標(biāo)題: Titlebook: Electronic Properties of Doped Semiconductors; Boris I. Shklovskii,Alex L. Efros Book 1984 Springer-Verlag Berlin Heidelberg 1984 Properti [打印本頁(yè)] 作者: Radiofrequency 時(shí)間: 2025-3-21 17:19
書目名稱Electronic Properties of Doped Semiconductors影響因子(影響力)
書目名稱Electronic Properties of Doped Semiconductors影響因子(影響力)學(xué)科排名
書目名稱Electronic Properties of Doped Semiconductors網(wǎng)絡(luò)公開度
書目名稱Electronic Properties of Doped Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Electronic Properties of Doped Semiconductors被引頻次
書目名稱Electronic Properties of Doped Semiconductors被引頻次學(xué)科排名
書目名稱Electronic Properties of Doped Semiconductors年度引用
書目名稱Electronic Properties of Doped Semiconductors年度引用學(xué)科排名
書目名稱Electronic Properties of Doped Semiconductors讀者反饋
書目名稱Electronic Properties of Doped Semiconductors讀者反饋學(xué)科排名
作者: aggrieve 時(shí)間: 2025-3-21 23:33
The Structure of the Impurity Band for Lightly Doped Semiconductors in general. A detailed investigation of the impurity band has been carried out recently by computer (Chap. 14). In the present chapter we formulate the problem (Sect. 3.4), and discuss its solutions in the limiting cases of low compensation (Sects. 3.2 and 3.3) and high compensation (Sect. 3.4).作者: Inelasticity 時(shí)間: 2025-3-22 03:39 作者: ASTER 時(shí)間: 2025-3-22 07:41 作者: 知識(shí) 時(shí)間: 2025-3-22 09:28 作者: Subdue 時(shí)間: 2025-3-22 15:41 作者: Subdue 時(shí)間: 2025-3-22 18:53
Correlation Effects on the Density of States and Hopping Conductionates vanishes at the Fermi level. This has an important effect on the temperature dependence of hopping conduction, especially in the variablerange hopping region. The existence of correlation implies that the random resistor network model, which underlies the theory of hopping conduction desribed i作者: 吹牛者 時(shí)間: 2025-3-22 21:26
The Density-of-States Tail and Interband Light Absorptione the density of states is very low. We also discuss a simple modification of this method which allows to estimate the exponent using only the Poisson distribution and elementary quantum mechanics. A classification is proposed for the types of density of states which occur in doped semiconductors. T作者: 不知疲倦 時(shí)間: 2025-3-23 02:49
The Theory of Heavily Doped and Highly Compensated Semiconductors (HDCS)of this chapter is to calculate critical values of the compensation at which this transition occurs, as well as the activation energy .. in the nonmetallic phase. The results strongly depend on whether the impurity distribution in the semiconductor is correlated or it is of a purely Poisson form.作者: glowing 時(shí)間: 2025-3-23 08:52 作者: 強(qiáng)行引入 時(shí)間: 2025-3-23 11:55
https://doi.org/10.1007/978-3-322-84278-7ental questions in the theory of doped semiconductors: how do impurity states belonging to different centers influence one another, and what is the resultant energy spectrum for a crystal containing a finite concentration of impurities?作者: IVORY 時(shí)間: 2025-3-23 14:05
https://doi.org/10.1007/978-3-211-89189-6 in general. A detailed investigation of the impurity band has been carried out recently by computer (Chap. 14). In the present chapter we formulate the problem (Sect. 3.4), and discuss its solutions in the limiting cases of low compensation (Sects. 3.2 and 3.3) and high compensation (Sect. 3.4).作者: Culmination 時(shí)間: 2025-3-23 19:56
Testarchitekturen für VLSI-Bausteineon 4.1 describes the range of temperatures and degrees of compensation for which electrical conduction in semiconductors occurs by the hopping mechanism. It also shows the typical dependences of hopping conductivity on the temperature and impurity concentration. Section 4.2 shows how, following Mill作者: helper-T-cells 時(shí)間: 2025-3-23 23:02 作者: 量被毀壞 時(shí)間: 2025-3-24 05:45
https://doi.org/10.1007/978-3-322-93932-6aw dependence on the magnetic field. The theory of this phenomenon is well developed. The effect of the magnetic field is taken into account with the help of a kinetic equation or an equation for the density matrix.作者: micronized 時(shí)間: 2025-3-24 07:22
Informatikforschung in Deutschland those connecting some remote impurities whose energy levels happen to be very close to the Fermi level. In this case the characteristic hopping length increases with lowering temperature (hence the name variable-range hopping, or VRH), and for a constant density of states one obtains the celebrated作者: 設(shè)想 時(shí)間: 2025-3-24 11:22 作者: 辭職 時(shí)間: 2025-3-24 14:55
https://doi.org/10.1007/978-1-4842-9742-1e the density of states is very low. We also discuss a simple modification of this method which allows to estimate the exponent using only the Poisson distribution and elementary quantum mechanics. A classification is proposed for the types of density of states which occur in doped semiconductors. T作者: 不適 時(shí)間: 2025-3-24 21:58
Information Cultures in the Digital Ageof this chapter is to calculate critical values of the compensation at which this transition occurs, as well as the activation energy .. in the nonmetallic phase. The results strongly depend on whether the impurity distribution in the semiconductor is correlated or it is of a purely Poisson form.作者: Collision 時(shí)間: 2025-3-25 03:12
