作者: SIT 時間: 2025-3-21 22:41
Spin Transfer Torque Magnetoresistive Random Access Memory technologies have been proposed to cater to the performance gaps within the memory hierarchy system. The magnetoresistive random access memory (MRAM), an emerging and promising NVM technology, will be the key focus of this chapter. At the core of MRAM is the magnetic tunnel junction (MTJ), a storag作者: LURE 時間: 2025-3-22 01:22
Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applicationses. In 2008, IBM scientists have developed a new concept of memory, which is based on driving of magnetic domain walls (DWs) along a nanowire using an electric current. In this chapter, we first discuss the efficient current-induced nucleation of DWs. We then review the mechanism of various driving 作者: SEMI 時間: 2025-3-22 07:57 作者: moratorium 時間: 2025-3-22 10:58 作者: Outmoded 時間: 2025-3-22 13:52
Circuit Design for Non-volatile Magnetic Memorybecause of its performance and non-volatility. However, it has various design challenges such as small tunneling magnetoresistance (TMR) ratios and large variability that need to be tackled for reliable operation. This chapter will discuss those challenges and introduce state-of-the-art write and re作者: Outmoded 時間: 2025-3-22 18:57 作者: Banquet 時間: 2025-3-22 23:28
3D Nanomagnetic Logic it comes to massively parallel and pipelined digital operations with stringent power constraints, 3D Nanomagnetic Logic might pay off. This chapter gives an insight on an experimentally demonstrated complete set of logic devices, where the entities are not electrically connected but fully powered a作者: 搖晃 時間: 2025-3-23 02:25 作者: 散步 時間: 2025-3-23 08:57 作者: 正式演說 時間: 2025-3-23 10:12
RRAM Device Characterizations and Modellingbeen carried out to facilitate practical use of RRAM as data storage system. However, further improvements, such as reducing the operation voltage and current, suppressing the device variability, etc., are still needed for the commercialization of RRAM. To further optimize the device performance, ph作者: Gossamer 時間: 2025-3-23 16:43
RRAM-Based Neuromorphic Computing Systemsdata generated across the globe as well as various emerging hardware requirements to execute complex tasks, e.g., pattern recognition, speech classification, etc. Neuromorphic computing has emerged as one of the most extensively investigated among these approaches. RRAM devices with their desired ch作者: Arable 時間: 2025-3-23 18:05
An Automatic Sound Classification Framework with Non-volatile Memoryautomatic sound classification (ASC) systems has improved significantly in recent years. However, the high computational cost, hence high power consumption, remains a major hurdle for large-scale implementation of ASC systems on mobile and wearable devices. Motivated by the observations that humans 作者: Judicious 時間: 2025-3-24 01:02
Wen Siang Lew,Gerard Joseph Lim,Putu Andhita DananOffers a comprehensive guide to non-volatile magnetic memory devices.Written by prominent experts from both academia and industry.Highlights state-of-the-art applications of memory technologies作者: 壯觀的游行 時間: 2025-3-24 02:41
http://image.papertrans.cn/e/image/308325.jpg作者: SCORE 時間: 2025-3-24 08:18
https://doi.org/10.1007/978-3-030-46855-2rowave generator, and also as a microwave detector, by using the concept of spin-transfer torque. When the MTJ nanopillar is used as a microwave generator, the device is known as a spin-torque nano-oscillator (STNO) and offers advantages of high output power over metallic-based STNOs. We first discu作者: 不遵守 時間: 2025-3-24 11:19 作者: 多產(chǎn)魚 時間: 2025-3-24 17:38 作者: 易碎 時間: 2025-3-24 20:44
https://doi.org/10.1007/978-3-031-58791-7eration memory device. This approach has many technological appeals as it can enable ultra-low-latency data transfer and ultra-low power electronics. The underlying mechanisms governing magnetization switching from an applied electric-field are interfacial spin-charge coupling and Larmor precession.作者: 天然熱噴泉 時間: 2025-3-25 01:12 作者: Fibrillation 時間: 2025-3-25 05:16
,The Journey I Can’t Take Alone,because of its performance and non-volatility. However, it has various design challenges such as small tunneling magnetoresistance (TMR) ratios and large variability that need to be tackled for reliable operation. This chapter will discuss those challenges and introduce state-of-the-art write and re作者: Frequency 時間: 2025-3-25 08:37
https://doi.org/10.1057/9781137010889 of freedom of electron, can lead to devices that outstrip the performance of traditional semiconductor?technology. The spin moment in magnetic nanostructures by virtue of their inherent non-volatility can potentially?offer the opportunity of ultra-low power and high speed devices. This chapter desc作者: 圣人 時間: 2025-3-25 14:14
