標(biāo)題: Titlebook: Electroluminescence; Proceedings of the F Shigeo Shionoya,Hiroshi Kobayashi Conference proceedings 19891st edition Springer-Verlag Berlin H [打印本頁] 作者: 引起極大興趣 時(shí)間: 2025-3-21 19:40
書目名稱Electroluminescence影響因子(影響力)
書目名稱Electroluminescence影響因子(影響力)學(xué)科排名
書目名稱Electroluminescence網(wǎng)絡(luò)公開度
書目名稱Electroluminescence網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Electroluminescence被引頻次
書目名稱Electroluminescence被引頻次學(xué)科排名
書目名稱Electroluminescence年度引用
書目名稱Electroluminescence年度引用學(xué)科排名
書目名稱Electroluminescence讀者反饋
書目名稱Electroluminescence讀者反饋學(xué)科排名
作者: 最高點(diǎn) 時(shí)間: 2025-3-21 23:14
Excitation Mechanism in White-Light Emitting SrS:Pr, K and SrS:Ce, K, Eu Thin-Film Electroluminescen are superior from an ergonomics point of view, because characters and/or figures are drawn in black on a white screen in this mode, just as in printed matter. In addition, full-color displays can be realized by combining a white thin-film EL with color filters.作者: 贊美者 時(shí)間: 2025-3-22 02:29 作者: Arb853 時(shí)間: 2025-3-22 07:22 作者: labyrinth 時(shí)間: 2025-3-22 12:09
Developments in the Theory of Electroluminescence Mechanismsich advances are being made are surveyed. They are the hot electron distribution, impact and ionization cross-sections, Auger effects, the position of rare-earth energy levels relative to the energy gap, and the r?le of hot holes.作者: 改良 時(shí)間: 2025-3-22 15:18
0930-8989 rkshop was sponsored by the 125 Research Committee on Mutual Conversion between Light and Electricity, Japan Society for the Promotion of Science, in cooperation with SID (Society for Infonnation Display) Japan Chapter, Tottori Prefecture, the Tot- tori Industrial Technology Association, and the Fou作者: 改良 時(shí)間: 2025-3-22 17:07 作者: certitude 時(shí)間: 2025-3-22 21:19
https://doi.org/10.1007/978-3-662-43891-6 been presented.. There are only a few reports on studies of the relation between broad-band emission intrinsic to ZnS host and emission of doped ion.. This paper reports the experimental results of transient behavior between broadband and Tb. emission in ZnS thin-film EL devices excited by an alternating pulse voltage of very narrow width.作者: infringe 時(shí)間: 2025-3-23 04:27 作者: fulcrum 時(shí)間: 2025-3-23 07:50
https://doi.org/10.1007/978-3-8349-4543-3ilm. Especially, it is clarified by electron spin resonance analysis that annealing increased isolated Mn. ions, which contributed electroluminescense. Longer, and high-temperature annealing results in increase of isolated Mn. ions. Effects of annealing on the composition of ZnS:Mn thin film is also discussed.作者: Tonometry 時(shí)間: 2025-3-23 10:06 作者: Minikin 時(shí)間: 2025-3-23 17:27
Time Resolved Emission Spectra in ZnS Thin Film Electroluminescent Devices been presented.. There are only a few reports on studies of the relation between broad-band emission intrinsic to ZnS host and emission of doped ion.. This paper reports the experimental results of transient behavior between broadband and Tb. emission in ZnS thin-film EL devices excited by an alternating pulse voltage of very narrow width.作者: aphasia 時(shí)間: 2025-3-23 21:12 作者: WAIL 時(shí)間: 2025-3-24 01:44 作者: 無能力之人 時(shí)間: 2025-3-24 04:20 作者: LATER 時(shí)間: 2025-3-24 08:25 作者: 宿醉 時(shí)間: 2025-3-24 13:08 作者: finite 時(shí)間: 2025-3-24 18:39
Stoicism and Modern Virtue Ethics,e excitation process. It reflects the excitation probability of the luminescent center, and has been investigated both theoretically and experimentally /1, 2, 3, 4/. Most of the results are rather rough and the variation of impact cross section with hot electron energy is not clear. In this paper, b作者: 先驅(qū) 時(shí)間: 2025-3-24 19:31 作者: rheumatism 時(shí)間: 2025-3-25 01:44
0930-8989 3; 49 from abroad (10 countries) and 204 from Japan. This is almost four times as many as in the previous workshop in 1986, reflecting the recent rapid development and progress of electroluminescence research.978-3-642-93432-2978-3-642-93430-8Series ISSN 0930-8989 Series E-ISSN 1867-4941 作者: 籠子 時(shí)間: 2025-3-25 07:21 作者: Corroborate 時(shí)間: 2025-3-25 10:34
