標(biāo)題: Titlebook: Electronic Properties of Semiconductor Interfaces; Winfried M?nch Book 2004 Springer-Verlag Berlin Heidelberg 2004 Interface-induced gap s [打印本頁] 作者: 萬能 時間: 2025-3-21 16:10
書目名稱Electronic Properties of Semiconductor Interfaces影響因子(影響力)
書目名稱Electronic Properties of Semiconductor Interfaces影響因子(影響力)學(xué)科排名
書目名稱Electronic Properties of Semiconductor Interfaces網(wǎng)絡(luò)公開度
書目名稱Electronic Properties of Semiconductor Interfaces網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Electronic Properties of Semiconductor Interfaces被引頻次
書目名稱Electronic Properties of Semiconductor Interfaces被引頻次學(xué)科排名
書目名稱Electronic Properties of Semiconductor Interfaces年度引用
書目名稱Electronic Properties of Semiconductor Interfaces年度引用學(xué)科排名
書目名稱Electronic Properties of Semiconductor Interfaces讀者反饋
書目名稱Electronic Properties of Semiconductor Interfaces讀者反饋學(xué)科排名
作者: entreat 時間: 2025-3-21 21:22
Book 2004ing’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively. .作者: gorgeous 時間: 2025-3-22 00:35 作者: 入會 時間: 2025-3-22 07:24
The IFIGS-and-Electronegativity Concept: Experiment and Theory,orce lowering .. Only the homogeneous barrier heights .are a reliable basis for a comparison with theoretically values Local variations of the barrier heights of real Schottky contacts on the nm-scale were directly detected by scanning ballistic-electron emission spectroscopy. The respective local B作者: 螢火蟲 時間: 2025-3-22 11:32 作者: enfeeble 時間: 2025-3-22 15:10 作者: enfeeble 時間: 2025-3-22 17:40
Informatorium voor Voeding en Di?tetiekorce lowering .. Only the homogeneous barrier heights .are a reliable basis for a comparison with theoretically values Local variations of the barrier heights of real Schottky contacts on the nm-scale were directly detected by scanning ballistic-electron emission spectroscopy. The respective local B作者: separate 時間: 2025-3-22 21:54
Voeding bij galblaas- en leveraandoeningen, . [1988, 1990], . et al. [1994] and . et al. [1999] calculated the quasi-particle shifts of the valence-band maxima of the III–V and the II–VI compound semiconductors in the GW approximation. The quasi-particle corrections move the valence band-maxima to lower energies and, on the average, the GW c作者: 冥界三河 時間: 2025-3-23 05:26 作者: Chronic 時間: 2025-3-23 08:15
W.K. Visser,S. Runia,J. Tiebie,Y.F. Heerkenshe current density is then given by..where , .. and .. are the electron mobility and diffusion constant, respectively. The electric-field strength .(.) in the barrier region may be written as ...(.) = d[W.(.) ? ..]/dz, where the conduction-band bottom ..(.) is referenced to the energy position .. of the Fermi level in the metal bulk.作者: 誘使 時間: 2025-3-23 13:37
M. D. van de Wetering,M. E. Dijsselhof wide resonances [. 1935]. This is schematically explained in Fig. 9.1. For the same reason, foreign atoms or, more generally speaking, defects at metal—semiconductor interfaces will also show broad interface states.作者: 外表讀作 時間: 2025-3-23 17:45
0931-5195 ntain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interface作者: 違抗 時間: 2025-3-23 19:13 作者: TATE 時間: 2025-3-23 23:07 作者: SEEK 時間: 2025-3-24 03:59
Ohmic Contacts,creasingly important. As a consequence of this, the . characteristics of metal contacts on highly doped semiconductors show ohmic behavior. There are, however, also metal—semiconductor contacts that are . ohmic.作者: MURKY 時間: 2025-3-24 08:25
Book 2004 and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as a unifying theme, M?nch explains the band-struct作者: Relinquish 時間: 2025-3-24 11:52
Determination of Barrier Heights and offsets,he current density is then given by..where , .. and .. are the electron mobility and diffusion constant, respectively. The electric-field strength .(.) in the barrier region may be written as ...(.) = d[W.(.) ? ..]/dz, where the conduction-band bottom ..(.) is referenced to the energy position .. of the Fermi level in the metal bulk.作者: Foreknowledge 時間: 2025-3-24 18:28 作者: 種類 時間: 2025-3-24 19:41
Introduction,n an article entitled ... This publication deals with an interface-controlled device and, in this, it is an excellent example of the intimate interaction between fundamental research of bulk, surface, as well as interface properties and device physics that has been a characteristic of semiconductor 作者: GRIPE 時間: 2025-3-25 00:34 作者: Preamble 時間: 2025-3-25 04:57
Laterally Inhomogeneous Schottky Contacts,ality factors . are generally larger than ..,the value determined by the image-force effect only. In other words, the barrier heights depend more strongly on the applied voltage than because of the Schottky effect. Obviously, . metal—semiconductor interfaces are in one way or another not ideal. Ball作者: heckle 時間: 2025-3-25 07:54 作者: 起草 時間: 2025-3-25 14:03 作者: 懶惰民族 時間: 2025-3-25 18:22 作者: peptic-ulcer 時間: 2025-3-25 23:57
