11:44
978-94-007-3353-4Springer Science+Business Media B.V. 2010作者: hypotension 時(shí)間: 2025-3-22 14:03 作者: hypotension 時(shí)間: 2025-3-22 17:44
Botulinum Toxin Injections for SpasticityAt the 32 nm technology node, the change from a P+ polysilicon / SiON gate stack to a P+ A-silicon/metal gate/high-K dielectric will have a significant impact on RF passives, especially the MOSCAPs and gate resistors.作者: Deceit 時(shí)間: 2025-3-22 23:24
https://doi.org/10.1007/978-94-017-9576-0As the technologies scale down into the nanometer range, the transistor leakage currents become a major concern. To overcome this problem, advanced control methods are mandatory, especially for circuits such as memories.作者: 小臼 時(shí)間: 2025-3-23 05:18 作者: 晚間 時(shí)間: 2025-3-23 06:27 作者: A簡潔的 時(shí)間: 2025-3-23 09:53
https://doi.org/10.1007/978-90-481-9379-0CMOS; FinFET; Leistungsfeldeffekttransistor; SRAM;; advanced devices; analog and mixed signal; circuit des作者: Temporal-Lobe 時(shí)間: 2025-3-23 14:52
Neurosonography of the Pre-Term Neonateed as early as in 1965 in his visionary paper [1] A virtuous innovation circle which fuelled the exponentional growth in revenue of this industry The decoupling of process and design flows with clear interfaces and sign-offs作者: inspired 時(shí)間: 2025-3-23 21:52
Leanne A. Calviello,Marek Czosnykafeature size scaling. There are many different candidates to replace the CMOS FET, but according to ITRS [1], none of them appear at this time to offer functional properties that are universally superior to the extremely scaled FET.作者: 夾克怕包裹 時(shí)間: 2025-3-24 01:05 作者: FEAT 時(shí)間: 2025-3-24 05:21
Neurophysiological bases of spasticityadblock for the integration of these devices in high density 6T SRAM cells [1, 2]. The increasing variation of transistor parameters like V., I., I., etc., can result in a large variability in performance and power. The possibility of leaving the channels undoped and their excellent immunity against作者: SLAG 時(shí)間: 2025-3-24 06:49
Assessment of Spasticity in Adultsentary MOS (CMOS) fabrication technology. As silicon devices are scaled down to the nanometer regime, the device technology is facing to several difficulties. Standby power consumption in CMOS devices is now one of the most serious problem and becoming a limiting factor in MOSFET scaling [1]. Short 作者: overreach 時(shí)間: 2025-3-24 13:05
Brain Death and TCD Recordings,be decreased. Dielectric materials with higher dielectric constant (high-k) should replace conventional SiO.. Hafnium-based gate stacks have been proposed to be one of the most promising candidates, although reliability issues are being discussed [2–4]. On the other hand, as the critical dimension o作者: Inveterate 時(shí)間: 2025-3-24 15:48
Sport-Related Structural Brain Injury,egions, since the damaged layer thickness will be in conflict with the device design margin such as junction depth [1]. This Si substrate damage is realized as “Si recess” [2] as shown in Fig. 1. Although Si recess is considered to induce dopant loss and performance degradation in MOSFETs, few atten作者: –LOUS 時(shí)間: 2025-3-24 22:30
https://doi.org/10.1007/978-1-4612-1938-5e outline the technology as well as the mm-wave design challenges. Using recent work on Coplanar Waveguide (CPW) modeling, we describe how it’s possible to use parametric, 3D electromagnetic simulation to complete or replace analytical models of on-chip passive devices. A short description of the tr作者: FLIT 時(shí)間: 2025-3-25 02:17
Intermezzo: From Self to Others to Agents,e large current transients in the power delivery system, resulting in V. droop and overshoot fluctuations. The magnitude and duration of V. droops and overshoots depend on the interaction of capacitive and inductive parasitics at the board, package, and die levels with changes in current demand [1].作者: 商店街 時(shí)間: 2025-3-25 06:40 作者: 立即 時(shí)間: 2025-3-25 09:38 作者: Meditative 時(shí)間: 2025-3-25 12:28