Secondary Light Output from ZnS:Mn Thin Film Electroluminescent DevicesnS:Mn EL powders, in contrast to ZnS phosphors with other activators [3], is ascribed to the specific nature of the Mn activator that allows only localized transitions within the luminescence center [3]. However, the specific light generation mechanism in ZnS:Mn does not rule out the appearance of s作者: Facilities 時(shí)間: 2025-3-25 12:11 作者: FLINT 時(shí)間: 2025-3-25 17:36
Konrad Ott,Jan Dierks,Lieske Voget-Kleschiniconductors and silicon have remained unexplored, despite their obvious potential for light emitting and laser diodes. The characteristic photoluminescence and electroluminescence spectra of rare earth ions in III–V and silicon semiconductors were reported recently [1–4].作者: 現(xiàn)暈光 時(shí)間: 2025-3-25 23:43 作者: Forage飼料 時(shí)間: 2025-3-26 04:09
Novel Step Impact Electroluminescent Devicesiconductors and silicon have remained unexplored, despite their obvious potential for light emitting and laser diodes. The characteristic photoluminescence and electroluminescence spectra of rare earth ions in III–V and silicon semiconductors were reported recently [1–4].作者: 淺灘 時(shí)間: 2025-3-26 05:47 作者: capsaicin 時(shí)間: 2025-3-26 10:30 作者: Arthr- 時(shí)間: 2025-3-26 14:55
the Auger effect. This review summarizes a current status of the experiment and theory of the Auger effect and its relationship to the quantum efficiency of high-field electroluminescence. Mechanisms (electric-dipole versus exchange) governing the Auger-type energy transfer processes are discussed. 作者: Forage飼料 時(shí)間: 2025-3-26 18:33 作者: 諄諄教誨 時(shí)間: 2025-3-26 21:11 作者: 生來 時(shí)間: 2025-3-27 03:21
https://doi.org/10.1007/978-3-540-48924-5tion, because they are promising candidates for full-color TFEL display panels [1–3], Very recently, several experimental investigation on EL excitation mechanism of these TFEL devices have been reported [4–7], From experimental data, it is argued that the EL excitation mechanism of Eu or Ce doped C作者: 慢慢流出 時(shí)間: 2025-3-27 07:55
Eckhart Doege,Bernd-Arno Behrensi- and full-color thin film EL displays. Very recently, we have developed two types of bright white-light emitting thin film EL devices with new phosphors, SrS:Pr,K and SrS:Ce,K,Eu [1–3], White-light EL devices have the following important characteristics; White-light EL displays with a reverse mode作者: Hdl348 時(shí)間: 2025-3-27 10:52 作者: Ophthalmologist 時(shí)間: 2025-3-27 15:58
Arthur P.J. Mol,Gert Spaargarenat excite luminescent centers are injected into the ZnS emitting layer from Si as a result of the band bending in Si at the interface between SiO. and p-Si. When the device was prepared on a p-layer formed by ion implantation of a n-type Si wafer, the driving voltage for electroluminescence became l作者: slipped-disk 時(shí)間: 2025-3-27 18:15
Mariana Madruga de Brito,Jan Sodogedependences of the EL light output (emission waveforms). Under steady-state ac drive, differences in phosphor materials are exhibited not only by different emission decay times, but also by the number of emission peaks per period. Specifically under bipolar square pulse drive, ZnS:Mn devices normall作者: Prologue 時(shí)間: 2025-3-27 22:55
Handbuch Unternehmenskommunikationctive layer as well as in the active layer-insulating layer interfaces [1]. Carriers trapped in these levels generate polarized charges and the memory function of a ZnS:Mn EL display is considered to be caused by these polarized charges [2]. Therefore, identification of these trap levels is necessar作者: 固定某物 時(shí)間: 2025-3-28 03:35
https://doi.org/10.1007/978-3-8349-4543-3aracteristics. The deviation of composition and a quantity of isolated Mn. ions before and after the annealing have been investigated in ZnS:Mn thin film. Especially, it is clarified by electron spin resonance analysis that annealing increased isolated Mn. ions, which contributed electroluminescense作者: 可憎 時(shí)間: 2025-3-28 08:17
https://doi.org/10.1007/978-3-642-93430-8crystal; development; diodes; electroluminescence; electron; exciton; material; semiconductor; thin films作者: narcissism 時(shí)間: 2025-3-28 14:22
978-3-642-93432-2Springer-Verlag Berlin Heidelberg 1989作者: TSH582 時(shí)間: 2025-3-28 17:52 作者: floodgate 時(shí)間: 2025-3-28 19:58
