標(biāo)題: Titlebook: Electronic Structure and Optical Properties of Semiconductors; Marvin L. Cohen,James R. Chelikowsky Textbook 19881st edition Springer-Verl [打印本頁(yè)] 作者: Johnson 時(shí)間: 2025-3-21 18:09
書(shū)目名稱Electronic Structure and Optical Properties of Semiconductors影響因子(影響力)
書(shū)目名稱Electronic Structure and Optical Properties of Semiconductors影響因子(影響力)學(xué)科排名
書(shū)目名稱Electronic Structure and Optical Properties of Semiconductors網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Electronic Structure and Optical Properties of Semiconductors網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Electronic Structure and Optical Properties of Semiconductors被引頻次
書(shū)目名稱Electronic Structure and Optical Properties of Semiconductors被引頻次學(xué)科排名
書(shū)目名稱Electronic Structure and Optical Properties of Semiconductors年度引用
書(shū)目名稱Electronic Structure and Optical Properties of Semiconductors年度引用學(xué)科排名
書(shū)目名稱Electronic Structure and Optical Properties of Semiconductors讀者反饋
書(shū)目名稱Electronic Structure and Optical Properties of Semiconductors讀者反饋學(xué)科排名
作者: 揉雜 時(shí)間: 2025-3-21 20:46 作者: Cryptic 時(shí)間: 2025-3-22 03:08 作者: Pcos971 時(shí)間: 2025-3-22 04:33 作者: 開(kāi)玩笑 時(shí)間: 2025-3-22 11:15 作者: 連鎖 時(shí)間: 2025-3-22 16:16 作者: 連鎖 時(shí)間: 2025-3-22 17:33 作者: Allodynia 時(shí)間: 2025-3-23 01:08 作者: BUOY 時(shí)間: 2025-3-23 05:24
Chalcopyrite Structure Semiconductors,II–V zinc-blende compounds. These ternary compounds have very interesting linear and nonlinear optical properties. There is considerably more structure in the experimental reflectivity and modulated reflectivity for these materials than the corresponding III–V compounds. Typical materials in this gr作者: Spina-Bifida 時(shí)間: 2025-3-23 07:17 作者: 調(diào)整 時(shí)間: 2025-3-23 10:26
Triatomic, Layer, Chain, and Amorphous Models,ements helped established the idea that a pseudopotential could be associated with an ion core independent of its chemical state. Pseudopotentials for metallic elements could then be used for semiconductor compounds. It was therefore realized that the EPM was capable of predicting electronic and opt作者: patriot 時(shí)間: 2025-3-23 16:27
Textbook 19881st edition to Sari Yamagishi for her patience and skill with the typing and production of the manuscript. Finally, we acknowledge the great patience of Helmut Lotsch and Manuel Cardona. Berkeley, CA M.L. Cohen Minneapolis, MN, J.R. Chelikowsky March 1988 VII Contents 1. Introduction...........................作者: 樂(lè)章 時(shí)間: 2025-3-23 19:35 作者: Infusion 時(shí)間: 2025-3-24 00:03
0171-1873 f Helmut Lotsch and Manuel Cardona. Berkeley, CA M.L. Cohen Minneapolis, MN, J.R. Chelikowsky March 1988 VII Contents 1. Introduction...........................978-3-642-97080-1Series ISSN 0171-1873 Series E-ISSN 2197-4179 作者: 松果 時(shí)間: 2025-3-24 03:29
https://doi.org/10.1007/978-3-642-97080-1band structure; semiconductor; semiconductor physics作者: 欲望 時(shí)間: 2025-3-24 09:23
Springer Series in Solid-State Scienceshttp://image.papertrans.cn/e/image/306414.jpg作者: oxidant 時(shí)間: 2025-3-24 14:08 作者: mutineer 時(shí)間: 2025-3-24 17:32
Innovation and Technology in Koreaectronic structure within this energy region. The energy region of interest corresponds to photons having energies of a few hundredths to a few tenths of an electron volt, that is, the radio to infrared frequency region of the spectrum.作者: Expiration 時(shí)間: 2025-3-24 21:14 作者: 大笑 時(shí)間: 2025-3-25 02:55
Low Energy Probes of Semiconductors,ectronic structure within this energy region. The energy region of interest corresponds to photons having energies of a few hundredths to a few tenths of an electron volt, that is, the radio to infrared frequency region of the spectrum.作者: 殘暴 時(shí)間: 2025-3-25 07:01 作者: 圓柱 時(shí)間: 2025-3-25 09:47
Electronic Structure and Optical Properties of Semiconductors978-3-642-97080-1Series ISSN 0171-1873 Series E-ISSN 2197-4179 作者: 解凍 時(shí)間: 2025-3-25 14:00 作者: cuticle 時(shí)間: 2025-3-25 16:41 作者: 星球的光亮度 時(shí)間: 2025-3-25 22:43 作者: 豐滿中國(guó) 時(shí)間: 2025-3-26 00:14 作者: scrutiny 時(shí)間: 2025-3-26 04:43 作者: integral 時(shí)間: 2025-3-26 10:04 作者: perjury 時(shí)間: 2025-3-26 13:01
Freedom of Contract and New Economic Modelselemental nature and their enormous technological value, our theoretical and experimental knowledge of these elements probably exceeds that for any other solid state material. For example, it is often stated that silicon is to solid state physics what the hydrogen atom is to atomic physics. Though c作者: crutch 時(shí)間: 2025-3-26 19:09
Alexander Chursin,Yuri Vlasov,Yury Makarov wurtzite structure can be constructed by considering two interpenetrating lattices. However, in this case they are hexagonal close packed lattices. The nearest neighbors and next nearest neighbors are the same in the ideal wurtzite and zinc-blende structures. For the ideal wurtzite case, the lattic作者: babble 時(shí)間: 2025-3-26 21:18