Catecholamine-Derived Aldehyde Neurotoxinsessive scaling is reaching its limits and the control of semiconductor manufacturing process is becoming increasingly difficult. Variations in manufacturing process have grown, and variations in device parameters have grown even more, resulting in wider distributions which, in turn, could result in 作者: 確定方向 時(shí)間: 2025-3-25 19:49
Amara Amara,Thomas Ea,Marc BellevilleCovers different aspects of emerging technology and devices.Covers different aspects of advanced devices and circuits.Covers different aspects of reliability and SEU.Covers different aspects of power,作者: Painstaking 時(shí)間: 2025-3-25 23:24
Lecture Notes in Electrical Engineeringhttp://image.papertrans.cn/e/image/308393.jpg作者: 妨礙議事 時(shí)間: 2025-3-26 01:41 作者: gastritis 時(shí)間: 2025-3-26 06:56 作者: 煞費(fèi)苦心 時(shí)間: 2025-3-26 09:44 作者: 最高峰 時(shí)間: 2025-3-26 15:25
Neurophysiological bases of spasticityetc., can result in a large variability in performance and power. The possibility of leaving the channels undoped and their excellent immunity against Short Channel Effects (SCE) favors the use of FinFET-based multi-gate devices [3] for these technology nodes.作者: Hormones 時(shí)間: 2025-3-26 20:26 作者: heart-murmur 時(shí)間: 2025-3-26 22:08
Assessment of Spasticity in Adultsnsumption. Catastrophic increase in static power consumption due to shot channel effects (SCEs) becomes the serious problem in future VLSI circuits. Especially, the leakage current in the SRAM array is the most critical issue for a low-power SoC because it occupies the considerable part of LSIs.作者: LEER 時(shí)間: 2025-3-27 02:40
https://doi.org/10.1007/978-3-642-93404-9er (LP) CMOS designs, where the over-drive voltage is less than two times of the threshold voltage. As the voltage scales down, circuits become increasingly sensitive to the variability. As a result, circuit design for low-power process technologies with low supply voltages becomes extremely challenging.作者: 富饒 時(shí)間: 2025-3-27 07:45
Independent-Double-Gate FINFET SRAM Cell for Drastic Leakage Current Reductionnsumption. Catastrophic increase in static power consumption due to shot channel effects (SCEs) becomes the serious problem in future VLSI circuits. Especially, the leakage current in the SRAM array is the most critical issue for a low-power SoC because it occupies the considerable part of LSIs.作者: seruting 時(shí)間: 2025-3-27 12:39
Process Variability-Induced Timing Failures – A Challenge in Nanometer CMOS Low-Power Designer (LP) CMOS designs, where the over-drive voltage is less than two times of the threshold voltage. As the voltage scales down, circuits become increasingly sensitive to the variability. As a result, circuit design for low-power process technologies with low supply voltages becomes extremely challenging.作者: faction 時(shí)間: 2025-3-27 17:10
A Simple Compact Model to Analyze the Impact of Ballistic and Quasi-Ballistic Transport on Ring Oscired in the modeling of ultra-short Double-Gate devices with an accurate description. Since the conventional Drift-Diffusion model (usually considered as a standard simulation level for devices) fails at describing ballistic transport, new specific models have to be developed for this regime.作者: 描述 時(shí)間: 2025-3-27 18:40
Low-Voltage Scaled 6T FinFET SRAM Cellsetc., can result in a large variability in performance and power. The possibility of leaving the channels undoped and their excellent immunity against Short Channel Effects (SCE) favors the use of FinFET-based multi-gate devices [3] for these technology nodes.作者: corpus-callosum 時(shí)間: 2025-3-27 22:19 作者: 遷移 時(shí)間: 2025-3-28 06:07 作者: morale 時(shí)間: 2025-3-28 07:48
Analysis of SI Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposel the damage, the plasma-induced defects in Si surface layer should be quantitatively estimated, and then, plasma designs should be optimized. Defect generation probability was proposed from an optical analysis as a measure of the damage [7], on one hand. With regard to plasma design, on the other, 作者: DEVIL 時(shí)間: 2025-3-28 14:04