Silke Bi?mann Dipl. Geol.,René Kahnt Dr.Electroluminescence (EL) discovered in 1936 [1] was recognized as a new physical phenomenon. However, EL remained unexplored as far as the device was concerned, due to the immature development of both peripheral materials and technologies.作者: 開玩笑 時(shí)間: 2025-3-28 22:54
Virtuous and Right Action: A Relaxed ViewZnS thin films doped with Mn. ions or rare-earth ions are promising material for electroluminescent planar panels, which might be strong candidates for the next generation solid planar display devices to partly replace cathode-ray tube displays. They are attracting an increasing amount of research.作者: 懲罰 時(shí)間: 2025-3-29 04:31
Das amerikanische Steuersystem,A.C. thin films electroluminescent (E.L.) devices with ZnS host matrix and Inoguchi structure (MISIM) [1] have a simpler and more definite structure than Destriau ones. These devices work under high a.c. electric field. Müller [2] has listed and discussed the various processes which occur when the device is operating.作者: 鴕鳥 時(shí)間: 2025-3-29 07:13
Handbuch UnternehmenskommunikationNew signals from thermally stimulated currents were observed on thin film electroluminescent devices. The signals originate from polarization charge at the interface between a ZnS layer and an insulating layer. The interface trap depths ranged from 1.8 to 1.9 eV, which is about half the ZnS energy gap.作者: etiquette 時(shí)間: 2025-3-29 11:35
Stefan Stieglitz,Christian WiencierzSeveral papers dealing with the mechanism of ZnS:Mn. emission in TFEL devices have been reported and two principal phenomena which govern the decay of the yellow Mn. emission have been registered [ 1,2,3 ] :作者: JAMB 時(shí)間: 2025-3-29 15:55
Retrospect and Prospect on Research and Development of Electroluminescent PanelsElectroluminescence (EL) discovered in 1936 [1] was recognized as a new physical phenomenon. However, EL remained unexplored as far as the device was concerned, due to the immature development of both peripheral materials and technologies.作者: 漂白 時(shí)間: 2025-3-29 21:50
The Impact Cross Section of Electroluminescence CentersZnS thin films doped with Mn. ions or rare-earth ions are promising material for electroluminescent planar panels, which might be strong candidates for the next generation solid planar display devices to partly replace cathode-ray tube displays. They are attracting an increasing amount of research.作者: Abbreviate 時(shí)間: 2025-3-30 00:18 作者: Cursory 時(shí)間: 2025-3-30 05:55 作者: Conflagration 時(shí)間: 2025-3-30 08:18
Influence of the Mn Concentration and the Level of Excitation on Efficiency of ZnS:Mn DevicesSeveral papers dealing with the mechanism of ZnS:Mn. emission in TFEL devices have been reported and two principal phenomena which govern the decay of the yellow Mn. emission have been registered [ 1,2,3 ] :作者: 裹住 時(shí)間: 2025-3-30 13:38 作者: ANNUL 時(shí)間: 2025-3-30 18:48
Auger Effect in Semiconductors: Why Does It Matter for Electroluminescence?the Auger effect. This review summarizes a current status of the experiment and theory of the Auger effect and its relationship to the quantum efficiency of high-field electroluminescence. Mechanisms (electric-dipole versus exchange) governing the Auger-type energy transfer processes are discussed. 作者: macrophage 時(shí)間: 2025-3-30 23:05 作者: 槍支 時(shí)間: 2025-3-31 01:50
Time Resolved Emission Spectra in ZnS Thin Film Electroluminescent Devicescessfully interpreted on the basis of a direct impact excitation model. However, a resonant energy transfer model as a dominant excitation process has been presented.. There are only a few reports on studies of the relation between broad-band emission intrinsic to ZnS host and emission of doped ion.作者: 粘連 時(shí)間: 2025-3-31 06:51
Excitation Mechanism Based on Field-Induced Delocalization of Luminescent Centers in CaS:Eu2+ and Srtion, because they are promising candidates for full-color TFEL display panels [1–3], Very recently, several experimental investigation on EL excitation mechanism of these TFEL devices have been reported [4–7], From experimental data, it is argued that the EL excitation mechanism of Eu or Ce doped C