Extrinsic Interface Dipoles,fficult task. Predeposited atoms were found to form compounds with subsequently evaporated metal atoms, to segregate at the surface of the growing metal film, or to desorb during metal evaporation. Hydrogen preadsorbed on diamond surfaces, on the other hand, happens to be stable against subsequent d作者: 脫離 時間: 2025-3-26 03:05
Ohmic Contacts,onductors are well within their fundamental band gaps. For sufficiently large barrier heights the current transport is then dominated by thermionic emission over the barrier. However, the . characteristics will become apparently ohmic if the barrier height drops to below approximately 0.3 eV. The . 作者: 豐滿有漂亮 時間: 2025-3-26 07:40
https://doi.org/10.1007/978-3-662-06945-5Interface-induced gap states; Metal-semiconductor contacts; Schottky contacts; Semiconductor heterostru作者: 條街道往前推 時間: 2025-3-26 08:48 作者: Serenity 時間: 2025-3-26 16:10 作者: nurture 時間: 2025-3-26 19:50
Voeding bij hemato-oncologische ziekten,fficult task. Predeposited atoms were found to form compounds with subsequently evaporated metal atoms, to segregate at the surface of the growing metal film, or to desorb during metal evaporation. Hydrogen preadsorbed on diamond surfaces, on the other hand, happens to be stable against subsequent deposition of most metals.作者: 懶惰民族 時間: 2025-3-26 22:16
Extrinsic Interface Dipoles,fficult task. Predeposited atoms were found to form compounds with subsequently evaporated metal atoms, to segregate at the surface of the growing metal film, or to desorb during metal evaporation. Hydrogen preadsorbed on diamond surfaces, on the other hand, happens to be stable against subsequent deposition of most metals.作者: left-ventricle 時間: 2025-3-27 03:15
Winfried M?nchBasic standard book.Important with respect to semiconductor structures.Includes supplementary material: 作者: 高調(diào) 時間: 2025-3-27 09:13 作者: 吊胃口 時間: 2025-3-27 10:22 作者: Bother 時間: 2025-3-27 14:52 作者: 芳香一點(diǎn) 時間: 2025-3-27 18:38
L. Veenje Smits,N. A. M. Wierdsmaality factors . are generally larger than ..,the value determined by the image-force effect only. In other words, the barrier heights depend more strongly on the applied voltage than because of the Schottky effect. Obviously, . metal—semiconductor interfaces are in one way or another not ideal. Ball作者: Tidious 時間: 2025-3-27 23:20
Informatorium voor Voeding en Di?tetiekrrier height which have lateral dimensions smaller than the depletion-layer width and which are embedded in areas of larger but constant barrier height. The current—voltage characteristics of such . Schottky are characterized by . barrier heights and ideality factors that are larger than the value .作者: Aspirin 時間: 2025-3-28 03:41
Voeding bij galblaas- en leveraandoeningen,l studies of the ground-state properties of solids. However, excitation energies such as, for example, the width of the energy gaps between the valence and conduction bands of semiconductors cannot be correctly obtained from such calculations. The fundamental band gaps of the elemental semiconductor作者: 使長胖 時間: 2025-3-28 07:04
M. D. van de Wetering,M. E. Dijsselhofadatoms are sparsely distributed so that they are non-interacting. This behavior is quite different from what occurs on metal surfaces. The interaction of the adatoms with the continuum of conduction-band states of the metal, which reaches up to the Fermi level, broadens the sharp atomic levels into作者: photophobia 時間: 2025-3-28 12:08
Voeding bij hemato-oncologische ziekten,fficult task. Predeposited atoms were found to form compounds with subsequently evaporated metal atoms, to segregate at the surface of the growing metal film, or to desorb during metal evaporation. Hydrogen preadsorbed on diamond surfaces, on the other hand, happens to be stable against subsequent d作者: exacerbate 時間: 2025-3-28 16:19 作者: painkillers 時間: 2025-3-28 20:40 作者: 極端的正確性 時間: 2025-3-28 23:50 作者: BLINK 時間: 2025-3-29 03:11
Informatorium voor Voeding en Di?tetiekThe energies of the optical transitions in the bulk of semiconductors are sensitive to variations in temperature and to the application of external pressure. The effects of the temperature as well as the pressure on the barrier heights of Schottky contacts are well explained by the MIGS model.作者: PHON 時間: 2025-3-29 10:47 作者: predict 時間: 2025-3-29 13:33
The IFIGS-and-Electronegativity Theory,Studies of core-level photoemission revealed the partial ionic character of the covalent bonds between metal and substrate atoms on semiconductor surfaces covered with metal adatoms.作者: 祝賀 時間: 2025-3-29 19:09 作者: 連累 時間: 2025-3-29 19:53
Synthetic Energy Carriers—The Next Best Thing?sible), reliable, and should carry the lowest external costs. While biomass and solar systems can plausibly meet these criteria, coal-derived energy forms are more troublesome. Nuclear power, though it is superficially clean, may be unacceptable for reasons other than price.