Resilient Circuits for Dynamic Variation Tolerancemance by increasing F. or lower power by lowering V. during favorable operating conditions. Since most systems usually operate at nominal conditions where worst-case scenarios rarely occur, these infrequent dynamic variations severely limit the performance and energy efficiency of conventional micro作者: 舊石器時(shí)代 時(shí)間: 2025-3-28 17:05
How Does Inverse Temperature Dependence Affect Timing Sign-Offmperature rises. Hence the device performance depends on the racing condition of electron mobility and V. together as temperature rises. Traditionally, timing is signed off at two extreme temperature corners, one representing the best case and the other representing the worst case. With ITD, the hig作者: coltish 時(shí)間: 2025-3-28 20:51
CMOS Logic Gates Leakage Modeling Under Statistical Process Variations, the reverse-biased drain and source substrate junction band to band tunneling (Ibtbt), and the gate induced drain leakage (Igidl). Each of those leakage currents becomes significant in nano-scaled devices tightening the constraints of nowadays digital designs [2].作者: Ascendancy 時(shí)間: 2025-3-29 00:07 作者: 不透氣 時(shí)間: 2025-3-29 04:44 作者: corpuscle 時(shí)間: 2025-3-29 09:25
Sport-Related Structural Brain Injury,l the damage, the plasma-induced defects in Si surface layer should be quantitatively estimated, and then, plasma designs should be optimized. Defect generation probability was proposed from an optical analysis as a measure of the damage [7], on one hand. With regard to plasma design, on the other, 作者: 連系 時(shí)間: 2025-3-29 14:40 作者: facilitate 時(shí)間: 2025-3-29 16:12
Pharmacology of the , Nervous Systemmperature rises. Hence the device performance depends on the racing condition of electron mobility and V. together as temperature rises. Traditionally, timing is signed off at two extreme temperature corners, one representing the best case and the other representing the worst case. With ITD, the hig作者: MUMP 時(shí)間: 2025-3-29 20:19 作者: EVICT 時(shí)間: 2025-3-30 00:48
1876-1100 ues and solutions, advanced memories and analog and mixed signals. All these papers are focusing on design and technology interactions and comply with the scope of the conference.978-94-007-3353-4978-90-481-9379-0Series ISSN 1876-1100 Series E-ISSN 1876-1119 作者: HALL 時(shí)間: 2025-3-30 05:19
Synergy Between Design and Technology: A Key Factor in the Evolving Microelectronic Landscapeed as early as in 1965 in his visionary paper [1] A virtuous innovation circle which fuelled the exponentional growth in revenue of this industry The decoupling of process and design flows with clear interfaces and sign-offs作者: 鋼筆記下懲罰 時(shí)間: 2025-3-30 11:44 作者: agglomerate 時(shí)間: 2025-3-30 15:29
A Simple Compact Model to Analyze the Impact of Ballistic and Quasi-Ballistic Transport on Ring Osciharacter between drift-diffusion and ballistic/quasi-ballistic transport [1]. Then, ballistic and quasi-ballistic transport regimes have to be considered in the modeling of ultra-short Double-Gate devices with an accurate description. Since the conventional Drift-Diffusion model (usually considered 作者: Lumbar-Stenosis 時(shí)間: 2025-3-30 17:29 作者: Hemoptysis 時(shí)間: 2025-3-30 20:50 作者: NICHE 時(shí)間: 2025-3-31 03:05 作者: arrogant 時(shí)間: 2025-3-31 07:50
Analysis of SI Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposeegions, since the damaged layer thickness will be in conflict with the device design margin such as junction depth [1]. This Si substrate damage is realized as “Si recess” [2] as shown in Fig. 1. Although Si recess is considered to induce dopant loss and performance degradation in MOSFETs, few atten作者: verdict 時(shí)間: 2025-3-31 12:34
CMOS SOI Technology for WPAN: Application to 60 GHZ LNAe outline the technology as well as the mm-wave design challenges. Using recent work on Coplanar Waveguide (CPW) modeling, we describe how it’s possible to use parametric, 3D electromagnetic simulation to complete or replace analytical models of on-chip passive devices. A short description of the tr
