標題: Titlebook: Emerging Memory Technologies; Design, Architecture Yuan Xie Book 2014 Springer Science+Business Media New York 2014 Emerging Memory.Memory [打印本頁] 作者: 恰當 時間: 2025-3-21 18:10
書目名稱Emerging Memory Technologies影響因子(影響力)
書目名稱Emerging Memory Technologies影響因子(影響力)學科排名
書目名稱Emerging Memory Technologies網(wǎng)絡公開度
書目名稱Emerging Memory Technologies網(wǎng)絡公開度學科排名
書目名稱Emerging Memory Technologies被引頻次
書目名稱Emerging Memory Technologies被引頻次學科排名
書目名稱Emerging Memory Technologies年度引用
書目名稱Emerging Memory Technologies年度引用學科排名
書目名稱Emerging Memory Technologies讀者反饋
書目名稱Emerging Memory Technologies讀者反饋學科排名
作者: CHANT 時間: 2025-3-21 20:31
,Hizbullah’s Reconstruction of History,ising NVM for energy efficient computing because of its fast write speed and low-power operations. This chapter provides an overview of the circuit design technologies and applications of resistive memory devices for energy efficient systems, including resistive RAM (ReRAM), nonvolatile logic, and nonvolatile SRAM.作者: Matrimony 時間: 2025-3-22 02:52 作者: Kaleidoscope 時間: 2025-3-22 07:23 作者: adjacent 時間: 2025-3-22 10:35 作者: 綁架 時間: 2025-3-22 14:50 作者: 綁架 時間: 2025-3-22 20:52 作者: misshapen 時間: 2025-3-22 21:43 作者: Medley 時間: 2025-3-23 03:48 作者: otic-capsule 時間: 2025-3-23 07:30
Introduction: the History of This Book,“0” into an STT-RAM cell is very asymmetric in terms of performance, power, and reliability. In this chapter, we will review this asymmetry and analyze its sources. The impacts of this asymmetry on the STT-RAM cell optimization will be also discussed, followed by the introduction on a model to simulate the STT-RAM cell asymmetry.作者: Neutral-Spine 時間: 2025-3-23 13:14
https://doi.org/10.1007/978-3-662-33887-2rarchies. We demonstrate that an ReRAM-based cache hierarchy on an 8-core CMP system can achieve a 28?% EDP (Energy-Delay Product) improvement and a 39?% EDAP (Energy-Delay-Area Product) improvement compared to a conventional hierarchy with SRAM on-chip caches and DRAM main memory.作者: 相同 時間: 2025-3-23 14:30 作者: EXUDE 時間: 2025-3-23 20:22
A Circuit-Architecture Co-optimization Framework for Exploring Nonvolatile Memory Hierarchies,rarchies. We demonstrate that an ReRAM-based cache hierarchy on an 8-core CMP system can achieve a 28?% EDP (Energy-Delay Product) improvement and a 39?% EDAP (Energy-Delay-Area Product) improvement compared to a conventional hierarchy with SRAM on-chip caches and DRAM main memory.作者: 皺痕 時間: 2025-3-24 00:36
Book 2014 practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.作者: Antarctic 時間: 2025-3-24 02:51
https://doi.org/10.1007/978-1-4419-9551-3Emerging Memory; Memory Architecture; Memory Circuit Design; Memory Design; NVM SIM; Non-volatile Memory; 作者: nocturia 時間: 2025-3-24 09:16
978-1-4939-4199-5Springer Science+Business Media New York 2014作者: STING 時間: 2025-3-24 13:28
Yuan XieProvides a comprehensive reference on designing modern circuits with emerging, non-volatile memory technologies, such as MRAM and PCRAM.Explores new design opportunities offered by emerging memory tec作者: HARP 時間: 2025-3-24 16:39
http://image.papertrans.cn/e/image/308308.jpg作者: 關心 時間: 2025-3-24 20:28 作者: Esophagitis 時間: 2025-3-25 01:24
https://doi.org/10.1057/9780230593107fer memory?(STT-RAM, or MRAM), phase change memory?(PCRAM), and resistive memory?(ReRAM) are regarded as the most promising candidates. As the ultimate goal of this NVM research is to deploy them into multiple levels in the memory hierarchy, it is necessary to explore the wide NVM design space and f作者: 等待 時間: 2025-3-25 06:24 作者: Neuralgia 時間: 2025-3-25 08:58
,Hizbullah’s Reconstruction of History,wever, memory is becoming a bottleneck for electronic systems attempting to achieve low energy consumption. The resistive memory (memristor) is a promising NVM for energy efficient computing because of its fast write speed and low-power operations. This chapter provides an overview of the circuit de作者: 艦旗 時間: 2025-3-25 12:11 作者: 甜瓜 時間: 2025-3-25 19:01 作者: 埋葬 時間: 2025-3-25 21:42 作者: 先驅 時間: 2025-3-26 00:23
