標題: Titlebook: Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures; J. M. Chamberlain,Laurence Eaves,Jean-Claude Porta Book [打印本頁] 作者: legerdemain 時間: 2025-3-21 17:51
書目名稱Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures影響因子(影響力)
書目名稱Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures影響因子(影響力)學科排名
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書目名稱Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures網(wǎng)絡公開度學科排名
書目名稱Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures被引頻次
書目名稱Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures被引頻次學科排名
書目名稱Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures年度引用
書目名稱Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures年度引用學科排名
書目名稱Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures讀者反饋
書目名稱Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures讀者反饋學科排名
作者: expound 時間: 2025-3-21 23:50 作者: TERRA 時間: 2025-3-22 00:35
Grundlagen des zu entwickelnden Konzeptesies for carriers incident on the sample (Büttiker, 1986a; 1988a). It is transport in open conductors with current probes and voltage probes which is addressed. The formulation of resistances in terms of transmission of carriers through a conducting structure and reflection at the conductor stressing作者: Obstacle 時間: 2025-3-22 05:17 作者: 分解 時間: 2025-3-22 09:20
https://doi.org/10.1007/978-3-322-87248-7blem, the properties of confined electrons depend solely upon the volume containing them. In all real systems, however, the characteristics of the boundaries themselves play a significant role in the physics observed. Recent advances in epitaxial growth techniques now permit nearly ideal heterointer作者: defray 時間: 2025-3-22 16:29 作者: defray 時間: 2025-3-22 20:26
https://doi.org/10.1007/978-3-658-09661-8iscrete nature of the electron energy spectrum. When a weak one- or two-dimensional periodic potential is superimposed on the two-dimensional electron gas a novel type of oscillations occurs which reflects the commensurability of the relevant lengths in these systems — the cyclotron orbit diameter a作者: 礦石 時間: 2025-3-23 00:26
Informationseffizienz auf Kapitalm?rktentions to electron systems of low dimensions, i.e., two-, one- and zero-dimensional systems (2DES, 1DES, 0DES), in particular grating coupler induced 2D plasmon resonances, intersubband resonances, minigaps and local plasmons in charge density modulated systems, dc transport and far infrared response作者: intrigue 時間: 2025-3-23 02:15 作者: 恩惠 時間: 2025-3-23 07:19
Informationsgehalt von Credit Ratingsd by quantum mechanical phenomena. In particular, nanostructures on Si MOSFETs and GaAs MODFETs have shown modulations in their conductance versus gate voltage characteristics that have been attributed to quantum mechanical effects. In this paper, we review a modeling scheme which gives a unified wa作者: Entreaty 時間: 2025-3-23 10:44
https://doi.org/10.1007/978-3-322-89373-4e is reviewed. In this formalism, the electric field is described through the use of the vector potential. This choice of gauge leads to a natural set of basis functions for describing Bloch electron dynamics; in addition, a basis set of localized, electric field-dependent Wannier functions is estab作者: 成績上升 時間: 2025-3-23 17:25
https://doi.org/10.1007/978-3-8349-9490-5ng, the main tools are lift-off and dry etching. Both are scalable down to nanometer dimensions and have been used to produce quantum-size devices. Current control requires both Schottky and ohmic contacts on the device. Progress in processing technology now allows better control of the contact para作者: 溝通 時間: 2025-3-23 19:34 作者: SYN 時間: 2025-3-23 23:56 作者: farewell 時間: 2025-3-24 03:06
,?kologieorientierte Unternehmensführung,barrier heterostructures, there has been increasing interest in the field. This renewed interest arises in part because of the advances in the ease of fabrication by molecular beam epitaxy (MBE) of the atomically thin structures required, and in part because the charge-transport process has been sho作者: 摻假 時間: 2025-3-24 07:18 作者: ACTIN 時間: 2025-3-24 11:15 作者: 發(fā)微光 時間: 2025-3-24 17:22
