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標(biāo)題: Titlebook: Electronic States and Optical Transitions in Semiconductor Heterostructures; Fedor T. Vasko,Alex V. Kuznetsov Textbook 1999 Springer Scien [打印本頁]

作者: 無法修復(fù)    時(shí)間: 2025-3-21 17:03
書目名稱Electronic States and Optical Transitions in Semiconductor Heterostructures影響因子(影響力)




書目名稱Electronic States and Optical Transitions in Semiconductor Heterostructures影響因子(影響力)學(xué)科排名




書目名稱Electronic States and Optical Transitions in Semiconductor Heterostructures網(wǎng)絡(luò)公開度




書目名稱Electronic States and Optical Transitions in Semiconductor Heterostructures網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Electronic States and Optical Transitions in Semiconductor Heterostructures被引頻次




書目名稱Electronic States and Optical Transitions in Semiconductor Heterostructures被引頻次學(xué)科排名




書目名稱Electronic States and Optical Transitions in Semiconductor Heterostructures年度引用




書目名稱Electronic States and Optical Transitions in Semiconductor Heterostructures年度引用學(xué)科排名




書目名稱Electronic States and Optical Transitions in Semiconductor Heterostructures讀者反饋




書目名稱Electronic States and Optical Transitions in Semiconductor Heterostructures讀者反饋學(xué)科排名





作者: META    時(shí)間: 2025-3-21 22:06

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作者: keloid    時(shí)間: 2025-3-22 05:54
V.V. Panasyuk,V.I. Marukha,V.P. Sylovanyukation, which in the second step transforms into a real excitation with energy ?(ω. - ω.) and emits a scattered photon with energy ?ω.. In contrast to that, interband absorption and luminescence considered in previous chapters probe only real electronic excitations, and energy is conserved in all individual acts of absorption or emission.
作者: 假    時(shí)間: 2025-3-22 10:17
Ultrafast Processes in Heterostructures,-time dynamics of condensed matter systems, the interest in these time-resolved studies is driven by the rapidly increasing speed of the operation of micro- and optoelectronic devices, which makes the understanding of the ultrafast dynamics of heterostructures a matter of considerable practical importance.
作者: 艱苦地移動(dòng)    時(shí)間: 2025-3-22 13:59
Heterostructure-Based Optoelectronic Devices, components, such as consumer electronics, display technology, lighting, and optical data storage. The understanding of the physics of optical transitions in heterostructures is the basis for selecting the appropriate material system and the geometry of the structure that leads to desired operating parameters for a specific application.
作者: 艱苦地移動(dòng)    時(shí)間: 2025-3-22 20:23

作者: Biguanides    時(shí)間: 2025-3-22 23:26
Interband Optical Transitions in Heterostructures,ency of interband transitions can in fact lie in the mid-infrared. The transitions between quantum confined states originating from the same band (intraband transitions) usually correspond to lower photon energies and will be treated separately in Chapter 8.
作者: amygdala    時(shí)間: 2025-3-23 02:14
Scattering of Light on Low-Dimensional Electrons,ation, which in the second step transforms into a real excitation with energy ?(ω. - ω.) and emits a scattered photon with energy ?ω.. In contrast to that, interband absorption and luminescence considered in previous chapters probe only real electronic excitations, and energy is conserved in all individual acts of absorption or emission.
作者: Anemia    時(shí)間: 2025-3-23 08:18

作者: 退出可食用    時(shí)間: 2025-3-23 13:00
The Relevance of Medicine in Football components, such as consumer electronics, display technology, lighting, and optical data storage. The understanding of the physics of optical transitions in heterostructures is the basis for selecting the appropriate material system and the geometry of the structure that leads to desired operating parameters for a specific application.
作者: Scleroderma    時(shí)間: 2025-3-23 16:06

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作者: 的闡明    時(shí)間: 2025-3-24 06:08
Rong Zheng,Roger. I. Tanner,Xi-Jun Fantwo different materials with different positions of band extrema (i.e., potential energy), different effective masses, different .-factors, etc. Understanding the electronic properties of abrupt heterojunctions is the key part of heterostructure physics.
作者: 新鮮    時(shí)間: 2025-3-24 08:10

作者: 迷住    時(shí)間: 2025-3-24 13:30

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978-1-4612-6807-9Springer Science+Business Media New York 1999
作者: 新奇    時(shí)間: 2025-3-25 01:08
Electronic States and Optical Transitions in Semiconductor Heterostructures978-1-4612-0535-7Series ISSN 0938-037X
作者: 焦慮    時(shí)間: 2025-3-25 04:10
https://doi.org/10.1007/978-1-4612-0535-7Exciton; electromagnetic wave; electronic structure; optical properties; optics; quantum wells; semiconduc
作者: Frequency    時(shí)間: 2025-3-25 08:26