Patriek Blume,Maximilian GontardII–V zinc-blende compounds. These ternary compounds have very interesting linear and nonlinear optical properties. There is considerably more structure in the experimental reflectivity and modulated reflectivity for these materials than the corresponding III–V compounds. Typical materials in this gr作者: pantomime 時(shí)間: 2025-3-27 03:16
Medien – Wissen – Kommunikationansitions are common. The most widely studied compounds in this group are PbTe, PbSe, PbS, SnTe, and GeTe. Their lattice constants are given in Table 11.1. These materials have small gaps which are usually less than 0.5 eV, hence they are good candidates for devices like infrared lasers and detector作者: 同音 時(shí)間: 2025-3-27 08:11 作者: 得體 時(shí)間: 2025-3-27 13:04
https://doi.org/10.1007/978-3-8349-9462-2Semiconductors have played a major role in the current technological revolution. The enormous advances in electronics and computer science were made possible by a better understanding of the properties of semiconductors, and it is likely that the revolution has only just begun.作者: Type-1-Diabetes 時(shí)間: 2025-3-27 13:42 作者: arterioles 時(shí)間: 2025-3-27 18:08 作者: 直言不諱 時(shí)間: 2025-3-27 22:32 作者: 龍蝦 時(shí)間: 2025-3-28 04:28 作者: 沉默 時(shí)間: 2025-3-28 07:29
Textbook 19881st editionragement and stimulation from colleagues. Some said there was a need for instructional material in this area while others emphasized the utility of a research text. We tried to strike a compromise. The figures, tables, and references are included to enable researchers to obtain quickly essential inf作者: 刺耳 時(shí)間: 2025-3-28 10:27 作者: Fecal-Impaction 時(shí)間: 2025-3-28 16:20 作者: Picks-Disease 時(shí)間: 2025-3-28 21:26 作者: Interregnum 時(shí)間: 2025-3-29 01:30
Response Functions and Density of States,compared with calculated density of states curves. The details and methods regarding the use of the measured spectra, will be discussed elsewhere in this volume. Here we describe the theoretical calculations of the response functions.作者: 燕麥 時(shí)間: 2025-3-29 05:37
High Energy Probes of Semiconductors: X-Rays,function of x-rays is to probe the valence charge density of a semiconductor. The experimental determination of valence charge densities is difficult but not impossible, and some very good data exist for diamond and zinc-blende semiconductors. Finally, x-rays can be used to monitor temperature effects by studying Debye-Waller factors.作者: ALOFT 時(shí)間: 2025-3-29 08:00
,IV–VI Semiconductors, temperature dependence of the energy gaps, the energy positions of impurity levels, the high doping levels found, the static dielectric constants, and the electronic structure of some of the alloys of these compounds appear to be anomalous compared to the “conventional behavior” of the diamond and zinc-blende semiconductors.作者: Modify 時(shí)間: 2025-3-29 15:25 作者: fluffy 時(shí)間: 2025-3-29 17:49 作者: BOOR 時(shí)間: 2025-3-29 22:34 作者: 教義 時(shí)間: 2025-3-30 02:26
Freedom of Contract and New Economic Modelslichés are often trivializing in nature, the comparison here is not. The amount of data for silicon is immense; almost every conceivable probe has been applied to silicon with a concurrent analysis of theoretical predictions. Most of the theoretical results given in this chapter are from [8.1].作者: PAC 時(shí)間: 2025-3-30 08:00
Optical and Electronic Spectra of Semiconductors,elatively easy to perform: the ratio of the incident photon flux to the reflected photon flux is measured as a function of photon energy. In principle, the only tools required for this procedure are the sample, a light source, a monochrometer, and a detector.作者: 維持 時(shí)間: 2025-3-30 08:38
Diamond and Zinc-Blende Structure Semiconductors,lichés are often trivializing in nature, the comparison here is not. The amount of data for silicon is immense; almost every conceivable probe has been applied to silicon with a concurrent analysis of theoretical predictions. Most of the theoretical results given in this chapter are from [8.1].作者: DENT 時(shí)間: 2025-3-30 12:31
Introduction: A Systemic View of Innovationmum) band gap. Semiconductors are assumed to have band gaps from 0 to ～4eV, insulators >4eV, and semimetals ≤0. Gray Sn (α-Sn) is an example of a borderline material which has zero band gap. It has been called a zero-gap semiconductor; it has also been called in ideal semimetal.作者: TRUST 時(shí)間: 2025-3-30 17:33
Alexander Chursin,Yuri Vlasov,Yury Makarov is the same, a given volume of reciprocal space for wurtzite contains approximately twice as many reciprocal lattice points. The lattice constants for several wurtzite structure semiconductors are given in Table 9.1.