Werkzeuge zur Informationslogistik, that have widths comparable to the de Broglie wavelength of energetic electrons. Such structures are ideal for studying and exploiting the physics of electron tunneling in semiconductors. A wide range of potential energy profiles can be designed and implemented to facilitate the investigation of fu作者: Odyssey 時間: 2025-3-24 21:47
https://doi.org/10.1007/978-3-322-95377-3250 papers per year are published in this field and it is expected that this number increases further due to the application of the QHE in metrology and the discovery of new phenomena like ballistic transport in one-dimensional systems[l,2] and new phenomena in the field of the Fractional Quantum Hall Effect.[3,4]作者: 諂媚于人 時間: 2025-3-25 02:47
The Quantum Hall Effect and Related Problems,250 papers per year are published in this field and it is expected that this number increases further due to the application of the QHE in metrology and the discovery of new phenomena like ballistic transport in one-dimensional systems[l,2] and new phenomena in the field of the Fractional Quantum Hall Effect.[3,4]作者: 表示問 時間: 2025-3-25 03:39 作者: saturated-fat 時間: 2025-3-25 08:24
978-1-4684-7414-5Springer Science+Business Media New York 1990作者: aerobic 時間: 2025-3-25 11:56 作者: NAUT 時間: 2025-3-25 16:00 作者: SNEER 時間: 2025-3-25 21:21
https://doi.org/10.1007/978-3-663-10347-9Following the past twenty-year evolutionary path in the interdisciplinary research of semiconductor superlattices and other quantum structures, significant milestones are presented with emphasis on experimental achievements in the physics of reduced dimensionality associated with technological advances.作者: offense 時間: 2025-3-26 02:27 作者: 討好美人 時間: 2025-3-26 07:14 作者: countenance 時間: 2025-3-26 09:50
Optical Probes of Resonant Tunneling Structures, electron tunneling in semiconductors. A wide range of potential energy profiles can be designed and implemented to facilitate the investigation of fundamental problems such as the time taken to tunnel, and the possible influences of scattering events on tunneling.作者: custody 時間: 2025-3-26 13:56 作者: 一大群 時間: 2025-3-26 17:49 作者: LITHE 時間: 2025-3-26 23:23
Spieltheoretische Verhandlungsmodelle, (B parallel to the plane of the barriers) on the resonances in I(V) is examined. Resonant tunnelling into hybrid magneto-electric states of the quantum well is observed and is interpreted using the effective mass approximation.作者: offense 時間: 2025-3-27 03:41 作者: Brain-Imaging 時間: 2025-3-27 08:39 作者: PET-scan 時間: 2025-3-27 12:28
0258-1221 f the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis 作者: Harbor 時間: 2025-3-27 15:41
Informationseffizienz auf Kapitalm?rktenD plasmon resonances, intersubband resonances, minigaps and local plasmons in charge density modulated systems, dc transport and far infrared response in 1DES and 0DES as well as quantum well exciton polaritons in the photoluminescence of microstructured quantum well systems.作者: 匯總 時間: 2025-3-27 19:49 作者: –FER 時間: 2025-3-27 22:04 作者: BLA 時間: 2025-3-28 03:04
High Magnetic Fields and Low Dimensional Structures: A Survey of Transport and Optical Effects,a matter of fact, high magnetic fields have become an indispensable tool for the research on 2D systems. This is also reflected by the programs of the recent international conferences which were devoted towards the investigation of the electronic structure of 2D systems.作者: faultfinder 時間: 2025-3-28 06:32
Recent Advances in Microfabrication,meters, and the increased flexibility hereby obtained can be considered as a first step towards real “contact engineering”. Finally, flexibility in the use of substrates has also been increased by the development of novel techniques for composite substrates fabrication and for device transplantation from one substrate to another.作者: 解開 時間: 2025-3-28 12:37 作者: membrane 時間: 2025-3-28 16:58 作者: 閃光你我 時間: 2025-3-28 22:26
,Interdependenzen effizienter M?rkte,stance are observed that arise from phase interference among topologically inequivalent paths (e.g. around opposite arms of a ring). The large majority of experiments demonstrating these effects have involved topologies with one or a relatively small number of individual rings (Umbach .., 1986).作者: 作繭自縛 時間: 2025-3-29 02:57