作者: finite    時(shí)間: 2025-3-25 12:59

作者: Climate    時(shí)間: 2025-3-25 19:04
Electrons in Low-Dimensional Structures,tal the discreteness of the energy levels cannot be resolved because the energy separation between the levels is too small. However, in semiconductor heterostructures the electrons can be easily confined to very small spatial regions, where the quantization of their energy spectrum plays a crucial role.
作者: cocoon    時(shí)間: 2025-3-25 20:35

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作者: 凈禮    時(shí)間: 2025-3-26 13:16
Graduate Texts in Contemporary Physicshttp://image.papertrans.cn/e/image/306403.jpg
作者: 使混合    時(shí)間: 2025-3-26 19:19
Introduction to Injection Laryngoplasty,tor physics, largely due to progress in growth technologies which are now capable of producing ultrathin layers (up to a few monolayers) of different semiconductor materials. The availability of structures with nearly ideal, well-controlled properties has made semiconductor heterostructures a testin
作者: Generic-Drug    時(shí)間: 2025-3-26 20:56
Rong Zheng,Roger. I. Tanner,Xi-Jun Fangies can routinely create heterojunctions just one monolayer thick. In such abrupt heterojunctions, the parameters of the crystal (chemical composition, band structure, etc.) experience an abrupt change over a distance of the order of the lattice constant. A heterojunc-tion is qualitatively differen
作者: 輕快來事    時(shí)間: 2025-3-27 03:31
Troubleshooting and Maintenance,tal the discreteness of the energy levels cannot be resolved because the energy separation between the levels is too small. However, in semiconductor heterostructures the electrons can be easily confined to very small spatial regions, where the quantization of their energy spectrum plays a crucial r
作者: 邪惡的你    時(shí)間: 2025-3-27 08:49
Styrene Butadiene Block Copolymer,tures have impurities and geometrical imperfections that affect electronic states. Even more importantly, the electrons interact with each other and with other elementary excitations. In this chapter we describe the formation of . electronic states due to interaction with structure imperfection and
作者: INERT    時(shí)間: 2025-3-27 09:41

作者: 注射器    時(shí)間: 2025-3-27 14:32
https://doi.org/10.1007/978-0-387-76595-2re responsible for a variety of physical effects, from luminescence to las-ing. Many important device applications of heterostructures, such as lasers and light-emitting diodes, operate by using radiative processes. These processes are also very important for the heterostructure technology itself, s
作者: 開始從未    時(shí)間: 2025-3-27 18:54

作者: Fantasy    時(shí)間: 2025-3-28 00:41
Injection-Induced Breast Siliconomasansitions from these levels into the continuum states. Depending on the material system and the geometry of the structure, these . transitions correspond to photon energies from a few meV to a few hundred meV, and the respective wavelengths range from submillimiter to mid-infrared. Experimental stud
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作者: Focus-Words    時(shí)間: 2025-3-28 15:02
Intersubband Optical Transitions,nd fiber optical waveguides for this spectral range. A wide range of potential applications requires further progress in the development of semiconductor devices for the generation, detection, and modulation of far-infrared radiation.
作者: profligate    時(shí)間: 2025-3-28 22:20
Textbook 1999operating characteristics of traditional micro- and optoelectronic compo- nents. As a result of the growing importance of heterostructure physics, more and more people are entering this dynamic field, either from graduate school or from other areas of research. For the new entrants, the task of fami
作者: 持續(xù)    時(shí)間: 2025-3-29 02:41
0938-037X lt of the growing importance of heterostructure physics, more and more people are entering this dynamic field, either from graduate school or from other areas of research. For the new entrants, the task of fami978-1-4612-6807-9978-1-4612-0535-7Series ISSN 0938-037X
作者: 名詞    時(shí)間: 2025-3-29 04:25
Injection-Induced Breast Siliconomasnd fiber optical waveguides for this spectral range. A wide range of potential applications requires further progress in the development of semiconductor devices for the generation, detection, and modulation of far-infrared radiation.
作者: BILL    時(shí)間: 2025-3-29 07:24
Electronic States and Optical Transitions in Semiconductor Heterostructures
作者: Latency    時(shí)間: 2025-3-29 13:24
Introduction,tor physics, largely due to progress in growth technologies which are now capable of producing ultrathin layers (up to a few monolayers) of different semiconductor materials. The availability of structures with nearly ideal, well-controlled properties has made semiconductor heterostructures a testin
作者: LEVER    時(shí)間: 2025-3-29 15:33
Electronic Structure of Abrupt Heterojunctions,gies can routinely create heterojunctions just one monolayer thick. In such abrupt heterojunctions, the parameters of the crystal (chemical composition, band structure, etc.) experience an abrupt change over a distance of the order of the lattice constant. A heterojunc-tion is qualitatively differen
作者: 欲望    時(shí)間: 2025-3-29 20:44
Electrons in Low-Dimensional Structures,tal the discreteness of the energy levels cannot be resolved because the energy separation between the levels is too small. However, in semiconductor heterostructures the electrons can be easily confined to very small spatial regions, where the quantization of their energy spectrum plays a crucial r
作者: Perigee    時(shí)間: 2025-3-30 01:48





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