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標(biāo)題: Titlebook: Electronic Structure and Optical Properties of Semiconductors; Marvin L. Cohen,James R. Chelikowsky Textbook 1989Latest edition Springer-V [打印本頁]

作者: obsess    時間: 2025-3-21 19:52
書目名稱Electronic Structure and Optical Properties of Semiconductors影響因子(影響力)




書目名稱Electronic Structure and Optical Properties of Semiconductors影響因子(影響力)學(xué)科排名




書目名稱Electronic Structure and Optical Properties of Semiconductors網(wǎng)絡(luò)公開度




書目名稱Electronic Structure and Optical Properties of Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Electronic Structure and Optical Properties of Semiconductors被引頻次




書目名稱Electronic Structure and Optical Properties of Semiconductors被引頻次學(xué)科排名




書目名稱Electronic Structure and Optical Properties of Semiconductors年度引用




書目名稱Electronic Structure and Optical Properties of Semiconductors年度引用學(xué)科排名




書目名稱Electronic Structure and Optical Properties of Semiconductors讀者反饋




書目名稱Electronic Structure and Optical Properties of Semiconductors讀者反饋學(xué)科排名





作者: 母豬    時間: 2025-3-21 23:30

作者: Delectable    時間: 2025-3-22 02:12
Meeting the Climate Change Challengee in the experimental reflectivity and modulated reflectivity for these materials than the corresponding III-V compounds. Typical materials in this group are ZnGeP. and CdSnAs.; these are the chalcopyrite analogs of GaP and InAs respectively.
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作者: 嘲弄    時間: 2025-3-22 14:43
Diamond and Zinc-Blende Structure Semiconductors,liches are often trivializing in nature, the comparison here is not. The amount of data for silicon is immense; almost every conceivable probe has been applied to silicon with a concurrent analysis of theoretical predictions. Most of the theoretical results given in this chapter are from [8.1].
作者: 嘲弄    時間: 2025-3-22 17:29
Nataliya Klimova,Oleg Kozyrev,Eduard Babkincompared with calculated density of states curves. The details and methods regarding the use of the measured spectra will be discussed elsewhere in this volume. Here we describe the theoretical calculations of the response functions.
作者: Leisureliness    時間: 2025-3-23 00:07
Yuri N. Toulouevski,Ilyaz Y. Zinurovfunction of x-rays is to probe the valence charge density of a semiconductor. The experimental determination of valence charge densities is difficult but not impossible, and some very good data exist for diamond and zinc-blende semiconductors. Finally, x-rays can be used to monitor temperature effects by studying Debye-Waller factors.
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作者: 美麗的寫    時間: 2025-3-23 12:06
High Energy Probes of Semiconductors: X-Rays,function of x-rays is to probe the valence charge density of a semiconductor. The experimental determination of valence charge densities is difficult but not impossible, and some very good data exist for diamond and zinc-blende semiconductors. Finally, x-rays can be used to monitor temperature effects by studying Debye-Waller factors.
作者: CT-angiography    時間: 2025-3-23 17:46
IV-VI Semiconductors, temperature dependence of the energy gaps, the energy positions of impurity levels, the high doping levels found, the static dielectric constants, and the electronic structure of some of the alloys of these compounds appear to be anomalous compared to the “conventional behavior” of the diamond and zinc-blende semiconductors.
作者: 災(zāi)禍    時間: 2025-3-23 21:16

作者: Gastric    時間: 2025-3-23 23:20
Triatomic, Layer, Chain, and Amorphous Models, metallic elements could then be used for semiconductor compounds. It was therefore realized that the EPM was capable of predicting electronic and optical properties of materials having complex crystal structures.
作者: 王得到    時間: 2025-3-24 03:49
Yuri N. Toulouevski,Ilyaz Y. Zinurovelatively easy to perform: the ratio of the incident photon flux to the reflected photon flux is measured as a function of photon energy. In principle, the only tools required for this procedure are the sample, a light source, a monochrometer, and a detector.
作者: Immortal    時間: 2025-3-24 07:14
Innovation in Esophageal Surgeryliches are often trivializing in nature, the comparison here is not. The amount of data for silicon is immense; almost every conceivable probe has been applied to silicon with a concurrent analysis of theoretical predictions. Most of the theoretical results given in this chapter are from [8.1].
作者: 無聊點好    時間: 2025-3-24 11:07
Electronic Structure and Optical Properties of Semiconductors
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作者: hurricane    時間: 2025-3-25 00:49
Response Functions and Density of States,uired to determine accurate energy eigenvalues and wavefunctions. The method requires a calculation of a response function to compare with experimental data. Two major sources of measured spectra are optical reflectivity and photoemission data for the energy distribution curves (EDC) of the emitted
作者: Emmenagogue    時間: 2025-3-25 05:42
Low Energy Probes of Semiconductors,ectronic structure within this energy region. The energy region of interest corresponds to photons having energies of a few hundredths to a few tenths of an electron volt, that is, the radio to infrared frequency region of the spectrum.
作者: 有抱負(fù)者    時間: 2025-3-25 07:32