Informationsgehalt von Credit Ratingscific devices. We have called this scheme the . because most of the calculations can be written in terms of separate convolutions involving the individual phenomena of temperature, mobility, voltage, and structure.作者: Mucosa 時間: 2025-3-29 05:46
https://doi.org/10.1007/978-3-322-89373-4levant to applications concerning spatially localized inhomogeneous electric fields such as occur in problems involving tunneling through “band-enginereed” tunneling barriers and impurity scattering is discussed.作者: 預測 時間: 2025-3-29 07:45 作者: 暴行 時間: 2025-3-29 13:47
Die Entwicklung der Informationstechnikch may make a quantitative comparison with theoretical models difficult. Entire books (Duke, 1969; Wolf, 1985) have been devoted to tunneling-related issues, many of which are still unresolved or controversial, and still awaiting for unequivocal experimental confirmation.作者: 前奏曲 時間: 2025-3-29 17:49 作者: 拱形面包 時間: 2025-3-29 21:39
,Magnetoconductance Oscillations Linear in ΔB In Semiconductor Surface Superlattices,stance are observed that arise from phase interference among topologically inequivalent paths (e.g. around opposite arms of a ring). The large majority of experiments demonstrating these effects have involved topologies with one or a relatively small number of individual rings (Umbach .., 1986).作者: fixed-joint 時間: 2025-3-30 01:52 作者: 能量守恒 時間: 2025-3-30 05:16 作者: 要塞 時間: 2025-3-30 12:04
The Background to Resonant Tunnelling Theory,of lifetimes observed experimentally for radioactive decay is a consequence of the sensitivity of the transmission coefficient to variations in the tunnel barrier. For the same reason, a wide range of lifetimes should also be expected for tunnelling in semiconductors even though the potential barriers are much smaller.作者: 擦掉 時間: 2025-3-30 14:31
Dynamic Polarization Effects in Tunneling,ch may make a quantitative comparison with theoretical models difficult. Entire books (Duke, 1969; Wolf, 1985) have been devoted to tunneling-related issues, many of which are still unresolved or controversial, and still awaiting for unequivocal experimental confirmation.作者: 有助于 時間: 2025-3-30 18:42
Book 1990n by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were 作者: isotope 時間: 2025-3-30 21:24 作者: FOLD 時間: 2025-3-31 02:33 作者: 咽下 時間: 2025-3-31 06:03
https://doi.org/10.1007/978-3-322-87248-7ea, always reveals randomness. In the case of the best epitaxially-grown interfaces this will be manifested as a finite domain size for the last few atomic layers, as schematically depicted in Fig. 1 (.). The edges of these domains delineate random patches of surfaces in registry with the underlying作者: DALLY 時間: 2025-3-31 09:21 作者: CLEFT 時間: 2025-3-31 15:43
https://doi.org/10.1007/978-3-658-07748-8use of wave packets and the calculation and extrapolation of the peak motion. Büttiker and Landauer (1982) have criticized this technique, since the shape of a wave packet can differ appreciably from that of an incident packet. Moreover, this approach invariably invokes also an extrapolation procedu作者: 假 時間: 2025-3-31 19:58
Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures作者: 入會 時間: 2025-4-1 01:39 作者: 厚臉皮 時間: 2025-4-1 03:26
Transmission, Reflection and the Resistance of Small Conductors,nd microscopic conductors. This approach has also been applied to the phenomena of huge conductance fluctuations in multi-probe conductors (Büttiker, 1987; Baranger et al. 1988, Kane et al. 1989), and to low field magnetic anomalies in ballistic conductors (Roukes et al. 1987; Timp et al. 1988; Taka作者: Enzyme 時間: 2025-4-1 07:28 作者: isotope 時間: 2025-4-1 12:45
Electron-Boundary Scattering in Quantum Wires,ea, always reveals randomness. In the case of the best epitaxially-grown interfaces this will be manifested as a finite domain size for the last few atomic layers, as schematically depicted in Fig. 1 (.). The edges of these domains delineate random patches of surfaces in registry with the underlying作者: Hectic 時間: 2025-4-1 17:25 作者: wall-stress 時間: 2025-4-1 19:09 作者: 琺瑯 時間: 2025-4-2 02:24
