標(biāo)題: Titlebook: Electronic Structure of Semiconductor Heterojunctions; Giorgio Margaritondo Book 1988 Editoriale Jaca Book spa, Milano 1988 electron.elect [打印本頁] 作者: 海市蜃樓 時(shí)間: 2025-3-21 17:10
書目名稱Electronic Structure of Semiconductor Heterojunctions影響因子(影響力)
書目名稱Electronic Structure of Semiconductor Heterojunctions影響因子(影響力)學(xué)科排名
書目名稱Electronic Structure of Semiconductor Heterojunctions網(wǎng)絡(luò)公開度
書目名稱Electronic Structure of Semiconductor Heterojunctions網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Electronic Structure of Semiconductor Heterojunctions被引頻次
書目名稱Electronic Structure of Semiconductor Heterojunctions被引頻次學(xué)科排名
書目名稱Electronic Structure of Semiconductor Heterojunctions年度引用
書目名稱Electronic Structure of Semiconductor Heterojunctions年度引用學(xué)科排名
書目名稱Electronic Structure of Semiconductor Heterojunctions讀者反饋
書目名稱Electronic Structure of Semiconductor Heterojunctions讀者反饋學(xué)科排名
作者: 兇殘 時(shí)間: 2025-3-21 21:12 作者: 商店街 時(shí)間: 2025-3-22 03:51 作者: 強(qiáng)壯 時(shí)間: 2025-3-22 07:13 作者: 桶去微染 時(shí)間: 2025-3-22 09:37 作者: 團(tuán)結(jié) 時(shí)間: 2025-3-22 13:18 作者: 團(tuán)結(jié) 時(shí)間: 2025-3-22 19:48 作者: entreat 時(shí)間: 2025-3-22 22:56
Schottky barriers: An effective work function modelgold is found to correlate well with the anion work function, suggesting the interface phases are often anion rich. This correlation holds even for cases in which the “common anion rule” fails, and explains both successes and failures of this earlier model.作者: debase 時(shí)間: 2025-3-23 02:36
Parabolic quantum wells with the GaAs-Al,Ga,As system = 0.15Δ.. generally assumed for square wells. Experiment and theory show that parabolic wells can lead to parity-allowed Δ. = 2 (“forbidden”) transitions with strengths greater than Of nearby Δ. = 0(“allowed”) transitions.作者: travail 時(shí)間: 2025-3-23 08:16
Growth of Microstructures by Molecular Beam Epitaxyric fields may be applied, new structures with enhanced carrier mobilities, structures for tunneling injection of carriers, and possible structures for achievement of quantum wires and dots. New crystal systems and new growth techniques are extending the range of accessible microstructures.作者: 友好關(guān)系 時(shí)間: 2025-3-23 12:55
Compositionally Graded Semiconductors and their Device Applicationshas far reaching consequences for devices made of these materials, is that electrons and holes experience different electric forces so the transport properties of the two types of carriers can be independently tuned.作者: 漂泊 時(shí)間: 2025-3-23 16:19
Direct observation of effective mass filtering in InGaAs/lnP superlatticesgle quantum well samples in the form of .. -. junctions and involved low-temperature photoinduced capacitance and ac conductivity measurements, which easily resolved the 205 ? superlattice period, and deep level transient spectroscopy observations of hole trapping in 60-80 ? quantum wells.作者: Obliterate 時(shí)間: 2025-3-23 18:14
Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAse of interface dipoles and variations of band-gap discontinuities. The orientation variation of the band-gap discontinuities is found to be a significant fraction (≈.) of the total band-gap discontinuity.作者: 上腭 時(shí)間: 2025-3-24 02:05
Internal Photoemission in GaAs/(AlxGa1?x)As Heterostructures internal photoemission from the conduction band in GaAs over the barrier into the conduction band of (Al.Ga.)As and in the near red region where excitations from the GaAs valence band into the (Al.Ga.)As conduction band are involved. From the measured energies we determine ΔE./ΔE. = 0.8 ± 0.03 for x = 0.2.作者: Mirage 時(shí)間: 2025-3-24 05:58 作者: 四指套 時(shí)間: 2025-3-24 06:48 作者: hypertension 時(shí)間: 2025-3-24 13:04 作者: Coronation 時(shí)間: 2025-3-24 16:32 作者: Gnrh670 時(shí)間: 2025-3-24 21:14 作者: 整體 時(shí)間: 2025-3-25 02:55