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作者: MORPH    時間: 2025-3-26 01:03
IV-VI Semiconductors,ansitions are common. The most widely studied compounds in this group are PbTe, PbSe, PbS, SnTe, and GeTe. Their lattice constants are given in Table 11.1. These materials have small gaps which are usually less than 0.5 eV, hence they are good candidates for devices like infrared lasers and detector
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作者: liaison    時間: 2025-3-26 10:36
Masoud Karami,Azilah Binti Kasim,Arto OjalaSemiconductors have played a major role in the current technological revolution. The enormous advances in electronics and computer science were made possible by a better understanding of the properties of semiconductors, and it is likely that the revolution has only just begun.
作者: 抵消    時間: 2025-3-26 16:34
Introduction,Semiconductors have played a major role in the current technological revolution. The enormous advances in electronics and computer science were made possible by a better understanding of the properties of semiconductors, and it is likely that the revolution has only just begun.
作者: nitroglycerin    時間: 2025-3-26 19:26
Valeri Chukhlomin,Irina Chukhlominatue of this approach is that only the valence electrons need be considered. The cores are assumed to be frozen in an atomic-like configuration, and the valence electrons move in a net, weak one-electron potential.
作者: Suppository    時間: 2025-3-26 23:28
The Circular Construction Industryectronic structure within this energy region. The energy region of interest corresponds to photons having energies of a few hundredths to a few tenths of an electron volt, that is, the radio to infrared frequency region of the spectrum.
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https://doi.org/10.1007/978-3-642-61338-8band structure; crystal; crystal structure; electron; electron energy loss spectroscopy; electron spectro
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Springer Series in Solid-State Scienceshttp://image.papertrans.cn/e/image/306415.jpg
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作者: COWER    時間: 2025-3-27 23:40
Valeri Chukhlomin,Irina Chukhlominatue of this approach is that only the valence electrons need be considered. The cores are assumed to be frozen in an atomic-like configuration, and the valence electrons move in a net, weak one-electron potential.
作者: 策略    時間: 2025-3-28 05:16
Nataliya Klimova,Oleg Kozyrev,Eduard Babkinuired to determine accurate energy eigenvalues and wavefunctions. The method requires a calculation of a response function to compare with experimental data. Two major sources of measured spectra are optical reflectivity and photoemission data for the energy distribution curves (EDC) of the emitted
作者: 加入    時間: 2025-3-28 07:37
The Circular Construction Industryectronic structure within this energy region. The energy region of interest corresponds to photons having energies of a few hundredths to a few tenths of an electron volt, that is, the radio to infrared frequency region of the spectrum.
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作者: abreast    時間: 2025-3-28 19:04
Innovation in Esophageal Surgeryelemental nature and their enormous technological value, our theoretical and experimental knowledge of these elements probably exceeds that for any other solid state material. For example, it is often stated that silicon is to solid state physics what the hydrogen atom is to atomic physics. Though c
作者: 恫嚇    時間: 2025-3-29 00:18

作者: 挖掘    時間: 2025-3-29 07:03
https://doi.org/10.1057/9781137498663ansitions are common. The most widely studied compounds in this group are PbTe, PbSe, PbS, SnTe, and GeTe. Their lattice constants are given in Table 11.1. These materials have small gaps which are usually less than 0.5 eV, hence they are good candidates for devices like infrared lasers and detector
作者: 做方舟    時間: 2025-3-29 07:52
Oxidation of Phthalic Acid by CrO3 (VI),ements helped established the idea that a pseudopotential could be associated with an ion core independent of its chemical state. Pseudopotentials for metallic elements could then be used for semiconductor compounds. It was therefore realized that the EPM was capable of predicting electronic and opt
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作者: 點燃    時間: 2025-3-29 16:31
Electronic Structure and Optical Properties of Semiconductors978-3-642-61338-8Series ISSN 0171-1873 Series E-ISSN 2197-4179




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