標題: Titlebook: Electrical Atomic Force Microscopy for Nanoelectronics; Umberto Celano Book 2019 Springer Nature Switzerland AG 2019 Atomic Force Microsco [打印本頁] 作者: 二足動物 時間: 2025-3-21 16:22
書目名稱Electrical Atomic Force Microscopy for Nanoelectronics影響因子(影響力)
書目名稱Electrical Atomic Force Microscopy for Nanoelectronics影響因子(影響力)學科排名
書目名稱Electrical Atomic Force Microscopy for Nanoelectronics網(wǎng)絡公開度
書目名稱Electrical Atomic Force Microscopy for Nanoelectronics網(wǎng)絡公開度學科排名
書目名稱Electrical Atomic Force Microscopy for Nanoelectronics被引頻次
書目名稱Electrical Atomic Force Microscopy for Nanoelectronics被引頻次學科排名
書目名稱Electrical Atomic Force Microscopy for Nanoelectronics年度引用
書目名稱Electrical Atomic Force Microscopy for Nanoelectronics年度引用學科排名
書目名稱Electrical Atomic Force Microscopy for Nanoelectronics讀者反饋
書目名稱Electrical Atomic Force Microscopy for Nanoelectronics讀者反饋學科排名
作者: 震驚 時間: 2025-3-21 21:45 作者: Discrete 時間: 2025-3-22 02:22
Eckart Richter,Thomas Feyerabendines and practical hands-on explanation for maximizing the image quality and data acquisition. Finally, a set of different application based in the use of piezo and ferroelectric materials is depicted, in which the AFM characterization took an important role as the primary characterization technique作者: AWL 時間: 2025-3-22 07:55 作者: somnambulism 時間: 2025-3-22 11:47
Mapping Conductance and Carrier Distributions in Confined Three-Dimensional Transistor Structures, the recent years. These methods aid in extending conventional SSRM toward quantitative carrier profiling in aggressively scaled 3D device structures which is illustrated on the example of selected relevant applications such as FinFETs and nanowire-based transistors.作者: 我正派 時間: 2025-3-22 13:41
Characterizing Ferroelectricity with an Atomic Force Microscopy: An All-Around Technique,ines and practical hands-on explanation for maximizing the image quality and data acquisition. Finally, a set of different application based in the use of piezo and ferroelectric materials is depicted, in which the AFM characterization took an important role as the primary characterization technique作者: 我正派 時間: 2025-3-22 17:03 作者: paltry 時間: 2025-3-22 23:14 作者: 舔食 時間: 2025-3-23 04:34
Electrical Atomic Force Microscopy for Nanoelectronics作者: CLAY 時間: 2025-3-23 08:37
Umberto CelanoComprehensive treatment of emerging devices, their operation and characterization.Authors provide a balance of industry and academic expertise.Includes images of state-of-the-art integrated devices.Co作者: 混合,攙雜 時間: 2025-3-23 09:58
NanoScience and Technologyhttp://image.papertrans.cn/e/image/305698.jpg作者: Cholesterol 時間: 2025-3-23 15:09 作者: 群居動物 時間: 2025-3-23 18:17 作者: savage 時間: 2025-3-24 01:46 作者: 大范圍流行 時間: 2025-3-24 02:34 作者: Vertebra 時間: 2025-3-24 07:36
https://doi.org/10.1007/978-3-030-15612-1Atomic Force Microscope; Nanoscale materials analysis; VLSI metrology; Nanoelectronic materials; Nanoele作者: GLIB 時間: 2025-3-24 11:39
Grundlagen der Steuerungstechnikon sub-μm metal oxide field-effect transistors (MOSFET) was beginning. Apparently uncorrelated, these events have positively influenced one another. In fact, ultra-scaled semiconductor devices required nanometer control of the surface quality, and the newborn microscopy techniques provided unprecede作者: Chemotherapy 時間: 2025-3-24 15:06 作者: 前奏曲 時間: 2025-3-24 20:09 作者: 不幸的人 時間: 2025-3-25 01:11 作者: exceptional 時間: 2025-3-25 07:00
Eckart Richter,Thomas Feyerabend’s modifications. In particular, for piezo and ferroelectricity properties, the AFM overcame the limitations of macroscopic techniques. This chapter covers all the aspects of piezo and ferroelectricity measurements performed with an AFM. The chapter is divided in three main parts, one for each avail作者: LINE 時間: 2025-3-25 10:15 作者: 細查 時間: 2025-3-25 13:36
https://doi.org/10.1007/978-3-8348-9348-2 surface of magnetic materials and devices, magnetic force microscopy. The behaviour of such magnetic samples is well-known to be controlled by the formation and reversal of magnetic domains, each of which has a uniform magnetic moment separated by a region with moment rotation, a magnetic domain wa作者: AV-node 時間: 2025-3-25 18:38 作者: concentrate 時間: 2025-3-25 21:53
https://doi.org/10.1007/978-3-8351-9128-0or next generation electronic applications. Despite recent progresses in large area synthesis of 2DMs, their electronic properties are still affected by nano- or micro-scale defects/inhomogeneities related to the specific growth process. Electrical scanning probe methods, such as conductive atomic f作者: fleeting 時間: 2025-3-26 02:49 作者: 膠水 時間: 2025-3-26 07:22 作者: 牽連 時間: 2025-3-26 10:26
