標(biāo)題: Titlebook: Electronic Structure of Metal-Semiconductor Contacts; Winfried M?nch Book 1990 Editorial Jaca Book spa, Milano 1990 AES.Experiment.Halblei [打印本頁] 作者: HEIR 時(shí)間: 2025-3-21 16:33
書目名稱Electronic Structure of Metal-Semiconductor Contacts影響因子(影響力)
書目名稱Electronic Structure of Metal-Semiconductor Contacts影響因子(影響力)學(xué)科排名
書目名稱Electronic Structure of Metal-Semiconductor Contacts網(wǎng)絡(luò)公開度
書目名稱Electronic Structure of Metal-Semiconductor Contacts網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Electronic Structure of Metal-Semiconductor Contacts被引頻次
書目名稱Electronic Structure of Metal-Semiconductor Contacts被引頻次學(xué)科排名
書目名稱Electronic Structure of Metal-Semiconductor Contacts年度引用
書目名稱Electronic Structure of Metal-Semiconductor Contacts年度引用學(xué)科排名
書目名稱Electronic Structure of Metal-Semiconductor Contacts讀者反饋
書目名稱Electronic Structure of Metal-Semiconductor Contacts讀者反饋學(xué)科排名
作者: aviator 時(shí)間: 2025-3-21 23:11 作者: 彎曲的人 時(shí)間: 2025-3-22 04:22
Innovations in Communication Theories of the semiconductor depends on both the work function and the Fermi energy of the metal. Some arguments are put forward to the effect that a similar behaviour is expected for crystallographic orientations of the Si surface other than the (110). The calculations are actually in fair agreement with experimental data on (111) surfaces.作者: 專心 時(shí)間: 2025-3-22 08:18 作者: 自作多情 時(shí)間: 2025-3-22 12:19 作者: Kidney-Failure 時(shí)間: 2025-3-22 14:16
Innovations in Chemical Biology in many electronic properties associated with the quantum mechanical valence state. This transition divides crystalline solids into two well-defined classes: “covalent” and “ionic.” Within each class there is a unifying character to the observed properties.作者: Kidney-Failure 時(shí)間: 2025-3-22 21:01 作者: 要求比…更好 時(shí)間: 2025-3-22 21:28
Zum Mechanismus der Richtwirkung in Kupferoxydulgleichrichtern, Spannung, die Elektronen bis zu einem gewissen Grade vom .nach dem ...überquellen und dort eine r?umlich verteilte Ladung bilden. Je nachdem das Konzentrationsgef?lle der Elektronen in Richtung oder gegen die Richtung des Feldes wirkt, sollen gro?e oder kleine Str?me flie?en.作者: 北極人 時(shí)間: 2025-3-23 05:17 作者: 積極詞匯 時(shí)間: 2025-3-23 09:06 作者: RLS898 時(shí)間: 2025-3-23 12:22
Book 1990e not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor- insulator interfaces, heterojunctions between distinct semiconductors, and metal- semiconductor contacts. The latter ones s作者: Seminar 時(shí)間: 2025-3-23 13:57 作者: 暴行 時(shí)間: 2025-3-23 21:03 作者: Filibuster 時(shí)間: 2025-3-24 02:05
V. I. Lakshmanan,R. Roy,B. Gorainuszusprechen im Stande w?re. Ich betrachte daher selbstverst?ndlich die folgende Publication als eine einfache Wiedergabe von Beobachtungen, welche wahrscheinlich noch unter sehr complicirten Bedingungen gewonnen sind, indem ich die genauere experimentelle Analyse mir vorbehalte.作者: 心胸開闊 時(shí)間: 2025-3-24 04:17
Biotechnology: An Editorial Overviewequences pointed out. A semiquantitative discussion is given of various recent data, including the effect of an oxide layer on barrier height, the variation of barrier height with the metal, the work function of a free surface at high doping, and the effect of a cesium layer on the work function.作者: Console 時(shí)間: 2025-3-24 07:33 作者: 直覺好 時(shí)間: 2025-3-24 12:27
Theory of Surface States,equences pointed out. A semiquantitative discussion is given of various recent data, including the effect of an oxide layer on barrier height, the variation of barrier height with the metal, the work function of a free surface at high doping, and the effect of a cesium layer on the work function.作者: Pcos971 時(shí)間: 2025-3-24 17:05