https://doi.org/10.1057/9780230503854roprocessor performance growth. Data-intensive applications such as data mining, information retrieval, video processing, and image coding demand significant computational power and generate substantial memory traffic, which places a heavy strain on both off-chip bandwidth and overall system power. 作者: 有發(fā)明天才 時間: 2025-3-26 08:14 作者: 商議 時間: 2025-3-26 11:53 作者: 配置 時間: 2025-3-26 12:47 作者: GENUS 時間: 2025-3-26 18:51
Introduction,emonstrated great potentials to be the candidates for future computer memory architecture design. It is important for SoC designers and computer architects to understand the benefits and limitations of such emerging memory technologies, to improve the performance/power/reliability of future memory a作者: Lament 時間: 2025-3-26 22:09
NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Non-volatile Memory,fer memory?(STT-RAM, or MRAM), phase change memory?(PCRAM), and resistive memory?(ReRAM) are regarded as the most promising candidates. As the ultimate goal of this NVM research is to deploy them into multiple levels in the memory hierarchy, it is necessary to explore the wide NVM design space and f作者: Gerontology 時間: 2025-3-27 01:13
A Hybrid Solid-State Storage Architecture for the Performance, Energy Consumption, and Lifetime Impy, and falling cost. On the other hand, the performance of NAND flash memory is limited by its “erase-before-write” requirement. Log-based structures have been used to alleviate this problem by writing updated data to the clean space. Log-based methods, however, cannot completely overcome the inhere作者: 雪崩 時間: 2025-3-27 07:18 作者: 有罪 時間: 2025-3-27 11:16 作者: CANE 時間: 2025-3-27 16:25 作者: 手勢 時間: 2025-3-27 18:08 作者: 高度贊揚 時間: 2025-3-28 00:30 作者: 很像弓] 時間: 2025-3-28 04:37 作者: 淘氣 時間: 2025-3-28 07:26 作者: PLUMP 時間: 2025-3-28 14:01 作者: propose 時間: 2025-3-28 16:10 作者: maintenance 時間: 2025-3-28 19:59 作者: 狗舍 時間: 2025-3-28 23:03 作者: critic 時間: 2025-3-29 03:36 作者: Mortal 時間: 2025-3-29 11:03
Nationalkultur oder europ?ische Werte?icy for nonvolatile caches. . has two features: first, Swap-Shift (SwS), an enhancement based on previous main memory wear leveling to reduce cache inter-set write variations; second, probabilistic set line flush (PoLF), a novel technique to reduce cache intra-set write variations. Implementing . on作者: 藥物 時間: 2025-3-29 13:49
https://doi.org/10.1007/978-3-662-39719-0r, . sleep time and . wake-up time, consisting of a flip-flop controller (FFC), a distributed memory architecture and a voltage detection system. Compared with an existing industry processor, it can achieve over 30–. speedup on the wake-up/sleep time and . energy savings on the data backup and recal作者: Finasteride 時間: 2025-3-29 18:06
A Hybrid Solid-State Storage Architecture for the Performance, Energy Consumption, and Lifetime Imp1) the PCRAM log region allows in-place updating and byte-granularity access so that it significantly improves the usage efficiency of log pages by eliminating out-of-date log records; (2) it greatly reduces the traffic of reading from the NAND flash memory storage since the size of logs loaded for 作者: rheumatism 時間: 2025-3-29 23:34 作者: 補角 時間: 2025-3-30 03:15
STT-RAM Cache Hierarchy Design and Exploration with Emerging Magnetic Devices,imes and write performances, made possible by novel magnetic tunneling junction (MTJ) designs. For L1 caches where speed is of the utmost importance, we propose a scheme that uses fast STT-RAM cells with reduced data retention time coupled with a dynamic refresh scheme. We will show that such a cach作者: Munificent 時間: 2025-3-30 04:20 作者: exercise 時間: 2025-3-30 11:26