https://doi.org/10.1057/9781137482921 it comes to massively parallel and pipelined digital operations with stringent power constraints, 3D Nanomagnetic Logic might pay off. This chapter gives an insight on an experimentally demonstrated complete set of logic devices, where the entities are not electrically connected but fully powered a作者: optic-nerve 時間: 2025-3-25 19:05 作者: aptitude 時間: 2025-3-25 23:59
Explanations for Underachievementflash, SRAM and DRAM. In contrast to the electrical charge changes in flash memories to define memory states, RRAM devices rely on non-volatile, reversible resistance changes within the device, hence its name. Apart from its superior performance: low power, high speed, high endurance, its simple two作者: 圖表證明 時間: 2025-3-26 01:14
Sarah E. Tevis,Nizar N. Jarjourbeen carried out to facilitate practical use of RRAM as data storage system. However, further improvements, such as reducing the operation voltage and current, suppressing the device variability, etc., are still needed for the commercialization of RRAM. To further optimize the device performance, ph作者: 調(diào)整 時間: 2025-3-26 07:40
The Importance of Coding and Billing,data generated across the globe as well as various emerging hardware requirements to execute complex tasks, e.g., pattern recognition, speech classification, etc. Neuromorphic computing has emerged as one of the most extensively investigated among these approaches. RRAM devices with their desired ch作者: 使成整體 時間: 2025-3-26 11:30 作者: 制定 時間: 2025-3-26 15:40
https://doi.org/10.1007/978-981-15-6912-8Domain Wall Devices; Logic-in-Memory Architecture; Magnetic Memory and Logic; Nanospintronics; Nanostruc作者: 終端 時間: 2025-3-26 20:07
The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapor作者: 極小量 時間: 2025-3-26 23:54 作者: somnambulism 時間: 2025-3-27 04:21 作者: FEIGN 時間: 2025-3-27 08:22 作者: Dungeon 時間: 2025-3-27 13:03
Insights from NIC and GDP Co-development,ain wall motion. The exact physics behind the SOTs is still not well known, but it was well demonstrated that the SOTs show higher efficiency for domain wall (DW) motion. However, this SOT requires additionally a chiral symmetry breaking such as due to DMI in order to act on the DWs. The DMI generat作者: Observe 時間: 2025-3-27 16:37 作者: epidermis 時間: 2025-3-27 20:15
Explanations for UnderachievementThis chapter focuses on the redox-RRAM, where resistance changes take place through redox reactions within the insulator layer of the MIM, and will describe the basic operating principles of RRAM as well as various RRAM architectures.作者: artless 時間: 2025-3-27 23:56 作者: Anonymous 時間: 2025-3-28 02:36
The Importance of Coding and Billing,sadvantages are discussed. Different techniques that have been implemented to improve the device synaptic characteristics from material viewpoint and programming approach followed by several system level simulations demonstrating the projected performance of these devices are provided in detail. Dif作者: 江湖騙子 時間: 2025-3-28 07:39
Correction to: Microwave Oscillators and Detectors Based on Magnetic Tunnel Junctions,作者: dissolution 時間: 2025-3-28 12:34
mory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.978-981-15-6912-8作者: Allodynia 時間: 2025-3-28 16:55
Chiral Magnetic Domain Wall and Skyrmion Memory Devicesain wall motion. The exact physics behind the SOTs is still not well known, but it was well demonstrated that the SOTs show higher efficiency for domain wall (DW) motion. However, this SOT requires additionally a chiral symmetry breaking such as due to DMI in order to act on the DWs. The DMI generat作者: 遺產(chǎn) 時間: 2025-3-28 22:41 作者: 碎石頭 時間: 2025-3-28 23:21 作者: Pert敏捷 時間: 2025-3-29 04:34
RRAM Device Characterizations and Modelling transmission electron microscopy (TEM) and so on. After that, Monte Carlo simulation of the dynamic resistive switching processes is presented, allowing for correlating the observed switching characteristics with the microcosmic physical processes. Besides, compact model for spice simulation of RRA作者: 骨 時間: 2025-3-29 09:23 作者: buoyant 時間: 2025-3-29 15:24
state-of-the-art applications of memory technologiesThis book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based作者: 晚來的提名 時間: 2025-3-29 15:44 作者: 暫時休息 時間: 2025-3-29 20:54
https://doi.org/10.1007/978-3-030-46855-2communication applications is discussed, with the focus on the synchronization and modulation of the MTJ-STNOs with an external signal. Finally the application of these devices as microwave detectors is discussed, and we concentrate on approaches for enhancing their microwave sensitivity.作者: 馬賽克 時間: 2025-3-30 02:56