Note on The Contact Between a Metal and an Insular or Semi-Conductor,ction level from lower levels. According to the theory of semi-conductors given by Wilson, there exist in these substances lattice imperfections at which an electron can exist in a bound stationary state below the conduction band, electrons being raised from these levels into the conduction band by the thermal agitation of the surrounding atoms.作者: accordance 時(shí)間: 2025-3-24 21:14 作者: 通知 時(shí)間: 2025-3-25 02:02 作者: BINGE 時(shí)間: 2025-3-25 05:29
Michael A. Redmond,Timothy Highleys in the semiconductor band gap are determined. The phenomenological index of interface behavior S (studied by Kurtin, McGill, and Mead for semiconductors of different ionicity) is discussed in terms of a simple model involving metal-induced states in the semiconductor gap.作者: dendrites 時(shí)間: 2025-3-25 11:02
Quahir Sohail,Hafsa Naheed,Reza Mohammadigold is found to correlate well with the anion work function, suggesting the interface phases are often anion rich. This correlation holds even for cases in which the “common anion rule” fails, and explains both successes and failures of this earlier model.作者: Parabola 時(shí)間: 2025-3-25 14:49 作者: 極小 時(shí)間: 2025-3-25 18:53 作者: paltry 時(shí)間: 2025-3-25 20:47
The formation of the Schottky barrier at the V/Si interfacea),.decreasing to a value (～0.64 eV) characteristic of the bulk VSi.contact which is formed at 500–550 °C; this change in the behavior of ..is directly correlated with the onset of atomic mixing across the interface.作者: 切割 時(shí)間: 2025-3-26 01:31
Surface States and Barrier Height of Metal-Semiconductor Systems,作者: 極小量 時(shí)間: 2025-3-26 08:10 作者: interpose 時(shí)間: 2025-3-26 10:07 作者: 無意 時(shí)間: 2025-3-26 16:28
0923-1749 ed, could not be given at that time. A prerequisite was Wilson‘s quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-978-94-010-6780-5978-94-009-0657-0Series ISSN 0923-1749 作者: Nebulizer 時(shí)間: 2025-3-26 17:58
Innovations for Metropolitan Areascharge as is independent of the metal. Rectification characteristics are then independent of the metal. These ideas are used to explain results of Meyerhof and others on the relation between contact potential differences and rectification.作者: arthrodesis 時(shí)間: 2025-3-27 00:58 作者: 憤怒事實(shí) 時(shí)間: 2025-3-27 02:45 作者: 上流社會(huì) 時(shí)間: 2025-3-27 09:12 作者: CLIFF 時(shí)間: 2025-3-27 10:35 作者: capsule 時(shí)間: 2025-3-27 13:57 作者: Flu表流動(dòng) 時(shí)間: 2025-3-27 18:10
Halbleitertheorie der Sperrschicht,chte?nderungen der Leitungselektronen in einer Randzone an der Grenze MetallHalbleiter zurückgeführt wurde. Diese Theorie konnte in der Zwischenzeit weiter entwickelt werden unter folgcnden Grundvoraussetzungen:作者: FID 時(shí)間: 2025-3-27 23:38 作者: 智力高 時(shí)間: 2025-3-28 02:13
Abweichungen vom Ohmschen Gesetz in Halbleitern,lchendichte und Teilchengeschwindigkeit gegeben. Das Ohmsche Gesetz ist erfüllt, wenn an der untersuchten Stelle die Teilchendichte von der Gr?βe und Richtung des Stromes unabh?ngig und ihre Geschwindigkeit der Feldst?rke proportional ist.作者: dominant 時(shí)間: 2025-3-28 09:27 作者: 行乞 時(shí)間: 2025-3-28 11:57 作者: 以煙熏消毒 時(shí)間: 2025-3-28 15:44
Fundamental Transition in The Electronic Nature of Solids, which is developed between constituent atoms. For example, the familiar Group-IV semiconductors are totally covalent and exhibit characteristics which are qualitatively different from highly ionic materials, such as the alkali halides. However, many materials of fundamental and practical importance作者: 灌溉 時(shí)間: 2025-3-28 19:57 作者: 小鹿 時(shí)間: 2025-3-29 02:50 作者: Encapsulate 時(shí)間: 2025-3-29 07:01
Electronic structure of a metal-semiconductor interface,Local densities of states and charge densities are used to study states near the interface. At the Si surface, a high density of extra states is found in the energy range of the Si fundamental gap. These states are bulklike in jellium and decay into Si with a high concentration of charge in the dang作者: 可行 時(shí)間: 2025-3-29 08:16