Heterostructure Devices: A Device Physicist Looks at Interfacesdent offset variations, act as major limitations in device design. Suitable measurements on device-type structures can provide accurate values for interface physics parameters, but the most widely used measurements are of limited reliability, with pure . measurement being of least use. Many of the p作者: Cerebrovascular 時(shí)間: 2025-3-25 03:31
Ge—GaAs(110) interface formation We show that these behaviors are consistent with the kinetic and thermodynamic properties of the atomic species. The valence band discontinuity is negligible over atomic dimensions, while for an abrupt interface (.. = 350°C) we measure Δ.. = 0.7±. eV. The photoemission changes character rapidly wit作者: CORE 時(shí)間: 2025-3-25 11:28 作者: impaction 時(shí)間: 2025-3-25 11:38
https://doi.org/10.1007/978-3-658-30127-9on effects, hopping conduction, and effective mass filtering are discussed. In the following section, experimental results on tunneling superlattice photoconductors based on effective mass filtering are presented. In the fifth section, negative differential resistance resulting from localization in 作者: inconceivable 時(shí)間: 2025-3-25 19:09 作者: 奇怪 時(shí)間: 2025-3-25 21:13 作者: avarice 時(shí)間: 2025-3-26 02:02
https://doi.org/10.1007/978-3-663-07881-4 to those inferred for Schottky barriers, then the pinning interface states should set up a dipole sufficient to alter the band offsets; the interfacial band alignment should then be dominated by the alignment of the pinning states, rather than that of the bulk bands. The experimentally suggested la作者: 強(qiáng)壯 時(shí)間: 2025-3-26 05:27
Electronic Structure of Semiconductor Heterojunctions作者: Functional 時(shí)間: 2025-3-26 12:14
Introductionin energy with respect to each other, when the materials are joined together to form a heterojunction?”. This deceivingly simple question has profound fundamental and technological implications. For over twenty-five years, a definite answer has been sought by experimentalists and theorists. We have 作者: diathermy 時(shí)間: 2025-3-26 14:48 作者: 著名 時(shí)間: 2025-3-26 16:55 作者: OATH 時(shí)間: 2025-3-26 23:32 作者: Hormones 時(shí)間: 2025-3-27 05:08 作者: 蔑視 時(shí)間: 2025-3-27 07:43
Heterostructure Devices: A Device Physicist Looks at Interfacesto the macroscopic electrostatic forces already present in homostructure devices. Incorporation of hetero-interfaces therefore offers a powerful device design parameter to control the distribution and flow of mobile carriers, greatly improving existing kinds of devices and making new kinds of device作者: 男學(xué)院 時(shí)間: 2025-3-27 11:41 作者: PON 時(shí)間: 2025-3-27 14:30 作者: 黑豹 時(shí)間: 2025-3-27 17:50 作者: sultry 時(shí)間: 2025-3-28 00:00
Internal Photoemission in GaAs/(AlxGa1?x)As Heterostructuresphoton energies exceeding the fundamental energy gaps of GaAs and (Al.Ga.)As. Additional onsets occur at photon energies in the infrared region due to internal photoemission from the conduction band in GaAs over the barrier into the conduction band of (Al.Ga.)As and in the near red region where exci作者: GRUEL 時(shí)間: 2025-3-28 05:31
Quantum States of Confined Carriers in Very Thin AlxGa1-x As-GaAs-AlxGa1-xAs Heterostructuresunced structure in the GaAs optical absorption spectrum. Up to eight resolved exciton transitions, associated with different bound-electron and bound-hole states, have been observed. The heterostructure behaves as a simple rectangular potential well with a depth of ≈0.88Δ.., for confining electrons 作者: 笨重 時(shí)間: 2025-3-28 08:15 作者: Invertebrate 時(shí)間: 2025-3-28 10:40
Defective Heterojunction Modelsd misfit-dislocation pinned heterojunction of GaAs. Theories of such behavior are numerous and disparate. Theories of ideal heterojunction band offsets are less diverse, but have still not converged to a single mechanism. Recent studies of heterojunctions suggest that the conduction-band offsets are作者: 西瓜 時(shí)間: 2025-3-28 16:31