The Atomic Force Microscopy for Nanoelectronics,on sub-μm metal oxide field-effect transistors (MOSFET) was beginning. Apparently uncorrelated, these events have positively influenced one another. In fact, ultra-scaled semiconductor devices required nanometer control of the surface quality, and the newborn microscopy techniques provided unprecede作者: Evolve 時間: 2025-3-26 13:07
Mapping Conductance and Carrier Distributions in Confined Three-Dimensional Transistor Structures, processes and how they affect the incorporation, diffusion and activation of dopants and hence the final device performance. Scanning spreading resistance microscopy (SSRM) has emerged as the most valuable technique for 2D and 3D carrier mapping in semiconductor device structures due to its excelle作者: nugatory 時間: 2025-3-26 18:58
Scanning Capacitance Microscopy for Two-Dimensional Carrier Profiling of Semiconductor Devices,fects and yield detractors. This results in engineers utilizing the Failure Mode and Effects Analysis (FMEA) duplicate of integrated circuits. In failure analysis (FA) of integrated circuits, Scanning Capacitance Microscopy (SCM) has been used to identify failure mechanisms, such as regions of incor作者: GRACE 時間: 2025-3-27 00:00
Oxidation and Thermal Scanning Probe Lithography for High-Resolution Nanopatterning and Nanodevicesuctive inspection of the fabricated structures, the nanometric accuracy in positioning, the versatility in modifying any kind of materials, and the freedom in the patterning geometries. On the other hand, the tip size and lifetime-related issues hinder the achievable throughput, and a precise niche 作者: 肉身 時間: 2025-3-27 02:41
Characterizing Ferroelectricity with an Atomic Force Microscopy: An All-Around Technique,’s modifications. In particular, for piezo and ferroelectricity properties, the AFM overcame the limitations of macroscopic techniques. This chapter covers all the aspects of piezo and ferroelectricity measurements performed with an AFM. The chapter is divided in three main parts, one for each avail作者: 單純 時間: 2025-3-27 08:48 作者: 實現(xiàn) 時間: 2025-3-27 13:06 作者: 形容詞 時間: 2025-3-27 15:19 作者: ANTH 時間: 2025-3-27 21:20 作者: 痛恨 時間: 2025-3-28 01:06
Diamond Probes Technology,e for use as a tip material in scanning probe microscopy (SPM). The commercial availability of micromachined Si probes at the beginning of the 1990s triggered soon the interest and need for different tip coatings such as diamond which was first wanted for increasing the tip lifetime. Although first 作者: BILK 時間: 2025-3-28 05:43 作者: Injunction 時間: 2025-3-28 06:59
Grundlagen der Steuerungstechnikhile driving the analysis and sensing capabilities in novel directions. Here, the goal is to introduce the major electrical AFM methods, going through the journey that has seen our life changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.作者: 斗爭 時間: 2025-3-28 10:41 作者: Pelago 時間: 2025-3-28 17:07 作者: Pert敏捷 時間: 2025-3-28 22:33
Wechselwirkungen von Neutronenstrahlung,and scientific applications to improve fundamental and functional understanding and operational performance of advanced, exploratory and quantum electronic devices and materials and their fabrication.作者: Bureaucracy 時間: 2025-3-29 01:39
The Atomic Force Microscopy for Nanoelectronics,hile driving the analysis and sensing capabilities in novel directions. Here, the goal is to introduce the major electrical AFM methods, going through the journey that has seen our life changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.作者: exacerbate 時間: 2025-3-29 06:29 作者: 身心疲憊 時間: 2025-3-29 09:25 作者: Offstage 時間: 2025-3-29 12:32 作者: 殺死 時間: 2025-3-29 17:23
1434-4904 se.Includes images of state-of-the-art integrated devices.Co.The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer 作者: 克制 時間: 2025-3-29 21:22 作者: Consequence 時間: 2025-3-30 01:59 作者: 飾帶 時間: 2025-3-30 06:56
Allgemeine onkologische Therapie,ositioning patterning by SPL and the high throughput and low-resolution patterning by other well-established lithographies (optical, electron beam, nanoimprint) can be achieved by the development of mix-and-match lithography strategies.作者: 捏造 時間: 2025-3-30 10:37
Wechselwirkungen von Neutronenstrahlung,FM schemes used to study RS, followed by an overview of recent research on RS performed by means of AFM. A particular emphasis is given to innovative AFM techniques and AFM-based studies of significant scientific contribution to the field of RS in the last few?decades.