https://doi.org/10.1007/978-3-642-25841-1in the limiting cases of high and low compensations, where the small parameters of the problem are the quantities (1 ? .) and .. In the case of intermediate compensation such methods fail, and in order to describe the density of states over the whole energy interval one has to use computer simulatio作者: Prologue 時(shí)間: 2025-3-25 06:41
https://doi.org/10.1007/978-3-662-02403-4Properties; Semiconductors; Absorption; crystal; electronic properties; electronics; semiconductor; semicon作者: Guaff豪情痛飲 時(shí)間: 2025-3-25 07:37 作者: Cultivate 時(shí)間: 2025-3-25 12:54 作者: antiandrogen 時(shí)間: 2025-3-25 16:05
Glover T. Ferguson,Thomas H. PikeIn this chapter we use the quasiclassical method to study electronic states in a heavily doped semiconductor. The advantage of this method lies in its simplicity and physical transparency. With its help we can obtain a description of the density of states “tails” in the forbidden gap.作者: assent 時(shí)間: 2025-3-25 21:42 作者: 閃光東本 時(shí)間: 2025-3-26 03:49
Percolation TheoryThe term “percolation” was introduced in 1957 by . and .[5.1] in connection with their new class of mathematical problems. These problems concerned the flow of a liquid through a random maze, and thus the name “percolation theory.”作者: 設(shè)施 時(shí)間: 2025-3-26 06:15
Electronic States in Heavily Doped SemiconductorsIn this chapter we use the quasiclassical method to study electronic states in a heavily doped semiconductor. The advantage of this method lies in its simplicity and physical transparency. With its help we can obtain a description of the density of states “tails” in the forbidden gap.作者: entrance 時(shí)間: 2025-3-26 11:11
978-3-662-02405-8Springer-Verlag Berlin Heidelberg 1984作者: 信徒 時(shí)間: 2025-3-26 14:38 作者: LASH 時(shí)間: 2025-3-26 17:09 作者: Entropion 時(shí)間: 2025-3-26 21:34 作者: 動(dòng)脈 時(shí)間: 2025-3-27 02:53
https://doi.org/10.1007/978-3-211-89189-6 in general. A detailed investigation of the impurity band has been carried out recently by computer (Chap. 14). In the present chapter we formulate the problem (Sect. 3.4), and discuss its solutions in the limiting cases of low compensation (Sects. 3.2 and 3.3) and high compensation (Sect. 3.4).作者: nauseate 時(shí)間: 2025-3-27 05:54
https://doi.org/10.1007/978-3-322-93932-6aw dependence on the magnetic field. The theory of this phenomenon is well developed. The effect of the magnetic field is taken into account with the help of a kinetic equation or an equation for the density matrix.作者: 繁忙 時(shí)間: 2025-3-27 10:06
Information Cultures in the Digital Ageof this chapter is to calculate critical values of the compensation at which this transition occurs, as well as the activation energy .. in the nonmetallic phase. The results strongly depend on whether the impurity distribution in the semiconductor is correlated or it is of a purely Poisson form.作者: Filibuster 時(shí)間: 2025-3-27 16:47 作者: Granular 時(shí)間: 2025-3-27 18:19 作者: 領(lǐng)袖氣質(zhì) 時(shí)間: 2025-3-28 00:31
Hopping Conduction in a Magnetic Fieldaw dependence on the magnetic field. The theory of this phenomenon is well developed. The effect of the magnetic field is taken into account with the help of a kinetic equation or an equation for the density matrix.作者: 有效 時(shí)間: 2025-3-28 02:18
The Theory of Heavily Doped and Highly Compensated Semiconductors (HDCS)of this chapter is to calculate critical values of the compensation at which this transition occurs, as well as the activation energy .. in the nonmetallic phase. The results strongly depend on whether the impurity distribution in the semiconductor is correlated or it is of a purely Poisson form.作者: laceration 時(shí)間: 2025-3-28 07:01 作者: Promotion 時(shí)間: 2025-3-28 13:11 作者: 案發(fā)地點(diǎn) 時(shí)間: 2025-3-28 15:57 作者: sinoatrial-node 時(shí)間: 2025-3-28 22:13 作者: indemnify 時(shí)間: 2025-3-29 02:55 作者: MANIA 時(shí)間: 2025-3-29 03:34
Testarchitekturen für VLSI-Bausteineer and Abrahams, one can reduce the problem of calculating the hopping conductivity to that of calculating the conductivity of a random network of resistors connecting donor pairs. Naive approaches to that problem based on averaging either resistances or conductances are critically considered.作者: myalgia 時(shí)間: 2025-3-29 08:49 作者: GUISE 時(shí)間: 2025-3-29 11:54
Dependence of Hopping Conduction on the Impurity Concentration and Strain in the Crystal The anisotropy of hopping conductivity is calculated for the case of large strain in .and .-Ge, where the wave functions of impurities are associated with a single ellipsoid in the electron spectrum.作者: obtuse 時(shí)間: 2025-3-29 16:25
Book 1984hysical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish- ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of 作者: 有權(quán)威 時(shí)間: 2025-3-29 23:30 作者: Schlemms-Canal 時(shí)間: 2025-3-30 00:33 作者: 不整齊 時(shí)間: 2025-3-30 07:06 作者: 惰性女人 時(shí)間: 2025-3-30 08:44 作者: 寄生蟲 時(shí)間: 2025-3-30 13:58
https://doi.org/10.1007/978-3-658-06022-0pping region. The existence of correlation implies that the random resistor network model, which underlies the theory of hopping conduction desribed in the preceding chapters, becomes strictly speaking inadequate. The model remains useful for physical problems, but its use requires special justification.作者: 進(jìn)入 時(shí)間: 2025-3-30 17:49