Ionicity and the theory of Schottky barriers,lectronic structure of four separate interfaces consisting of jellium (of Al density) in contact with the (111) surface of Si and the (110) surfaces of GaAs, ZnSe, and ZnS is investigated through the use of a self-consistent pseudopotential method. The barrier height and the surface density of state作者: 勉強(qiáng) 時(shí)間: 2025-3-29 12:02
Chemical trends in metal-semiconductor barrier heights,nic semiconductors is not that clearly defined and the outcome is diffused by data scattering. Furthermore, the data indicate .saturation of the interface parameter .for .= 1. Considering the definition of ., it follows that the true Schottky limit should occur for some number .≈: 2.0-3.0 rather tha作者: 可能性 時(shí)間: 2025-3-29 18:40
Transition in Schottky Barrier Formation with Chemical Reactivity,rrier heights of metals on individual compound semiconductors exhibit a sharp transition as a function of heat of reaction, increasing dramatically above an experimentally determined critical heat of reaction.作者: 歪曲道理 時(shí)間: 2025-3-29 19:53 作者: 招致 時(shí)間: 2025-3-30 03:44 作者: 迷住 時(shí)間: 2025-3-30 04:08 作者: CROW 時(shí)間: 2025-3-30 11:47
978-94-010-6780-5Editorial Jaca Book spa, Milano 1990作者: 有助于 時(shí)間: 2025-3-30 12:35 作者: Creatinine-Test 時(shí)間: 2025-3-30 20:12 作者: monogamy 時(shí)間: 2025-3-30 22:11
Significance of Skin Hydration,us oxide, and crystal rectifiers, made by pressing fine metal wires onto, for example, lead sulfide crystals were fabricated and applied in the fast growing electronic industries already at the beginning of the present century. This technical development is marked by patents issued in 1925.and 1904., respectively.作者: 思考才皺眉 時(shí)間: 2025-3-31 01:44
https://doi.org/10.1007/978-3-030-74322-2chte?nderungen der Leitungselektronen in einer Randzone an der Grenze MetallHalbleiter zurückgeführt wurde. Diese Theorie konnte in der Zwischenzeit weiter entwickelt werden unter folgcnden Grundvoraussetzungen:作者: Thyroiditis 時(shí)間: 2025-3-31 07:00
https://doi.org/10.1007/978-90-481-2543-2lchendichte und Teilchengeschwindigkeit gegeben. Das Ohmsche Gesetz ist erfüllt, wenn an der untersuchten Stelle die Teilchendichte von der Gr?βe und Richtung des Stromes unabh?ngig und ihre Geschwindigkeit der Feldst?rke proportional ist.作者: Kindle 時(shí)間: 2025-3-31 09:54
https://doi.org/10.1007/978-3-319-52721-5nic semiconductors is not that clearly defined and the outcome is diffused by data scattering. Furthermore, the data indicate .saturation of the interface parameter .for .= 1. Considering the definition of ., it follows that the true Schottky limit should occur for some number .≈: 2.0-3.0 rather than for exactly .= 1 as previously claimed.作者: 他去就結(jié)束 時(shí)間: 2025-3-31 13:39
Rajan Gupta,Saibal K. Pal,Sunil K. Muttoorrier heights of metals on individual compound semiconductors exhibit a sharp transition as a function of heat of reaction, increasing dramatically above an experimentally determined critical heat of reaction.作者: 窗簾等 時(shí)間: 2025-3-31 19:12
Introduction,us oxide, and crystal rectifiers, made by pressing fine metal wires onto, for example, lead sulfide crystals were fabricated and applied in the fast growing electronic industries already at the beginning of the present century. This technical development is marked by patents issued in 1925.and 1904., respectively.作者: probate 時(shí)間: 2025-3-31 22:59
Halbleitertheorie der Sperrschicht,chte?nderungen der Leitungselektronen in einer Randzone an der Grenze MetallHalbleiter zurückgeführt wurde. Diese Theorie konnte in der Zwischenzeit weiter entwickelt werden unter folgcnden Grundvoraussetzungen:作者: 浪蕩子 時(shí)間: 2025-4-1 03:12 作者: forager 時(shí)間: 2025-4-1 09:04
Chemical trends in metal-semiconductor barrier heights,nic semiconductors is not that clearly defined and the outcome is diffused by data scattering. Furthermore, the data indicate .saturation of the interface parameter .for .= 1. Considering the definition of ., it follows that the true Schottky limit should occur for some number .≈: 2.0-3.0 rather than for exactly .= 1 as previously claimed.