Heterojunctions: Definite breakdown of the electron affinity rulel to predict semiconductor-semiconductor band lineups. The results show, beyond any experimental uncertainty, that the rule is incorrect. The elimination of the rule and of all models related to it considerably simplifies the theoretical situation of this fundamental area of solid-state physics.作者: 要求比…更好 時(shí)間: 2025-3-28 21:23
Parabolic quantum wells with the GaAs-Al,Ga,As systemreflect harmonic oscillator-like electron and hole levels. The many observed heavy-hole transitions can be fitted accurately with a model that divides the energy-gap discontinuity Δ.. equally between the conduction and valence-band wells. This is in marked contrast to the usual Δ.. = 0.85Δ.. and Δ..作者: 討人喜歡 時(shí)間: 2025-3-28 23:53
978-90-277-2823-4Editoriale Jaca Book spa, Milano 1988作者: WAX 時(shí)間: 2025-3-29 04:12 作者: 平息 時(shí)間: 2025-3-29 09:12
0923-1749 Overview: 978-90-277-2823-4978-94-009-3073-5Series ISSN 0923-1749 作者: ANA 時(shí)間: 2025-3-29 14:56
Perspectives in Condensed Matter Physicshttp://image.papertrans.cn/e/image/306426.jpg作者: essential-fats 時(shí)間: 2025-3-29 19:34
,Gesundheit und Innovation – Grundlagen,Following the past seventeen-year developmental path in the research of semiconductor superlattices and quantum wells, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.作者: 策略 時(shí)間: 2025-3-29 20:33 作者: 充滿人 時(shí)間: 2025-3-30 01:39
A Bird’s-Eye View on the Evolution of Semiconductor Superlattices and Quantum WellsFollowing the past seventeen-year developmental path in the research of semiconductor superlattices and quantum wells, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.作者: 畢業(yè)典禮 時(shí)間: 2025-3-30 07:54
Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunctionThe conduction- and valence-band discontinuities for the (110) GaAs-Ge heterojunction have been measured as Δ.. = 0.50 eV and Δ.. = 0.25 e. by the angle-resolved ultraviolet photoemission (ARUPS) technique. These values are in good agreement with the theoretical predictions of Pickett ..作者: Blatant 時(shí)間: 2025-3-30 11:49 作者: 含糊 時(shí)間: 2025-3-30 12:33 作者: agitate 時(shí)間: 2025-3-30 20:28
Experiments on Ge-GaAs Heterojunctionscharacteristics are consistent with a model in which the conduction- and valence-band edges at the interface are discontinuous. The forbidden band in heavily doped (.-type) germanium appears to shift to lower energy values.作者: 狼群 時(shí)間: 2025-3-30 23:13
Heterojunctions: Definite breakdown of the electron affinity rulel to predict semiconductor-semiconductor band lineups. The results show, beyond any experimental uncertainty, that the rule is incorrect. The elimination of the rule and of all models related to it considerably simplifies the theoretical situation of this fundamental area of solid-state physics.作者: 鑒賞家 時(shí)間: 2025-3-31 03:28 作者: STENT 時(shí)間: 2025-3-31 09:00 作者: 輕打 時(shí)間: 2025-3-31 10:06 作者: languid 時(shí)間: 2025-3-31 13:27
Mathias Diebig,Kai N. Klasmeierergy band diagram of a device and thus modifying its electrical transport properties (band gap engineering) (1). The most interesting property, which has far reaching consequences for devices made of these materials, is that electrons and holes experience different electric forces so the transport p作者: 長處 時(shí)間: 2025-3-31 17:57
https://doi.org/10.1007/978-3-658-30127-9field in the Introduction, in the second section resonant tunneling through double barriers is investigated. Recent conflicting interpretations of this effect in terms of a Fabry-Perot mechanism or sequential tunneling are reconciled via an analysis of scattering. It is shown that the ratio of the i
